CN101276730B - 一种采用化学镀制造半导体装置的方法 - Google Patents

一种采用化学镀制造半导体装置的方法 Download PDF

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CN101276730B
CN101276730B CN2008100050202A CN200810005020A CN101276730B CN 101276730 B CN101276730 B CN 101276730B CN 2008100050202 A CN2008100050202 A CN 2008100050202A CN 200810005020 A CN200810005020 A CN 200810005020A CN 101276730 B CN101276730 B CN 101276730B
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冯涛
孙明
何约瑟
刘凯
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Chongqing Wanguo Semiconductor Technology Co ltd
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Abstract

本发明公开了一种采用化学镀(化学沉积法)制造半导体装置的方法，该方法包括在湿处理过程中对晶圆后表面的保护。所述的方法包括以下步骤：层压晶圆后表面和具有保护带的框架、在晶圆外围区域和保护带的邻接暴露区域涂抹保护涂层、所述的保护涂层和保护带和晶圆形成一个被保护的晶圆基片，处理框架支撑的保护涂层、从围绕保护涂层的保护带上切割被保护的晶圆基片，湿处理被保护的晶圆基片、层压被保护的晶圆基片和第二保护带、切割晶圆、以及从保护带上拾取晶片。

Description

一种采用化学镀制造半导体装置的方法
技术领域
本发明涉及一种制作半导体装置的方法，特别涉及一种在化学镀(即化学沉积法)及切割镀层晶圆为独立晶片过程中保护晶圆后表面的方法。
背景技术
化学镀镍和化学沉积法掺杂金方法被广泛应用于在晶圆前表面的铝合金衬垫上沉积镍/金涂层，而不需要掩盖物或电镀电流。这是一个需要付出成本的有效途径，为铜电线焊接提供一个坚硬的外层，为回形焊接和芯片封装提供一个潮湿的焊接面和扩散屏障。
在化学镀镍过程中，晶圆的后表面需要覆盖一个绝缘层以避免镍电镀，通常在该区域的附着力较低。多余的电镀浪费镍并且减少电镀溶液的使用寿命。此外，若引入的晶圆在其后表面有金属层，如银层，将会产生对后表面金属的腐蚀以及对电镀化学品的污染。抗蚀层通常被用于保护晶圆的后表面。然而，这种方法必须包含一个抗蚀物涂抹过程和一个抗蚀物脱模过程。后一过程可能包括额外的清洁步骤以除去残余的抗蚀物。这一复杂过程降低了产品的生产量，并且提高了总成本。
在另一种方法中，一个暂时性保护胶带在化学镀(化学沉积法)前被用于晶圆的后表面。然而，在化学腐蚀下这种带子的黏合性通常很差，并且可能导致晶圆周围区域中保护带严重分解的问题，进而给电镀化学品带来污染。加之这些使用和除去保护带的额外步骤将会增加成本，并且增加晶圆，特别是相对较薄的晶圆发生爆裂或开裂的机会。
因此本技术领域需要一种采用化学镀(化学沉积法)来制造半导体装置的方法，以克服先前技术的不足和缺陷。该方法进一步的提供了一个简单的生产流程，该流程具有较好的保护效果、高生产量和低成本。
发明内容
根据本发明的一个方面，一种采用化学镀(化学沉积法)来制造半导体装置的方法包括以下步骤：
层压晶圆后表面和一个具有保护带的框架；
在晶圆外围区域与保护带邻接暴露区域上涂抹保护涂层；
保护涂层和晶圆形成一个被保护的晶圆基片；
加工被框架支撑的保护涂层以增加保护涂层的粘结力；
从保护带围绕的保护涂层上切割被保护的晶圆基片；
化学镀(化学沉积法)被保护的晶圆基片；
层压被保护的晶圆基片具有保护带的一侧和第二个保护带；
切割晶圆变成单独的晶片；
从用于固定晶片的保护带上拾取晶片。
根据本发明的另一方面，一种采用化学镀(化学沉积法)来制造半导体装置的方法包括以下步骤：
采用紫外线释放粘结剂来层压晶圆后表面和一个具有保护带的框架；
在晶圆外围区域及保护带邻接暴露区域上涂抹保护涂层；
保护涂层和晶片形成一个被保护的晶圆基片；
加工框架、保护涂层和被保护的晶圆基片以增加保护涂层的粘结力；
从保护带围绕的保护涂层上切割被保护的晶圆基片；
化学镀(化学沉积法)被保护的晶圆基片；
将被保护的晶圆基片装载在一个除去保护带支撑的切割设备上；
切割被保护的晶圆基片变成单独的晶片；
紫外线照射保护带以减小粘结力；
从用于固定晶片的保护带上拾取晶片。
根据本发明的另一方面，如果保护带的粘结层在湿处理过程中可以抵抗化学腐蚀，则上述方法中的涂抹保护涂层步骤和加工步骤可以省略。如上所述，则也可以直接在保护带上切割晶圆。
以上大略描述了本发明的较重要的技术特征，从而使其后的详细叙述可以被更好的理解，使本发明对本技术领域的贡献可以被更好的认可。当然，本发明的其他技术特征将会在以下详细描述并形成相应的从属权利要求。
在阐述本发明至少一个实施例之前，本发明应该被理解为不尽限于其说明书及附图所公开的功能组成和这些功能组成经排列组合的范围。本发明可以被其他实施例实现，并且可以以多种方式实施。同样地，在此所用的措辞和术语连同摘要应被理解为描述目的，而不应该被理解为限制目的。
同样的，本领域的技术人员利用本发明所公开的原理为基础可以以其他方式实现本发明的目的。因此，权利要求应被认为包括其范围内的这些等同的结构，应为它们并未脱离本发明的精神和范围。
附图说明
结合本发明的以下附图和详细的具体实施例，可以看出本发明所公开的各个方面及其技术特征有别于本领域的现有技术。
图1是根据本发明的一种采用化学镀(化学沉积法)制造半导体装置的方法的流程图；
图2是根据本发明的晶圆附着保护带和框架的结构示意图；
图3是根据本发明的如图2所示的晶圆的外围覆盖有保护涂层的结构示意图；
图4是根据本发明的被保护的晶圆基片在被切割后的结构示意图；
图5是根据本发明的如图4所示的被保护的晶圆基片在化学镀(化学沉积法)后的结构示意图；
图6是根据本发明的如图5所示的保护的晶圆基片与另一个保护带和框架层压后的结构示意图；
图7是根据本发明的被层压和切割的被保护晶圆基片的结构示意图；
图8是根据本发明的被切割的如图5所示的被保护晶圆基片的结构示意图；
图9是根据本发明另一实施例的一种采用化学镀(化学沉积法)制造半导体装置的方法的流程图。
具体实施方式
本发明参考说明书附图进行详细的阐述，提供说明性的例子以使得本领域的技术人员能实施本发明。特别地，以下的数字和例子不意味着限定本发明的范围。本发明的某些元件能够部分或全部采用现有零件实现，只有那些理解本发明所必需的那些现有零件会被描述，其他的现有零件的详细描述将被省略，以使本发明不会描述模糊。进一步而言，本发明包括根据说明书附图而得到的现有技术或未来技术的等同零件。
本发明公开了一种采用化学镀(化学沉积法)制造半导体装置的方法，该方法利用保护带来保护晶圆后表面区域和切割晶片。为了在化学镀(化学沉积法)过程中，实现更好的对晶圆后表面的保护，在晶圆外围涂抹有涂层。
如图1至图8所示，指定100代替采用化学镀(化学沉积法)制造半导体装置，包括步骤110，即，晶片200的后表面205层压在保护带210上。保护带210包括一个具有抗蚀层的切割带，可以在化学镀(化学沉积法)过程中抗化学和高温腐蚀，例如，根据普林斯顿大学的研究，HTCR200-S带可用于电镀铝工艺。
保护带210具有框架250的支撑，在步骤120中，保护涂层220被涂抹在晶片200的外围部分225，并从晶圆边缘207向内延伸约1mm-3mm，从晶圆边缘207向外延伸2mm-6mm至保护带210的暴露区域230。保护涂层220形成了一个环状涂层227覆盖在晶圆外围部分225和保护带210的暴露区域230之间的边界。保护涂层220包括一种过铬酸盐(percholoroethylene)和轻石油醚(VM&P naptha)的合成物，该合成物可从普林斯顿技术大学得知，其美国商品名为Micro301S。可选择地，保护涂层也可包括可承受化学镀(化学沉积法)化学腐蚀的抗蚀物。
指定为300的被保护的晶圆基片连同框架250和保护带210一起在烤炉中被加工，以凝固并增加保护涂层220的粘合力。
环形热压缩和切割单元具有一个比晶圆200半径大2mm-6mm的半径(图中未示出)，该单元被用于提高保护涂层220和晶圆外围225外侧的保护带210间的粘结力，并且被用于在步骤140中切割被保护的晶圆。得到的被保护的晶圆基片在图4中示出，并指定为400。
被保护的晶圆基片400在步骤150中被化学镀(化学沉积法)，以在晶圆前表面203形成镀有金属的结构510。得到的具有镀层的被保护的晶圆基片在图5中示出，并指定为500。
在步骤160中，晶圆基片500被层压进第二个保护带620。保护带620最好具有比保护带210更强的粘结力。切割框架610被用于支撑第二个保护带620。得到的结构物在图6中示出，并指定为600。
在步骤170中，结构物600被放置于切割设备上，以将晶圆200分割成单独的晶片700，然后将其放置在晶片连接设备上，以拾取晶片700进行晶片装配，如图7所示。
如果保护带210的粘结层没有受到高温电镀化学品的不利影响，并且没有在晶圆外围分开，则图1所示的步骤120、130和140跳过，执行步骤150以在晶圆的前表面203上形成金属镀层结构510。
在本发明的另一实施例中，根据图9，一种采用化学镀(化学沉积法)制造半导体装置的方法，指定为900，该方法包括步骤910，层压晶片和一个具有紫外线释放粘合层的保护带。
步骤910至步骤950与步骤110至步骤150方法相同。在步骤960中，结构500被放置于一个用于晶片切割的特殊卡盘上，并被切割拾取。该夹盘可透射紫外线，并在真空和机械作用下支撑结构500的保护带210。在夹盘上，步骤970中晶片200被切割成单独的晶片800。在步骤980中，透过夹盘进行紫外线照射以除去保护带大部分的粘结力，在步骤990中晶片800被拾取进行晶片装配。
如果保护带210的粘结层没有受到高温电镀化学品的不利影响，并且没有在晶圆外围分开，则图9所示的步骤920、930和940跳过，执行步骤950以在晶片的前侧面203上形成金属镀层结构510。
在上述的化学镀(化学沉积法)和切割过程中，由于在晶圆后表面上使用了保护带，以及在晶片和保护带交界处使用了保护涂层，从而实现了对晶圆后表面最大程度的保护。然而，在本发明其他的实施例中，保护涂层和相关步骤可以被省略，如果保护带的粘结层没有受到高温电镀化学品的不利影响，并且没有在晶圆外围分开。
在所有公开的实施例中，通过省略保护带或省略保护涂层除去步骤或同时省略保护带和保护涂层除去步骤，在晶圆前表面经过化学镀(化学沉积法)处理后，直接进行晶片切割步骤，来使产量增加。
本发明的方法以对晶圆后表面的保护为例进行描述，然而应该认为其中的步骤100和900可以同样被用于晶圆前表面的保护。而且步骤100和900可以被用于任何一个晶片湿处理过程。
显然上述的实施例可以通过很多没有脱离本发明范围的方式变通实施。进一步而言，对于某一具体实施例，其各个特征都包含了专利技术，而不需要与其他特征关联使用。而且不同实施例的各个特征可以被联合使用。因此，本发明的范围应当通过权利要求及其合法的等同描述所确定。

Claims (13)

1.一种采用化学镀法制造半导体装置的方法，其特征在于，包括以下步骤：
层压晶圆后表面和保护带；
化学镀所述的晶圆；
层压所述的保护带和第二保护带；
切割所述的晶圆；
拾取晶片。
2.如权利要求1所述的方法，其特征在于，所述层压晶圆后表面和保护带的步骤还包括如下步骤：
在层压晶圆后表面和保护带的同时安装一个框架；
在晶圆外围及保护带上与晶圆外围相邻的暴露区域上涂抹保护涂层，所述的保护涂层、所述的保护带和所述的晶圆构成一个被保护的晶圆基片；
被保护的晶圆基片连同框架和保护带一起在烤炉中被加工，以凝固并增加保护涂层的粘合力；
从保护带中围绕保护涂层的区域上切割所述的被保护的晶圆基片。
3.如权利要求1所述的方法，其特征在于，所述的保护带包括一个切割带。
4.如权利要求2所述的方法，其特征在于，所述的保护涂层包括抗蚀物或四氯化物为基础的化学物。
5.如权利要求2所述的方法，其特征在于，所述的晶圆外围包括从晶圆边缘向内延伸1mm-3mm的部分。
6.如权利要求2所述的方法，其特征在于，所述的保护带上的暴露区域从晶圆边缘向外延伸2mm-6mm。
7.一种采用化学镀法制造半导体装置的方法，其特征在于，包括以下步骤：
利用紫外线放射粘结剂来层压晶圆后表面和保护带；
化学镀所述的晶圆；
将被保护的晶圆放置在切割装置上；
切割所述的晶圆；
紫外线照射所述的晶圆；
拾取晶片。
8.如权利要求7所述的方法，其特征在于，所述层压晶圆后表面和保护带的步骤还包括以下步骤：
在层压晶圆后表面和保护带的同时安装一个框架；
在晶圆外围及保护带上与晶圆外围相邻的暴露区域上涂抹保护涂层，所述的保护涂层、所述的保护带和所述的晶圆构成一个被保护的晶圆基片；
被保护的晶圆基片连同框架和保护带一起在烤炉中被加工，以凝固并增加保护涂层的粘附力；
从保护带中围绕保护涂层的区域上切割所述的被保护的晶圆基片。
9.如权利要求7所述的方法，其特征在于，所述的保护带包括切割带。
10.如权利要求8所述的方法，其特征在于，所述的保护涂层包括抗蚀物或四氯化物为基础的化学物。
11.如权利要求10所述的方法，其特征在于，所述的晶圆外围包括从晶圆边缘向内延伸1mm-3mm的部分。
12.如权利要求11所述的方法，其特征在于，所述的保护带上的暴露区域从晶圆边缘向外延伸2mm-6mm。
13.如权利要求7所述的方法，其特征在于，所述的切割装置包括一个可透射紫外线的卡盘。
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