JP2006216772A5 - - Google Patents

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Publication number
JP2006216772A5
JP2006216772A5 JP2005027815A JP2005027815A JP2006216772A5 JP 2006216772 A5 JP2006216772 A5 JP 2006216772A5 JP 2005027815 A JP2005027815 A JP 2005027815A JP 2005027815 A JP2005027815 A JP 2005027815A JP 2006216772 A5 JP2006216772 A5 JP 2006216772A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2005027815A
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Japanese (ja)
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JP2006216772A (ja
JP4617907B2 (ja
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Priority to JP2005027815A priority Critical patent/JP4617907B2/ja
Priority claimed from JP2005027815A external-priority patent/JP4617907B2/ja
Priority to US11/344,468 priority patent/US8513683B2/en
Publication of JP2006216772A publication Critical patent/JP2006216772A/ja
Publication of JP2006216772A5 publication Critical patent/JP2006216772A5/ja
Application granted granted Critical
Publication of JP4617907B2 publication Critical patent/JP4617907B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005027815A 2005-02-03 2005-02-03 光集積型半導体発光素子 Expired - Fee Related JP4617907B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005027815A JP4617907B2 (ja) 2005-02-03 2005-02-03 光集積型半導体発光素子
US11/344,468 US8513683B2 (en) 2005-02-03 2006-01-31 Optical integrated semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005027815A JP4617907B2 (ja) 2005-02-03 2005-02-03 光集積型半導体発光素子

Publications (3)

Publication Number Publication Date
JP2006216772A JP2006216772A (ja) 2006-08-17
JP2006216772A5 true JP2006216772A5 (enExample) 2007-08-09
JP4617907B2 JP4617907B2 (ja) 2011-01-26

Family

ID=36931269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005027815A Expired - Fee Related JP4617907B2 (ja) 2005-02-03 2005-02-03 光集積型半導体発光素子

Country Status (2)

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US (1) US8513683B2 (enExample)
JP (1) JP4617907B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850453B2 (ja) * 2005-08-11 2012-01-11 ローム株式会社 半導体発光装置の製造方法及び半導体発光装置
KR101280040B1 (ko) 2006-09-12 2013-07-01 삼성전자주식회사 멀티 빔형 레이저 장치 및 이를 이용한 화상형성장치
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009021506A (ja) * 2007-07-13 2009-01-29 Sharp Corp 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法
DE102008018038A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
JP5093033B2 (ja) * 2008-09-30 2012-12-05 ソニー株式会社 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置
DE102009058345B4 (de) 2009-12-15 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
GB2483689A (en) * 2010-09-16 2012-03-21 Sharp Kk A method of reducing the density of threading dislocations in light emitting devices, by the selective creation of cavities
JP2014049616A (ja) * 2012-08-31 2014-03-17 Sony Corp ダイオードおよびダイオードの製造方法
DE102016106493A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
WO2021251191A1 (ja) 2020-06-12 2021-12-16 日亜化学工業株式会社 レーザダイオード素子及びその製造方法
DE102022104563A1 (de) 2022-02-25 2023-08-31 Ams-Osram International Gmbh Verfahren zur herstellung einer halbleiterstruktur und halbleiterstruktur

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244570A (ja) * 2000-02-29 2001-09-07 Sony Corp 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法
US6939730B2 (en) * 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
JP4290358B2 (ja) * 2001-10-12 2009-07-01 住友電気工業株式会社 半導体発光素子の製造方法
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
JP2004193330A (ja) * 2002-12-11 2004-07-08 Sharp Corp モノリシック多波長レーザ素子とその製法
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2004327655A (ja) * 2003-04-24 2004-11-18 Sharp Corp 窒化物半導体レーザ素子、その製造方法および半導体光学装置
US7462882B2 (en) * 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
JP4501359B2 (ja) * 2003-05-30 2010-07-14 ソニー株式会社 半導体レーザ装置
JP4322187B2 (ja) * 2004-08-19 2009-08-26 シャープ株式会社 窒化物半導体発光素子

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