JP2006038779A - パターン形状評価方法、評価装置、及び半導体装置の製造方法 - Google Patents

パターン形状評価方法、評価装置、及び半導体装置の製造方法 Download PDF

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Publication number
JP2006038779A
JP2006038779A JP2004222737A JP2004222737A JP2006038779A JP 2006038779 A JP2006038779 A JP 2006038779A JP 2004222737 A JP2004222737 A JP 2004222737A JP 2004222737 A JP2004222737 A JP 2004222737A JP 2006038779 A JP2006038779 A JP 2006038779A
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Prior art keywords
pattern
value
series data
total value
roughness
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JP2004222737A
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English (en)
Japanese (ja)
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JP2006038779A5 (enExample
Inventor
Atsuko Yamaguchi
敦子 山口
Hiroshi Fukuda
宏 福田
Hiroki Kawada
洋揮 川田
Tatsuya Maeda
達哉 前田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004222737A priority Critical patent/JP2006038779A/ja
Priority to US11/185,852 priority patent/US7366620B2/en
Publication of JP2006038779A publication Critical patent/JP2006038779A/ja
Priority to US12/078,840 priority patent/US7684937B2/en
Publication of JP2006038779A5 publication Critical patent/JP2006038779A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/08—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H01J2237/223—Fourier techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2004222737A 2004-07-30 2004-07-30 パターン形状評価方法、評価装置、及び半導体装置の製造方法 Withdrawn JP2006038779A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004222737A JP2006038779A (ja) 2004-07-30 2004-07-30 パターン形状評価方法、評価装置、及び半導体装置の製造方法
US11/185,852 US7366620B2 (en) 2004-07-30 2005-07-21 Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
US12/078,840 US7684937B2 (en) 2004-07-30 2008-04-07 Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004222737A JP2006038779A (ja) 2004-07-30 2004-07-30 パターン形状評価方法、評価装置、及び半導体装置の製造方法

Related Child Applications (1)

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JP2007196889A Division JP2007333745A (ja) 2007-07-30 2007-07-30 パターン形状評価方法、評価装置、及び半導体装置の製造方法

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JP2006038779A true JP2006038779A (ja) 2006-02-09
JP2006038779A5 JP2006038779A5 (enExample) 2008-12-04

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US (2) US7366620B2 (enExample)
JP (1) JP2006038779A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008020735A (ja) * 2006-07-13 2008-01-31 Toshiba Corp フォトマスクの評価方法及び半導体装置の製造方法
WO2010052855A1 (ja) * 2008-11-05 2010-05-14 株式会社日立ハイテクノロジーズ パターン寸法計測方法及びそれを用いた走査電子顕微鏡
JP2011163991A (ja) * 2010-02-12 2011-08-25 Hitachi High-Technologies Corp 寸法計測装置およびこれを用いた半導体装置の製造方法
JP2015176873A (ja) * 2014-03-12 2015-10-05 株式会社東芝 シミュレーション方法、シミュレーション装置、及び、コンピュータ読み取り可能な記録媒体
WO2020066128A1 (ja) * 2018-09-25 2020-04-02 株式会社日立ハイテクノロジーズ パターン形状評価装置、パターン形状評価システム及びパターン形状評価方法
JP2020519902A (ja) * 2017-05-17 2020-07-02 アプライド マテリアルズ イスラエル リミテッド 製造プロセス欠陥を検出するための方法、コンピュータプログラム製品およびシステム
CN114359112A (zh) * 2022-03-11 2022-04-15 领伟创新智能系统(浙江)有限公司 基于加工表面图像Hoyer系数的表面粗糙度评估方法

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JP4385139B2 (ja) * 2006-02-01 2009-12-16 国立大学法人電気通信大学 変位検出方法、及び、変位検出装置、変位検出プログラム、並びに、位相特異点マッチング処理方法、位相特異点マッチング処理プログラム
SG170805A1 (en) 2006-02-09 2011-05-30 Kla Tencor Tech Corp Methods and systems for determining a characteristic of a wafer
CN101567048B (zh) * 2008-04-21 2012-06-06 夏普株式会社 图像辨别装置及图像检索装置
KR101647010B1 (ko) * 2008-06-19 2016-08-10 케이엘에이-텐코어 코오포레이션 웨이퍼의 하나 이상의 특성들을 결정하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
US8298958B2 (en) * 2008-07-17 2012-10-30 Lam Research Corporation Organic line width roughness with H2 plasma treatment
JP2010034402A (ja) * 2008-07-30 2010-02-12 Toshiba Corp パターン形状予測方法
US7879727B2 (en) * 2009-01-15 2011-02-01 Infineon Technologies Ag Method of fabricating a semiconductor device including a pattern of line segments
KR20120006492A (ko) * 2009-04-27 2012-01-18 아사히 가라스 가부시키가이샤 ＳｉＣ 피막을 갖는 반도체 열처리 부재
KR101542756B1 (ko) * 2010-05-05 2015-08-12 디지맥 코포레이션 숨겨진 이미지 시그널링
JP2014055789A (ja) * 2012-09-11 2014-03-27 Nuflare Technology Inc パターン評価方法およびパターン評価装置
JP6129651B2 (ja) * 2013-06-11 2017-05-17 株式会社日立ハイテクノロジーズ ラインパターンの形状評価方法及びその装置
US9311639B2 (en) 2014-02-11 2016-04-12 Digimarc Corporation Methods, apparatus and arrangements for device to device communication
US10648801B2 (en) 2017-04-13 2020-05-12 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US12142454B2 (en) 2017-04-13 2024-11-12 Fractilla, LLC Detection of probabilistic process windows
US10656532B2 (en) 2017-04-13 2020-05-19 Fractilia, Llc Edge detection system and its use for optical proximity correction
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US11508546B2 (en) 2017-04-13 2022-11-22 Fractilia, Llc System and method for low-noise edge detection and its use for process monitoring and control
US10664955B2 (en) 2017-04-13 2020-05-26 Fractilia, Llc Edge detection system and its use for machine learning
US11521825B2 (en) 2017-04-13 2022-12-06 Fractilia, Llc System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control
US10488188B2 (en) 2017-04-13 2019-11-26 Fractilia, Llc System and method for removing noise from roughness measurements
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11355306B2 (en) 2017-04-13 2022-06-07 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11361937B2 (en) 2017-04-13 2022-06-14 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10731979B2 (en) * 2018-01-12 2020-08-04 Applied Materials Israel Ltd. Method for monitoring nanometric structures
CN114674858B (zh) * 2022-03-14 2024-08-27 中南大学 一种三元正极材料性能指标综合评价方法及装置
CN119725324B (zh) * 2024-12-04 2025-07-04 北京智芯微电子科技有限公司 测试结构、栅极线宽粗糙度测试方法

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JP2000117483A (ja) * 1998-10-15 2000-04-25 Kobe Steel Ltd 溶接用ワイヤ

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JP4040809B2 (ja) * 1999-09-22 2008-01-30 株式会社東芝 微細パターン測定方法、微細パターン測定装置及び微細パターン測定プログラムを記録した記録媒体
JP2002243428A (ja) 2001-02-13 2002-08-28 Hitachi Ltd パターン検査方法およびその装置
JP3870044B2 (ja) 2001-07-25 2007-01-17 株式会社日立製作所 パターン検査方法及びパターン検査装置
DE10160172B4 (de) * 2001-12-07 2016-06-09 Carl Zeiss Microscopy Gmbh Laserscanningmikroskop und Laserscanningmikroskopieverfahren
JP4364524B2 (ja) 2003-02-20 2009-11-18 株式会社日立製作所 パターン検査方法
WO2005059531A1 (en) * 2003-12-10 2005-06-30 Applied Materials Israel, Ltd. Advanced roughness metrology

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Cited By (14)

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US7477406B2 (en) 2006-07-13 2009-01-13 Kabushiki Kaisha Toshiba Photomask evaluation method and manufacturing method of semiconductor device
JP2008020735A (ja) * 2006-07-13 2008-01-31 Toshiba Corp フォトマスクの評価方法及び半導体装置の製造方法
WO2010052855A1 (ja) * 2008-11-05 2010-05-14 株式会社日立ハイテクノロジーズ パターン寸法計測方法及びそれを用いた走査電子顕微鏡
JP5386502B2 (ja) * 2008-11-05 2014-01-15 株式会社日立ハイテクノロジーズ パターン寸法計測方法及びそれを用いた走査電子顕微鏡
JP2011163991A (ja) * 2010-02-12 2011-08-25 Hitachi High-Technologies Corp 寸法計測装置およびこれを用いた半導体装置の製造方法
JP2015176873A (ja) * 2014-03-12 2015-10-05 株式会社東芝 シミュレーション方法、シミュレーション装置、及び、コンピュータ読み取り可能な記録媒体
JP2020519902A (ja) * 2017-05-17 2020-07-02 アプライド マテリアルズ イスラエル リミテッド 製造プロセス欠陥を検出するための方法、コンピュータプログラム製品およびシステム
JP7159212B2 (ja) 2017-05-17 2022-10-24 アプライド マテリアルズ イスラエル リミテッド 製造プロセス欠陥を検出するための方法、コンピュータプログラム製品およびシステム
WO2020066128A1 (ja) * 2018-09-25 2020-04-02 株式会社日立ハイテクノロジーズ パターン形状評価装置、パターン形状評価システム及びパターン形状評価方法
TWI733184B (zh) * 2018-09-25 2021-07-11 日商日立全球先端科技股份有限公司 圖案形狀評價裝置、圖案形狀評價系統及圖案形狀評價方法
JP2020051771A (ja) * 2018-09-25 2020-04-02 株式会社日立ハイテクノロジーズ パターン形状評価装置、パターン形状評価システム及びパターン形状評価方法
US11713963B2 (en) 2018-09-25 2023-08-01 Hitachi High-Tech Corporation Pattern shape evaluation device, pattern shape evaluation system, and pattern shape evaluation method
CN114359112A (zh) * 2022-03-11 2022-04-15 领伟创新智能系统(浙江)有限公司 基于加工表面图像Hoyer系数的表面粗糙度评估方法
CN114359112B (zh) * 2022-03-11 2022-06-14 领伟创新智能系统(浙江)有限公司 基于加工表面图像Hoyer统计值的表面粗糙度评估方法

Also Published As

Publication number Publication date
US20060036409A1 (en) 2006-02-16
US20080215274A1 (en) 2008-09-04
US7366620B2 (en) 2008-04-29
US7684937B2 (en) 2010-03-23

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