JP2006120715A - 半導体ウェハの製造方法 - Google Patents
半導体ウェハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 193
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 230000001590 oxidative effect Effects 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 121
- 238000000034 method Methods 0.000 claims description 91
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 20
- 239000010408 film Substances 0.000 description 352
- 230000004048 modification Effects 0.000 description 37
- 238000012986 modification Methods 0.000 description 37
- 238000001020 plasma etching Methods 0.000 description 29
- 238000000137 annealing Methods 0.000 description 25
- 230000003647 oxidation Effects 0.000 description 22
- 238000007254 oxidation reaction Methods 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 239000005388 borosilicate glass Substances 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000002513 implantation Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000001459 lithography Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000010301 surface-oxidation reaction Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- -1 Oxygen ions Chemical class 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】 シリコンを含む半導体基板1上に第1マスク膜を堆積するステップ、第1マスク膜上に第2マスク膜を堆積するステップ、第2マスク膜の一部を選択的に除去し垂直側壁を有する窓部を形成するステップ、第2マスク膜をマスクとして用いて第1マスク膜の一部を選択的に除去するステップ、第1マスク膜及び第2マスク膜をマスクとして用いて半導体基板1に酸化種となるイオンを注入するステップ、第2マスク膜を除去するステップ、及び酸化雰囲気中で熱処理を行い酸化種とシリコンとの反応を用いて半導体基板1中に埋め込み酸化膜4xを形成し半導体基板1の表面に熱酸化膜を形成するステップを含む。
【選択図】 図1
Description
本発明の実施の形態の第1の変形例に係る半導体装置の製造方法を、図1、図8〜図13を用いて説明する。
本発明の実施の形態の第2の変形例に係る半導体装置の製造方法を図1、図8、図14〜図17を用いて説明する。
本発明の実施の形態の第3の変形例に係る半導体装置の製造方法を、図1、図18〜図21を用いて説明する。
本発明の実施の形態の第4の変形例に係る半導体ウェハの製造方法を、第3の変形例と同様に図1、図18〜図21を用いて説明する。
本発明の実施の形態の第5の変形例に係る半導体ウェハの製造方法は、図18〜図20の手順は第4の変形例と実質的に同様であるので、重複した説明を省略する。第5の変形例では、図20に示すように第1マスク膜2を第2マスク膜3直下に後退させた後に、酸化種の半導体基板1への供給を緩和させる多結晶SiやSiN等の絶縁膜を堆積する。そして、CDEやRIE等により、絶縁膜の一部を選択的に除去する。この結果、図22に示すように、第2マスク膜3直下に第1マスク膜2と隣接して、絶縁膜からなる埋め込みバッファ膜9が埋め込まれる。その後、SOI領域側の半導体基板1に酸化種となるO+を注入する。ここで、埋め込みバッファ膜により、自己整合的にSOI領域とバルク領域の境界部に酸化種の供給を抑制することができる。
上記のように、本発明は実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。既に述べた本発明の実施の形態においては、レジスト工程を用いて境界部のマスク膜構造を半導体ウェハ内で複数設けることで、埋め込み酸化膜4xと熱酸化膜5とが分離される境界と分離されない境界等形状の異なる境界を複数併せ持つ様にしても良い。
2…第1マスク膜
3…第2マスク膜
4…注入領域
4x…埋め込み酸化膜
5…熱酸化膜
6…第3マスク膜
7…絶縁膜
7x…側壁保護膜
8…バッファ膜
9…埋め込みバッファ膜
Claims (5)
- シリコンを含む半導体基板上に第1マスク膜を堆積するステップと、
前記第1マスク膜上に第2マスク膜を堆積するステップと、
前記第2マスク膜の一部を選択的に除去し、垂直側壁を有する窓部を形成するステップと、
前記第2マスク膜をマスクとして用いて、前記第1マスク膜の一部を選択的に除去するステップと、
前記第1マスク膜及び前記第2マスク膜をマスクとして用いて、前記窓部を介して前記半導体基板に酸化種となるイオンを注入するステップと、
前記第2マスク膜を除去するステップと、
酸化雰囲気中で熱処理を行い、前記酸化種と前記シリコンとの反応を用いて前記半導体基板中に埋め込み酸化膜を形成し、前記半導体基板の表面に熱酸化膜を形成するステップ
とを含むことを特徴とする半導体ウェハの製造方法。 - 前記第1マスク膜の一部を選択的に除去するステップは、前記第1マスク膜の一部をウェットエッチングすることを特徴とする請求項1に記載の半導体ウェハの製造方法。
- 前記窓部を形成するステップの前に、前記第2マスク膜上に第3マスク膜を形成するステップを更に含み、
前記窓部を形成するステップは、前記第3マスク膜の一部を選択的に除去することを特徴とする請求項1又は2に記載の半導体ウェハの製造方法。 - 前記第1マスク膜を堆積するステップの前に、前記半導体基板上にバッファ膜を堆積するステップを更に含むことを特徴とする請求項1〜3のいずれか1項に記載の半導体ウェハの製造方法。
- 前記第1マスク膜の一部を選択的に除去するステップは、前記第2マスク膜直下の前記第1マスク膜の一部を更に除去することを特徴とする請求項1〜4のいずれか1項に記載の半導体ウェハの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004304555A JP3998677B2 (ja) | 2004-10-19 | 2004-10-19 | 半導体ウェハの製造方法 |
US11/097,166 US20060084249A1 (en) | 2004-10-19 | 2005-04-04 | Method for manufacturing a hybrid semiconductor wafer having a buried oxide film |
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JP2004304555A JP3998677B2 (ja) | 2004-10-19 | 2004-10-19 | 半導体ウェハの製造方法 |
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JP2006120715A true JP2006120715A (ja) | 2006-05-11 |
JP3998677B2 JP3998677B2 (ja) | 2007-10-31 |
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US (1) | US20060084249A1 (ja) |
JP (1) | JP3998677B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7537989B2 (en) | 2005-11-18 | 2009-05-26 | Sumco Corporation | Method for manufacturing SOI substrate |
WO2010004619A1 (ja) * | 2008-07-08 | 2010-01-14 | 東京エレクトロン株式会社 | 半導体素子の素子分離方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072084A (ja) * | 2003-08-28 | 2005-03-17 | Toshiba Corp | 半導体装置及びその製造方法 |
US7772048B2 (en) * | 2007-02-23 | 2010-08-10 | Freescale Semiconductor, Inc. | Forming semiconductor fins using a sacrificial fin |
EP1978554A3 (en) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate comprising implantation and separation steps |
US7795114B2 (en) * | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
US8501585B2 (en) * | 2007-10-10 | 2013-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8455331B2 (en) * | 2007-10-10 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP2010239123A (ja) * | 2009-03-12 | 2010-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2011029618A (ja) * | 2009-06-25 | 2011-02-10 | Sumco Corp | Simoxウェーハの製造方法、simoxウェーハ |
US8110470B2 (en) | 2009-08-31 | 2012-02-07 | Globalfoundries Singapore Pte. Ltd. | Asymmetrical transistor device and method of fabrication |
US9269791B2 (en) * | 2012-07-10 | 2016-02-23 | United Microelectronics Corp. | Multi-gate MOSFET with embedded isolation structures |
CN103579335A (zh) * | 2012-07-25 | 2014-02-12 | 联华电子股份有限公司 | 多栅极场效晶体管及其制作工艺 |
CN104952734B (zh) * | 2015-07-16 | 2020-01-24 | 矽力杰半导体技术(杭州)有限公司 | 半导体结构及其制造方法 |
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JP3984014B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社東芝 | 半導体装置用基板を製造する方法および半導体装置用基板 |
JP4322453B2 (ja) * | 2001-09-27 | 2009-09-02 | 株式会社東芝 | 半導体装置およびその製造方法 |
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JP2003203967A (ja) * | 2001-12-28 | 2003-07-18 | Toshiba Corp | 部分soiウェーハの製造方法、半導体装置及びその製造方法 |
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-
2004
- 2004-10-19 JP JP2004304555A patent/JP3998677B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-04 US US11/097,166 patent/US20060084249A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7537989B2 (en) | 2005-11-18 | 2009-05-26 | Sumco Corporation | Method for manufacturing SOI substrate |
US7811878B2 (en) | 2005-11-18 | 2010-10-12 | Sumco Corporation | Method of manufacturing SOI substrate |
WO2010004619A1 (ja) * | 2008-07-08 | 2010-01-14 | 東京エレクトロン株式会社 | 半導体素子の素子分離方法 |
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JP3998677B2 (ja) | 2007-10-31 |
US20060084249A1 (en) | 2006-04-20 |
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