JP2006100787A5 - - Google Patents
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- Publication number
- JP2006100787A5 JP2006100787A5 JP2005204983A JP2005204983A JP2006100787A5 JP 2006100787 A5 JP2006100787 A5 JP 2006100787A5 JP 2005204983 A JP2005204983 A JP 2005204983A JP 2005204983 A JP2005204983 A JP 2005204983A JP 2006100787 A5 JP2006100787 A5 JP 2006100787A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- light
- layer
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- 239000003566 sealing material Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 229910010272 inorganic material Inorganic materials 0.000 claims 5
- 239000011147 inorganic material Substances 0.000 claims 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005204983A JP2006100787A (ja) | 2004-08-31 | 2005-07-13 | 発光装置および発光素子 |
| US11/214,018 US7453092B2 (en) | 2004-08-31 | 2005-08-30 | Light emitting device and light emitting element having predetermined optical form |
| DE102005041095A DE102005041095A1 (de) | 2004-08-31 | 2005-08-30 | Lichtemissionsvorrichtung und Lichtemissionselement |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004253447 | 2004-08-31 | ||
| JP2005204983A JP2006100787A (ja) | 2004-08-31 | 2005-07-13 | 発光装置および発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006100787A JP2006100787A (ja) | 2006-04-13 |
| JP2006100787A5 true JP2006100787A5 (OSRAM) | 2010-02-04 |
Family
ID=35941797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005204983A Pending JP2006100787A (ja) | 2004-08-31 | 2005-07-13 | 発光装置および発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7453092B2 (OSRAM) |
| JP (1) | JP2006100787A (OSRAM) |
| DE (1) | DE102005041095A1 (OSRAM) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2596948B1 (en) * | 2003-03-10 | 2020-02-26 | Toyoda Gosei Co., Ltd. | Method of making a semiconductor device |
| US20100181584A1 (en) * | 2005-07-11 | 2010-07-22 | Xiang Gao | Laser lift-off with improved light extraction |
| US8373195B2 (en) | 2006-04-12 | 2013-02-12 | SemiLEDs Optoelectronics Co., Ltd. | Light-emitting diode lamp with low thermal resistance |
| US7863639B2 (en) * | 2006-04-12 | 2011-01-04 | Semileds Optoelectronics Co. Ltd. | Light-emitting diode lamp with low thermal resistance |
| US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
| US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
| US7953293B2 (en) * | 2006-05-02 | 2011-05-31 | Ati Technologies Ulc | Field sequence detector, method and video device |
| US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
| US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
| US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| WO2008011377A2 (en) * | 2006-07-17 | 2008-01-24 | 3M Innovative Properties Company | Led package with converging extractor |
| US7439548B2 (en) * | 2006-08-11 | 2008-10-21 | Bridgelux, Inc | Surface mountable chip |
| JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| JP2008108952A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| JP2008300501A (ja) * | 2007-05-30 | 2008-12-11 | Panasonic Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
| EP2003702A1 (en) * | 2007-06-13 | 2008-12-17 | High Power Optoelectronics Inc. | Semiconductor light emitting device and method of fabricating the same |
| US7867793B2 (en) * | 2007-07-09 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Substrate removal during LED formation |
| US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US8410511B2 (en) * | 2008-10-17 | 2013-04-02 | Goldeneye, Inc. | Methods for high temperature processing of epitaxial chips |
| JP2010245481A (ja) * | 2009-04-10 | 2010-10-28 | Sharp Corp | 発光装置 |
| DE102009051746A1 (de) | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US9219206B2 (en) | 2010-01-19 | 2015-12-22 | Lg Innotek Co., Ltd. | Package and manufacturing method of the same |
| JP5446915B2 (ja) * | 2010-01-21 | 2014-03-19 | セイコーエプソン株式会社 | 生体情報検出器及び生体情報測定装置 |
| RU2525325C2 (ru) * | 2010-02-09 | 2014-08-10 | Нития Корпорейшн | Светоизлучающее устройство и способ изготовления светоизлучающего устройства |
| US8319247B2 (en) * | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
| WO2011126000A1 (ja) | 2010-04-08 | 2011-10-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP5731761B2 (ja) * | 2010-05-18 | 2015-06-10 | シチズン電子株式会社 | 発光装置 |
| CN105244422B (zh) | 2010-05-31 | 2018-09-04 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
| US10308545B2 (en) | 2010-10-26 | 2019-06-04 | Schott Ag | Highly refractive thin glasses |
| US10343946B2 (en) | 2010-10-26 | 2019-07-09 | Schott Ag | Highly refractive thin glasses |
| DE102010042945A1 (de) * | 2010-10-26 | 2012-04-26 | Schott Ag | Transparente Schichtverbunde |
| JP5002703B2 (ja) | 2010-12-08 | 2012-08-15 | 株式会社東芝 | 半導体発光素子 |
| DE102011012608A1 (de) * | 2011-02-28 | 2012-08-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Lichtauskoppelstrukturen in einem Halbleiterkörper und Licht emittierender Halbleiterkörper |
| TW201240145A (en) * | 2011-03-21 | 2012-10-01 | Walsin Lihwa Corp | Light emitting diode and method of manufacturing the same |
| KR101880445B1 (ko) * | 2011-07-14 | 2018-07-24 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛 |
| JP2013033890A (ja) * | 2011-08-03 | 2013-02-14 | Toyoda Gosei Co Ltd | 発光装置 |
| US9117941B2 (en) * | 2011-09-02 | 2015-08-25 | King Dragon International Inc. | LED package and method of the same |
| US20150001570A1 (en) * | 2011-09-02 | 2015-01-01 | King Dragon International Inc. | LED Package and Method of the Same |
| JP6119335B2 (ja) * | 2013-03-18 | 2017-04-26 | 日亜化学工業株式会社 | 発光素子保持構造体 |
| JP6147061B2 (ja) * | 2013-04-02 | 2017-06-14 | スタンレー電気株式会社 | フリップチップ型半導体発光素子、半導体装置及びその製造方法 |
| CN105428510B (zh) * | 2014-09-03 | 2018-01-30 | 展晶科技(深圳)有限公司 | 覆晶式发光二极管封装结构 |
| DE102017126268A1 (de) | 2017-11-09 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers |
| US11610868B2 (en) * | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7642549B2 (ja) | 2019-02-11 | 2025-03-10 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、光電子配置構造体および方法 |
| WO2020216549A1 (de) | 2019-04-23 | 2020-10-29 | Osram Opto Semiconductors Gmbh | Led modul, led displaymodul und verfahren zu dessen herstellung |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7071648B2 (ja) | 2019-05-16 | 2022-05-19 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| JP7594578B2 (ja) | 2019-09-20 | 2024-12-04 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、半導体構造およびそれらに関する方法 |
Family Cites Families (31)
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| DE4219287A1 (de) * | 1992-06-12 | 1993-12-16 | Merck Patent Gmbh | Anorganische Füllstoffe und organische Matrixmaterialien mit Brechungsindex-Anpassung |
| US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| US5742120A (en) * | 1996-05-10 | 1998-04-21 | Rebif Corporation | Light-emmiting diode lamp with directional coverage for the emmitted light |
| EP0921577A4 (en) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Industrial Co Ltd | LIGHT-EMITTING COMPONENT; SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD |
| US6420735B2 (en) * | 1997-05-07 | 2002-07-16 | Samsung Electronics Co., Ltd. | Surface-emitting light-emitting diode |
| JP2000031548A (ja) * | 1998-07-09 | 2000-01-28 | Stanley Electric Co Ltd | 面実装型発光ダイオードおよびその製造方法 |
| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
| DE19911717A1 (de) | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
| JP3533345B2 (ja) * | 1999-07-13 | 2004-05-31 | サンケン電気株式会社 | 半導体発光装置 |
| DE19947030A1 (de) | 1999-09-30 | 2001-04-19 | Osram Opto Semiconductors Gmbh | Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung |
| JP3455512B2 (ja) * | 1999-11-17 | 2003-10-14 | 日本碍子株式会社 | エピタキシャル成長用基板およびその製造方法 |
| AU4139101A (en) * | 1999-12-03 | 2001-06-12 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
| TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| DE10020464A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| AU2002217845A1 (en) | 2000-11-16 | 2002-05-27 | Emcore Corporation | Microelectronic package having improved light extraction |
| US6518600B1 (en) * | 2000-11-17 | 2003-02-11 | General Electric Company | Dual encapsulation for an LED |
| CN1212676C (zh) | 2001-04-12 | 2005-07-27 | 松下电工株式会社 | 使用led的光源装置及其制造方法 |
| EP1263058B1 (en) * | 2001-05-29 | 2012-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting element |
| JP4107814B2 (ja) * | 2001-07-06 | 2008-06-25 | 豊田合成株式会社 | 発光素子 |
| JP2002364323A (ja) * | 2001-06-01 | 2002-12-18 | Kawasaki Heavy Ind Ltd | 小型船舶用４サイクルエンジン |
| TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| JP4244542B2 (ja) | 2001-08-28 | 2009-03-25 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| ATE445233T1 (de) * | 2002-01-28 | 2009-10-15 | Nichia Corp | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung |
| DE20220258U1 (de) | 2002-09-20 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Halbleiterchip |
| JP4053926B2 (ja) * | 2002-05-27 | 2008-02-27 | 日亜化学工業株式会社 | 窒化物半導体発光素子とそれを用いた発光装置 |
| DE10234977A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
| US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
| DE10245628A1 (de) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
| EP2596948B1 (en) | 2003-03-10 | 2020-02-26 | Toyoda Gosei Co., Ltd. | Method of making a semiconductor device |
| WO2005091388A1 (en) * | 2004-03-18 | 2005-09-29 | Matsushita Electric Industrial Co., Ltd. | Nitride based led with a p-type injection region |
-
2005
- 2005-07-13 JP JP2005204983A patent/JP2006100787A/ja active Pending
- 2005-08-30 DE DE102005041095A patent/DE102005041095A1/de not_active Withdrawn
- 2005-08-30 US US11/214,018 patent/US7453092B2/en not_active Expired - Lifetime
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