JP2006058842A - レジスト組成物およびレジストパターン形成方法 - Google Patents

レジスト組成物およびレジストパターン形成方法 Download PDF

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Publication number
JP2006058842A
JP2006058842A JP2005052032A JP2005052032A JP2006058842A JP 2006058842 A JP2006058842 A JP 2006058842A JP 2005052032 A JP2005052032 A JP 2005052032A JP 2005052032 A JP2005052032 A JP 2005052032A JP 2006058842 A JP2006058842 A JP 2006058842A
Authority
JP
Japan
Prior art keywords
group
resist composition
component
acid generator
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005052032A
Other languages
English (en)
Japanese (ja)
Inventor
Hiromitsu Tsuji
裕光 辻
Yoshiyuki Uchiumi
義之 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2005052032A priority Critical patent/JP2006058842A/ja
Priority to PCT/JP2005/011737 priority patent/WO2006008914A1/ja
Priority to TW94121941A priority patent/TWI279646B/zh
Publication of JP2006058842A publication Critical patent/JP2006058842A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005052032A 2004-07-23 2005-02-25 レジスト組成物およびレジストパターン形成方法 Pending JP2006058842A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005052032A JP2006058842A (ja) 2004-07-23 2005-02-25 レジスト組成物およびレジストパターン形成方法
PCT/JP2005/011737 WO2006008914A1 (ja) 2004-07-23 2005-06-27 レジスト組成物およびレジストパターン形成方法
TW94121941A TWI279646B (en) 2004-07-23 2005-06-29 Resist composition and process for forming resist pattern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004215404 2004-07-23
JP2005052032A JP2006058842A (ja) 2004-07-23 2005-02-25 レジスト組成物およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
JP2006058842A true JP2006058842A (ja) 2006-03-02

Family

ID=35785037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005052032A Pending JP2006058842A (ja) 2004-07-23 2005-02-25 レジスト組成物およびレジストパターン形成方法

Country Status (3)

Country Link
JP (1) JP2006058842A (zh)
TW (1) TWI279646B (zh)
WO (1) WO2006008914A1 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277219A (ja) * 2006-03-16 2007-10-25 Toyo Gosei Kogyo Kk スルホニウム塩
JP2008120700A (ja) * 2006-11-08 2008-05-29 San Apro Kk スルホニウム塩
JP2009280740A (ja) * 2008-05-23 2009-12-03 Nippon Carbide Ind Co Inc 新規な光酸発生剤及びそれを含むレジスト材料
JP2010020173A (ja) * 2008-07-11 2010-01-28 Shin-Etsu Chemical Co Ltd 化学増幅型ポジ型レジスト組成物及びパターン形成方法
US8080363B2 (en) 2007-03-20 2011-12-20 Fujifilm Corporation Resin for hydrophobitizing resist surface, method for manufacturing the resin, and positive resist composition containing the resin
US8394570B2 (en) 2008-12-04 2013-03-12 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process
US10678132B2 (en) 2007-03-14 2020-06-09 Fujifilm Corporation Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007316507A (ja) * 2006-05-29 2007-12-06 Tokyo Ohka Kogyo Co Ltd 液浸露光用レジスト組成物およびレジストパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4281152B2 (ja) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 スルホン酸オニウム塩化合物および感放射線性樹脂組成物
JP2003255542A (ja) * 2002-03-04 2003-09-10 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2003307850A (ja) * 2002-04-15 2003-10-31 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2004177486A (ja) * 2002-11-25 2004-06-24 Fuji Photo Film Co Ltd 感光性組成物及び酸発生剤
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
JP2004290276A (ja) * 2003-03-25 2004-10-21 Tokiwa Corp 化粧料容器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277219A (ja) * 2006-03-16 2007-10-25 Toyo Gosei Kogyo Kk スルホニウム塩
JP2008120700A (ja) * 2006-11-08 2008-05-29 San Apro Kk スルホニウム塩
US10678132B2 (en) 2007-03-14 2020-06-09 Fujifilm Corporation Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin
US8080363B2 (en) 2007-03-20 2011-12-20 Fujifilm Corporation Resin for hydrophobitizing resist surface, method for manufacturing the resin, and positive resist composition containing the resin
JP2009280740A (ja) * 2008-05-23 2009-12-03 Nippon Carbide Ind Co Inc 新規な光酸発生剤及びそれを含むレジスト材料
JP2010020173A (ja) * 2008-07-11 2010-01-28 Shin-Etsu Chemical Co Ltd 化学増幅型ポジ型レジスト組成物及びパターン形成方法
JP4575479B2 (ja) * 2008-07-11 2010-11-04 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びパターン形成方法
US8394570B2 (en) 2008-12-04 2013-03-12 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process

Also Published As

Publication number Publication date
TWI279646B (en) 2007-04-21
TW200606588A (en) 2006-02-16
WO2006008914A1 (ja) 2006-01-26

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