JP2006060030A5 - - Google Patents
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- Publication number
- JP2006060030A5 JP2006060030A5 JP2004240594A JP2004240594A JP2006060030A5 JP 2006060030 A5 JP2006060030 A5 JP 2006060030A5 JP 2004240594 A JP2004240594 A JP 2004240594A JP 2004240594 A JP2004240594 A JP 2004240594A JP 2006060030 A5 JP2006060030 A5 JP 2006060030A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor substrate
- charge storage
- charge
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004240594A JP2006060030A (ja) | 2004-08-20 | 2004-08-20 | 半導体記憶装置 |
| TW094123603A TW200617969A (en) | 2004-08-20 | 2005-07-12 | Semiconductor memory device |
| US11/197,485 US7184318B2 (en) | 2004-08-20 | 2005-08-05 | Semiconductor memory device |
| US11/652,023 US7471563B2 (en) | 2004-08-20 | 2007-01-11 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004240594A JP2006060030A (ja) | 2004-08-20 | 2004-08-20 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006060030A JP2006060030A (ja) | 2006-03-02 |
| JP2006060030A5 true JP2006060030A5 (cg-RX-API-DMAC7.html) | 2007-05-10 |
Family
ID=35909435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004240594A Withdrawn JP2006060030A (ja) | 2004-08-20 | 2004-08-20 | 半導体記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7184318B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2006060030A (cg-RX-API-DMAC7.html) |
| TW (1) | TW200617969A (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006070473A1 (ja) * | 2004-12-28 | 2006-07-06 | Spansion Llc | 半導体装置及びその動作制御方法 |
| US7345917B2 (en) * | 2005-12-05 | 2008-03-18 | Macronix International Co., Ltd. | Non-volatile memory package and method of reading stored data from a non-volatile memory array |
| US7463525B2 (en) * | 2006-12-22 | 2008-12-09 | Spansion Llc | Negative wordline bias for reduction of leakage current during flash memory operation |
| KR100871606B1 (ko) | 2007-06-18 | 2008-12-02 | 삼성전자주식회사 | 비휘발성 메모리 소자의 프로그래밍 방법 및 이를 이용한낸드 플래시 메모리 소자의 구동 방법 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US8072072B2 (en) * | 2007-09-20 | 2011-12-06 | Qimonda Ag | Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit |
| US8355278B2 (en) * | 2007-10-05 | 2013-01-15 | Micron Technology, Inc. | Reducing effects of program disturb in a memory device |
| US7619933B2 (en) * | 2007-10-05 | 2009-11-17 | Micron Technology, Inc. | Reducing effects of program disturb in a memory device |
| CN101946276A (zh) * | 2007-12-13 | 2011-01-12 | 株式会社普利司通 | 信息显示面板的驱动方法和信息显示面板 |
| US7672175B2 (en) * | 2008-01-11 | 2010-03-02 | Qualcomm Incorporated | System and method of selectively applying negative voltage to wordlines during memory device read operation |
| US9461055B2 (en) * | 2014-05-16 | 2016-10-04 | Qualcomm Incorporated | Advanced metal-nitride-oxide-silicon multiple-time programmable memory |
| JP6783447B2 (ja) * | 2016-04-20 | 2020-11-11 | 株式会社フローディア | 不揮発性半導体記憶装置のデータ書き込み方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3378879B2 (ja) * | 1997-12-10 | 2003-02-17 | 松下電器産業株式会社 | 不揮発性半導体記憶装置及びその駆動方法 |
| US6521958B1 (en) * | 1999-08-26 | 2003-02-18 | Micron Technology, Inc. | MOSFET technology for programmable address decode and correction |
| JP4058219B2 (ja) | 1999-09-17 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| JP3829088B2 (ja) * | 2001-03-29 | 2006-10-04 | 株式会社東芝 | 半導体記憶装置 |
| US6754105B1 (en) * | 2003-05-06 | 2004-06-22 | Advanced Micro Devices, Inc. | Trench side wall charge trapping dielectric flash memory device |
| US7049651B2 (en) * | 2003-11-17 | 2006-05-23 | Infineon Technologies Ag | Charge-trapping memory device including high permittivity strips |
| JP2005223234A (ja) * | 2004-02-09 | 2005-08-18 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
-
2004
- 2004-08-20 JP JP2004240594A patent/JP2006060030A/ja not_active Withdrawn
-
2005
- 2005-07-12 TW TW094123603A patent/TW200617969A/zh unknown
- 2005-08-05 US US11/197,485 patent/US7184318B2/en not_active Expired - Fee Related
-
2007
- 2007-01-11 US US11/652,023 patent/US7471563B2/en not_active Expired - Fee Related