JP2006148086A - Laser irradiation method, laser irradiation apparatus, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve productivity in laser annealing using a CW laser or a pseudo CW laser, which is inferior compared with that in the case of using an excimer laser. <P>SOLUTION: Laser light is used as a fundamental laser without being transmitted through a nonlinear optical element, and pulse laser light with high intensity and a high repetition frequency is irradiated to a semiconductor thin film, so that laser annealing is performed. Since the nonlinear optical element is not used, and the laser light is not converted into a higher harmonic, a laser oscillator having a large output can be used for a laser annealing method. Accordingly, since the width of a region of crystals having a large grain size formed in a single scan is expanded, productivity is remarkably improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a laser irradiation apparatus for irradiating an object to be processed with laser light, a method for manufacturing a semiconductor film having a crystal structure using the apparatus, and a method for manufacturing a semiconductor device. In addition, the present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a photovoltaic element (such as a photosensor or a solar cell). For example, the present invention relates to an electronic apparatus in which an electro-optical device typified by a liquid crystal display panel, a light-emitting display device having an organic light-emitting element, a sensor device such as a line sensor, and a memory device such as an SRAM are mounted as components.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

  In recent years, image display devices and image sensors have been increased in size and pixels have been increased in density (high definition), and a semiconductor thin film capable of following higher-speed driving has been demanded. In order to reduce the weight and cost, the thin film transistor is applied not only to the switching element of the image display apparatus but also to the driver element around the display area.

  Therefore, methods for forming a semiconductor thin film having a crystal structure and improving electric characteristics such as field effect mobility (also referred to as mobility), for example, a solid phase growth method and a laser annealing method have been studied.

  In the solid phase growth method, an amorphous silicon thin film is formed on a substrate and heated to form a polycrystalline silicon thin film, and heat treatment is mainly performed at a temperature of about 600 ° C. to 1000 ° C. for a long time. There is a need for an expensive quartz substrate to withstand.

From the viewpoint of cost, a glass substrate is considered promising as a substrate rather than a quartz substrate or a single crystal semiconductor substrate. Since glass substrates are inferior in heat resistance and easily deformed by heat, when a TFT using a polycrystalline semiconductor film is formed on a glass substrate, a laser is used to crystallize the semiconductor film in order to avoid thermal deformation of the glass substrate. An annealing method is suitable.

  The characteristics of the laser annealing method are that the processing time can be greatly shortened compared to the annealing method using radiation heating or conduction heating, and the semiconductor substrate or semiconductor film is selectively heated to cause almost no thermal damage to the substrate. There are things not to give.

  Laser oscillators used in laser annealing are roughly classified into two types, pulse oscillation and continuous oscillation, depending on the oscillation method. In laser annealing, laser light (also referred to as a laser beam) oscillated from a pulsed excimer laser is often used. The excimer laser has an advantage that it has a large output and can be repeatedly irradiated at a high frequency.

  Further, laser light oscillated from an excimer laser has an advantage of a high absorption coefficient with respect to a silicon thin film often used as a semiconductor thin film.

  For example, when irradiating a laser beam, the laser beam is shaped with an optical system (such as a beam homogenizer) so that the shape of the laser beam on the irradiation surface is linear, and the irradiation position of the laser beam is relative to the irradiation surface. Move and irradiate. This method is industrially excellent because it can crystallize an amorphous silicon film having a large area at a time and has high productivity. Hereinafter, the laser beam having a linear shape on the irradiated surface is referred to as a linear beam.

  The conventional laser annealing method using laser light oscillated from a pulsed excimer laser also has some problems to be solved. For example, the uniformity of crystal grain size and crystallinity is poor, and the TFT The problem is that the physical characteristics are not stable.

Therefore, as one of the methods for solving these problems, a continuous oscillation laser oscillator (hereinafter referred to as a CW laser) such as an Ar laser or a YVO ₄ laser, or a repetitive frequency of 10 MHz or more is very high. A method using a pulsed laser oscillator (hereinafter referred to as a pseudo CW laser) can be used.

  It has been found that the use of laser light from a CW laser or pseudo CW laser increases the grain size of crystals formed in a semiconductor film. In general, the polycrystalline silicon thin film has higher electrical characteristics such as mobility as the crystal grain size is larger. In addition, when the crystal grain size of the semiconductor film is increased, the number of grain boundaries located in the channel formation region of the TFT formed using the semiconductor film is reduced, so that the mobility is increased, which leads to the development of a higher performance device. Available. Hereinafter, such a crystal having a large crystal grain size is referred to as a large crystal grain.

  However, when a CW laser or pseudo CW laser whose laser medium is solid is applied, the wavelength range of the fundamental wave is from red to the near infrared range, and the absorption efficiency in the semiconductor film is extremely low. Incidentally, laser light with good absorption efficiency into the semiconductor film is laser light having a visible or ultraviolet wavelength.

  Accordingly, when a CW laser or a pseudo CW laser is used for the laser annealing method, the wavelength is converted into a harmonic wave below the visible range using a nonlinear optical element. For example, in a method of converting a near-infrared fundamental wave that easily obtains a large output into a green laser beam that is the second harmonic, it is considered that the conversion efficiency is the highest.

  Harmonics are obtained by making a fundamental wave oscillated from a laser medium enter a nonlinear optical element. However, when the output of the laser increases, there is a problem that the nonlinear optical element is damaged due to nonlinear optical effects such as multiphoton absorption, leading to breakdown. Therefore, the CW laser in the visible range currently produced is about 15 W at the maximum due to the problem of nonlinear optical elements.

  Further, when laser annealing is performed using a CW laser or a pseudo CW laser, productivity is worse than when an excimer laser is used, and further improvement in productivity is necessary. For example, when laser annealing is performed by shaping a 10 W 532 nm CW laser into a linear shape having a longitudinal direction of about 300 μm and a short side direction of about 10 μm, the width of the large grain crystal region formed by a single scan is 200 μm. It will be about. For this reason, in order to crystallize the entire surface of a rectangular semiconductor film having a side of several hundred mm or more used in the mass production process, it is necessary to repeat scanning of the beam spot several thousand times.

  Therefore, the present invention is characterized in that laser annealing is performed by irradiating a semiconductor thin film with laser light having a high intensity and a high repetition frequency while leaving the laser light as a fundamental wave without passing through the nonlinear optical element. To do. One feature of the present invention is that the repetition frequency of the laser used in the present invention is 10 MHz or more.

High intensity means having a high peak output per unit area per unit time, and the range of the peak output of laser light in the present invention is 1 GW / cm ^{2 to 1} TW / cm ² . .

A fundamental wave having a wavelength of about 1 μm is not absorbed much even when irradiated on a semiconductor thin film, and the absorption efficiency is low. However, the present inventors have set the pulse width in the picosecond range or the femtosecond range ( ^10-15 seconds). It has been found that a high-intensity laser beam can be obtained with a fundamental wave emitted from a pulse laser, and a non-linear optical effect (multiphoton absorption) is generated, which can be absorbed by a semiconductor thin film.

  Since the present invention does not use a nonlinear optical element and does not convert to a harmonic, a laser oscillator having an output larger than 15 W, for example, 40 W can be used for the laser annealing method. Accordingly, the width of the large grain crystal region formed by one scan can be increased, and the productivity can be significantly improved.

  In addition, since the present invention causes multiphoton absorption to melt, the semiconductor thin film can be thin, for example, the semiconductor thin film can absorb high-intensity laser light even if it is 100 nm or less. Therefore, the film formation time of the semiconductor thin film can be shortened by reducing the film thickness of the semiconductor thin film.

The configuration of the invention relating to the laser irradiation method disclosed in this specification is
A first laser beam, which is a fundamental wave emitted from a laser oscillator having a laser repetition frequency of 10 MHz or more, is shaped using a condenser lens to form a second laser beam, and the irradiation surface is irradiated with the second laser beam. Then, the laser irradiation method is characterized in that the second laser beam is moved relative to the irradiation surface.

In addition, the configuration of the invention relating to another laser irradiation method is as follows:
A first laser beam, which is a fundamental wave emitted from a laser oscillator having a laser repetition frequency of 10 MHz or more, is shaped using a condenser lens to form a second laser beam,
Irradiating the irradiated body with the second laser beam to cause multiphoton absorption and melting,
In the laser irradiation method, the second laser beam is moved relative to the irradiation object.

  In each of the above structures, the first laser beam oscillates with a pulse width of 1 femtosecond or more and 10 picoseconds or less. By setting the pulse width in the range of 1 femtosecond or more and 10 picoseconds or less, high intensity sufficient to cause multiphoton absorption can be obtained. Multiphoton absorption does not occur in a laser beam having a pulse width of several tens of picoseconds longer than 10 picoseconds. Further, when an experiment was performed in which the semiconductor film was heated using a laser beam having a pulse width of 150 femtoseconds, it was confirmed that the semiconductor film was heated. From this, it is considered that multiphoton absorption was caused.

In addition, a laser irradiation apparatus constituted by a laser oscillator and an optical member that does not incorporate a nonlinear optical element is also one aspect of the present invention, and its configuration is
A laser oscillator that emits a fundamental wave, an optical member that processes a laser beam emitted from the laser oscillator into a long laser beam on an irradiation surface, and a means for moving the irradiation surface relative to the laser beam; A laser irradiation apparatus characterized by comprising:

  Another configuration includes a laser oscillator that emits a fundamental wave and a condensing lens that shapes a laser beam emitted from the laser oscillator, and the laser beam is projected onto an irradiation surface by the condensing lens. A laser irradiation apparatus having an irradiation mechanism and means for moving the irradiation surface relative to the laser beam.

  Since the above-described laser irradiation apparatus of the present invention does not include a nonlinear optical element, the cost for manufacturing the laser irradiation apparatus can be reduced accordingly.

Normally, when the energy per photon is smaller than the energy gap of the semiconductor film, the photon is not absorbed by the semiconductor film. For this reason, conventionally, as described above, the fundamental wave is converted into a harmonic using a nonlinear optical element to increase the energy per photon. When n-order harmonics of wavelength λ are used, energy E per photon is Planck's constant

, And can be expressed by the following equation using the speed of light c.

For example, since light having a wavelength of 1064 nm corresponds to energy of 1.17 eV, absorption does not occur when an amorphous silicon film having an energy band gap of 1.6 to 1.8 eV is used as the semiconductor film. Since light having a wavelength of 532 nm corresponds to energy of 2.34 eV, absorption also occurs in the amorphous silicon film.

  However, when a high-intensity laser beam is used, a high electromagnetic field is generated in the material irradiated with the laser beam, and a nonlinear optical effect (multiphoton absorption) occurs. With multiphoton absorption, even when the energy per photon is smaller than the energy band gap of the semiconductor film, photons can be absorbed in multiple stages at the same time and can be absorbed without passing through.

  For example, when an amorphous silicon film is irradiated with a laser beam having a wavelength of 1064 nm, the energy per photon is 1.17 eV, so that absorption into the amorphous silicon film does not occur, but it is simultaneously 2 due to multiphoton absorption. When photon absorption occurs, it becomes 2.34 eV, which is the same as the second harmonic, and light absorption occurs.

As a laser capable of obtaining an intensity high enough to cause multiphoton absorption, there is a short pulse laser whose pulse width unit is picosecond or femtosecond. Examples of the pulse laser that can be used include Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , and GdVO _4. , Ti, Ho, Er and other dopants.

  In the above-described configuration, the condensing lens is two convex cylindrical lenses. Further, the optical member is not limited to a refractive optical member typified by a condensing lens, and an optical member may be appropriately disposed on the path from the laser oscillator to the irradiation surface. Other optical members that can be used in the present invention include a reflective optical member such as a mirror and a diffracted light member such as a diffraction grating.

  In the present invention, a pulsed laser having a repetition rate of 10 MHz or more is used when the amorphous silicon film is used as the semiconductor film. The amorphous silicon film absorbs the laser beam and is melted and then cooled by thermal diffusion. This is because the time until recrystallization is about 100 nanoseconds. If the laser beam is irradiated again at the same location within the time of 100 nanoseconds, the molten state can be maintained. Therefore, if it is a pulse laser having a repetition frequency of 10 MHz or more, it is considered in the same way as a CW laser. Such a laser can be referred to as a pseudo CW laser.

In addition, it is also one of the present invention to manufacture a semiconductor device using a laser annealing method of irradiating a fundamental wave, and a configuration related to the manufacturing method is as follows.
A step of processing a laser beam, which is a fundamental wave, into a long laser beam on the surface of the semiconductor and irradiating the semiconductor surface while moving the surface of the semiconductor relative to the long laser beam to crystallize the semiconductor. A method for manufacturing a semiconductor device.

In addition, an impurity element added to a semiconductor can be activated using a laser annealing method of irradiating a fundamental wave, and a structure related to a method for manufacturing another semiconductor device is as follows:
A step of forming an impurity region in the semiconductor, and processing a laser beam, which is a fundamental wave, into a long beam on the surface of the semiconductor, irradiating the semiconductor surface while moving relative to the long beam, And a step of activating an impurity region formed in the semiconductor.

In addition, a laser annealing method of irradiating a fundamental wave to a semiconductor layer provided over a conductive layer through an insulating film can be used, and a structure related to a method for manufacturing another semiconductor device is as follows:
Forming a conductive layer on the glass substrate; forming an insulating layer covering the conductive layer; forming a semiconductor layer on the insulating layer; and applying a laser beam, which is a fundamental wave, to the surface of the semiconductor layer And a step of irradiating the surface of the semiconductor layer while moving the surface of the semiconductor layer relative to the long beam.

  Note that the laser annealing method in this specification refers to a technique for recrystallizing a damaged layer or an amorphous layer formed on a semiconductor substrate or a semiconductor film, or crystallizing an amorphous semiconductor film formed on a substrate. Refers to technology. Moreover, the technique applied to planarization and surface modification of a semiconductor substrate or a semiconductor film is also included.

In this specification, “multi-photon absorption” means simultaneous absorption of two or more photons, and a reactive electronic excitation that cannot be reached energetically by absorption of one photon of the same energy as the two photons. It means something that reaches a state. “Simultaneous” means two events that occur within a time of 10 ⁻¹⁴ seconds or less. In addition, the “electronic excited state” is an electronic state of a molecule at an energy higher than the electronic ground state of the molecule, and means a state that is achieved by absorption of electromagnetic radiation and has a lifetime longer than 10 ⁻¹³ seconds.

  According to the present invention, it is possible to obtain a laser beam having a very large output, for example, one having energy more than twice that of a harmonic without requiring a nonlinear optical element for wavelength conversion. Accordingly, the crystal grain size of the semiconductor film can be increased, and the number of grain boundaries located in the channel formation region of the TFT formed using the semiconductor film is reduced, so that the mobility is increased and a higher performance device is obtained. Can be used for development of

  In addition, since nonlinear optical elements are easily altered, there is a drawback that the maintenance-free state, which is an advantage of solid-state lasers, cannot be maintained for a long time, but the present invention does not use nonlinear optical elements, so that the disadvantages are overcome. Can do. That is, the present invention improves the stability and reliability of the laser irradiation apparatus itself.

  Embodiments of the present invention will be described below. However, the present invention can be implemented in many different modes, and various changes can be made in form and details without departing from the spirit and scope of the present invention.

(Embodiment 1)
FIG. 1 is a perspective view showing an example of a laser irradiation apparatus of the present invention.

As the laser oscillator 101 illustrated in FIG. 1, a laser oscillator of a laser (also referred to as a femtosecond laser) that oscillates in the femtosecond (10 ⁻¹⁵ second) range is used. As the laser oscillator, crystals such as Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , GdVO ₄ , Nd, Yb, Cr And a laser to which a dopant such as Ti, Ho, and Er is added. Note that the laser oscillator 101 does not incorporate a nonlinear optical element, and emits a fundamental wave of a laser beam. Although the pulse laser oscillator 101 does not include a nonlinear optical element for converting light oscillated from the laser medium into a harmonic, the intensity of light sufficient to cause a nonlinear optical effect (multiphoton absorption) sufficiently in the semiconductor film. It is what you have.

  First, the laser beam emitted from the laser oscillator 101 passes through the slit 102. The slit 102 can block a weak energy portion of the laser beam, and can adjust the length of the laser beam in the longitudinal direction on the irradiation surface. The slit 102 used in the present invention is not particularly limited, and a slit or a structure that can block a weak portion when passing through the slit can be used.

  Next, the direction of the laser beam that has passed through the slit 102 is changed by the mirror 103 and deflected in the direction of the semiconductor film 106 provided on the surface of the glass substrate. Note that the direction of the laser beam after changing the direction may be perpendicular or oblique to the substrate.

  Next, the laser beam whose direction is changed by the mirror 103 projects the image of the slit 102 onto the semiconductor film 106 that is the irradiation surface by the first cylindrical lens 104 that acts only in one direction. Further, the laser beam is condensed by the second cylindrical lens 105 acting only in one direction rotated 90 degrees with the first cylindrical lens 104, and is irradiated onto the semiconductor film 106. With the first cylindrical lens 104 and the second cylindrical lens 105, a linear, elliptical, or rectangular beam irradiation region 111 is obtained on the irradiation surface. The first cylindrical lens 104 performs beam shaping in the long direction of the beam irradiation region 111, and the second cylindrical lens 105 performs beam shaping in the short direction of the beam irradiation region 111. The cylindrical lens used in the present invention may have a convex surface on either the incident side or the outgoing side, or may have convex surfaces on both sides. It is preferable to use one having a convex surface.

  The optical system of the present invention will be described in detail with reference to FIG. Note that the reference numerals used in FIG. 2 are the same as those used in FIG. 2A shows the long direction of the beam irradiation region, and FIG. 2B shows the short direction. A part of the laser beam emitted from the laser oscillator 101 is blocked by the slit 102, and only a portion where the intensity of the laser beam is strong passes. The laser beam that passes through the first cylindrical lens 104 projects an image formed by the slit 102 onto the semiconductor film 106. A laser beam 110 indicated by a solid line in FIG. 1 indicates a laser beam passing through the center of the beam irradiation region 111.

  Here, the positional relationship among the first cylindrical lens 104, the slit 102, and the semiconductor film 106 serving as an irradiation surface, which is one of the features of the present invention, will be described in detail. The reason for using the slit 102 is to prevent the semiconductor film from being irradiated with a weak energy portion in the laser beam. When such a laser beam is irradiated onto the semiconductor film, a polycrystalline region having a relatively small crystal grain (herein referred to as a poor crystallinity region) having many irregularities on the surface is formed, which is not preferable. Therefore, the slit 102 is used so that such a region is not formed in the semiconductor film. Normally, when a part of the laser beam is shielded by a slit, a phenomenon called diffraction due to the coherence of the laser occurs. This causes diffraction fringes in the laser beam. The following describes a method in which such diffraction fringes do not occur on the irradiated surface.

The focal length of the first cylindrical lens 104

And the width of the opening of the slit 102

And At this time, the interval between the slit 102 and the first cylindrical lens 104 is M1, and the interval between the first cylindrical lens 104 and the semiconductor film 106 is M2. Further, L is the length in the longitudinal direction on the semiconductor film 106 to be the irradiation surface. At this time, the following two expressions hold.

From the above two formulas, the following two formulas hold.

By arranging the slit, the first cylindrical lens, and the irradiation surface at a position that satisfies these relationships, the fringes due to diffraction are not transmitted to the semiconductor film. As a result, it is possible to realize laser irradiation in which almost no poor crystallinity region is generated.

  Further, when the beam diameter, output, and beam shape of the emitted laser beam can be used as they are, it is not always necessary to use two cylindrical lenses. In addition, when focusing is performed while maintaining the ratio between the long and short lengths of the emitted laser beam, a spherical lens may be used instead of the cylindrical lens.

  Then, the glass substrate on which the semiconductor film 106 is formed is moved at an appropriate speed, and laser irradiation is performed on the entire surface of the substrate. The substrate on which the semiconductor film 106 is formed is made of glass, and is fixed to the substrate fixing stage 107 by suction means or mechanical fixing means so that the substrate does not fall during laser irradiation. The substrate fixing stage 107 can be moved in the X direction or the Y direction on a plane parallel to the surface of the semiconductor film by using the X stage 108 and the Y stage 109. The X stage 108 and the Y stage 109 can move the glass substrate fixed to the substrate fixing stage 107 at a speed of 100 to 1000 mm / sec. Here, the stage on which the substrate is placed is moved in the X direction (or Y direction) with respect to the fixed irradiation region of the laser beam to scan the laser light. Note that the optimum scanning speed expected from the inventors' experience is around 400 mm / sec.

  Further, the method is not limited to the method of moving the X stage 108 and the Y stage 109, and the laser beam may be scanned by a galvano mirror or a polygon mirror, and is formed in a strip shape along the vertical direction (Y direction) of the substrate. It is only necessary that the laser beam is irradiated and the irradiation region is moved in the lateral direction (X direction) relative to the substrate to scan the laser light.

  A laser beam (the laser medium is Ti: sapphire, the output is 1.3 W, the wavelength is 800 nm, the pulse width is 150 femtoseconds on the amorphous silicon film actually formed on the glass substrate by the laser annealing method of the present invention. And the repetition frequency was set to 90 MHz), crystallization was possible. The beam spot was 8 μm × 40 μm, and the scanning speed of the stage was 100 mm / sec. FIG. 3 shows a photomicrograph (1000 × magnification) of the surface of the obtained semiconductor film. FIG. 4 shows a SEM observation photograph of the obtained semiconductor film. From this experiment, it was confirmed that a large grain size crystal can be produced by crystallization according to the present invention.

  However, FIG. 3 is a photograph of the surface of the semiconductor film in which only the irradiated region scanned with the laser light in one direction is crystallized in order to make the irradiated region and the non-irradiated region easy to understand. In FIG. 3, scanning is performed only partially, but of course, large grain crystals can be produced on the entire surface of the substrate by scanning and moving at an appropriate speed.

  By using a semiconductor film formed with a large grain crystal obtained according to the present invention to appropriately manufacture a semiconductor element such as a TFT, it can be used for development of a higher performance device.

  In addition, here is an example used for crystallization to obtain a semiconductor film having a crystal structure (hereinafter referred to as a crystalline semiconductor film) by irradiating a semiconductor film having an amorphous structure (amorphous silicon film) with laser light. However, the present invention is not particularly limited, and can be applied to various laser annealing processes typified by an activation process and a silicide formation process.

  Further, crystallization was performed by a solid phase growth method or a method of heating by adding an element that promotes crystallization such as Ni (technique described in JP-A Nos. 7-130652 and 8-78329). The semiconductor film having a crystal structure may be applied to a process of performing laser beam irradiation for further increasing the crystallization rate and repairing defects left in crystal grains.

(Embodiment 2)
A procedure for manufacturing a top gate type TFT using the present invention will be briefly described below with reference to FIGS. Here, a semiconductor film having an amorphous structure (hereinafter also referred to as an amorphous semiconductor film) is irradiated with a laser beam having a fundamental wave and a repetition frequency of 10 MHz or more, and a nonlinear optical effect (multiphoton An example is shown in which crystallization occurs due to absorption).

  First, as illustrated in FIG. 5A, a base insulating film 11 serving as a blocking layer and a semiconductor film 12 having an amorphous structure are formed over a substrate 10 having an insulating surface.

  As the substrate 10 having an insulating surface, a glass substrate such as barium borosilicate glass or alumino borosilicate glass is used. Further, a plastic substrate having heat resistance that can withstand the processing temperature in this step, for example, a plastic substrate obtained by processing a material in which inorganic particles having a diameter of several nm are dispersed in an organic polymer matrix into a sheet shape may be used.

As the base insulating film 11 formed over the substrate 10 having an insulating surface, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiO _x N _y ) is used. As a typical example, the base insulating film 11 has a two-layer structure, and a silicon nitride oxide film formed using SiH ₄ , NH ₃ , and N ₂ O as a reactive gas is 50 to 100 nm, SiH ₄ , and N ₂ O. A structure is employed in which a silicon oxynitride film is deposited to a thickness of 100 to 150 nm formed using a reactive gas as a reactive gas. Further, it is preferable to use a silicon nitride film (SiN film) or a silicon oxynitride film (SiN _x O _y film (X> Y)) having a thickness of 10 nm or less as one layer of the base insulating film 11. Alternatively, a three-layer structure in which a silicon nitride oxide film, a silicon oxynitride film, and a silicon nitride film are sequentially stacked may be used.

  For the semiconductor film 12 having an amorphous structure, a semiconductor material containing silicon as a main component is used. Typically, an amorphous silicon film, an amorphous silicon germanium film, or the like is formed by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like).

  Further, instead of the semiconductor film 12 having an amorphous structure, a semiconductor film having a crystalline structure (polycrystalline silicon film, microcrystalline semiconductor film (microcrystal semiconductor film, Or a semi-amorphous semiconductor film) may be used.

  Next, using the laser irradiation apparatus shown in FIG. 1, the semiconductor film 12 having an amorphous structure is irradiated with laser light having a fundamental wave and a repetition frequency of 10 MHz or more. Note that the laser oscillator of the laser irradiation apparatus shown in FIG. 1 does not include a nonlinear optical element, and can emit laser light, which is a fundamental wave, with high output. FIG. 5B is a process cross-sectional view illustrating a state in which laser irradiation is performed on the semiconductor film 12 having an amorphous structure. In FIG. 5B, the laser beam 16 condensed by the optical systems 30a and 30b is irradiated to form the irradiation region 13, and the stage on which the substrate is fixed is moved in the direction of the arrow 15 to crystallize the entire surface of the substrate. Is going on.

  When the laser irradiation method described in Embodiment Mode 1 is used, multi-photon absorption is generated by irradiating laser light having a fundamental wave with high-intensity laser light, so that the semiconductor film 12 having an amorphous structure is formed. The semiconductor film 14 having a crystal structure can be obtained by absorption. With the laser irradiation method described in Embodiment Mode 1, laser irradiation with almost no crystallinity defect region can be realized. Therefore, the area that cannot be used as the channel formation area of the TFT is greatly reduced, so that the yield is improved and the cost is greatly reduced.

  In addition, in the case where a semiconductor film having a crystal structure is used instead of the semiconductor film 12 having an amorphous structure and the film is formed without being separately crystallized, the film is formed by irradiation with a laser beam that is a fundamental wave. A crystal having a larger particle diameter than that after the film is obtained.

  In any case, when a laser beam is irradiated, a thin surface oxide film is formed on the surface of the semiconductor film 14 having a crystal structure. Since the film thickness and uniformity of this thin surface oxide film is unknown, it is preferable to remove it, but since it is dried on the water-repellent surface, watermarks are likely to occur. It is preferable to prevent the occurrence of watermarks by forming the. In order to reduce the number of processes, the surface oxide film formed by laser light irradiation does not have to be removed.

  Next, selective etching is performed using a photolithography technique to obtain the semiconductor layer 17. (FIG. 5C) Before forming the resist mask, ozone is generated by UV irradiation in an aqueous solution containing ozone or in an oxygen atmosphere to form an oxide film in order to protect the semiconductor layer. The oxide film here also has the effect of improving the wettability of the resist.

  If necessary, a small amount of impurity element (boron or phosphorus) is doped through the oxide film in order to control the threshold value of the TFT before selective etching using a resist. When doping is performed through the oxide film, the oxide film is removed, and an oxide film is formed again with an aqueous solution containing ozone.

  Next, after cleaning is performed to remove unnecessary materials (resist residue, resist stripping solution, and the like) generated during selective etching using a resist, the surface of the semiconductor layer 17 is covered and silicon oxide to be the gate insulating film 18 An insulating film containing as a main component is formed. (Fig. 5 (D))

    Next, after cleaning the surface of the gate insulating film 18, a gate electrode 19 is formed. As the gate electrode 19, it is preferable to use a material containing a refractory metal with less hillock generation. As the refractory metal with less generation of hillocks, one kind selected from W, Mo, Ti, Ta, Co, or the like, or an alloy thereof is used. Moreover, it is good also as a laminated | stacked two or more layers using nitrides (WN, MoN, TiN, TaN, etc.) of these refractory metals.

    Next, an impurity element imparting n-type conductivity to the semiconductor (P, As, or the like), here, phosphorus is added as appropriate, so that the source region 20 and the drain region 21 are formed. After the addition, heat treatment, intense light irradiation, or laser light irradiation is performed to activate the impurity element. Simultaneously with activation, plasma damage to the gate insulating film and plasma damage to the interface between the gate insulating film and the semiconductor layer can be recovered.

  Alternatively, the laser irradiation apparatus illustrated in FIG. 1 may be used to activate the impurity element, and laser light may be irradiated by the laser irradiation method described in Embodiment 1. When the laser irradiation apparatus shown in FIG. 1 is used, activation of the impurity element added to the semiconductor film can be favorably performed without unevenness.

  In the subsequent steps, an interlayer insulating film 23 is formed, hydrogenation is performed, contact holes reaching the source region 20 and the drain region 21 are formed, a conductive film is formed, and selective etching using a resist is performed. Is applied to the conductive film to form a source electrode 24 and a drain electrode 25 to complete a TFT (n-channel TFT). (FIG. 5E) The source electrode 24 and the drain electrode 25 are each a single layer of an element selected from Mo, Ta, W, Ti, Al, Cu, or an alloy material or a compound material containing the element as a main component, Alternatively, these layers are formed. For example, a three-layer structure of a Ti film, a pure Al film, and a Ti film, or a three-layer structure of a Ti film, an Al alloy film containing Ni and C, and a Ti film is used. In consideration of forming an interlayer insulating film or the like in a later step, the electrode cross-sectional shape is preferably a tapered shape.

  Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, it can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.

  Further, the present invention is not limited to the TFT structure of FIG. 5E, and if necessary, a lightly doped drain (LDD: Lightly Doped Drain) having an LDD region between a channel formation region and a drain region (or source region). ) Structure may be used. In this structure, a region to which an impurity element is added at a low concentration is provided between a channel formation region and a source region or a drain region formed by adding an impurity element at a high concentration, and this region is referred to as an LDD region. I'm calling. Further, a so-called GOLD (Gate-Drain Overlapped LDD) structure in which an LDD region is disposed so as to overlap with a gate electrode through a gate insulating film may be employed.

FIGS. 6A and 6B illustrate examples of GOLD structure TFTs. Note that the same reference numerals are used for the same portions in FIG. 6A because only a part of the gate electrode structure and the like are different from those in FIG. A TFT having a GOLD structure shown in FIG. 6A includes a first LDD region 26 between the channel formation region 22 and the source region 20, and a second LDD region between the channel formation region 22 and the drain region 21. 27. Further, the first LDD region 26 and the second LDD region 27 are arranged so as to overlap the lower layer 29b of the gate electrode with the gate insulating film 18 interposed therebetween. The gate electrode is composed of a stack of an upper layer 29a and a lower layer 29b wider than the upper layer 29a. Further, the GOLD structure TFT shown in FIG. 6A is provided with a protective film 28 made of a silicon nitride film. As the protective film 28, a dense inorganic insulating film (SiN, SiNO film, etc.) by a PCVD method, a dense inorganic insulating film (SiN, SiNO film, etc.) by a sputtering method, a thin film (DLC film, CN) containing carbon as a main component. It is preferable to use a film, an amorphous carbon film), a metal oxide film (WO ₂ , Al ₂ O ₃ , AlN _X O _Y, etc.) or CaF ₂ .

In addition, the TFT having the GOLD structure illustrated in FIG. 6B includes a first LDD region 36 between the channel formation region 32 and the source region 31a and a second LD between the channel formation region 32 and the drain region 31b. And an LDD region 37. In FIG. 6A, the entire LDD region overlaps with the gate electrode, whereas in FIG. 6B, the first LDD region 36 and the second LDD region 37 partially overlap with the gate electrode 39. Yes. Note that the TFT shown in FIG. 6B has two gate insulating films, a first gate insulating film 38a made of a silicon oxide film, and a second gate insulating film 38b made of a silicon nitride film. It becomes the lamination of. By using the second gate insulating film 38b made of a silicon nitride film, the gate insulating film can be thinned.

  In the TFT shown in FIG. 6B, the first interlayer insulating film 33a is a silicon nitride film, and the second gate insulating film 38b and the single-layer gate electrode 39 are surrounded by the silicon nitride film. A first interlayer insulating film 33a is provided. Particularly when the gate electrode 39 is made of an easily oxidizable conductive material such as Mo, it is effective to surround the gate electrode 39 with a silicon nitride film so as not to contact the oxide film. Further, by forming the first interlayer insulating film 33a as a silicon nitride film, it can function as a protective film and improve the adhesion with the second gate insulating film 38b made of the same material.

  In the TFT illustrated in FIG. 6B, the second interlayer insulating film 33b is a silicon oxide film, and the source electrode 24 and the drain electrode 25 are provided over the second interlayer insulating film 33b. Note that the same reference numerals are used for the same portions in FIG. 6B because only a part of the TFT structure is different from that in FIG.

  5 and 6 are described using n-channel TFTs, it is needless to say that p-channel TFTs can be formed by using p-type impurity elements instead of n-type impurity elements.

  Further, the present invention is not limited to a single-gate TFT, and a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT may be used in order to further reduce variation in the off-current value of the TFT.

  Further, an n-channel TFT and a p-channel TFT can be formed on the same substrate, and a CMOS circuit can be configured by combining these TFTs. A CMOS circuit is a circuit having at least one n-channel TFT and one p-channel TFT (inverter circuit, NAND circuit, AND circuit, NOR circuit, OR circuit, shift register circuit, sampling circuit, D / A converter) Circuit, A / D converter circuit, latch circuit, buffer circuit, etc.). In addition, by combining these CMOS circuits, memory elements such as SRAM and DRAM and other elements can be formed on the substrate. It is also possible to configure a CPU on a substrate by integrating various elements and circuits.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
An example of a dual-gate TFT using the present invention is shown below with reference to FIG.

  In the TFT illustrated in FIG. 7, a base insulating film 711 is provided over a substrate 710 having an insulating surface, and a lower electrode 712 is provided over the base insulating film 711.

  The lower electrode 712 can be formed using a polycrystalline semiconductor to which a metal or one conductivity type impurity is added. In the case of using a metal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), or the like can be used. Here, tungsten is used for the lower electrode 712, and a tungsten layer is formed to a thickness of 50 nm. The thickness of the lower electrode 712 may be 20 nm to 50 nm.

Thereafter, the lower electrode 712 is formed by etching the tungsten layer using a mask (for example, a resist mask). At this time, for example, the resist mask can be thinned by applying oxygen plasma. When etching is performed after such a step, the side surface of the lower electrode 712 to be a gate electrode can be tapered.

Note that the lower electrode 712 can also be directly formed by a printing method capable of discharging a material to a predetermined place or a droplet discharging method typified by an inkjet method. When this method is used, the lower electrode 712 can be formed without using a mask.

  The lower electrode 712 is covered with a first insulating film 713 and a second insulating film 714 that serve as a first gate insulating film. The first insulating film 713 is an insulating film containing at least oxygen or nitrogen. Note that here, a silicon nitride oxide film (SiNxOy (where x> y)) is formed as the first insulating film 713 with a thickness of 50 nm, and a silicon oxynitride film (SiOxNy (wherein x> y) is used as the second insulating film 714. x> y)) is formed with a thickness of 100 nm, but is not limited thereto.

  A semiconductor layer that overlaps with the lower electrode 712 is provided over the second insulating film 714 with the first insulating film interposed therebetween. This semiconductor layer is formed by crystallizing a semiconductor film formed by a film formation method such as a low pressure thermal CVD method, a plasma CVD method, or a sputtering method by the laser irradiation method described in Embodiment 1, and then selectively using a mask. It has been etched. With the laser irradiation method using the multiphoton absorption effect shown in Embodiment Mode 1, laser irradiation with almost no poor crystallinity region can be realized. Therefore, the area that cannot be used as the channel formation area of the TFT is greatly reduced, so that the yield is improved and the cost is greatly reduced.

  The semiconductor layer is covered with a second gate insulating film 718 made of an insulating film containing at least oxygen or nitrogen. In addition, the second gate insulating film 718 is formed without performing laser irradiation for crystallization, the semiconductor layer is physically pressed by the second gate insulating film 718, and laser irradiation is performed with the laser device illustrated in FIG. May be performed. In that case, film jump due to laser irradiation can be prevented by the second gate insulating film 718.

  An upper electrode lower layer 720 b and an upper electrode upper layer 720 a are provided over the second gate insulating film 718. The lower layer 720b of the upper electrode has a pattern wider than the upper layer 720a of the upper electrode. Both the lower layer 720b of the upper electrode and the upper layer 720a of the upper electrode may be made of a conductive material.

  The semiconductor layer includes at least a source region 716 to which an impurity element is added at a high concentration, a channel formation region 715, and a drain region 717 to which an impurity element is added at a high concentration. Here, in a state where the upper layer 720a of the upper electrode and the lower layer 720b of the upper electrode are provided, the first low-concentration impurity region that overlaps the lower layer 720b of the upper electrode by adding the impurity element through the lower layer 720b of the upper electrode is added. A (first LDD region) 719 a is formed between the source region 716 and the channel formation region 715. Similarly, a second low-concentration impurity region (second LDD region) 719 b that overlaps the lower layer 720 b of the upper electrode is formed between the drain region 717 and the channel formation region 715.

  An insulating film 721 covering the lower layer 720b of the upper electrode and the upper layer 720a of the upper electrode is provided, and an insulating film 722 for improving flatness is provided on the insulating film 721. As the insulating film 722 that improves planarity, an organic material or an inorganic material can be used. As the organic material, resist, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, siloxane, or polysilazane can be used. Siloxane is an inorganic siloxane containing Si-O-Si bonds among compounds composed of silicon, oxygen, and hydrogen formed from siloxane-based materials, and hydrogen bonded to silicon is formed by organic groups such as methyl and phenyl. It is a substituted organosiloxane insulating material. Polysilazane is formed using a polymer material having a bond of silicon (Si) and nitrogen (N), that is, a liquid material containing so-called polysilazane as a starting material. Examples of the inorganic material include at least oxygen or silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy (where x> y)), silicon nitride oxide (SiNxOy (where x> y)), or the like. An insulating film containing nitrogen can be used. Alternatively, a stacked film of these insulating films may be used as the insulating film 722 for improving flatness. In particular, when an insulating film that increases flatness is formed using an organic material, the flatness is increased, but moisture and oxygen are absorbed by the organic material. In order to prevent this, an insulating film containing an inorganic material is preferably formed over the organic material. When an insulating film containing nitrogen is used as the inorganic material, entry of alkali ions such as Na can be prevented.

  Further, a source wiring 723 is provided over the insulating film 722 that improves planarity through a contact hole reaching the source region 716. Similarly, a drain wiring 724 is provided over the insulating film 722 for improving flatness through a contact hole reaching the drain region 717.

  The TFT having the structure shown in FIG. 7 is a dual-gate TFT in which channels are formed above and below one semiconductor layer. The lower electrode 712 of the dual-gate TFT has a feature that the TFT can be controlled separately from the upper electrode, can suppress variation in threshold value, and can suppress off-state current. In the dual gate TFT, a capacitor can be formed by a lower electrode and a semiconductor layer with an insulating film interposed therebetween.

  Further, this embodiment can be freely combined with Embodiment 1 or Embodiment 2.

(Embodiment 4)
The present invention can be applied to a method for manufacturing a liquid crystal display device or a light-emitting display device. Here, an example of a display device in which a pixel portion, a driver circuit, and a terminal portion are formed over the same substrate is shown. According to the present invention, a semiconductor thin film that can follow high-speed driving can be obtained, and a driving circuit can be configured using higher-performance TFTs. FIG. 8 shows an example of a light-emitting device having an organic light-emitting element as a display device.

After a base insulating film is formed over the substrate 610, each semiconductor layer is formed. Crystallization of the semiconductor layer is performed in accordance with Embodiment Mode 1 or Embodiment Mode 2. If crystallization is performed in accordance with the first embodiment, laser irradiation with almost no crystallinity defect region can be performed, and a semiconductor of a TFT that forms part of a driver circuit using a semiconductor film in which a large grain crystal is formed A layer can be formed. Therefore, a driving circuit capable of high-speed driving can be realized.

  Next, after forming a gate insulating film covering the semiconductor layer, each gate electrode and terminal electrode are formed. Next, an impurity element imparting n-type conductivity (typically phosphorus or As) is doped into the semiconductor in order to form an n-channel TFT 636, and p-type is imparted to the semiconductor in order to form a p-channel TFT 637. A source region and a drain region, and if necessary, an LDD region are appropriately formed by doping with an impurity element (typically boron). Next, after forming a silicon nitride oxide film (SiNO film) containing hydrogen obtained by a PCVD method, the impurity element added to the semiconductor layer is activated and hydrogenated.

  Next, a planarization insulating film 616 to be an interlayer insulating film is formed. As the planarization insulating film 616, an insulating film in which a skeleton structure is formed by a bond of silicon (Si) and oxygen (O) obtained by a coating method is used.

Next, a contact hole is formed in the planarization insulating film using a mask, and at the same time, the planarization insulating film at the peripheral portion is removed.

Next, etching is performed using the planarization insulating film 616 as a mask to selectively remove the exposed SiNO film or gate insulating film containing hydrogen.

Next, after forming a conductive film, etching is performed using a mask to form drain wirings and source wirings.

Next, the first electrode 623, that is, the anode (or cathode) of the organic light emitting element is formed. As the first electrode 623, a conductive film having a high work function is preferably used, and in addition to indium tin oxide (ITO), for example, indium tin oxide containing Si element (ITSO) or indium oxide is 2 to 20%. A film containing a transparent conductive material such as IZO (Indium Zinc Oxide) mixed with atomic% zinc oxide (ZnO) or a combination of these can be used. In particular, ITSO does not crystallize like ITO even when baked and remains in an amorphous state. Therefore, ITSO has higher flatness than ITO, and even if the layer containing an organic compound is thin, short-circuiting with the cathode hardly occurs, so that ITSO is suitable as an anode of a light-emitting element.

Next, an insulator 629 (a bank, a partition, a barrier, a bank, or the like) that covers an end portion of the first electrode 623 is selectively etched by an SOG film (for example, a SiOx film containing an alkyl group) obtained by a coating method. Called). The insulator 629 is formed using a material containing silicon, an organic material, and a compound material. A porous film may be used. However, it is preferable to use a photosensitive or non-photosensitive material such as acrylic or polyimide because the side surface has a shape in which the radius of curvature continuously changes and the upper thin film is formed without being cut off. Further, as a material of the insulator 629, a photosensitive or non-photosensitive organic material in which a black pigment or carbon black is dispersed may be used, and the insulator 629 may function as a black matrix (BM).

  Next, a layer 624 containing an organic compound is formed by an evaporation method, a thermal transfer method, a droplet discharge method, or a screen printing method. The layer 624 containing an organic compound has a stacked structure, and is sequentially stacked with, for example, an electron transport layer (electron injection layer), a light emitting layer, a hole transport layer, and a hole injection layer.

  Here, molybdenum oxide (MoOx), 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (α-NPD), and rubrene are used together by vapor deposition. A layer containing a first organic compound (first layer) is formed over the first electrode 623 by vapor deposition. Next, α-NPD is selectively deposited using a deposition mask to form a hole transport layer (second layer) on the layer containing the first organic compound. Further, in place of molybdenum oxide (MoOx), one or more tumors selected from MoNx, VOx, RuOx, CoOx, CuOx, ZnNx, WNx, InOx, InNx, SnOx, SnNx, SbOx, and SbNx can be used. .

Next, a light emitting layer (third layer) is selectively formed. The light-emitting layer is formed of a charge injecting and transporting substance containing an organic compound or an inorganic compound and a light-emitting material, and is classified into a low molecular weight organic compound or a medium molecular weight organic compound (not sublimable and molecular An organic compound having a number of 20 or less, or a chained molecule having a length of 10 μm or less), including one or more layers selected from high-molecular organic compounds, and has an electron injection transport property or a hole injection transport property May be combined with an inorganic compound. In addition to the singlet excited light emitting material, a triplet excited light emitting material containing a metal complex or the like may be used for the light emitting layer. For example, among red light emitting pixels, green light emitting pixels, and blue light emitting pixels, a red light emitting pixel having a relatively short luminance half time is formed of a triplet excitation light emitting material, and the other A singlet excited luminescent material is used. The triplet excited luminescent material has a feature that the light emission efficiency is good, so that less power is required to obtain the same luminance. That is, when applied to a red pixel, the amount of current flowing through the light emitting element can be reduced, so that reliability can be improved. As a reduction in power consumption, a red light-emitting pixel and a green light-emitting pixel may be formed using a triplet excitation light-emitting material, and a blue light-emitting pixel may be formed using a singlet excitation light-emitting material. By forming a green light-emitting element having high human visibility with a triplet excited light-emitting material, power consumption can be further reduced.

  Examples of triplet excited luminescent materials include those using a metal complex as a dopant, and metal complexes having a third transition series element platinum as the central metal and metal complexes having iridium as the central metal are known. Yes. The triplet excited light-emitting material is not limited to these compounds, and a compound having the above structure and having an element belonging to group 8 to 10 in the periodic table as a central metal can also be used.

  In order to obtain a full-color display device, the vapor deposition mask is aligned for each of the emission colors (R, G, B) to selectively deposit each. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed for each pixel.

Next, Alq ₃ (tris (8-quinolinolato) aluminum) is selectively deposited using a deposition mask to form an electron transport layer (fourth layer) on the light emitting layer. Next, 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs) and lithium (Li) are co-evaporated to cover the electron transport layer and the insulator, and an electron injection layer is formed over the entire surface. (Fifth layer) is formed. Note that each material of the layer 624 (the first layer to the fifth layer) containing an organic compound is appropriately selected, and each film thickness is also adjusted.

  The above-described substances forming the layer 624 containing an organic compound are examples, and include a hole injection transport layer, a hole transport layer, an electron injection transport layer, an electron transport layer, a light emitting layer, an electron block layer, a hole block layer, and the like. A light-emitting element can be formed by appropriately stacking these functional layers. Moreover, you may form the mixed layer or mixed junction which combined these each layer. The layer structure of the light-emitting layer can be changed, and instead of having a specific electron injection region or light-emitting region, it is possible to provide a modification with an electrode for this purpose or a dispersed light-emitting material. Can be permitted without departing from the spirit of the present invention.

Next, a second electrode 625 made of a transparent conductive film, that is, a cathode (or an anode) of the organic light-emitting element is formed over the layer 624 containing an organic compound. Next, a transparent protective layer 626 is formed by vapor deposition or sputtering. The transparent protective layer 626 protects the second electrode 625. As the transparent protective layer 626, a dense inorganic insulating film (SiN, SiNO film, etc.) by a PCVD method, a dense inorganic insulating film (SiN, SiNO film, etc.) by a sputtering method, a thin film (DLC film, CN film, amorphous carbon film), metal oxide film (WO ₂ , CaF ₂ , Al ₂ O ₃ , AlN _X O _Y, etc.) are preferably used. Transparent means that the transmittance of visible light is 80 to 100%.

  Next, a transparent sealing substrate 633 is attached with a sealant 628 to seal the light emitting element. That is, the light emitting display device is sealed with a pair of substrates by surrounding the outer periphery of the display region with a sealant. Since the interlayer insulating film of the TFT is provided on the entire surface of the substrate, when the sealing material pattern is drawn on the inner side of the outer peripheral edge of the interlayer insulating film, one of the interlayer insulating films located outside the sealing material pattern. There is a risk of moisture and impurities entering from the part. Accordingly, the outer periphery of the planarization insulating film used as the interlayer insulating film of the TFT is overlapped with the inside of the sealing material pattern, preferably, the sealing material pattern so that the end of the planarizing insulating film covers the sealing material. . Note that a region surrounded by the sealant 628 is filled with a transparent filler 627. As the transparent filler 627, ultraviolet curable resin, thermosetting resin, silicone resin, epoxy resin, acrylic resin, polyimide resin, phenol resin, PVC (polyvinyl chloride), PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate) Can be used.

  Further, instead of filling the region surrounded by the sealing material 628 with a transparent filler, it may be filled with a dry inert gas. In that case, calcium oxide, barium oxide, etc. A desiccant that absorbs moisture by chemical adsorption is disposed.

  Finally, the FPC 632 is attached to the terminal electrode by an anisotropic conductive film 631 by a known method. The terminal electrode is preferably made of a transparent conductive film, and is formed on the terminal electrode formed simultaneously with the gate wiring. (Fig. 8)

Through the above steps, the pixel portion, the driver circuit, and the terminal portion can be formed over the same substrate.

  In addition, light from the light-emitting element passes through the substrate 610 and the sealing substrate 633 and is extracted to both sides. The structure shown in FIG. 8 is a light-emitting device having a structure in which light is extracted through both a substrate and a sealing substrate.

  A polarizing plate, a circularly polarizing plate, or a combination thereof can be provided depending on the structure of the light-emitting device in which light is extracted through both the substrate and the sealing substrate. As a result, a clear black display can be performed and the contrast is improved. Furthermore, reflection light can be prevented by providing a circularly polarizing plate.

  In addition, when a reflective metal material is used for the second electrode 625 instead of the transparent conductive film, a downward light-emitting light-emitting device can be obtained. Further, when a transparent conductive film is used for the second electrode 625, an upward light-emitting light-emitting device can be obtained.

  Further, if necessary, not only a polarizing plate and a circularly polarizing plate, but also other optical films (a retardation plate, a color filter, a color conversion filter, etc.) and a microlens array may be provided. For example, a color filter may be provided on the light emitting element side surface or the viewer side surface of the sealing substrate that overlaps the display region, and the color purity of each light emission may be improved from the RGB light emitting elements provided in the display unit. . Alternatively, a white light emitting element may be provided in the display portion, and a color filter or a color filter and a color conversion layer may be separately provided to enable full color display.

  In the light emitting device, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

  Further, in a light emitting device in which a video signal is digital, there are a video signal input to a pixel having a constant voltage (CV) and a constant current (CC). A video signal having a constant voltage (CV) includes a constant voltage (CVCV) applied to the light emitting element and a constant current (CVCC) applied to the light emitting element. In addition, a video signal having a constant current (CC) includes a constant voltage (CCCV) applied to the light emitting element and a constant current (CCCC) applied to the light emitting element.

  In the light emitting device, a protection circuit (such as a protection diode) for preventing electrostatic breakdown may be provided.

Further, an example in which an FPC or a driving IC for driving is mounted on a light-emitting display panel manufactured by the above manufacturing method will be described.

  FIG. 9A illustrates an example of a top view of a light-emitting device in which an FPC 1209 is attached to four terminal portions 1208. Over a substrate 1210, a pixel portion 1202 including a light emitting element and a TFT, a gate side driver circuit 1203 including a TFT, and a source side driver circuit 1201 including a TFT are formed. The active layer of the TFT is composed of a semiconductor film having a crystal structure, and these circuits are formed on the same substrate. Therefore, an EL display panel that realizes system-on-panel can be manufactured.

Note that the substrate 1210 is covered with a protective film except for the contact portion, and a base layer containing a substance having a photocatalytic function is provided over the protective film.

  In addition, connection regions 1207 provided at two positions so as to sandwich the pixel portion are provided in order to contact the second electrode of the light emitting element with a lower wiring. Note that the first electrode of the light-emitting element is electrically connected to a TFT provided in the pixel portion.

  Further, the sealing substrate 1204 is fixed to the substrate 1210 with a sealant 1205 that surrounds the pixel portion and the driver circuit and a filling material that is surrounded by the sealant. Moreover, you may fill a space using the filling material containing a transparent desiccant. Further, a desiccant may be disposed in a region that does not overlap with the pixel portion.

  The structure shown in FIG. 9A shows a preferable example of a light emitting device having a relatively large size (for example, 4.3 inches diagonal) of XGA, for example, but FIG. 9B shows a narrow frame. This is an example in which a suitable COG method is adopted with a small size (for example, a diagonal of 1.5 inches).

In FIG. 9B, a driver IC 1301 is mounted on a substrate 1310, and an FPC 1309 is mounted on a terminal portion 1308 arranged at the tip of the driver IC. A plurality of driver ICs 1301 to be mounted may be formed on a rectangular substrate having a side of 300 mm to 1000 mm or more from the viewpoint of improving productivity. That is, a plurality of circuit patterns having a drive circuit portion and an input / output terminal as one unit are formed on the substrate, and finally, the drive ICs may be taken out by dividing them. When the semiconductor layer of the TFT used for the driver IC is crystallized by the laser irradiation apparatus shown in FIG. 1, a high-performance driver IC can be obtained. The length of the long side of the driving IC may be formed in a rectangular shape having a long side of 15 to 80 mm and a short side of 1 to 6 mm in consideration of the length of one side of the pixel unit and the pixel pitch. Or a length obtained by adding one side of the pixel portion and one side of each driver circuit.

  The advantage of the external dimensions of the driving IC over the IC chip is the length of the long side. When a driving IC having a long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion is obtained. This is less than when an IC chip is used, and the manufacturing yield can be improved. Further, when the driving IC is formed over the glass substrate, the shape of the substrate used as a base is not limited, and thus productivity is not impaired. This is a great advantage compared with the case where the IC chip is taken out from the circular silicon wafer.

  Alternatively, a TAB method may be employed. In that case, a plurality of tapes may be attached and a driving IC may be mounted on the tapes. As in the case of the COG method, a single drive IC may be mounted on a single tape. In this case, a metal piece or the like for fixing the drive IC may be attached together due to strength problems.

The substrate 1310 is also covered with a protective film other than the contact portion, and a base layer containing a substance having a photocatalytic function is provided on the protective film.

  A connection region 1307 provided between the pixel portion 1302 and the driver IC 1301 is provided in order to contact the second electrode of the light-emitting element with a lower wiring. Note that the first electrode of the light-emitting element is electrically connected to a TFT provided in the pixel portion.

  In addition, the sealing substrate 1304 is fixed to the substrate 1310 with a sealing material 1305 surrounding the pixel portion 1302 and a filling material surrounded by the sealing material.

  In the case where an amorphous semiconductor film is used as the active layer of the TFT in the pixel portion, it is difficult to form a driver circuit over the same substrate. It becomes.

  Although an example of an active matrix light-emitting device is shown here as a display device, it is needless to say that the present invention can also be applied to an active matrix liquid crystal display device. In an active matrix liquid crystal display device, a display pattern is formed on a screen by driving pixel electrodes arranged in a matrix. Specifically, the voltage is applied to the selected pixel electrode and the counter electrode corresponding to the pixel electrode, so that the pixel electrode is disposed between the pixel electrode provided on the element substrate and the counter electrode provided on the counter substrate. Optical modulation of the liquid crystal layer is performed, and this optical modulation is recognized by the observer as a display pattern. The counter substrate and the element substrate are arranged at equal intervals and filled with a liquid crystal material. The liquid crystal material may be a method of dropping the liquid crystal under reduced pressure so that bubbles do not enter with the sealing material as a closed pattern, and bonding both substrates together, or providing a sealing pattern having an opening, and a TFT substrate Alternatively, a dip type (pumping type) in which liquid crystal is injected by using a capillary phenomenon after bonding may be used.

  The present invention can also be applied to a liquid crystal display device using a field sequential driving method in which an optical shutter is used without using a color filter and the backlight light sources of three colors of RGB blink at high speed.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

(Embodiment 5)
In this embodiment mode, an example in which a CPU (Central Processing Unit) is manufactured using the present invention is illustrated in FIGS. 10A to 10C, FIGS. 11A to 11C, 12 (A) to 12 (C), FIG. 13 (A), FIG. 13 (B), and FIG.

  As shown in FIG. 10A, a base insulating film 1401 is formed over a substrate 1400 having an insulating surface. As the substrate 1400, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass can be used. In addition, plastics typified by PET, PES, PEN, and substrates made of flexible synthetic resin such as acrylic generally tend to have lower heat-resistant temperatures than other substrates. Any material that can withstand the processing temperature in the process can be used.

  The base insulating film 1401 is provided to prevent alkali metal such as Na or alkaline earth metal contained in the substrate 1400 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, or the like that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used.

  An amorphous semiconductor film 1402 is formed over the base insulating film 1401. The thickness of the amorphous semiconductor film 1402 is 25 to 100 nm (preferably 30 to 60 nm). As the amorphous semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. Here, a semiconductor film containing 66 nm silicon as a main component (also referred to as an amorphous silicon film or amorphous silicon) is used.

  After that, as described in Embodiment Mode 1, the amorphous semiconductor film 1402 is irradiated with laser light (laser beam) 1405 that is a fundamental wave to cause multiphoton absorption. (See FIG. 10B). In order to cause multiphoton absorption, the pulse width of the laser beam is set to the picosecond range or the femtosecond range. By this laser irradiation, the amorphous semiconductor film 1402 is crystallized, and a semiconductor film having a crystal structure (here, a polysilicon film) is formed.

  Next, as illustrated in FIG. 10C, the semiconductor film having a crystal structure is selectively etched into a predetermined shape, so that island-shaped semiconductor layers 1406a to 1406e are obtained.

  Next, if necessary, a small amount of an impurity element (such as boron) is added in order to bring the threshold value, which is an electrical characteristic of the thin film transistor, closer to zero.

  Next, an insulating film that covers the island-shaped semiconductor layers 1406a to 1406e, that is, a so-called gate insulating film 1408 is formed. Note that the surface of the island-shaped semiconductor film is washed with hydrofluoric acid or the like before the gate insulating film 1408 is formed. The gate insulating film 1408 is formed of an insulating film containing silicon with a thickness of 10 to 150 nm, preferably 20 to 40 nm, using a plasma CVD method or a sputtering method. Needless to say, the gate insulating film is not limited to the silicon oxide film, and another insulating film containing silicon (such as a silicon nitride film or a silicon oxynitride film) may be used as a single layer or a stacked structure.

  After that, conductive films 1409a and 1409b to be gate electrodes are formed over the gate insulating film 1408. Although the gate electrode has a two-layer structure here, it may of course be a single layer or a laminate of three or more layers. The conductive films 1409a and 1409b may be formed using an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component.

  Next, as illustrated in FIG. 11A, a resist mask 1410 for etching the first conductive film 1409a and the second conductive film 1409b is formed. Note that the end portion of the resist mask 1410 may have a tapered shape, and the shape of the resist mask may be a sector shape or a trapezoid shape.

  Next, as illustrated in FIG. 11B, the second conductive film 1409 b is selectively etched using a resist mask 1410. Note that the first conductive film 1409a functions as a so-called etching stopper so that the gate insulating film and the semiconductor film are not etched. The etched second conductive film 1409b has a gate length 1413 of 0.2 μm to 1.0 μm.

  Next, as illustrated in FIG. 11C, the first conductive film 1409a is etched with the resist mask 1410 provided. At this time, the first conductive film 1409a is etched under a condition with a high selection ratio between the gate insulating film 1408 and the first conductive film 1409a. Through this step, the resist mask 1410 and the second conductive film 1409b may be slightly etched and further thinned. As described above, a gate electrode having a very small gate length of 1.0 μm or less is formed.

Next, the resist mask 1410 is removed by O ₂ ashing or a resist stripping solution, and a resist mask 1415 for adding impurities is appropriately formed. Here, a resist mask 1415 is formed so as to cover a region to be a p-channel TFT.

Next, as shown in FIG. 12A, phosphorus (P), which is an impurity element, is added in a self-aligned manner to a region to be an n-channel TFT using the gate electrode as a mask. Here, phosphine (PH ₃ ) is doped at 60 to 80 keV. Through this step, impurity regions 1416a to 1416c are formed in a region to be an n-channel TFT.

  Next, the resist mask 1415 is removed, and a resist mask 1417 is formed so as to cover a region to be an n-channel TFT. Next, as shown in FIG. 12B, boron (B) which is an impurity element is added in a self-aligning manner using the gate electrode as a mask. By this step, impurity regions 1418a and 1418b are formed in a region to be a p-channel TFT.

  Next, after removing the resist mask 1417, as shown in FIG. 12C, insulating films covering the side surfaces of the gate electrode, so-called sidewalls 1419a to 1419c, are formed. The sidewall can be formed by performing etching as appropriate after an insulating film containing silicon is formed by a plasma CVD method or a low pressure CVD (LPCVD) method.

Next, a resist mask 1421 is formed over the p-channel TFT, and phosphine (PH ₃ ) is doped at 15 to 25 keV to form high-concentration impurity regions, so-called source regions and drain regions. By this step, as shown in FIG. 12C, high-concentration impurity regions 1420a to 1420c are formed in a self-aligning manner using the side walls 1419a to 1419c as masks.

Next, the resist mask 1421 is removed by O ₂ ashing or a resist stripping solution.

  Next, heat treatment for activating each impurity region is performed. Here, the impurity region is activated by using the laser irradiation method described in Embodiment Mode 1. Alternatively, the impurity region may be activated by heating the substrate to 550 ° C. in a nitrogen atmosphere.

  Next, a first interlayer insulating film 1422 covering the gate insulating film 1408 and the gate electrode is formed. As the first interlayer insulating film 1422, an inorganic insulating film containing hydrogen, for example, a silicon nitride film is used.

  Thereafter, heat treatment is performed and hydrogenation is performed. A dangling bond of the silicon oxide film or the silicon film is terminated by hydrogen released from the silicon nitride film which is the first interlayer insulating film 1422.

  Next, as shown in FIG. 13A, a second interlayer insulating film 1423 is formed so as to cover the first interlayer insulating film 1422. The second interlayer insulating film 1423 is formed using an inorganic material (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene). ), A skeletal structure is formed by the bond of silicon (Si) and oxygen (O), and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, an alkyl group, or an aromatic hydrocarbon Materials, so-called siloxanes, and their laminated structures can be used.

  Next, openings, so-called contact holes, are formed in the gate insulating film 1408, the first interlayer insulating film 1422, and the second interlayer insulating film 1423. Then, as illustrated in FIG. 13B, wirings 1425a to 1425e connected to the impurity regions are formed. Further, if necessary, a wiring connected to the gate electrode is formed at the same time. Note that these wirings may be formed using a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si), or an alloy film using these elements. In addition, these wirings may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon.

  As described above, an n-channel thin film transistor having an LDD structure formed so as to have a low-concentration impurity region and a gate length of 1.0 μm or less can be formed. Further, a p-channel thin film transistor having a so-called single drain structure formed so as not to have a low concentration impurity region and having a gate length of 1.0 μm or less is completed. A TFT having a gate length of 1.0 μm or less can be expressed as a submicron TFT. A p-channel thin film transistor can hardly have deterioration due to hot carriers and a short channel effect, and thus can have a single-drain structure.

  Note that in the present invention, a p-channel thin film transistor may have an LDD structure. Further, an n-channel thin film transistor and a p-channel thin film transistor may have a so-called GOLD structure in which a low-concentration impurity region overlaps with a gate electrode instead of the LDD structure.

  In the present embodiment, a semiconductor device having a thin film transistor formed as described above, a CPU can be manufactured, and a driving voltage of 5 V enables an operation frequency of 30 MHz.

  Next, an example in which various circuits are formed using the above-described thin film transistors as appropriate will be described with reference to FIGS. FIG. 14 is a block diagram of the CPU formed on the glass substrate 1600.

  14 includes an arithmetic circuit (ALU) 1601, an arithmetic circuit control unit (ALU Controller) 1602, an instruction analysis unit (Instruction Decoder) 1603, and an interrupt control unit (Interrupt). Controller 1604, timing controller 1605, register 1606, register controller 1607, bus interface (Bus I / F) 1608, rewritable ROM 1609, ROM interface (ROM I / F) ) 1620. The ROM 1609 and the ROM I / F 1620 may be provided in separate chips.

  Needless to say, the CPU illustrated in FIG. 14 is just an example in which the configuration is simplified, and an actual CPU may have various configurations depending on the application.

  The instruction input to the CPU via the bus interface 1608 is input to the instruction analysis unit 1603 and decoded, and then is input to the control unit 1602 for the arithmetic circuit, the interrupt control unit 1604, the register control unit 1607, and the timing control unit 1605. Entered.

  An arithmetic circuit control unit 1602, an interrupt control unit 1604, a register control unit 1607, and a timing control unit 1605 perform various controls based on the decoded instruction. Specifically, the arithmetic circuit control unit 1602 generates a signal for controlling the operation of the arithmetic circuit 1601. The interrupt control unit 1604 determines and processes an interrupt request from an external input / output device or a peripheral circuit from the priority or mask state during execution of the CPU program. The register control unit 1607 generates an address of the register 1606, and reads and writes the register 1606 according to the state of the CPU.

  In addition, the timing control unit 1605 generates a signal for controlling the operation timing of the arithmetic circuit 1601, the arithmetic circuit control unit 1602, the instruction analysis unit 1603, the interrupt control unit 1604, and the register control unit 1607. For example, the timing control unit 1605 includes an internal clock generation unit that generates an internal clock signal CLK2 (1622) based on the reference clock signal CLK1 (1621), and supplies the clock signal CLK2 to the various circuits.

  According to the present invention, laser light irradiation with a large area can be performed by one-time laser light scanning, so that a low-cost CPU can be manufactured.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

(Embodiment 6)
Here, examples of manufacturing IC tags using the present invention are shown in FIGS. 15A to 15E, FIGS. 16A to 16E, and FIGS. 17A to 17C. 18 (A) and FIG. 18 (B).

  An example of using an insulated TFT as a semiconductor element used in an IC tag integrated circuit is shown below, but the semiconductor element used in an IC tag integrated circuit is not limited to a TFT, and any element can be used. Can do. For example, in addition to the TFT, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, and the like can be typically given.

  First, as illustrated in FIG. 15A, a separation layer 1501 is formed over a glass substrate (first substrate) 1500 by a sputtering method. The peeling layer 1501 can be formed by a sputtering method, a low pressure CVD method, a plasma CVD method, or the like. In this embodiment mode, amorphous silicon with a thickness of about 50 nm is formed by a low pressure CVD method and used as the separation layer 1501. Note that the peeling layer 1501 is not limited to silicon, and may be formed using a material that can be selectively removed by etching (for example, W, Mo, or the like). The thickness of the release layer 1501 is desirably 50 to 60 nm.

  Next, a base insulating film 1502 is formed over the peeling layer 1501. The base insulating film 1502 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the first substrate from diffusing into the semiconductor film and adversely affecting the characteristics of a semiconductor element such as a TFT. The base insulating film 1502 also has a role of protecting the semiconductor element in a process of peeling the semiconductor element later. The base insulating film 1502 may be a single layer or a stack of a plurality of insulating films. Therefore, an insulating film such as silicon oxide, silicon nitride, silicon oxide containing nitrogen (SiON), or silicon nitride containing oxygen (SiNO) that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used. Form.

  Next, a semiconductor film is formed over the base insulating film 1502. The semiconductor film 1503 is preferably formed without being exposed to the air after the base insulating film 1502 is formed. The thickness of the semiconductor film is 20 to 200 nm (desirably 40 to 170 nm, preferably 50 to 150 nm).

  Then, according to Embodiment Mode 1, the semiconductor film 1503 is crystallized by irradiating a laser beam which is a fundamental wave to cause multiphoton absorption. By irradiating the semiconductor film 1503 with laser light, a semiconductor film 1504 having a crystal structure is formed. Note that FIG. 15A is a cross-sectional view illustrating the middle of scanning with laser light.

  Next, as illustrated in FIG. 15B, the semiconductor film 1504 having a crystal structure is selectively etched to form island-shaped semiconductor films 1506 to 1508, and then a gate insulating film 1509 is formed. The gate insulating film 1509 can be formed using a single layer or a stack of films containing silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen using a plasma CVD method, a sputtering method, or the like. it can.

  Note that after the gate insulating film 1509 is formed, heat treatment is performed at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3% or more of hydrogen (this process is also referred to as hydrogenation), and the island-shaped semiconductor film 1506 is formed. ˜1508 may be hydrogenated. Further, plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

  Next, as shown in FIG. 15C, gate electrodes 1510 to 1512 are formed. Here, after forming Si and W to be laminated by sputtering, the gate electrodes 1510 to 1512 are formed by etching using the resist 1513 as a mask. Needless to say, the conductive material, structure, and manufacturing method of the gate electrodes 1510 to 1512 are not limited to these, and can be selected as appropriate. For example, the gate electrode may have a stacked structure of Si and NiSi (nickel silicide) doped with an impurity imparting n-type, or a stacked structure of TaN (tantalum nitride) and W (tungsten). Alternatively, the gate electrode may be formed with a single layer using various conductive materials. In the case where the gate electrode and the antenna are formed at the same time, materials may be selected in consideration of their functions.

  In place of the resist mask, a mask such as SiOx may be used. In this case, a step of selectively etching to form a mask (referred to as a hard mask) of SiOx, SiON or the like is added, but since the film thickness of the mask during etching is less than that of the resist, a gate electrode having a desired width is formed. 1510-1512 can be formed. Alternatively, the gate electrodes 1510 to 1512 may be selectively formed using a droplet discharge method without using the resist 1513.

  Next, as illustrated in FIG. 15D, the island-shaped semiconductor film 1507 to be a p-channel TFT is covered with a resist 1515, and the island-shaped semiconductor films 1506 and 1508 are formed on the island-shaped semiconductor films 1506 and 1508 using the gate electrodes 1510 and 1512 as masks. An impurity element imparting a mold (typically, P (phosphorus) or As (arsenic)) is doped at a low concentration. By this doping step, doping is performed through the gate insulating film 1509, and a pair of low-concentration impurity regions 1516 and 1517 are formed in the island-shaped semiconductor films 1506 and 1508. Note that this doping step may be performed without covering the island-shaped semiconductor film 1507 to be a p-channel TFT with a resist.

  Next, as shown in FIG. 15E, after the resist 1515 is removed by ashing or the like, a resist 1518 is newly formed so as to cover the island-shaped semiconductor films 1506 and 1508 to be n-channel TFTs. Using the electrode 1511 as a mask, the island-shaped semiconductor film 1507 is doped with an impurity element imparting p-type conductivity (typically B (boron)) at a high concentration. By this doping step, doping is performed through the gate insulating film 1509, and a pair of p-type high concentration impurity regions 1520 are formed in the island-shaped semiconductor film 1507.

  Next, as illustrated in FIG. 16A, after removing the resist 1518 by ashing or the like, an insulating film 1521 is formed so as to cover the gate insulating film 1509 and the gate electrodes 1510 to 1512.

After that, the insulating film 1521 and the gate insulating film 1509 are partially etched by an etch back method, and the side walls 1522 to 1524 in contact with the side walls of the gate electrodes 1510 to 1512 are self-aligned as shown in FIG. (Self-aligned). As an etching gas, a mixed gas of CHF ₃ and He was used. Note that the step of forming the sidewall is not limited to these.

  Next, as shown in FIG. 16C, a resist 1526 is newly formed so as to cover the island-shaped semiconductor film 1507 to be a p-channel TFT, and the gate electrodes 1510 and 1512 and the sidewalls 1522 and 1524 are masked. As described above, an impurity element imparting n-type (typically P or As) is doped at a high concentration. By this doping step, the island-shaped semiconductor films 1506 and 1508 are doped through the gate insulating film 1509, and a pair of n-type high concentration impurity regions 1527 and 1528 are formed.

  Next, after removing the resist 1526 by ashing or the like, the impurity regions may be thermally activated. For example, after a 50 nm SiON film is formed, heat treatment may be performed in a nitrogen atmosphere at 550 ° C. for 4 hours. In addition, after the SiNx film containing hydrogen is formed to a thickness of 100 nm, defects in the polycrystalline semiconductor film can be improved by performing heat treatment at 410 ° C. for 1 hour in a nitrogen atmosphere. This terminates dangling bonds existing in the polycrystalline semiconductor film, for example, and is called a hydrogenation process.

  Through the series of steps described above, an n-channel TFT 1530, a p-channel TFT 1531, and an n-channel TFT 1532 are formed. In the manufacturing process, a TFT having a channel length of 0.2 μm to 2 μm can be formed by appropriately changing the conditions of the etch back method and adjusting the size of the sidewall.

  Further, after that, a passivation film for protecting the TFTs 1530 to 1532 may be formed.

  Next, as illustrated in FIG. 16D, a first interlayer insulating film 1533 is formed so as to cover the TFTs 1530 to 1532.

  Further, a second interlayer insulating film 1534 is formed over the first interlayer insulating film 1533. Note that the first interlayer insulating film 1533 or the second interlayer insulating film 1534 and the first interlayer insulating film 1533 or the first interlayer insulating film 1533 or the second interlayer insulating film 1534 due to a stress generated from a difference in thermal expansion coefficient between a conductive material or the like that forms a wiring to be formed later. In order to prevent peeling or cracking of the second interlayer insulating film 1534, a filler may be mixed in the first interlayer insulating film 1533 or the second interlayer insulating film 1534.

  Next, as shown in FIG. 16D, contact holes are formed in the first interlayer insulating film 1533, the second interlayer insulating film 1534, and the gate insulating film 1509, and wirings 1535 to 1539 connected to the TFTs 1530 to 1532 are formed. Form. Note that the wirings 1535 and 1536 are in the high concentration impurity region 1527 of the n-channel TFT 1530, the wirings 1536 and 1537 are in the high concentration impurity region 1520 of the p-channel TFT 1531, and the wirings 1538 and 1539 are in the high concentration impurity region of the n-channel TFT 1532. 1528, respectively. Further, the wiring 1539 is connected to the gate electrode 1512 of the n-channel TFT 1532. The n-channel TFT 1532 can be used as a memory element of a random number ROM.

  Next, as illustrated in FIG. 16E, a third interlayer insulating film 1541 is formed over the second interlayer insulating film 1534 so as to cover the wirings 1535 to 1539. The third interlayer insulating film 1541 is formed to have an opening at a position where the wiring 1535 is partially exposed. Note that the third interlayer insulating film 1541 can be formed using a material similar to that of the first interlayer insulating film 1533.

  Next, an antenna 1542 is formed over the third interlayer insulating film 1541. The antenna 1542 is formed using a conductive material including one or more metals such as Ag, Au, Cu, Pd, Cr, Mo, Ti, Ta, W, Al, Fe, Co, Zn, Sn, and Ni, and a metal compound. Can do. The antenna 1542 is connected to the wiring 1535. In FIG. 16E, the antenna 1542 is directly connected to the wiring 1535; however, the IC tag of the present invention is not limited to this structure. For example, the antenna 1542 and the wiring 1535 may be electrically connected using a separately formed wiring.

  The antenna 1542 can be formed by a printing method, a photolithography method, an evaporation method, a droplet discharge method, or the like. In FIG. 16E, the antenna 1542 is formed using a single-layer conductive film; however, an antenna 1542 in which a plurality of conductive films are stacked can be formed. For example, the antenna 1542 may be formed by coating a wiring formed of Ni or the like with electroless plating.

  The droplet discharge method means a method of forming a predetermined pattern by discharging droplets containing a predetermined composition from the pores of the nozzle, and includes an ink jet method and the like in its category. The printing method includes a screen printing method and an offset printing method. By using a printing method or a droplet discharge method, the antenna 1542 can be formed without using an exposure mask. In addition, unlike the photolithography method, there is no waste of material that is removed by etching in the droplet discharge method and the printing method. Further, since it is not necessary to use an expensive exposure mask, the cost for manufacturing the IC tag can be suppressed.

In the case of using a droplet discharge method or various printing methods, for example, conductive particles in which Cu is coated with Ag can be used. Note that in the case where the antenna 1542 is formed by a droplet discharge method, it is preferable to perform treatment on the surface of the third interlayer insulating film 1541 so that the adhesion of the antenna 1542 is increased.

  As a method for improving the adhesion, specifically, for example, a method of attaching a metal or a metal compound capable of enhancing the adhesion of the conductive film or the insulating film to the surface of the third interlayer insulating film 1541 by catalytic action. An organic insulating film having high adhesion to the conductive film or insulating film to be formed, a method of attaching a metal or a metal compound to the surface of the third interlayer insulating film 1541, and a surface of the third interlayer insulating film 1541 Examples include a method of performing surface modification by performing plasma treatment under atmospheric pressure or reduced pressure.

  When the metal or metal compound attached to the third interlayer insulating film 1541 has conductivity, the sheet resistance is controlled so that the normal operation of the antenna is not hindered. Specifically, the average thickness of the conductive metal or metal compound is controlled to be, for example, 1 to 10 nm, or the metal or metal compound is partially or entirely insulated by oxidation. You can do it. Alternatively, the deposited metal or metal compound may be selectively removed by etching except for the region where the adhesion is desired to be improved. Alternatively, the metal or the metal compound may be selectively attached only to a specific region by using a droplet discharge method, a printing method, a sol-gel method, or the like, instead of attaching the metal or the metal compound to the entire surface of the substrate in advance. Note that the metal or metal compound does not need to be a completely continuous film on the surface of the third interlayer insulating film 1541, and may be dispersed to some extent.

  Then, as shown in FIG. 17A, after the antenna 1542 is formed, a protective layer 1545 is formed over the third interlayer insulating film 1541 so as to cover the antenna 1542. The protective layer 1545 is formed using a material that can protect the antenna 1542 when the peeling layer 1501 is removed later by etching. For example, the protective layer 1545 can be formed by applying an epoxy resin, an acrylate resin, or a silicon resin soluble in water or alcohols to the entire surface.

  Next, as shown in FIG. 17B, grooves 1546 are formed in order to separate the IC tags individually. The groove 1546 may be formed so long as the peeling layer 1501 is exposed. The groove 1546 can be formed by dicing, scribing, or the like. Note that the groove 1546 is not necessarily formed when the IC tag formed over the first substrate 1500 does not need to be separated.

Next, as illustrated in FIG. 17C, the peeling layer 1501 is removed by etching. Here, halogen fluoride is used as an etching gas, and the gas is introduced from the groove 1546. For example, ClF ₃ (chlorine trifluoride) is used, the temperature is 350 ° C., the flow rate is 300 sccm, the atmospheric pressure is 798 Pascal (798 Pa), and the treatment time is 3 hours. Further, a gas in which nitrogen is mixed with ClF ₃ gas may be used. By using halogen fluoride such as ClF ₃ , the peeling layer 1501 is selectively etched, and the first substrate 1500 can be peeled from the TFTs 1530 to 1532. The halogen fluoride may be either a gas or a liquid.

  The method for peeling the integrated circuit including the TFT from the insulating substrate is not limited to the method using etching of the amorphous silicon film as shown in this embodiment mode, and various other methods can be used. For example, if a metal oxide film is provided between a substrate having high heat resistance and an integrated circuit, the metal oxide film is weakened, and then peeled off, the integrated circuit including the TFT provided on the metal oxide film is peeled off. Can do. Further, for example, at least part of the peeling layer can be broken by laser light irradiation, and the integrated circuit including the TFT can be peeled from the substrate. Further, for example, the integrated circuit including the TFT can be separated from the substrate by mechanically deleting the substrate on which the integrated circuit including the TFT is formed or removing the substrate by etching with a solution or a gas.

  Next, as illustrated in FIG. 18A, the peeled TFTs 1530 to 1532 and the antenna 1542 are attached to the second substrate 1551 with an adhesive 1550. As the adhesive 1550, a material capable of bonding the second substrate 1551 and the base insulating film 1502 is used. As the adhesive 1550, for example, various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

  Note that the second substrate 1551 can be formed using an organic material such as flexible paper or plastic.

  Next, as illustrated in FIG. 18B, after the protective layer 1545 is removed, an adhesive 1552 is applied over the third interlayer insulating film 1541 so as to cover the antenna 1542, and a cover material 1553 is attached. The cover material 1553 can be formed using a flexible organic material such as paper or plastic similarly to the second substrate 1551. The thickness of the adhesive 1552 may be, for example, 10 to 200 μm.

  For the adhesive 1552, a material capable of bonding the cover material 1553 to the third interlayer insulating film 1541 and the antenna 1542 is used. As the adhesive 1552, for example, various curable adhesives such as a reaction curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

  The IC tag is completed through the above-described steps. By the above manufacturing method, an extremely thin integrated circuit with a total film thickness of 0.3 μm to 3 μm, typically about 2 μm, can be formed between the second substrate 1551 and the cover material 1553.

Note that the thickness of the integrated circuit includes not only the thickness of the semiconductor element itself but also the thicknesses of various insulating films and interlayer insulating films formed between the adhesive 1550 and the adhesive 1552. Further, the area occupied by the integrated circuit included in the IC tag, 5 mm square (25 mm ²⁾ or less, and more preferably may be 0.3mm square (0.09 mm ²⁾ to 4 mm square (16 mm ²⁾ degree.

  Note that this embodiment mode describes a method for separating a substrate and an integrated circuit by providing a separation layer between the first substrate 1500 having high heat resistance and the integrated circuit and removing the separation layer by etching. However, the manufacturing method of the IC tag of the present invention is not limited to this configuration. For example, a metal oxide film may be provided between a substrate having high heat resistance and the integrated circuit, and the integrated circuit may be peeled by weakening the metal oxide film by crystallization. Alternatively, a separation layer using an amorphous semiconductor film containing hydrogen is provided between a substrate with high heat resistance and an integrated circuit, and the separation layer is removed by laser light irradiation to separate the substrate and the integrated circuit. You may do it. Alternatively, the integrated circuit may be separated from the substrate by mechanically removing the highly heat-resistant substrate on which the integrated circuit is formed or removing the substrate by etching with a solution or gas.

  Note that although an example in which the antenna is formed over the same substrate as the integrated circuit has been described in this embodiment, the present invention is not limited to this structure. An antenna formed over another substrate and the integrated circuit may be bonded later to be electrically connected.

  In general, the frequency of radio waves used in RFIC is 13.56 MHz and 2.45 GHz, and it is very important to improve the versatility by forming an IC tag so that radio waves of this frequency can be detected. is important.

  In addition, the IC tag of this embodiment has an advantage that radio waves are less likely to be shielded than an RFIC formed using a semiconductor substrate, and the signal can be prevented from being attenuated by shielding the radio waves. Therefore, it is not necessary to use a semiconductor substrate, so that the cost of the IC tag can be significantly reduced.

  Note that although an example in which the integrated circuit is separated and attached to a flexible substrate is described in this embodiment, the present invention is not limited to this structure. For example, in the case where a substrate having a heat resistant temperature that can withstand heat treatment in a manufacturing process of an integrated circuit, such as a glass substrate, is used, the integrated circuit is not necessarily peeled off.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, or Embodiment Mode 5.

(Embodiment 7)
Various electronic devices can be completed using TFTs manufactured using the laser irradiation apparatus of the present invention. Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), personal computers, game devices, portable information terminals (mobile computers, mobile phones, mobile phones) Type game machine or electronic book), an image playback device (specifically, a device equipped with a display capable of playing back a recording medium such as Digital Versatile Disc (DVD) and displaying the image), etc. Is mentioned.

  By using the present invention, laser irradiation treatment can be favorably performed on a semiconductor film, so that the degree of freedom in layout and size of semiconductor elements on the substrate can be increased and the degree of integration can be improved. It becomes possible. In addition, the product quality of the manufactured semiconductor element is in a good state, and variations can be eliminated. A specific example will be described with reference to FIG.

  FIG. 19A illustrates a display device, which includes a housing 1901, a support base 1902, a display portion 1903, a speaker portion 1904, a video input terminal 1905, and the like. This display device is manufactured by using a thin film transistor formed by a manufacturing method shown in another embodiment mode for the display portion 1903 and a driver circuit. The display device includes a liquid crystal display device, a light emitting device, and the like, and specifically includes all information display devices such as a computer, a television receiver, and an advertisement display.

  FIG. 19B illustrates a computer, which includes a housing 1911, a display portion 1912, a keyboard 1913, an external connection port 1914, a pointing mouse 1915, and the like. By using the manufacturing methods described in the above embodiments, application to the display portion 1912 and other circuits is possible. Furthermore, the present invention can also be applied to semiconductor devices such as a CPU and a memory inside the main body.

FIG. 19C illustrates a mobile phone, which is a typical example of a portable information terminal. This mobile phone includes a housing 1921, a display portion 1922, a sensor portion 1924, operation keys 1923, and the like. The sensor unit 1924 includes an optical sensor element, and controls the luminance of the display unit 1922 according to the illuminance obtained by the sensor unit 1924 or controls illumination of the operation key 1923 according to the illuminance obtained by the sensor unit 1924. By doing so, the current consumption of the mobile phone can be suppressed. In the case of a mobile phone having an imaging function such as a CCD, it is detected whether or not the photographer has looked into the optical viewfinder by changing the amount of light received by the sensor unit 1924 provided near the optical viewfinder. When the photographer is looking into the optical viewfinder, power consumption can be suppressed by turning off the display portion 1922.

  Since electronic devices such as PDAs (Personal Digital Assistants, information portable terminals), digital cameras, and small game machines are portable information terminals, the display screen is small. Therefore, by forming a functional circuit such as a CPU, a memory, or a sensor using the fine transistor described in the above embodiment, the size and weight can be reduced.

In addition, a TFT formed using the laser irradiation apparatus of the present invention can also be used as a thin film integrated circuit or a non-contact thin film integrated circuit device (a wireless IC tag, also referred to as RFID (radio frequency identification)). In addition, by attaching the IC tag to various electronic devices, the distribution route of the electronic devices can be clarified.

FIG. 19D illustrates a state where the wireless IC tag 1942 is attached to the passport 1941. A wireless IC tag may be embedded in the passport 1941. Similarly, you can attach or embed a wireless IC tag to a driver's license, credit card, banknote, coin, securities, gift certificate, ticket, traveler's check (T / C), health insurance card, resident card, family register copy, etc. it can. In this case, only information indicating authenticity is input to the wireless IC tag, and an access right is set so that information cannot be read or written illegally. This can be realized by using the memory shown in another embodiment. By using it as a tag in this way, it becomes possible to distinguish it from a forged one.

In addition, a wireless IC tag can be used as a memory. FIG. 19E illustrates an example in which the wireless IC tag 1951 is used as a label attached to a vegetable package. Further, a wireless IC tag may be attached or embedded in the package itself. The wireless IC tag 1951 includes a production stage process such as production place, producer, date of manufacture, processing method, product distribution process, price, quantity, usage, shape, weight, expiration date, various authentication information, etc. Can be recorded. Information from the wireless IC tag 1951 is received and read by the antenna unit 1953 of the wireless reader 1952 and displayed on the display unit 1954 of the reader 1952 so that the wholesaler, retailer, and consumer can easily grasp the information. become. In addition, by setting access rights for each of producers, traders, and consumers, a system is incapable of reading, writing, rewriting, and erasing without access rights.

The wireless IC tag can be used as follows. At the time of accounting, the fact that accounting has been completed is entered in the wireless IC tag, and a check means is provided at the exit to check whether accounting has been written on the wireless IC tag. If you try to leave the store without checking out, an alarm will sound. This method can prevent forgetting to pay and shoplifting.

Further, in consideration of customer privacy protection, the following method can be used. At the stage of accounting at the cash register, (1) lock the data input to the wireless IC tag with a password, (2) encrypt the data itself input to the wireless IC tag, (3) wireless Either the data input to the IC tag is deleted, or (4) the data input to the wireless IC tag is destroyed. These can be realized by using the memory described in the above embodiment. Then, by providing a check means at the exit, it is checked whether any of the processes (1) to (4) has been performed, or whether the wireless IC tag data has not been processed. Check for accounting. In this way, it is possible to check whether or not there is a transaction in the store, and it is possible to prevent information on the wireless IC tag from being read outside the store against the will of the owner.

Since the wireless IC tag mentioned above has a higher manufacturing cost than a conventionally used barcode, it is necessary to reduce the cost. By using the present invention, the width of the large grain crystal region formed in one scan can be expanded, and the ratio of the boundary portion (that is, the microcrystalline region) between adjacent crystallized regions is compared with the conventional case. Therefore, the semiconductor element can be formed without waste, which is effective in reducing the cost. In addition, any wireless IC tag can be manufactured with high quality and no variation in performance.

  As described above, the applicable range of the semiconductor device manufactured according to the present invention is so wide that the semiconductor device manufactured according to the present invention can be used for electronic devices in various fields.

  This embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, or Embodiment Mode 6.

  According to the present invention, a non-linear optical element for wavelength conversion is not required, and a very high output laser beam can be obtained. Accordingly, the width of the large grain crystal region formed by one scan can be increased, and the productivity can be significantly improved.

The perspective view which shows an example of the laser irradiation apparatus of this invention. It is a figure which shows the optical system of this invention. It is the photograph figure obtained with the optical microscope. It is the photograph figure obtained by SEM. It is sectional drawing of the manufacturing process of top gate type TFT. It is sectional drawing which shows an example of TFT of a GOLD structure. It is sectional drawing which shows an example of TFT of a dual gate structure. It is a figure which shows an example of sectional drawing of a display apparatus. It is a figure which shows the top view of a display apparatus. Sectional drawing which shows the preparation processes of CPU. Sectional drawing which shows the preparation processes of CPU. Sectional drawing which shows the preparation processes of CPU. Sectional drawing which shows the preparation processes of CPU. The block diagram of CPU. Sectional drawing which shows the manufacturing process of IC tag. Sectional drawing which shows the manufacturing process of IC tag. Sectional drawing which shows the manufacturing process of IC tag. Sectional drawing which shows the manufacturing process of IC tag. FIG. 14 illustrates an example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 11 Base insulating film 12 Semiconductor film 13 having an amorphous structure Irradiation region 14 Semiconductor film 15 having a crystal structure Arrow 16 Laser beam 17 Semiconductor layer 18 Gate insulating film 19 Gate electrode 20 Source region 21 Drain region 22 Channel formation region 23 Interlayer insulating film 24 Source electrode 25 Drain electrode 26 First LDD region 27 Second LDD region 28 Protective film 29a Upper layer 29b Lower layer 30a Optical system 30b Optical system 31a Source region 31b Drain region 32 Channel formation region 33a First interlayer Insulating film 33b Second interlayer insulating film 36 First LDD region 37 Second LDD region 38a First gate insulating film 38b Second gate insulating film 39 Gate electrode 101 Laser oscillator 102 Slit 103 Mirror 104 First cylindrical Lens 105 Second cylindrical Lens 106 Semiconductor film 107 Substrate fixing stage 108 X stage 109 Y stage 110 Laser beam 111 Beam irradiation area 610 Substrate 616 Planarization insulating film 623 First electrode 624 Layer 625 containing organic compound Second electrode 626 Transparent protective layer 627 Transparent Filler 628 Sealing Material 629 Insulator 631 Anisotropic Conductive Film 632 FPC
633 Sealing substrate 636 n-channel TFT
637 p-channel TFT
710 Substrate having an insulating surface 711 Underlying insulating film 712 Lower electrode 713 First insulating film 714 Second insulating film 715 Channel forming region 716 Source region 717 Drain region 718 Second gate insulating film 719a First low-concentration impurity region 719b Second Low-concentration impurity region 720a Upper electrode upper layer 720b Upper electrode lower layer 721 Insulating film 722 Insulating film 723 Source wiring 724 Drain wiring 1201 Source side driving circuit 1202 Pixel portion 1203 Gate side driving circuit 1204 Sealing substrate 1205 Sealing material 1207 Connection Region 1208 Terminal 1209 FPC
1210 Substrate 1301 Drive IC
1302 Pixel portion 1304 Sealing substrate 1305 Sealing material 1307 Connection region 1308 Terminal portion 1309 FPC
1310 Substrate 1400 Substrate 1401 Underlying insulating film 1402 Amorphous semiconductor film 1405 Laser light 1406a Insular semiconductor layer 1406b Insular semiconductor layer 1406c Insular semiconductor layer 1406d Insular semiconductor layer 1406e Insular semiconductor layer 1408 Gate insulation Film 1409a conductive film 1409b conductive film 1410 resist mask 1413 gate length 1415 resist mask 1416a impurity region 1416b impurity region 1416c impurity region 1417 resist mask 1418a impurity region 1418b impurity region 1419a sidewall 1419b sidewall 1419c sidewall 1420a high concentration impurity region 1420b high Concentration impurity region 1420c High concentration impurity region 1421 Resist mask 1422 First interlayer insulating film 1423 Second layer Interlayer insulating film 1425a Wiring 1425b Wiring 1425c Wiring 1425d Wiring 1425e Wiring 1500 First substrate 1501 Peeling layer 1502 Underlying insulating film 1503 Semiconductor film 1504 Semiconductor film 1506 having a crystal structure Island-like semiconductor film 1507 Island-like semiconductor film 1508 Island-like Semiconductor film 1509 Gate insulating film 1510 Gate electrode 1511 Gate electrode 1512 Gate electrode 1513 Resist 1515 Resist 1516 Low concentration impurity region 1517 Low concentration impurity region 1518 Resist 1520 High concentration impurity region 1521 Insulating film 1522 Side wall 1523 Side wall 1524 Side wall 1526 Resist 1527 High-concentration impurity region 1528 High-concentration impurity region 1530 n-channel TFT
1531 p-channel TFT
1532 n-channel TFT
1533 First interlayer insulating film 1534 Second interlayer insulating film 1535 Wiring 1536 Wiring 1537 Wiring 1538 Wiring 1539 Wiring 1541 Third interlayer insulating film 1542 Antenna 1545 Protective layer 1546 Groove 1550 Adhesive 1551 Adhesive 1553 Adhesive 1553 Cover material 1600 Glass substrate 1601 Arithmetic circuit 1602 Arithmetic circuit control unit 1603 Instruction analysis unit 1604 Interrupt control unit 1605 Timing control unit 1606 Register 1607 Register control unit 1608 Bus interface 1609 ROM
1620 ROM interface 1621 CLK1
1622 CLK2
1901 Housing 1902 Support 1903 Display 1904 Speaker 1905 Video input terminal 1911 Housing 1912 Display 1913 Keyboard 1914 External connection port 1915 Pointing mouse 1921 Housing 1922 Display 1923 Operation key 1924 Sensor 1941 Passport 1942 Wireless IC tag 1951 Wireless IC tag 1952 Reader 1953 Antenna unit 1954 Display unit

Claims (17)

A first laser beam, which is a fundamental wave emitted from a laser oscillator having a laser repetition frequency of 10 MHz or more, is shaped using a condenser lens to form a second laser beam,
Irradiating the irradiation surface with the second laser beam;
A laser irradiation method, wherein the second laser beam is moved relative to the irradiation surface. A first laser beam, which is a fundamental wave emitted from a laser oscillator having a laser repetition frequency of 10 MHz or more, is shaped using a condenser lens to form a second laser beam,
Irradiating the irradiated body with the second laser beam to cause multiphoton absorption and melting,
A laser irradiation method, wherein the second laser beam is moved relative to the irradiated object.   3. The laser irradiation method according to claim 1, wherein the first laser beam oscillates with a pulse width of 1 femtosecond or more and 10 picoseconds or less. 4. The first laser beam according to claim 1, wherein the first laser beam includes Sapphire, YAG, ceramics YAG, ceramics Y to which one or more of Nd, Yb, Cr, Ti, Ho, and Er dopants are added. A laser irradiation method characterized by being a laser beam emitted from a laser oscillator having a kind of crystal selected from ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ . 5. The laser irradiation method according to claim 1, wherein a range of a peak output of the laser beam is 1 GW / cm ² or more and 1 TW / cm ² or less.   Processing a laser beam, which is a fundamental wave, into a long beam on the surface of the semiconductor, and irradiating the semiconductor surface while moving the surface of the semiconductor relative to the long beam to crystallize the semiconductor. A method for manufacturing a semiconductor device. Forming an impurity region in the semiconductor;
A laser beam, which is a fundamental wave, is processed into a long laser beam on the surface of the semiconductor, and irradiated while moving the surface of the semiconductor relative to the long laser beam. And a step of activating the semiconductor device. Forming a conductive layer on a glass substrate;
Forming an insulating layer covering the conductive layer;
Forming a semiconductor layer on the insulating layer;
Processing a laser beam that is a fundamental wave into a long laser beam on the surface of the semiconductor layer, and irradiating while moving the surface of the semiconductor layer relative to the long laser beam. A method for manufacturing a semiconductor device. 9. The method for manufacturing a semiconductor device according to claim 6, wherein the laser beam which is the fundamental wave oscillates with a pulse width of 1 femtosecond to 10 picoseconds. In any one of claims 6 to 9, a laser beam wherein a fundamental wave, Sapphire, YAG, ceramics YAG, ceramics _{Y 2 O 3, KGW, KYW} , Mg 2 SiO 4, YLF, YVO 4 or GdVO _4, A laser beam emitted from one type of laser oscillator selected from lasers obtained by adding any one or more of Nd, Yb, Cr, Ti, Ho, Er dopants to the crystal of Manufacturing method. 11. The method for manufacturing a semiconductor device according to claim 6, wherein a range of a peak output of the laser beam is 1 GW / cm ² or more and 1 TW / cm ² or less.   A laser oscillator that emits a fundamental wave, an optical member that processes a laser beam emitted from the laser oscillator into a long laser beam on an irradiation surface, and a means for moving the irradiation surface relative to the laser beam; The laser irradiation apparatus characterized by having. A laser oscillator that emits a fundamental wave, and a condenser lens that shapes a laser beam emitted from the laser oscillator,
A mechanism for projecting and irradiating the laser beam onto an irradiation surface with the condenser lens;
Means for moving the irradiation surface relative to the laser beam.   14. The laser irradiation apparatus according to claim 13, wherein the condenser lens is two convex cylindrical lenses.   15. The laser irradiation apparatus according to claim 12, wherein the laser beam emitted from the laser oscillator oscillates with a pulse width of 1 femtosecond or more and 10 picoseconds or less. In any one of claims 12 to 15, the laser beam emitted from the laser oscillator, Sapphire, YAG, ceramics YAG, ceramics _{Y 2 O 3, KGW, KYW} , Mg 2 SiO 4, YLF, YVO 4 or GdVO, A laser beam emitted from one type of laser oscillator selected from lasers in which any one or a plurality of dopants of Nd, Yb, Cr, Ti, Ho, and Er are added to the crystal ₄ Irradiation device. 17. The laser irradiation apparatus according to claim 12, wherein a range of a peak output of the laser beam is 1 GW / cm ² or more and 1 TW / cm ² or less.