JP2006148088A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2006148088A
JP2006148088A JP2005307239A JP2005307239A JP2006148088A JP 2006148088 A JP2006148088 A JP 2006148088A JP 2005307239 A JP2005307239 A JP 2005307239A JP 2005307239 A JP2005307239 A JP 2005307239A JP 2006148088 A JP2006148088 A JP 2006148088A
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JP
Japan
Prior art keywords
layer
field effect
conductive
conductive layer
organic compound
Prior art date
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Withdrawn
Application number
JP2005307239A
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English (en)
Japanese (ja)
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JP2006148088A5 (https=
Inventor
Hiroko Abe
寛子 安部
Yuji Iwaki
裕司 岩城
Mikio Yugawa
幹央 湯川
Shunpei Yamazaki
舜平 山崎
Yasuyuki Arai
康行 荒井
Yasuko Watanabe
康子 渡辺
Yoshitaka Moriya
芳隆 守屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005307239A priority Critical patent/JP2006148088A/ja
Publication of JP2006148088A publication Critical patent/JP2006148088A/ja
Publication of JP2006148088A5 publication Critical patent/JP2006148088A5/ja
Withdrawn legal-status Critical Current

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  • Thin Film Transistor (AREA)
JP2005307239A 2004-10-22 2005-10-21 半導体装置 Withdrawn JP2006148088A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005307239A JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004308839 2004-10-22
JP2005307239A JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011021718A Division JP5303588B2 (ja) 2004-10-22 2011-02-03 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006148088A true JP2006148088A (ja) 2006-06-08
JP2006148088A5 JP2006148088A5 (https=) 2008-08-28

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ID=36627363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005307239A Withdrawn JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Country Status (1)

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JP (1) JP2006148088A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004893A (ja) * 2006-06-26 2008-01-10 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259478A (ja) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> トンネル素子
JPH0258264A (ja) * 1988-08-23 1990-02-27 Matsushita Electric Ind Co Ltd メモリー素子
JPH11112060A (ja) * 1997-09-30 1999-04-23 Toshiba Corp 電子移動型素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2002231899A (ja) * 2001-02-02 2002-08-16 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2003529223A (ja) * 2000-03-28 2003-09-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ プログラム可能な記憶素子を有する集積回路
JP2004509458A (ja) * 2000-09-13 2004-03-25 シーメンス　アクチエンゲゼルシヤフト 有機データメモリ、有機データメモリによるｉｄタグ（ｒｆｉｄタグ）、および有機データメモリの使用法
JP2004185755A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
WO2004073079A1 (ja) * 2003-02-14 2004-08-26 Fuji Electric Holdings Co., Ltd. スイッチング素子

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259478A (ja) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> トンネル素子
JPH0258264A (ja) * 1988-08-23 1990-02-27 Matsushita Electric Ind Co Ltd メモリー素子
JPH11112060A (ja) * 1997-09-30 1999-04-23 Toshiba Corp 電子移動型素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
JP2003529223A (ja) * 2000-03-28 2003-09-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ プログラム可能な記憶素子を有する集積回路
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2004509458A (ja) * 2000-09-13 2004-03-25 シーメンス　アクチエンゲゼルシヤフト 有機データメモリ、有機データメモリによるｉｄタグ（ｒｆｉｄタグ）、および有機データメモリの使用法
JP2002231899A (ja) * 2001-02-02 2002-08-16 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2004185755A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
WO2004073079A1 (ja) * 2003-02-14 2004-08-26 Fuji Electric Holdings Co., Ltd. スイッチング素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004893A (ja) * 2006-06-26 2008-01-10 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8432018B2 (en) 2006-06-26 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US8648439B2 (en) 2006-06-26 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
KR101517943B1 (ko) 2006-06-26 2015-05-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치 제조방법

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