JP2006186347A5 - - Google Patents
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- Publication number
- JP2006186347A5 JP2006186347A5 JP2005347770A JP2005347770A JP2006186347A5 JP 2006186347 A5 JP2006186347 A5 JP 2006186347A5 JP 2005347770 A JP2005347770 A JP 2005347770A JP 2005347770 A JP2005347770 A JP 2005347770A JP 2006186347 A5 JP2006186347 A5 JP 2006186347A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal oxide
- forming
- manufacturing
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 41
- 229910044991 metal oxide Inorganic materials 0.000 claims 13
- 150000004706 metal oxides Chemical class 0.000 claims 13
- 230000015572 biosynthetic process Effects 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000002216 antistatic agent Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005347770A JP5089037B2 (ja) | 2004-12-03 | 2005-12-01 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004351263 | 2004-12-03 | ||
| JP2004351263 | 2004-12-03 | ||
| JP2005347770A JP5089037B2 (ja) | 2004-12-03 | 2005-12-01 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006186347A JP2006186347A (ja) | 2006-07-13 |
| JP2006186347A5 true JP2006186347A5 (enrdf_load_stackoverflow) | 2008-11-06 |
| JP5089037B2 JP5089037B2 (ja) | 2012-12-05 |
Family
ID=36739186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005347770A Expired - Fee Related JP5089037B2 (ja) | 2004-12-03 | 2005-12-01 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5089037B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100585806C (zh) | 2005-05-20 | 2010-01-27 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| JP5057703B2 (ja) * | 2005-05-31 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| TWI570900B (zh) * | 2006-09-29 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP5484853B2 (ja) * | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140896A (ja) * | 1985-12-13 | 1987-06-24 | 日本写真印刷株式会社 | Ｉｃカ−ドの製造方法 |
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4410928B2 (ja) * | 2000-11-21 | 2010-02-10 | Ｎｅｃ液晶テクノロジー株式会社 | 開口パターン形成方法及びそれを用いたアクティブマトリクス基板の製造方法 |
| JP2002236896A (ja) * | 2001-02-07 | 2002-08-23 | Toppan Printing Co Ltd | ヒートシール性を有するｉｃタグ |
| JP4019305B2 (ja) * | 2001-07-13 | 2007-12-12 | セイコーエプソン株式会社 | 薄膜装置の製造方法 |
| JP4566578B2 (ja) * | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
| JP4748943B2 (ja) * | 2003-02-28 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2005
- 2005-12-01 JP JP2005347770A patent/JP5089037B2/ja not_active Expired - Fee Related
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