JP2006128604A - 半導体レーザーダイオード - Google Patents
半導体レーザーダイオード Download PDFInfo
- Publication number
- JP2006128604A JP2006128604A JP2005097003A JP2005097003A JP2006128604A JP 2006128604 A JP2006128604 A JP 2006128604A JP 2005097003 A JP2005097003 A JP 2005097003A JP 2005097003 A JP2005097003 A JP 2005097003A JP 2006128604 A JP2006128604 A JP 2006128604A
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- JP
- Japan
- Prior art keywords
- laser diode
- frame
- semiconductor laser
- resin
- air passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】本発明は半導体レーザー素子と、上記半導体素子が上部面に搭載されるサブマウントと、上記サブマウントが搭載されるフレーム部及び上記フレーム部を固定する樹脂部を設け本体中央に挿入孔を貫通形成したホルダーに組立てられる半導体レーザーダイオードにおいて、上記フレーム部の前面には上記レーザー素子を包囲しながら出射孔を形成するよう樹脂枠を設け、上記出射孔を通して出射するレーザービームの出射軸と直交する樹脂枠には上記ホルダーとの組立の際、上記挿入孔内に少なくとも一つ以上の空気流路を形成できるよう少なくとも一つ以上の空気通路部を設けて構成される。本発明によると、ホルダーとの組立時、外部空気が内部へ流入し外部へ通過する空気流路を樹脂部との境界面に形成して発熱源を冷却させる冷却特性及び熱を外部へ放出する放熱特性を向上させることができる。
【選択図】図1
Description
115 サブマウント
120 フレーム部
120a 素子配置部
120b、120c 左右翼部
120d リードフレーム
120e 補助フレーム
130 樹脂部
130a 樹脂枠
130b 裏面樹脂
140 空気通路部
141 単一凹溝
142 分割凹溝
143 折曲型凹溝
143a 入口
143b 出口
143c 連結溝
X 出射軸
Claims (9)
- レーザー素子と、上記レーザー素子が上部面に搭載されるサブマウントと、上記サブマウントが搭載されるフレーム部と、上記フレーム部を固定する樹脂部とを設け、本体中央に挿入孔を貫通形成したホルダーに組立てられる半導体レーザーダイオードであって、
上記フレーム部の前面には、上記レーザー素子を包囲しながら出射孔を形成するように樹脂枠を設け、上記出射孔を通して出射するレーザービームの出射軸と直交する樹脂枠には、上記ホルダーとの組立時上記挿入孔内に少なくとも一つ以上の空気流路を形成し得るように少なくとも一つ以上の空気通路部を備える半導体レーザーダイオード。 - 上記空気通路部は、三角、四角などの多角断面状で形成される、請求項1に記載の半導体レーザーダイオード。
- 上記空気通路部は、弧断面状で形成される、請求項1に記載の半導体レーザーダイオード。
- 上記空気通路部は、出射軸とほぼ同一な直線型で形成される、請求項1に記載の半導体レーザーダイオード。
- 上記空気通路部は、上記出射窓の幅とほぼ同一な大きさの幅で上記樹脂枠の前面に出射軸方向へ凹設される単一凹溝で構成される、請求項1に記載の半導体レーザーダイオード。
- 上記単一凹溝の幅中心は、上記レーザー素子とほぼ同一な垂直軸上に配される、請求項5に記載の半導体レーザーダイオード。
- 上記空気通路部は、上記出射窓の幅より小さい幅で上記樹脂枠の前面に出射軸方向へ少なくとも2個以上凹設される分割凹溝で構成される、請求項1に記載の半導体レーザーダイオード。
- 上記複数個の分割凹溝のうちいずれか一つは、上記レーザー素子とほぼ同一な垂直軸上に配される、請求項7に記載の半導体レーザーダイオード。
- 上記空気通路部は、上記出射窓の幅より小さい幅を有する入口と出口とが上記樹脂枠の前面に幅方向へ凹設される連結溝を通して連結される折曲型凹溝で構成される、請求項1に記載の半導体レーザーダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040086483A KR100568321B1 (ko) | 2004-10-28 | 2004-10-28 | 반도체 레이저 다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006128604A true JP2006128604A (ja) | 2006-05-18 |
JP4465295B2 JP4465295B2 (ja) | 2010-05-19 |
Family
ID=36261999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005097003A Expired - Fee Related JP4465295B2 (ja) | 2004-10-28 | 2005-03-30 | 半導体レーザーダイオード |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060093284A1 (ja) |
JP (1) | JP4465295B2 (ja) |
KR (1) | KR100568321B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012029209A1 (ja) * | 2010-08-30 | 2012-03-08 | パナソニック株式会社 | 半導体レーザ装置および光ピックアップ装置 |
WO2014119224A1 (ja) * | 2013-01-31 | 2014-08-07 | パナソニック株式会社 | 半導体レーザ装置及びレーザユニット |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3985562B2 (ja) * | 2002-02-25 | 2007-10-03 | 株式会社日立製作所 | 光ヘッド及び光ディスク装置 |
JP6958098B2 (ja) * | 2017-08-10 | 2021-11-02 | 住友電気工業株式会社 | 光モジュール |
CN111755364B (zh) * | 2020-08-13 | 2023-04-07 | 抚州华成半导体科技有限公司 | 一种半导体二极管生产设备 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3723426B2 (ja) | 2000-07-28 | 2005-12-07 | 三洋電機株式会社 | 半導体レーザ装置 |
JP3723425B2 (ja) | 2000-07-26 | 2005-12-07 | 三洋電機株式会社 | 半導体レーザ装置 |
JP2002023028A (ja) | 2001-06-08 | 2002-01-23 | Hitachi Ltd | 光通信装置 |
JP4070969B2 (ja) | 2001-08-10 | 2008-04-02 | シャープ株式会社 | 半導体レーザ装置 |
-
2004
- 2004-10-28 KR KR1020040086483A patent/KR100568321B1/ko not_active IP Right Cessation
-
2005
- 2005-03-25 US US11/089,778 patent/US20060093284A1/en not_active Abandoned
- 2005-03-30 JP JP2005097003A patent/JP4465295B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012029209A1 (ja) * | 2010-08-30 | 2012-03-08 | パナソニック株式会社 | 半導体レーザ装置および光ピックアップ装置 |
WO2014119224A1 (ja) * | 2013-01-31 | 2014-08-07 | パナソニック株式会社 | 半導体レーザ装置及びレーザユニット |
Also Published As
Publication number | Publication date |
---|---|
JP4465295B2 (ja) | 2010-05-19 |
US20060093284A1 (en) | 2006-05-04 |
KR100568321B1 (ko) | 2006-04-05 |
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