TW200606588A - Resist composition and process for forming resist pattern - Google Patents

Resist composition and process for forming resist pattern

Info

Publication number
TW200606588A
TW200606588A TW094121941A TW94121941A TW200606588A TW 200606588 A TW200606588 A TW 200606588A TW 094121941 A TW094121941 A TW 094121941A TW 94121941 A TW94121941 A TW 94121941A TW 200606588 A TW200606588 A TW 200606588A
Authority
TW
Taiwan
Prior art keywords
denotes
acid generating
resist
resist composition
forming
Prior art date
Application number
TW094121941A
Other languages
Chinese (zh)
Other versions
TWI279646B (en
Inventor
Hiromitsu Tsuji
Yoshiyuki Utsumi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200606588A publication Critical patent/TW200606588A/en
Application granted granted Critical
Publication of TWI279646B publication Critical patent/TWI279646B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The resist composition of the present invention contains, as an acid generating component (B), an onium salt type acid generating agent (B1) represented by the following general formula (b-1): [in the formula, each of R11-R13 denotes individually an aryl group or an alkyl group, at least one of the R11-R13 denotes an aryl group at least one hydrogen atom of which is substituted with an alkyl group, and Z- denotes an anion ], or an onium salt type acid generating agent having a cyclic group containing anion (B2).
TW94121941A 2004-07-23 2005-06-29 Resist composition and process for forming resist pattern TWI279646B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004215404 2004-07-23
JP2005052032A JP2006058842A (en) 2004-07-23 2005-02-25 Resist composition and method of forming resist pattern

Publications (2)

Publication Number Publication Date
TW200606588A true TW200606588A (en) 2006-02-16
TWI279646B TWI279646B (en) 2007-04-21

Family

ID=35785037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94121941A TWI279646B (en) 2004-07-23 2005-06-29 Resist composition and process for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006058842A (en)
TW (1) TWI279646B (en)
WO (1) WO2006008914A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403845B (en) * 2006-05-29 2013-08-01 Tokyo Ohka Kogyo Co Ltd Resist composition for liquid immersion lithography and resist pattern forming method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100115B2 (en) * 2006-03-16 2012-12-19 東洋合成工業株式会社 Sulfonium salt and acid generator
JP2008120700A (en) * 2006-11-08 2008-05-29 San Apro Kk Sulfonium salt
JP5401046B2 (en) 2007-03-14 2014-01-29 富士フイルム株式会社 Manufacturing method of resin for hydrophobizing resist surface, manufacturing method thereof, adjustment method of positive resist composition containing the resin, forming method of resist film, and pattern forming method
JP5186255B2 (en) 2007-03-20 2013-04-17 富士フイルム株式会社 Resin surface hydrophobizing resin, method for producing the same, and positive resist composition containing the resin
JP5522906B2 (en) * 2008-05-23 2014-06-18 日本カーバイド工業株式会社 Novel photoacid generator and resist material containing the same
JP4575479B2 (en) * 2008-07-11 2010-11-04 信越化学工業株式会社 Chemically amplified positive resist composition and pattern forming method
TWI417274B (en) 2008-12-04 2013-12-01 Shinetsu Chemical Co Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4281152B2 (en) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 Sulphonic acid onium salt compound and radiation-sensitive resin composition
JP2003255542A (en) * 2002-03-04 2003-09-10 Fuji Photo Film Co Ltd Positive photosensitive composition
JP2003307850A (en) * 2002-04-15 2003-10-31 Fuji Photo Film Co Ltd Positive resist composition
JP2004177486A (en) * 2002-11-25 2004-06-24 Fuji Photo Film Co Ltd Photosensitive composition and acid generating agent
JP4595320B2 (en) * 2002-12-10 2010-12-08 株式会社ニコン Exposure apparatus and device manufacturing method
JP2004290276A (en) * 2003-03-25 2004-10-21 Tokiwa Corp Cosmetic case

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403845B (en) * 2006-05-29 2013-08-01 Tokyo Ohka Kogyo Co Ltd Resist composition for liquid immersion lithography and resist pattern forming method

Also Published As

Publication number Publication date
JP2006058842A (en) 2006-03-02
WO2006008914A1 (en) 2006-01-26
TWI279646B (en) 2007-04-21

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