JP2006229022A - 光電変換膜積層型固体撮像素子 - Google Patents
光電変換膜積層型固体撮像素子 Download PDFInfo
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- JP2006229022A JP2006229022A JP2005041940A JP2005041940A JP2006229022A JP 2006229022 A JP2006229022 A JP 2006229022A JP 2005041940 A JP2005041940 A JP 2005041940A JP 2005041940 A JP2005041940 A JP 2005041940A JP 2006229022 A JP2006229022 A JP 2006229022A
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- photoelectric conversion
- conversion film
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 104
- 239000007787 solid Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 238000000926 separation method Methods 0.000 abstract description 7
- 239000003086 colorant Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 142
- 239000012535 impurity Substances 0.000 description 12
- 238000001514 detection method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Abstract
【解決手段】 共通電極膜113,117,121と画素対応の画素電極膜111,115,119とによって挟まれた光電変換膜112,116,120が絶縁膜114,118を介して半導体基板100の上に少なくとも3層積層される光電変換膜積層型固体撮像素子において、前記3層の各層の光電変換膜112,116,120が前記画素対応に分離して形成されている。また、前記3層の各層の光電変換膜112,116,120の面積を、夫々の光電変換特性に応じて設定する。
【選択図】 図1
Description
特許文献2に記載されたイメージセンサは、シリコンの超微粒子を媒質内に分散して光電変換層とし、超微粒子の粒径を変えた複数の光電変換層を半導体基板の上に3層積層し、夫々の光電変換層で、赤色,緑色,青色の夫々の受光量に応じた電気信号を発生させる様になっている。
111,115,119 画素電極膜
112,116,116a,120 光電変換膜
113,117,121 共通電極膜
114,118 絶縁膜
122,123,124 縦配線
141,142,143 ダイオード部(電荷蓄積領域)
151,152,153 電荷転送路
191,192,193 電極(遮光膜を兼用する)
Claims (3)
- 共通電極膜と画素対応の画素電極膜とによって挟まれた光電変換膜が絶縁膜を介して半導体基板の上に少なくとも3層積層される光電変換膜積層型固体撮像素子において、前記3層の各層の光電変換膜が前記画素対応に分離して形成されていることを特徴とする光電変換膜積層型固体撮像素子。
- 画素毎の前記3層の各層の光電変換膜の面積を夫々の光電変換特性に応じて設定したことを特徴とする請求項1に記載の光電変換膜積層型固体撮像素子。
- 固体撮像素子の中央部における画素の前記3層の光電変換膜の夫々の面積に対して前記固体撮像素子の周辺部の画素の前記3層の光電変換膜の夫々の面積を広くしたことを特徴とする請求項1または請求項2に記載の光電変換膜積層型固体撮像素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005041940A JP4547281B2 (ja) | 2005-02-18 | 2005-02-18 | 光電変換膜積層型固体撮像素子 |
US11/356,016 US7214921B2 (en) | 2005-02-18 | 2006-02-17 | Photoelectric converting layer lamination type solid-state image pick-up device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005041940A JP4547281B2 (ja) | 2005-02-18 | 2005-02-18 | 光電変換膜積層型固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006229022A true JP2006229022A (ja) | 2006-08-31 |
JP4547281B2 JP4547281B2 (ja) | 2010-09-22 |
Family
ID=36911691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005041940A Expired - Fee Related JP4547281B2 (ja) | 2005-02-18 | 2005-02-18 | 光電変換膜積層型固体撮像素子 |
Country Status (2)
Country | Link |
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US (1) | US7214921B2 (ja) |
JP (1) | JP4547281B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008066402A (ja) * | 2006-09-05 | 2008-03-21 | Fujifilm Corp | 撮像素子および撮像装置 |
WO2016084629A1 (ja) * | 2014-11-27 | 2016-06-02 | ソニー株式会社 | 固体撮像素子および電子機器 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007104116A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | フィルムカートリッジ型デジタルカメラ |
KR101217554B1 (ko) * | 2006-05-09 | 2013-01-02 | 삼성전자주식회사 | 이음매가 없는 폴더형 디스플레이 장치 |
JP2009010075A (ja) * | 2007-06-27 | 2009-01-15 | Fujifilm Corp | 放射線画像検出器 |
JP4947006B2 (ja) * | 2008-08-05 | 2012-06-06 | ソニー株式会社 | 光電変換装置及び光電変換素子 |
US7910961B2 (en) * | 2008-10-08 | 2011-03-22 | Omnivision Technologies, Inc. | Image sensor with low crosstalk and high red sensitivity |
TWI431573B (zh) * | 2009-04-22 | 2014-03-21 | Prime View Int Co Ltd | 可撓性電極陣列基板與可撓性顯示器 |
CN101876770B (zh) * | 2009-04-30 | 2013-06-19 | 元太科技工业股份有限公司 | 挠性电极阵列基板与挠性显示器 |
JP5530839B2 (ja) * | 2010-07-09 | 2014-06-25 | パナソニック株式会社 | 固体撮像装置 |
KR102248464B1 (ko) * | 2013-07-24 | 2021-05-07 | 삼성디스플레이 주식회사 | 접이식 표시 장치 및 그 제조 방법 |
TWI612505B (zh) * | 2016-12-02 | 2018-01-21 | 友達光電股份有限公司 | 顯示面板 |
CN112331684B (zh) * | 2020-11-20 | 2024-02-09 | 联合微电子中心有限责任公司 | 图像传感器及其形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083946A (ja) * | 2000-09-07 | 2002-03-22 | Nippon Hoso Kyokai <Nhk> | イメージセンサ |
JP2004056407A (ja) * | 2002-07-19 | 2004-02-19 | Fuji Photo Film Co Ltd | 固体電子撮像素子および固体電子撮像装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58103165A (ja) | 1981-12-15 | 1983-06-20 | Fuji Photo Film Co Ltd | 3層4階構造の固体カラ−撮像デバイス |
JP3405099B2 (ja) | 1996-11-27 | 2003-05-12 | 松下電器産業株式会社 | カラーセンサ |
US7570292B2 (en) * | 2004-03-19 | 2009-08-04 | Fujifilm Corporation | Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element |
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2005
- 2005-02-18 JP JP2005041940A patent/JP4547281B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-17 US US11/356,016 patent/US7214921B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083946A (ja) * | 2000-09-07 | 2002-03-22 | Nippon Hoso Kyokai <Nhk> | イメージセンサ |
JP2004056407A (ja) * | 2002-07-19 | 2004-02-19 | Fuji Photo Film Co Ltd | 固体電子撮像素子および固体電子撮像装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008066402A (ja) * | 2006-09-05 | 2008-03-21 | Fujifilm Corp | 撮像素子および撮像装置 |
WO2016084629A1 (ja) * | 2014-11-27 | 2016-06-02 | ソニー株式会社 | 固体撮像素子および電子機器 |
US10700132B2 (en) | 2014-11-27 | 2020-06-30 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic apparatus |
TWI709340B (zh) * | 2014-11-27 | 2020-11-01 | 日商索尼半導體解決方案公司 | 固體攝像元件及電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JP4547281B2 (ja) | 2010-09-22 |
US20060186316A1 (en) | 2006-08-24 |
US7214921B2 (en) | 2007-05-08 |
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