JP2007059438A - Substrate-treating device and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform etching treatment to a rectangular substrate surface efficiently and uniformly. <P>SOLUTION: The substrate-treating device 1 comprises a treatment liquid supply section 2; a substrate conveyance mechanism 3 for conveying the substrate 9 in a prescribed conveyance direction; a plurality of nozzles 4 for jetting treatment liquid droplets that are etching liquids; a gas supply section 5 for supplying gas to each nozzle 4; and a control circuit 6. Each nozzle 4 generates the treatment liquid droplets inside and jets the treatment liquid droplets from a slit-like jet 40 extended vertically in a conveyance direction toward the substrate 9 along with gas. In the substrate-treating device 1, the substrate 9 is rocked at least once in a conveyance direction and its opposite direction within the jet range of the treatment liquid while the treatment liquid droplets are jetted toward a conveyance path from the plurality of nozzles 4, thus preventing treatment irregularities from being generated in the entire treatment region on the substrate 9 and performing the etching treatment to the substrate surface efficiently and uniformly. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a technique for processing a substrate by supplying a processing liquid to the substrate.

  Conventionally, in an apparatus that performs etching on a rectangular substrate, a processing liquid is supplied to the substrate while swinging a plurality of nozzles on the transport path, or the substrate is placed upstream of the transport path in addition to the nozzle swing. The substrate surface is processed while moving so as to swing to the side and the downstream side.

  For example, in Patent Document 1, a plurality of shower pipes having a large number of nozzles are arranged in a direction perpendicular to the transport direction while being oriented in a direction parallel to the transport direction of the substrate, and the shower pipe is centered on a central axis in the longitudinal direction. As described above, there is disclosed a substrate processing apparatus that supplies a processing liquid from a nozzle to a substrate while rotating to achieve uniform processing liquid supply to the substrate surface. In Patent Document 2, by swinging a large number of spray nozzles for injecting an etching liquid in a conical shape in a horizontal posture in a horizontal posture in a direction perpendicular to the traveling direction of the substrate, A substrate processing apparatus that eliminates uneven processing rates in the width direction of a substrate is disclosed.

  Further, in Patent Document 3, in a substrate processing apparatus that supplies a processing liquid from a nozzle that extends in a direction perpendicular to the substrate transport direction, the substrate is swung based on the number of times the substrate is swung by the transport, the substrate swing distance, and the swing time. A technique is disclosed in which the substrate transport speed at the time is calculated and transported while the substrate is swung based on the determined transport speed.

On the other hand, in an apparatus for processing a semiconductor substrate, a technique is used in which chemical cleaning and physical cleaning are simultaneously performed by jetting a chemical solution together with gas from a two-fluid nozzle to perform etching, thereby improving etching processing efficiency. . For example, in Patent Document 4, it is preferable to obtain a high etching factor by using a radiation nozzle having a flat mouth for intermittently injecting an etching solution with a high-pressure gas and a recovery nozzle for recovering the injected etching solution. A technique for forming a liquid flow state is disclosed.
JP-A-10-79368 International Publication No. 2002/049087 Pamphlet JP 2001-176948 A JP-A-4-132246

  By the way, in the substrate processing apparatus described in Patent Documents 1 and 2, since the nozzle for ejecting the processing liquid in a conical shape is used, a spray pattern is generated individually, and the region where the processing liquid is supplied on the substrate is generated at the overlapping portion. In order to prevent uneven processing, the nozzle must be swung in addition to the substrate. In particular, the substrate processing apparatus described in Patent Document 2 is further provided with a slit nozzle that supplies the processing liquid in a film shape over the entire width direction of the substrate surface in order to prevent processing unevenness more effectively. As a result, the entire apparatus is enlarged. Further, in the substrate processing apparatus described in Patent Document 3, it is difficult to completely eliminate the generation of a spray pattern simply by arranging normal nozzle openings in a direction perpendicular to the transport direction.

  The present invention has been made in view of the above problems, and an object of the present invention is to efficiently perform processing on a processing region on a substrate while preventing processing unevenness.

  The invention according to claim 1 is a substrate processing apparatus for processing the substrate by supplying an etching solution to the substrate, and a substrate transport mechanism for transporting the substrate in a predetermined transport direction, each parallel to the substrate. And at least one nozzle that ejects a droplet of an etching solution from a slit-like jet port extending in a direction perpendicular to the transport direction together with a gas toward the transport path of the substrate. The length in the direction perpendicular to the transport direction is equal to or greater than the width of the processing region on the substrate in the direction perpendicular to the transport direction, and the droplet of the etchant is ejected from the at least one nozzle. The substrate transport mechanism swings the substrate at least once in the transport direction and in the opposite direction in the transport path.

  The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the at least one nozzle is a plurality of nozzles, and the plurality of nozzles are arranged at a constant nozzle pitch in the transport direction. Has been.

  According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, wherein the etching liquid collides with a high-speed gas in each of the at least one nozzles, so Droplets are generated.

  According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to any one of the first to third aspects, wherein when the substrate transport mechanism swings, the entire processing region on the substrate is the etching solution. Passes through the region on the transport path where the air is ejected in the transport direction and in the opposite direction.

  The invention according to claim 5 is a substrate processing method for processing the substrate by supplying an etching solution to the substrate, and a substrate transporting process for transporting the substrate in a predetermined transport direction, and each of them is parallel to the substrate. And a processing liquid jetting step for jetting a droplet of an etching liquid together with a gas toward a transport path of the substrate from at least one nozzle having a slit-like jet outlet extending in a direction perpendicular to the transport direction. And the length of the jet port in the direction perpendicular to the transport direction is equal to or greater than the width of the processing region on the substrate in the direction perpendicular to the transport direction, and the droplet of the etchant from the at least one nozzle Is ejected at least once in the transport direction in the transport direction and in the opposite direction in the transport path.

  In the present invention, the treatment liquid droplets are ejected together with the gas from the slit-like ejection port extending in the direction perpendicular to the nozzle conveyance direction, thereby enabling uniform and efficient treatment at a high etching rate. Furthermore, it is possible to prevent processing unevenness from occurring in a direction perpendicular to the transport direction on the substrate. As a result, throughput can be improved while maintaining high processing quality.

  According to the second aspect of the present invention, it is possible to prevent the occurrence of processing unevenness in the entire processing region of the substrate while processing using a plurality of nozzles. In the third aspect of the invention, the processing liquid collides with a high-speed gas. Fine droplets can be ejected at high speed, and the processing efficiency can be improved. In the invention of claim 4, the number of nozzles can be reduced, and the manufacturing cost of the apparatus can be reduced.

  FIG. 1 is a front view showing a substrate processing apparatus 1 according to a first embodiment of the present invention, and FIG. 2 is a plan view showing a part of the substrate processing apparatus 1. In FIG. 1, a part of the configuration of the apparatus is shown in cross section. In the substrate processing apparatus 1, the substrate 9 is processed by supplying an etching solution, which is a processing solution, to a rectangular glass substrate for liquid crystal (hereinafter simply referred to as “substrate 9”).

  As shown in FIG. 1, the substrate processing apparatus 1 horizontally transfers a processing chamber 11 in which a substrate 9 is processed, a processing liquid supply unit 2, and a substrate 9 in a predetermined transport direction (Y direction in FIG. 1). The apparatus includes a substrate transport mechanism 3, a plurality of nozzles 4 that eject droplets of processing liquid supplied from the processing liquid supply unit 2, a gas supply unit 5 that supplies gas to each nozzle 4, and a control circuit 6. The plurality of nozzles 4 ejects droplets of the processing liquid together with the gas toward the transport path of the substrate 9 by being supplied with the processing liquid and the gas.

  The processing liquid supply unit 2 includes a storage tank 20 that stores the processing liquid, a pump 21 that sends out the processing liquid, a valve 22 that opens and closes the flow path of the processing liquid, and a filter 23 that removes particles and the like in the processing liquid. The flow path from the filter 23 is connected to each nozzle 4, and when the processing liquid stored in the storage tank 20 is sent out from the storage tank 20 by the pump 21, it is supplied to each nozzle 4 through the valve 22 and the filter 23. .

  The processing chamber 11 has a carry-in port 12 and a carry-out port 13, and a recovery port 14 for collecting the processing liquid ejected from the plurality of nozzles 4 toward the substrate 9 is provided at the bottom of the processing chamber 11. . The processing liquid recovered from the recovery port 14 is returned to the storage tank 20 and reused. Further, a first sensor 15 and a second sensor 16 for detecting the position of the substrate 9 are arranged in the processing chamber 11 in the vicinity of the carry-in port 12 and the carry-out port 13 in the transfer route of the substrate 9, respectively. The sensor is connected to the control circuit 6.

  The substrate transport mechanism 3 includes a plurality of rollers 31 arranged in the transport direction of the substrate 9 and a motor 32 that can be rotated forward and backward connected to a transmission device (not shown) attached to the plurality of rollers 31. The motor 32 is electrically connected to the control circuit 6, and the motor 32 is driven by a command from the control circuit 6, and the plurality of rollers 31 simultaneously rotate in the forward or reverse direction, whereby the substrate 9 is moved in the transport direction ((+ Y ) Direction) or the opposite direction ((−Y) direction).

  As shown in FIGS. 1 and 2, the plurality of nozzles 4 has a constant nozzle pitch in the transport direction in the processing chamber 11 (that is, the distance between the jet nozzles of two adjacent nozzles 4, in FIG. 2. And a slit-like spout 40 that is parallel to the substrate 9 and extends in a direction perpendicular to the transport direction (that is, the X direction). Each nozzle 4 is a so-called two-fluid nozzle that generates a droplet of the treatment liquid by mixing the treatment liquid and the gas inside and ejects the droplet from the ejection port 40 toward the substrate 9. . The nozzle pitch P is preferably obtained by equally dividing the length in the transport direction of an area to be processed on the substrate 9 (in this embodiment, the entire upper surface of the substrate 9 and hereinafter referred to as a “processing area”). It is taken as a distance. 1 and 2, the nozzle pitch P is a distance obtained by dividing the length of the substrate 9 in the transport direction into five equal parts. Further, the length of the ejection port 40 is set to be equal to or longer than the length capable of ejecting the treatment liquid droplets uniformly over the entire width of the processing region, and is at least perpendicular to the transport direction of the processing region on the substrate 9. More than the width of the direction.

  FIG. 3 is a longitudinal sectional view of the nozzle 4, and FIG. 4 is a view showing the (+ Y) side of the nozzle 4. As shown in FIG. 3, the nozzle 4 has a structure in which an orifice plate 42 is sandwiched between a first slit plate 41 and a second slit plate 43. As described above, the end face plate 44 is attached via a seal member (not shown). The second slit plate 43 is provided with a plurality of gas supply ports 45 at a constant pitch in the X direction. The first slit plate 41 has a processing liquid supply port 46 (see FIG. 3) at the same position as the gas supply port 45. Reference) is provided. The processing liquid supply port 46 and the gas supply port 45 are connected to the processing liquid supply unit 2 and the gas supply unit 5 shown in FIG. Then, the pump 21 and the gas supply unit 5 of the processing liquid supply unit 2 are operated by a command from the control circuit 6, whereby the ejection of the processing liquid droplets from the plurality of nozzles 4 is controlled.

  As shown in FIGS. 3 and 4, the nozzle 4 includes a gas-liquid mixing chamber 411 for mixing the processing liquid and the gas, a distribution chamber 421 for making the pressure applied to the processing liquid uniform, and a gas A plurality of communication pipes 422 for communicating the liquid mixing chamber 411 and the distribution chamber 421 are provided. A small slit-like gap is also provided between the orifice plate 42 and the second slit plate 43, and this gap serves as a gas passage 431 through which the gas from the gas supply port 45 is supplied. A slit-like gap between the first slit plate 41 and the second slit plate 43 serves as a flow path for droplets of the processing liquid, and an opening at the lower end of the flow path serves as one jet port 40.

  FIG. 5 is a view of a part of the AA cross section of the nozzle 4 shown in FIG. 4 as viewed from the (+ Z) side. The distribution chamber 421 and the plurality of communication pipes 422 of the nozzle 4 are formed by overlapping the first slit plate 41 and the orifice plate 42. As shown in FIGS. 3 to 5, the distribution chamber 421 has a rectangular cross-sectional shape and continuously extends in the X direction. The distribution chamber 421 uniformly distributes the pressure of the processing liquid in the X direction so as to communicate with the plurality of communication chambers. The processing liquid is evenly distributed to the tube 422. The plurality of communication pipes 422 are arranged at a constant pitch in the X direction, each communication pipe 422 extends in the vertical direction, and the cross-sectional shape by a horizontal plane is rectangular.

  6 is an enlarged view of the gas-liquid mixing chamber 411 shown in FIG. As shown in FIG. 6, the gas-liquid mixing chamber 411 is formed between the first slit plate 41, the orifice plate 42 and the second slit plate 43, and is slightly higher than other regions below the opening of the communication pipe 422. And has a collision surface 4111 that extends, and continuously extends in the X direction as shown in FIG. The processing liquid supplied from the plurality of communication pipes 422 to the gas-liquid mixing chamber 411 vigorously collides with the collision surface 4111 and is crushed and guided to the second slit plate 43 side of the gas-liquid mixing chamber 411, and the gas path 431 The liquid droplets of the processing liquid are generated by colliding with the high-speed gas supplied from. That is, the nozzle 4 is a so-called internal mixing type two-fluid nozzle. The generated droplets of the processing liquid are ejected from the slit-shaped ejection port 40 toward the substrate 9.

  The nozzle 4 can generate a minute droplet of the treatment liquid by colliding the treatment liquid and the gas, and can eject the droplet at a high speed by ejecting the minute droplet together with the gas. And processing efficiency can be improved. In addition, by changing the size of the collision surface 4111 according to the supply pressure of the processing liquid or gas, the particle size of the droplet can be changed, and the substrate 9 can be optimally processed.

  FIG. 7 is a diagram showing a flow of operations of the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIGS. 1 and 2, the distance L between the jet nozzles 40 of the two nozzles 4 located at both ends in the transport direction among the plurality of nozzles 4 is the processing region on the substrate 9. More than the length of the conveyance direction plus the nozzle pitch P (preferably, the length of the processing region in the conveyance direction plus a (positive) integer multiple of the nozzle pitch P), While the process liquid droplets are ejected from the plurality of nozzles 4 toward the transport path together with the gas (hereinafter referred to as “process liquid spray process”), the substrate transport mechanism 3 transports the substrate 9. The surface of the substrate 9 is processed while performing a step of moving and swinging a certain distance in the direction and the opposite direction (hereinafter referred to as “swing step”). Hereinafter, the details of the operation of the substrate processing apparatus 1 will be described.

  In the substrate processing apparatus 1, first, a process of transporting the substrate 9 in a predetermined transport direction (hereinafter referred to as “substrate transport process”) by the substrate transport mechanism 3 shown in FIG. 1 is started (step S <b> 111). The substrate 9 is carried into the processing chamber 11. The passage of the end (−Y) side of the substrate 9 (hereinafter referred to as “rear end”) is detected by the first sensor 15 and it is confirmed that the entire substrate 9 has been carried into the processing chamber 11. (Step S112), the pump 21 and the gas supply unit 5 are activated by the control circuit 6, and a treatment liquid ejection process for ejecting droplets of the treatment liquid from the plurality of nozzles 4 is started (Step S113).

  While the processing liquid ejection process is being performed, the substrate transport process is continued, and the (+ Y) side end of the substrate 9 (hereinafter referred to as the “tip”) is detected by the second sensor 16 (step). In S121, a reverse rotation command is transmitted from the control circuit 6 to the motor 32, and the substrate 9 is transported in the direction opposite to the transport direction (that is, the (−Y) direction) (step S122). Thereby, while the processing liquid ejection process is performed, the substrate 9 is transported in the opposite direction, and the rear end of the substrate 9 is eventually detected by the first sensor 15 (step S123).

  With the above operation, in the substrate processing apparatus 1, the rear end of the substrate 9 coincides with the ejection port 40 of the nozzle 4 located at the rearmost among the plurality of nozzles 4 (that is, in FIG. 1 at the time of step S112). The processing region on the substrate 9 is reciprocated (that is, oscillated) within the range between the jet nozzles 40 of the two nozzles 4 positioned at both ends in the transport direction from the state shown in FIG. By returning to this state, one swinging process is completed. In order to accurately realize the uniform processing, it is preferable that the swing distance of the substrate 9 is an integral multiple of the nozzle pitch P.

  When the rear end of the substrate 9 is detected by the first sensor 15 in the swing process, it is confirmed whether or not the swing process has been performed a predetermined number of times (step S124), and it is determined that the swing process is necessary. Then, a forward rotation command is transmitted from the control circuit 6 to the motor 32, the substrate 9 is transported in the transport direction, and the process returns to step S121 (step S125). Thereby, the swinging process of the substrate 9 is repeated while the processing liquid ejection process is performed (steps S121 to S123).

  When it is confirmed that the substrate 9 has been swung a predetermined number of times (step S124), the ejection of the processing liquid is stopped (step S131), and a forward rotation command is transmitted from the control circuit 6 to the motor 32. The substrate 9 is unloaded from the unloading port 13 (step S132). As described above, the swinging process is executed as a part of the substrate transfer process. Further, after the final swinging process, further processing may be performed until the tip of the substrate 9 is detected by the second sensor 16. In this case, the swinging process is substantially extended by 0.5 times.

  As described above, the configuration and operation of the substrate processing apparatus 1 have been described. In the substrate processing apparatus 1, droplets of the processing liquid are ejected at a high speed together with the gas from the slit-like ejection port 40 extending in a direction perpendicular to the transport direction. Thus, it is possible to efficiently perform processing while preventing processing unevenness from occurring in a direction perpendicular to the transport direction on the substrate 9, and a plurality of nozzles 4 in a wider range than the processing region of the substrate 9 in the transport direction. Within a range between the jet nozzles 40 of the two nozzles 4 located at both ends (exactly, within a range where the treatment region is included between the jet nozzles 40 at both ends), the substrate 9 is separated by a distance greater than the nozzle pitch. By swinging only once or more, processing unevenness can be prevented in the entire processing region of the substrate 9. As a result, the entire processing region on the substrate 9 can be appropriately processed by only swinging the substrate 9 without swinging the nozzle 4 and without increasing the size of the entire apparatus. In particular, uniform processing can be performed at a high etching rate, and throughput can be improved while maintaining high processing quality.

  FIG. 8 is a diagram showing a substrate processing apparatus 1a according to the second embodiment of the present invention. The substrate processing apparatus 1a has the same structure as the substrate processing apparatus 1 of FIG. 1 except that the number of nozzles 4 in the substrate processing apparatus 1 shown in FIG. 1 is reduced and only two nozzles 4 are arranged. The same components are denoted by the same reference numerals. Also in the substrate processing apparatus 1a, as in the substrate processing apparatus 1, an etching solution is used as the processing solution. The number of nozzles 4 may be one or three or more, and at least one nozzle 4 is provided in the substrate processing apparatus 1a. When the number of nozzles 4 is three or more, the plurality of nozzles 4 are arranged in the carrying direction so that the etching solution is uniformly ejected in the carrying direction in the substrate processing apparatus 1a and the processing region is more uniformly processed. Are preferably arranged at a constant nozzle pitch. In this case, unlike the first embodiment, the nozzle pitch does not have to be a distance obtained by equally dividing the length of the processing region on the substrate 9 in the transport direction.

  In the substrate processing apparatus 1a, the first sensor 15 for detecting the rear end of the substrate 9 and the second sensor 16 for detecting the front end of the substrate 9 are arranged on the transport path where the processing region on the substrate 9 is jetted of the etching liquid. (That is, the distance between the first sensor 15 and the second sensor 16 is on the transport path where the etching solution is jetted twice the length of the processing region on the substrate 9 in the transport direction). The substrate 9 is transported within the range between the two sensors while the droplets of the etching solution are ejected from all the nozzles 4 at a predetermined position (more than the length of the region plus the length). The surface of the substrate 9 is processed by swinging it once or more in the transport direction and in the opposite direction in the path.

  When the substrate processing apparatus 1a processes the substrate 9, the operation shown in FIG. 7 is performed similarly to the substrate processing apparatus 1 of FIG. That is, the substrate transfer process by the substrate transfer mechanism 3 shown in FIG. 8 is started (FIG. 7: Step S111), and the passage of the rear end of the substrate 9 is detected by the first sensor 15, and the entire substrate 9 is entirely inside the processing chamber 11. When it is confirmed that the gas has been carried into the chamber (step S112), the pump 21 and the gas supply unit 5 are activated by the control circuit 6, and the processing liquid ejection process is started (step S113). When the substrate transport process is continued and the tip of the substrate 9 is detected by the second sensor 16 as shown by the two-dot chain line in FIG. 8 (step S121), the control circuit 6 instructs the motor 32 to perform reverse rotation. Is transmitted, and the substrate 9 is transported in the direction opposite to the transport direction (that is, the (−Y) direction) (step S122). Thereby, while the processing liquid ejection process is performed, the substrate 9 is transported in the opposite direction, and the rear end of the substrate 9 is eventually detected by the first sensor 15 (step S123).

  Through the above operation, in the substrate processing apparatus 1a, the entire processing region on the substrate 9 is changed from the state in which the passage of the rear end of the substrate 9 is detected by the first sensor 15 (that is, the state indicated by the solid line in FIG. 8). However, the substrate 9 is swung so as to pass through the region on the transport path where the etching solution is jetted in the transport direction and the opposite direction, and the rear end of the substrate 9 returns to the original state again, thereby swinging once. The process ends.

  When the rear end of the substrate 9 is detected by the first sensor 15, it is confirmed whether or not the swinging process has been performed a predetermined number of times (step S124). Is transported in the transport direction, and the process returns to step S121 (step S125). Thereby, the swinging process of the substrate 9 is repeated while the processing liquid ejection process is performed (steps S121 to S123). When it is confirmed that the swing process of the substrate 9 has been performed a predetermined number of times (step S124), the ejection of the processing liquid is stopped (step S131), and the substrate 9 is unloaded from the carry-out port 13 (step S132). Also in the substrate processing apparatus 1a, further processing may be performed until the tip of the substrate 9 is detected by the second sensor 16 after the last swinging step.

  As described above, in the substrate processing apparatus 1a, the droplets of the etching solution are ejected together with the gas from the nozzle 4 having the slit-like ejection port 40 extending in the direction perpendicular to the conveyance direction, thereby being conveyed on the substrate 9. It is possible to efficiently perform processing while preventing processing unevenness from occurring in a direction perpendicular to the direction. Further, the entire processing region on the substrate 9 is a region on the transport path through which the etching solution is ejected. By passing through the transport direction and the opposite direction and swinging once or more, it is possible to prevent processing unevenness from occurring in the entire processing region of the substrate only by swinging the substrate without swinging the nozzle. Moreover, since the number of nozzles 4 can be reduced unlike the first embodiment, the number of nozzles 4 can be reduced and the manufacturing cost of the apparatus can be reduced.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made.

  For example, the processing region on the substrate 9 is usually the entire surface of the substrate 9, but the processing region on the substrate 9 may be a part of the substrate 9.

  The internal structure of the nozzle 4 is not limited to the above embodiment. For example, the distribution chamber 421 does not have to have a rectangular cross-sectional shape, and may have a half-moon shape. The shape need not be rectangular, and may be circular. The collision surface 4111 may also be a fan-shaped and concave inclined surface that spreads toward the gas path 431. Further, the nozzle 4 does not have to generate a droplet inside, and a separately generated droplet may be supplied to the nozzle 4 together with the carrier gas and ejected from the ejection port 40.

  Further, in the substrate processing apparatuses 1 and 1a, the substrate 9 may be transported in an inclined state with respect to a horizontal direction perpendicular to the transport direction so that the processing liquid flows out from the substrate 9 quickly.

  An object to be processed in the substrate processing apparatus may be a substrate such as a semiconductor substrate or a printed wiring board in addition to the glass substrate.

1 is a front view showing a substrate processing apparatus according to a first embodiment. It is a top view which shows a part of substrate processing apparatus. It is a longitudinal cross-sectional view of a nozzle. It is a right view of a nozzle. It is a cross-sectional view showing a part of the distribution chamber. It is a longitudinal cross-sectional view which shows a gas-liquid mixing chamber. It is a figure which shows the flow of operation | movement of a substrate processing apparatus. It is a front view which shows the substrate processing apparatus which concerns on 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1a Substrate processing apparatus 2 Processing liquid supply part 3 Substrate conveyance mechanism 4 Nozzle 5 Gas supply part 9 Substrate 40 Jet outlet 411 Gas-liquid mixing chamber 421 Distribution chamber 4111 Colliding surface S111-S113, S121-S125, S131, S132 Step

Claims (5)

A substrate processing apparatus for supplying an etching solution to a substrate to process the substrate,
A substrate transport mechanism for transporting the substrate in a predetermined transport direction;
Each of which is parallel to the substrate and at least one nozzle that ejects a droplet of an etching solution together with a gas from a slit-like ejection port extending in a direction perpendicular to the transport direction toward the transport path of the substrate. ,
With
The length of the jet outlet in the direction perpendicular to the transport direction is equal to or greater than the width in the direction perpendicular to the transport direction of the processing region on the substrate,
While the droplet of the etching solution is ejected from the at least one nozzle, the substrate transport mechanism swings the substrate at least once in the transport direction and the opposite direction in the transport path. Substrate processing apparatus. The substrate processing apparatus according to claim 1,
The at least one nozzle is a plurality of nozzles;
The substrate processing apparatus, wherein the plurality of nozzles are arranged at a constant nozzle pitch in the transport direction. The substrate processing apparatus according to claim 1, wherein:
In each of the at least one nozzle, a droplet of the etching solution is generated when the etching solution collides with a high-speed gas. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing characterized in that the entire processing region on the substrate passes through the region on the transporting path where the etching solution is jetted in the transporting direction and the opposite direction when swinging by the substrate transporting mechanism. apparatus. A substrate processing method for supplying an etching solution to a substrate to process the substrate,
A substrate transfer step of transferring the substrate in a predetermined transfer direction;
Each of the droplets of the etching solution is jetted together with a gas from the at least one nozzle having a slit-like jet port extending in a direction perpendicular to the transport direction and parallel to the substrate toward the transport path of the substrate. A treatment liquid jetting process,
With
The length of the jet outlet in the direction perpendicular to the transport direction is equal to or greater than the width in the direction perpendicular to the transport direction of the processing region on the substrate,
A substrate processing method, wherein the substrate is swung at least once in the transport direction and in the opposite direction in the transport path while the etching liquid droplets are ejected from the at least one nozzle.

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