JP2006066905A5 - - Google Patents

Download PDF

Info

Publication number
JP2006066905A5
JP2006066905A5 JP2005219984A JP2005219984A JP2006066905A5 JP 2006066905 A5 JP2006066905 A5 JP 2006066905A5 JP 2005219984 A JP2005219984 A JP 2005219984A JP 2005219984 A JP2005219984 A JP 2005219984A JP 2006066905 A5 JP2006066905 A5 JP 2006066905A5
Authority
JP
Japan
Prior art keywords
electrode
plasma
processing
plasma processing
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005219984A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006066905A (ja
JP4699127B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005219984A priority Critical patent/JP4699127B2/ja
Priority claimed from JP2005219984A external-priority patent/JP4699127B2/ja
Publication of JP2006066905A publication Critical patent/JP2006066905A/ja
Publication of JP2006066905A5 publication Critical patent/JP2006066905A5/ja
Application granted granted Critical
Publication of JP4699127B2 publication Critical patent/JP4699127B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005219984A 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP4699127B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005219984A JP4699127B2 (ja) 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004223086 2004-07-30
JP2004223086 2004-07-30
JP2005219984A JP4699127B2 (ja) 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010254528A Division JP2011082180A (ja) 2004-07-30 2010-11-15 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2006066905A JP2006066905A (ja) 2006-03-09
JP2006066905A5 true JP2006066905A5 (enExample) 2008-09-11
JP4699127B2 JP4699127B2 (ja) 2011-06-08

Family

ID=36113045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005219984A Expired - Fee Related JP4699127B2 (ja) 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP4699127B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4972327B2 (ja) * 2006-03-22 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP5461759B2 (ja) * 2006-03-22 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US7883632B2 (en) 2006-03-22 2011-02-08 Tokyo Electron Limited Plasma processing method
JP5064707B2 (ja) * 2006-03-30 2012-10-31 東京エレクトロン株式会社 プラズマ処理装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
US20080006205A1 (en) * 2006-07-10 2008-01-10 Douglas Keil Apparatus and Method for Controlling Plasma Potential
US7884025B2 (en) 2007-01-30 2011-02-08 Applied Materials, Inc. Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
US7879731B2 (en) * 2007-01-30 2011-02-01 Applied Materials, Inc. Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
JP5808697B2 (ja) * 2012-03-01 2015-11-10 株式会社日立ハイテクノロジーズ ドライエッチング装置及びドライエッチング方法
JP6078419B2 (ja) 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
US11217454B2 (en) 2019-04-22 2022-01-04 Hitachi High-Tech Corporation Plasma processing method and etching apparatus
KR102629845B1 (ko) 2020-06-16 2024-01-29 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
WO2023067767A1 (en) 2021-10-21 2023-04-27 Hitachi High-Tech Corporation Etching method and etching apparatus
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
CN117321739A (zh) 2022-04-28 2023-12-29 株式会社日立高新技术 蚀刻方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661185A (ja) * 1992-08-06 1994-03-04 Tokyo Electron Ltd プラズマ処理装置
JP4831853B2 (ja) * 1999-05-11 2011-12-07 東京エレクトロン株式会社 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Similar Documents

Publication Publication Date Title
JP2006066905A5 (enExample)
JP2007250755A5 (enExample)
KR101151419B1 (ko) Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
WO2009005148A1 (ja) 表面処理装置
TWI391035B (zh) Plasma generation device, plasma control method and substrate manufacturing method (1)
EP1973140A3 (en) Plasma species and uniformity control through pulsed VHF operation
CN101290869B (zh) 等离子体处理装置
JP2020004710A5 (enExample)
JP2008244063A5 (enExample)
WO2013148410A3 (en) Compact, configurable power supply for energizing ozone-producing cells
WO2010144555A3 (en) Adjusting current ratios in inductively coupled plasma processing systems
WO2009130165A3 (en) Electrode system for proximity detection and hand-held device with electrode system
TW201340790A (zh) 基板處理裝置
JP2007503724A5 (enExample)
CN1852764A (zh) 等离子体产生设备和方法以及具有可调占空因数的射频驱动电路
JP4699127B2 (ja) プラズマ処理装置及びプラズマ処理方法
WO2008102738A1 (ja) 真空処理装置および真空処理装置を用いた製膜方法
JP2016091829A5 (enExample)
JP2016091812A5 (enExample)
TW201207137A (en) Sputtering device
JP2010177525A5 (enExample)
CN105810547B (zh) 等离子体处理装置的阻抗匹配方法
TWI303954B (en) Apparatus and methods for a fixed impedance transformation network for use in connection with a plasma chamber
CN104654381A (zh) 半导体微波炉及用于微波炉的半导体功率源
JP2019186099A (ja) プラズマ処理装置