TWI395271B - 一種採用化學鍍製造半導體裝置的方法 - Google Patents

一種採用化學鍍製造半導體裝置的方法 Download PDF

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TWI395271B
TWI395271B TW097103010A TW97103010A TWI395271B TW I395271 B TWI395271 B TW I395271B TW 097103010 A TW097103010 A TW 097103010A TW 97103010 A TW97103010 A TW 97103010A TW I395271 B TWI395271 B TW I395271B
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wafer
protective tape
protective
protective coating
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Feng Tao
Sun Ming
Se Ho Yueh
Liu Kai
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Alpha & Omega Semiconductor
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Description

一種採用化學鍍製造半導體裝置的方法
本發明涉及一種製作半導體裝置的方法，特別涉及一種在化學鍍(即化學沉積法)及切割鍍層晶圓為獨立晶片過程中保護晶圓後表面的方法。
化學鍍鎳和化學沉積法摻雜金方法被廣泛應用於在晶圓前表面的鋁合金襯墊上沉積鎳/金塗層，而不需要掩蓋物或電鍍電流。這是一個需要付出成本的有效途徑，為銅電線焊接提供一個堅硬的外層，為回形焊接和晶片封裝提供一個潮濕的焊接面和擴散屏障。
在化學鍍鎳過程中,晶圓的後表面需要覆蓋一個絕緣層以避免鎳電鍍，通常在該區域的附著力較低。多餘的電鍍浪費鎳並且減少電鍍溶液的使用壽命。此外，若引入的晶圓在其後表面有金屬層，如銀層，將會產生對後表面金屬的腐蝕以及對電鍍化學品的污染。抗蝕層通常被用於保護晶圓的後表面。然而，這種方法必須包含一個抗蝕物塗抹過程和一個抗蝕物脫模過程。後一過程可能包括額外的清潔步驟以除去殘餘的抗蝕物。這一複雜過程降低了產品的生產量，並且提高了總成本。
在另一種方法中，一個暫時性保護膠帶在化學鍍(化學沉積法)前被用於晶圓的後表面。然而，在化學腐蝕下這種帶子的黏合性通常很差，並且可能導致晶圓周圍區域中保護帶嚴重分解的問題，進而給電鍍化學品帶來污染。加之這些使用和除去保護帶的額外步驟將會增加成本，並且增加晶圓，特別是相對較薄的晶圓發生爆裂或開裂的機會。
因此本技術領域需要一種採用化學鍍(化學沉積法)來製造半導體裝置的方法，以克服先前技術的不足和缺陷。該方法進一步的提供了一個簡單的生產流程，該流程具有較好的保護效果、高生產量和低成本。
根據本發明的一個方面，一種採用化學鍍(化學沉積法)來製造半導體裝置的方法包括以下步驟：層壓晶圓後表面和一個具有保護帶的框架；在晶圓週邊區域與保護帶鄰接暴露區域上塗抹保護塗層；保護塗層和晶圓形成一個被保護的晶圓基片；加工被框架支撐的保護塗層以增加保護塗層的粘結力；從保護帶圍繞的保護塗層上切割被保護的晶圓基片；化學鍍(化學沉積法)被保護的晶圓基片；層壓被保護的晶圓基片具有保護帶的一側和第二個保護帶；切割晶圓變成單獨的晶片；從用於固定晶片的保護帶上拾取晶片。
根據本發明的另一方面，一種採用化學鍍(化學沉積法)來製造半導體裝置的方法包括以下步驟：採用紫外線釋放粘結劑來層壓晶圓後表面和一個具有保護帶的框架；在晶圓週邊區域及保護帶鄰接暴露區域上塗抹保護塗層；保護塗層和晶片形成一個被保護的晶圓基片；加工框架、保護塗層和被保護的晶圓基片以增加保護塗層的粘結力；從保護帶圍繞的保護塗層上切割被保護的晶圓基片；化學鍍(化學沉積法)被保護的晶圓基片；將被保護的晶圓基片裝載在一個除去保護帶支撐的切割設備上；切割被保護的晶圓基片變成單獨的晶片；紫外線照射保護帶以減小粘結力；從用於固定晶片的保護帶上拾取晶片。
根據本發明的另一方面，如果保護帶的粘結層在濕處理過程中可以抵抗化學腐蝕，則上述方法中的塗抹保護塗層步驟和加工步驟可以省略。如上所述，則也可以直接在保護帶上切割晶圓。
以上大略描述了本發明的較重要的技術特徵，從而使其後的詳細敍述可以被更好的理解，使本發明對本技術領域的貢獻可以被更好的認可。當然，本發明的其他技術特徵將會在以下詳細描述並形成相應的從屬權利要求。
在闡述本發明至少一個實施例之前，本發明應該被理解為不盡限於其說明書及附圖所公開的功能組成和這些功能組成經排列組合的範圍。本發明可以被其他實施例實現，並且可以以多種方式實施。同樣地，在此所用的措辭和術語連同摘要應被理解為描述目的，而不應該被理解為限制目的。
同樣的，本領域的技術人員利用本發明所公開的原理為基礎可以以其他方式實現本發明的目的。因此，權利要求應被認為包括其範圍內的這些等同的結構，應為它們並未脫離本發明的精神和範圍。
本發明參考說明書附圖進行詳細的闡述，提供說明性的例子以使得本領域的技術人員能實施本發明。特別地，以下的數字和例子不意味著限定本發明的範圍。本發明的某些元件能夠部分或全部採用現有零件實現，只有那些理解本發明所必需的那些現有零件會被描述，其他的現有零件的詳細描述將被省略，以使本發明不會描述模糊。進一步而言，本發明包括根據說明書附圖而得到的現有技術或未來技術的等同零件。
本發明公開了一種採用化學鍍(化學沉積法)製造半導體裝置的方法，該方法利用保護帶來保護晶圓後表面區域和切割晶片。為了在化學鍍(化學沉積法)過程中，實現更好的對晶圓後表面的保護，在晶圓週邊塗抹有塗層。
如第1圖至第8圖所示，指定100代替採用化學鍍(化學沉積法)製造半導體裝置，包括步驟110，即，晶片200的後表面205層壓在保護帶210上。保護帶210包括一個具有抗蝕層的切割帶，可以在化學鍍(化學沉積法)過程中抗化學和高溫腐蝕，例如，根據普林斯頓大學的研究，HTCR200－S帶可用於電鍍鋁工藝。
保護帶210具有框架250的支撐，在步驟120中，保護塗層220被塗抹在晶片200的週邊部分225，並從晶圓邊緣207向內延伸約1mm－3mm，從晶圓邊緣207向外延伸2mm－6mm至保護帶210的暴露區域230。保護塗層220形成了一個環狀塗層227覆蓋在晶圓週邊部分225和保護帶210的暴露區域230之間的邊界。保護塗層220包括一種過鉻酸鹽(percholoroethylene)和輕石油醚(VM&P naptha)的合成物，該合成物可從普林斯頓技術大學得知，其美國商品名為Micro301S。可選擇地，保護塗層也可包括可承受化學鍍(化學沉積法)化學腐蝕的抗蝕物。
指定為300的被保護的晶圓基片連同框架250和保護帶210一起在烤爐中被加工，以凝固並增加保護塗層220的粘合力。
環形熱壓縮和切割單元具有一個比晶圓200半徑大2mm－6mm的半徑(圖中未示出)，該單元被用於提高保護塗層220和晶圓週邊225外側的保護帶210間的粘結力，並且被用於在步驟140中切割被保護的晶圓。得到的被保護的晶圓基片在第4圖中示出，並指定為400。
被保護的晶圓基片400在步驟150中被化學鍍(化學沉積法)，以在晶圓前表面203形成鍍有金屬的結構510。得到的具有鍍層的被保護的晶圓基片在第5圖中示出，並指定為500。
在步驟160中，晶圓基片500被層壓進第二個保護帶620。保護帶620最好具有比保護帶210更強的粘結力。切割框架610被用於支撐第二個保護帶620。得到的結構物在第6圖中示出，並指定為600。
在步驟170中，結構物600被放置於切割設備上，以將晶圓200分割成單獨的晶片700，然後將其放置在晶片連接設備上，以拾取晶片700進行晶片裝配，如第7圖所示。
如果保護帶210的粘結層沒有受到高溫電鍍化學品的不利影響，並且沒有在晶圓週邊分開，則第1圖所示的步驟120、130和140跳過，執行步驟150以在晶圓的前表面203上形成金屬鍍層結構510。
在本發明的另一實施例中，根據第9圖，一種採用化學鍍(化學沉積法)製造半導體裝置的方法，指定為900，該方法包括步驟910，層壓晶片和一個具有紫外線釋放粘合層的保護帶。
步驟910至步驟950與步驟110至步驟150方法相同。在步驟960中，結構500被放置於一個用於晶片切割的特殊卡盤上，並被切割拾取。該夾盤可透射紫外線，並在真空和機械作用下支撐結構500的保護帶210。在夾盤上，步驟970中晶片200被切割成單獨的晶片800。在步驟980中，透過夾盤進行紫外線照射以除去保護帶大部分的粘結力，在步驟990中晶片800被拾取進行晶片裝配。
如果保護帶210的粘結層沒有受到高溫電鍍化學品的不利影響，並且沒有在晶圓週邊分開，則第9圖所示的步驟920、930和940跳過，執行步驟950以在晶片的前側面203上形成金屬鍍層結構510。
在上述的化學鍍(化學沉積法)和切割過程中，由於在晶圓後表面上使用了保護帶，以及在晶片和保護帶交界處使用了保護塗層，從而實現了對晶圓後表面最大程度的保護。然而，在本發明其他的實施例中，保護塗層和相關步驟可以被省略，如果保護帶的粘結層沒有受到高溫電鍍化學品的不利影響，並且沒有在晶圓週邊分開。
在所有公開的實施例中，通過省略保護帶或省略保護塗層除去步驟或同時省略保護帶和保護塗層除去步驟，在晶圓前表面經過化學鍍(化學沉積法)處理後，直接進行晶片切割步驟，來使產量增加。
本發明的方法以對晶圓後表面的保護為例進行描述，然而應該認為其中的步驟100和900可以同樣被用於晶圓前表面的保護。而且步驟100和900可以被用於任何一個晶片濕處理過程。
顯然上述的實施例可以通過很多沒有脫離本發明範圍的方式變通實施。進一步而言，對於某一具體實施例，其各個特徵都包含了專利技術，而不需要與其他特徵關聯使用。而且不同實施例的各個特徵可以被聯合使用。因此，本發明的範圍應當通過權利要求及其合法的等同描述所確定。
200．．．晶片
203．．．晶圓前表面
207．．．晶圓邊緣
210．．．保護帶
250．．．框架
300．．．晶圓基片
220．．．保護塗層
225．．．晶圓週邊
227．．．環狀塗層
400．．．晶圓基片
500．．．晶圓基片
510．．．結構
600．．．結構物
610．．．切割框架
620．．．保護帶
700．．．晶片
800．．．晶片
900．．．方法
結合本發明的以下附圖和詳細的具體實施例，可以看出本發明所公開的各個方面及其技術特徵有別於本領域的現有技術。
第1圖是根據本發明的一種採用化學鍍(化學沉積法)製造半導體裝置的方法的流程圖；第2圖是根據本發明的晶圓附著保護帶和框架的結構示意圖；第3圖是根據本發明的如第2圖所示的晶圓的週邊覆蓋有保護塗層的結構示意圖；第4圖是根據本發明的被保護的晶圓基片在被切割後的結構示意圖；第5圖是根據本發明的如第4圖所示的被保護的晶圓基片在化學鍍(化學沉積法)後的結構示意圖；第6圖是根據本發明的如第5圖所示的保護的晶圓基片與另一個保護帶和框架層壓後的結構示意圖；第7圖是根據本發明的被層壓和切割的被保護晶圓基片的結構示意圖；第8圖是根據本發明的被切割的如第5圖所示的被保護晶圓基片的結構示意圖；第9圖是根據本發明另一實施例的一種採用化學鍍(化學沉積法)製造半導體裝置的方法的流程圖。
100．．．步驟

Claims (9)

  1. 一種採用濕處理法製造半導體裝置的方法，其特徵在於，包括如下步驟：(a)層壓晶圓後表面和保護帶；(b)於步驟a之後在所述的晶圓的前表面進行濕處理；(c)於步驟b之後層壓所述的保護帶和第二保護帶；(d)於步驟c之後切割所述的晶圓；(e)於步驟d之後拾取晶片；其中，於步驟a中在層壓晶圓後表面和保護帶的同時安裝一個框架；以及在晶圓週邊及其與保護帶相鄰的暴露區域上塗抹保護塗層，所述的保護塗層、所述的保護帶和所述的晶圓構成一個被保護的晶圓基片；處理保護塗層；並在步驟b的濕處理步驟之前從保護帶圍繞的保護塗層上切割所述的被保護的晶圓基片。
  2. 如申請專利範圍第1項所述的方法，其特徵在於，所述的保護塗層包括抗蝕物或四氯化物為基礎的化學物。
  3. 如申請專利範圍第1項所述的方法，其特徵在於，所述的晶圓週邊包括從晶圓邊緣向內延伸約1mm-3mm的部分。
  4. 如申請專利範圍第1項所述的方法，其特徵在於，所述的保護帶的鄰接的暴露區域從晶圓邊緣延伸約2mm-6mm。
  5. 如申請專利範圍第1項所述的方法，其特徵在於，所述的濕處理過程包括化學鍍處理。
  6. 一種採用濕處理法製造半導體裝置的方法，其特徵在於，包括以下步驟：(a)利於紫外線放射粘結來層壓晶圓後表面和保護帶；(b)於步驟a之後在所述的晶圓的前表面進行濕處理；(c)於步驟b之後將被保護的晶圓放置在切割裝置上，並切割所述的晶圓；(d)於步驟c之後照射所述的晶圓；(e)於步驟d之後拾取晶片；其中，於步驟a中在層壓晶圓後表面和保護帶的同時安裝一個框架；以及在晶圓週邊及其與保護帶相鄰的暴露區域上塗抹保護塗層，所述的保護塗層、所述的保護帶和所述的晶圓構成一個被保護的晶圓基片；處理保護塗層；並在步驟b的濕處理步驟之前從保護帶圍繞的保護塗層上切割所述的被保護的晶圓基片。
  7. 如申請專利範圍第6項所述的方法，其特徵在於，所述的保護塗層包括抗蝕物或四氯化物為基礎的化學物。
  8. 如申請專利範圍第6項所述的方法，其特徵在於，所述的晶圓週邊包括從晶圓邊緣向內延伸約1mm-3mm的部分。
  9. 如申請專利範圍第6項所述的方法，其特徵在於， 所述的保護帶的鄰接的暴露區域從晶圓邊緣延伸約2mm-6mm。
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