JP2004221561A5 - - Google Patents
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- Publication number
- JP2004221561A5 JP2004221561A5 JP2003428907A JP2003428907A JP2004221561A5 JP 2004221561 A5 JP2004221561 A5 JP 2004221561A5 JP 2003428907 A JP2003428907 A JP 2003428907A JP 2003428907 A JP2003428907 A JP 2003428907A JP 2004221561 A5 JP2004221561 A5 JP 2004221561A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- film
- substrate
- forming
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 27
- 239000002184 metal Substances 0.000 claims 27
- 239000000758 substrate Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 19
- 239000010410 layer Substances 0.000 claims 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 12
- 229910052739 hydrogen Inorganic materials 0.000 claims 12
- 239000001257 hydrogen Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000010438 heat treatment Methods 0.000 claims 9
- 150000004767 nitrides Chemical class 0.000 claims 9
- 239000000853 adhesive Substances 0.000 claims 7
- 230000001070 adhesive effect Effects 0.000 claims 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical group O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003428907A JP4637477B2 (ja) | 2002-12-27 | 2003-12-25 | 剥離方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002382008 | 2002-12-27 | ||
| JP2003428907A JP4637477B2 (ja) | 2002-12-27 | 2003-12-25 | 剥離方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004221561A JP2004221561A (ja) | 2004-08-05 |
| JP2004221561A5 true JP2004221561A5 (enrdf_load_stackoverflow) | 2006-11-16 |
| JP4637477B2 JP4637477B2 (ja) | 2011-02-23 |
Family
ID=32911347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003428907A Expired - Fee Related JP4637477B2 (ja) | 2002-12-27 | 2003-12-25 | 剥離方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4637477B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288773B2 (en) | 2004-08-23 | 2012-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and manufacturing method thereof |
| JP4912641B2 (ja) * | 2004-08-23 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 無線チップの作製方法 |
| US8030132B2 (en) | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
| JP5084173B2 (ja) * | 2005-05-31 | 2012-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5586920B2 (ja) | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| JP5186663B2 (ja) * | 2008-12-19 | 2013-04-17 | 富士通株式会社 | 微細構造の製造方法および回路基盤の製造方法 |
| KR20150120376A (ko) | 2013-02-20 | 2015-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 반도체 장치, 및 박리 장치 |
| US9799829B2 (en) * | 2014-07-25 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, light-emitting device, module, and electronic device |
| TW201808628A (zh) * | 2016-08-09 | 2018-03-16 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3738799B2 (ja) * | 1996-11-22 | 2006-01-25 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 |
| JP3116085B2 (ja) * | 1997-09-16 | 2000-12-11 | 東京農工大学長 | 半導体素子形成法 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
-
2003
- 2003-12-25 JP JP2003428907A patent/JP4637477B2/ja not_active Expired - Fee Related