JP2006148088A5 - - Google Patents

Download PDF

Info

Publication number
JP2006148088A5
JP2006148088A5 JP2005307239A JP2005307239A JP2006148088A5 JP 2006148088 A5 JP2006148088 A5 JP 2006148088A5 JP 2005307239 A JP2005307239 A JP 2005307239A JP 2005307239 A JP2005307239 A JP 2005307239A JP 2006148088 A5 JP2006148088 A5 JP 2006148088A5
Authority
JP
Japan
Prior art keywords
field effect
effect transistors
layer
pair
conductive layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005307239A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006148088A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005307239A priority Critical patent/JP2006148088A/ja
Priority claimed from JP2005307239A external-priority patent/JP2006148088A/ja
Publication of JP2006148088A publication Critical patent/JP2006148088A/ja
Publication of JP2006148088A5 publication Critical patent/JP2006148088A5/ja
Withdrawn legal-status Critical Current

Links

JP2005307239A 2004-10-22 2005-10-21 半導体装置 Withdrawn JP2006148088A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005307239A JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004308839 2004-10-22
JP2005307239A JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011021718A Division JP5303588B2 (ja) 2004-10-22 2011-02-03 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006148088A JP2006148088A (ja) 2006-06-08
JP2006148088A5 true JP2006148088A5 (https=) 2008-08-28

Family

ID=36627363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005307239A Withdrawn JP2006148088A (ja) 2004-10-22 2005-10-21 半導体装置

Country Status (1)

Country Link
JP (1) JP2006148088A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259478A (ja) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> トンネル素子
JPH0258264A (ja) * 1988-08-23 1990-02-27 Matsushita Electric Ind Co Ltd メモリー素子
JP3761300B2 (ja) * 1997-09-30 2006-03-29 株式会社東芝 シフトレジスター型記憶素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
CN1181546C (zh) * 2000-03-28 2004-12-22 皇家菲利浦电子有限公司 带可编程存储器单元的集成电路
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
JP3846202B2 (ja) * 2001-02-02 2006-11-15 ソニー株式会社 半導体不揮発性記憶装置
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2004185755A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
EP1594176B1 (en) * 2003-02-14 2010-05-19 Fuji Electric Holdings Co., Ltd. Switching device

Similar Documents

Publication Publication Date Title
Baeg et al. Remarkable enhancement of hole transport in top‐gated N‐type polymer field‐effect transistors by a high‐k dielectric for ambipolar electronic circuits
Li et al. High‐performance nonvolatile organic field‐effect transistor memory based on organic semiconductor Heterostructures of Pentacene/P13/Pentacene as both charge transport and trapping layers
Takeda et al. Fabrication of ultra-thin printed organic TFT CMOS logic circuits optimized for low-voltage wearable sensor applications
Herlogsson et al. Polyelectrolyte‐gated organic complementary circuits operating at low power and voltage
Kumar et al. Organic thin film transistors: structures, models, materials, fabrication, and applications: a review
Yu et al. Vertical organic field-effect transistors for integrated optoelectronic applications
Kang et al. Printed, flexible, organic nano‐floating‐gate memory: Effects of metal nanoparticles and blocking dielectrics on memory characteristics
Sekitani et al. Printed nonvolatile memory for a sheet-type communication system
Wang et al. Complementary Symmetry Silicon Nanowire Logic: Power‐Efficient Inverters with Gain
Chen et al. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors
Lee et al. High‐Mobility Air‐Stable Solution‐Shear‐Processed n‐Channel Organic Transistors Based on Core‐Chlorinated Naphthalene Diimides
Kang et al. Synergistic high charge-storage capacity for multi-level flexible organic flash memory
JP2006148080A5 (https=)
KR102513332B1 (ko) 가요성 표시 패널
Kim et al. High performance and stable flexible memory thin-film transistors using In–Ga–Zn–O channel and ZnO charge-trap layers on poly (ethylene naphthalate) substrate
TWI256072B (en) Semiconductor integrated circuits with stacked node contact structures and methods of fabricating such devices
Lee et al. DNA-base guanine as hydrogen getter and charge-trapping layer embedded in oxide dielectrics for inorganic and organic field-effect transistors
CN103151460B (zh) 晶体管、显示装置和电子设备
Kim et al. Organic field-effect transistors using perylene
CN101064361B (zh) 存储元件以及半导体装置
Zhou et al. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids
JP2007201437A5 (https=)
JP2008277791A5 (https=)
US9876066B2 (en) Device and structure and method for forming the same
Rockele et al. Integrated tin monoxide p-channel thin-film transistors for digital circuit applications