JP2006165527A5 - - Google Patents

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JP2006165527A5
JP2006165527A5 JP2005325364A JP2005325364A JP2006165527A5 JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5
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field effect
effect transistor
source
electrode
gate electrode
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JP2005325364A
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JP5118810B2 (ja
JP2006165527A (ja
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JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Active JP5118810B2 (ja)

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JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 true JP2006165527A5 (ko) 2008-12-25
JP5118810B2 JP5118810B2 (ja) 2013-01-16

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Cited By (2)

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US8400187B2 (en) 2009-10-16 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film

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US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI622175B (zh) * 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
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US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR101772377B1 (ko) 2008-09-12 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101545460B1 (ko) 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
WO2010029859A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI478356B (zh) 2008-10-31 2015-03-21 Semiconductor Energy Lab 半導體裝置及其製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI589006B (zh) 2008-11-07 2017-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
KR101810699B1 (ko) * 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
EP3236504A1 (en) 2009-06-30 2017-10-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Nltテクノロジー株式会社 薄膜デバイス及びその製造方法
KR102157249B1 (ko) * 2009-09-16 2020-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
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CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
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CN102668028B (zh) 2009-11-28 2015-09-02 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US8400187B2 (en) 2009-10-16 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device

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