JP4699127B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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JP4699127B2
JP4699127B2 JP2005219984A JP2005219984A JP4699127B2 JP 4699127 B2 JP4699127 B2 JP 4699127B2 JP 2005219984 A JP2005219984 A JP 2005219984A JP 2005219984 A JP2005219984 A JP 2005219984A JP 4699127 B2 JP4699127 B2 JP 4699127B2
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plasma
upper electrode
electrode
circuit
frequency power
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JP2006066905A (ja
JP2006066905A5 (enExample
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学 岩田
地塩 輿水
陽平 山澤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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JP2005219984A 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP4699127B2 (ja)

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JP2004223086 2004-07-30
JP2005219984A JP4699127B2 (ja) 2004-07-30 2005-07-29 プラズマ処理装置及びプラズマ処理方法

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JP2010254528A Division JP2011082180A (ja) 2004-07-30 2010-11-15 プラズマ処理装置及びプラズマ処理方法

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JP2006066905A5 JP2006066905A5 (enExample) 2008-09-11
JP4699127B2 true JP4699127B2 (ja) 2011-06-08

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4972327B2 (ja) * 2006-03-22 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
US7883632B2 (en) 2006-03-22 2011-02-08 Tokyo Electron Limited Plasma processing method
JP5461759B2 (ja) * 2006-03-22 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5064707B2 (ja) * 2006-03-30 2012-10-31 東京エレクトロン株式会社 プラズマ処理装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
US20080006205A1 (en) * 2006-07-10 2008-01-10 Douglas Keil Apparatus and Method for Controlling Plasma Potential
US7879731B2 (en) * 2007-01-30 2011-02-01 Applied Materials, Inc. Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources
US8076247B2 (en) 2007-01-30 2011-12-13 Applied Materials, Inc. Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
JP5808697B2 (ja) * 2012-03-01 2015-11-10 株式会社日立ハイテクノロジーズ ドライエッチング装置及びドライエッチング方法
JP6078419B2 (ja) 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
WO2020217266A1 (ja) 2019-04-22 2020-10-29 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
WO2021255812A1 (ja) 2020-06-16 2021-12-23 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12444618B2 (en) 2021-10-21 2025-10-14 Hitachi High-Tech Corporation Etching method and etching apparatus
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661185A (ja) * 1992-08-06 1994-03-04 Tokyo Electron Ltd プラズマ処理装置
JP4831853B2 (ja) * 1999-05-11 2011-12-07 東京エレクトロン株式会社 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

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