JP2007013128A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007013128A5 JP2007013128A5 JP2006151079A JP2006151079A JP2007013128A5 JP 2007013128 A5 JP2007013128 A5 JP 2007013128A5 JP 2006151079 A JP2006151079 A JP 2006151079A JP 2006151079 A JP2006151079 A JP 2006151079A JP 2007013128 A5 JP2007013128 A5 JP 2007013128A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- metal
- metal oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 25
- 239000002184 metal Substances 0.000 claims 25
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 24
- 229910044991 metal oxide Inorganic materials 0.000 claims 22
- 150000004706 metal oxides Chemical class 0.000 claims 22
- 230000015572 biosynthetic process Effects 0.000 claims 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 12
- 229960001730 nitrous oxide Drugs 0.000 claims 12
- 235000013842 nitrous oxide Nutrition 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052786 argon Inorganic materials 0.000 claims 6
- 239000003795 chemical substances by application Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006151079A JP5057703B2 (ja) | 2005-05-31 | 2006-05-31 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005158761 | 2005-05-31 | ||
| JP2005158761 | 2005-05-31 | ||
| JP2006151079A JP5057703B2 (ja) | 2005-05-31 | 2006-05-31 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007013128A JP2007013128A (ja) | 2007-01-18 |
| JP2007013128A5 true JP2007013128A5 (enrdf_load_stackoverflow) | 2009-06-25 |
| JP5057703B2 JP5057703B2 (ja) | 2012-10-24 |
Family
ID=37751156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006151079A Expired - Fee Related JP5057703B2 (ja) | 2005-05-31 | 2006-05-31 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5057703B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1970952A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN101803008B (zh) * | 2007-09-07 | 2012-11-28 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2010047288A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
| KR101930230B1 (ko) | 2009-11-06 | 2018-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| KR101750982B1 (ko) * | 2009-11-06 | 2017-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN102254815A (zh) * | 2011-07-05 | 2011-11-23 | 上海宏力半导体制造有限公司 | 半导体器件制备过程中导电层的刻蚀方法 |
| US8962386B2 (en) | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2015029286A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 |
| US9799829B2 (en) | 2014-07-25 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, light-emitting device, module, and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4566578B2 (ja) * | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
| JP4748943B2 (ja) * | 2003-02-28 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI221010B (en) * | 2003-08-07 | 2004-09-11 | Ind Tech Res Inst | A method for transferably pasting an element |
| JP5089037B2 (ja) * | 2004-12-03 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2006
- 2006-05-31 JP JP2006151079A patent/JP5057703B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007013128A5 (enrdf_load_stackoverflow) | ||
| Tiggelaar et al. | Stability of thin platinum films implemented in high-temperature microdevices | |
| TWI698544B (zh) | 選擇性地沈積材料的方法及選擇性地沈積金屬氧化物膜的方法 | |
| JP5585909B2 (ja) | コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法 | |
| TW200950100A (en) | A method for manufacturing a thin-film transistor, a thin-film transistor | |
| JP2006344929A5 (enrdf_load_stackoverflow) | ||
| KR100883139B1 (ko) | 루테늄계 전극을 구비한 캐패시터 및 그 제조 방법 | |
| JP2004523652A5 (enrdf_load_stackoverflow) | ||
| TW201250840A (en) | Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures | |
| JP2008263182A5 (enrdf_load_stackoverflow) | ||
| JP2009158485A5 (enrdf_load_stackoverflow) | ||
| TW440937B (en) | Iridium conductive electrode/barrier structure and method for same | |
| JP6504555B2 (ja) | 原子拡散接合方法及び前記方法により接合された構造体 | |
| JPWO2019142080A5 (enrdf_load_stackoverflow) | ||
| TW201001499A (en) | A thin-film transistor, method for manufacturing a thin-film transistor | |
| JP2006135305A5 (enrdf_load_stackoverflow) | ||
| TWI482874B (zh) | 金紅石結構氧化鈦的製備方法及其疊層結構 | |
| JP2004221561A5 (enrdf_load_stackoverflow) | ||
| JP2005340260A (ja) | 磁性体層の加工方法および磁気記憶装置の製造方法 | |
| JP2000260958A (ja) | イリジウム複合障壁構造およびその形成方法 | |
| JP2006186347A5 (enrdf_load_stackoverflow) | ||
| JP5482441B2 (ja) | 化合物半導体素子の製造方法 | |
| JP2007013108A5 (enrdf_load_stackoverflow) | ||
| TW200828347A (en) | AI-based alloy wiring material and element structure using the same | |
| JPWO2008136259A1 (ja) | ダイヤモンド半導体素子におけるショットキー電極及びその製造方法 |