JP2006032545A - 銅からなる配線を有する半導体装置及びその製造方法 - Google Patents
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000011229 interlayer Substances 0.000 claims abstract description 70
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 239000000460 chlorine Substances 0.000 claims abstract description 16
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
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- 238000007747 plating Methods 0.000 claims description 49
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- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 15
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- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
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- 230000000149 penetrating effect Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 4
- 238000013508 migration Methods 0.000 abstract description 9
- 230000005012 migration Effects 0.000 abstract description 9
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 239000012774 insulation material Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
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- 238000004544 sputter deposition Methods 0.000 description 6
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- 230000000694 effects Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 150000002500 ions Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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Abstract
【解決手段】 下地基板の上に、絶縁材料からなる第1の層間絶縁膜が形成されている。第1の層間絶縁膜をビアホールが貫通する。ビアホール内に、銅または銅を主成分とする合金からなる導電プラグが充填されている。第1の層間絶縁膜の上に、絶縁材料からなる第2の層間絶縁膜が形成されている。第2の層間絶縁膜に、導電プラグ上を通過して導電プラグの上面を露出させる配線溝が形成されている。配線溝内に、銅または銅を主成分とする合金からなる配線が充填されている。導電プラグ中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計が、配線中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計よりも低い。
【選択図】 図1
Description
図1に示した素子分離絶縁膜2、MOSトランジスタ3、層間絶縁膜10、保護膜11、バリアメタル層12、及び導電プラグ13は、周知のフォトリソグラフィ、エッチング、化学気相成長(CVD)、化学機械研磨(CMP)等により形成することができる。
図2(D)に示すように、層間絶縁膜21の上に、SiCからなるキャップ膜25とポーラスシリカからなる層間絶縁膜26を形成する。これらの膜の形成方法は、その下のキャップ膜20及び層間絶縁膜21の形成方法と同じである。
上記実施例では、導電プラグを形成するためのめっき液中の不純物の原子濃度を、配線を形成するためのめっき液中の不純物の原子濃度よりも低くすることにより、導電プラグの不純物濃度を配線の不純物濃度よりも低くした。その他に、同じめっき液を用いて、電解めっき中における電流の大きさを変えることによっても、めっきされた銅の不純物濃度を調節することができるであろう。
2 素子分離絶縁膜
3 MOSトランジスタ
10、15、21、26、31 層間絶縁膜
11 保護膜
12、16、22、27、32 バリアメタル層
13、23 導電プラグ
17、28、33 配線
18 下地基板
20、25、30 キャップ膜
40 ビアホール
41 配線溝
Claims (10)
- 下地基板と、
前記下地基板の上に形成された絶縁材料からなる第1の層間絶縁膜と、
前記第1の層間絶縁膜を貫通するビアホールと、
前記ビアホール内に充填された銅または銅を主成分とする合金からなる導電プラグと、
前記第1の層間絶縁膜の上に形成された絶縁材料からなる第2の層間絶縁膜と、
前記第2の層間絶縁膜に形成され、前記導電プラグ上を通過して該導電プラグの上面を露出させる配線溝と、
前記配線溝内に充填された銅または銅を主成分とする合金からなる配線と
を有し、前記導電プラグ中の銅の純度が、前記配線中の銅の純度とは異なる半導体装置。 - 下地基板と、
前記下地基板の上に形成された絶縁材料からなる第1の層間絶縁膜と、
前記第1の層間絶縁膜を貫通するビアホールと、
前記ビアホール内に充填された銅または銅を主成分とする合金からなる導電プラグと、
前記第1の層間絶縁膜の上に形成された絶縁材料からなる第2の層間絶縁膜と、
前記第2の層間絶縁膜に形成され、前記導電プラグ上を通過して該導電プラグの上面を露出させる配線溝と、
前記配線溝内に充填された銅または銅を主成分とする合金からなる配線と
を有し、前記導電プラグ中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計が、前記配線中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計よりも低い半導体装置。 - 前記配線溝の内面と前記配線との間に、銅の拡散を防止するバリアメタル層が配置されており、該バリアメタル層は、前記配線と前記導電プラグとの間にも配置されている請求項2に記載の半導体装置。
- 前記導電プラグ中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計が、前記配線中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計の1/10以下である請求項2または3に記載の半導体装置。
- 前記導電プラグ中の前記原子濃度の合計が1×1019cm−3よりも低く、前記配線中の前記原子濃度の合計が1×1019cm−3よりも高い請求項2〜4のいずれかに記載の半導体装置。
- (a)下地基板の上に、絶縁材料からなる第1の層間絶縁膜を形成する工程と、
(b)前記第1の層間絶縁膜を貫通するビアホールを形成する工程と、
(c)前記ビアホール内に、めっき法により、銅からなる導電プラグを充填する工程と、
(d)前記導電プラグが充填された前記第1の層間絶縁膜の上に、絶縁材料からなる第2の層間絶縁膜を形成する工程と、
(e)前記第2の層間絶縁膜に、前記導電プラグの上面を露出させる配線溝を形成する工程と、
(f)前記工程cで用いられるめっき液とは異なるめっき液を用いて、前記配線溝内に、銅または銅を主成分とする合金からなる配線をめっき法により充填する工程と
を有する半導体装置の製造方法。 - 前記工程fで用いられるめっき液の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計が、前記工程cで用いられるめっき液の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計よりも高い請求項6に記載の半導体装置の製造方法。
- 前記工程c及び工程fで用いられるめっき液は、前記導電プラグ中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計が、前記配線中の炭素、酸素、窒素、硫黄、及び塩素の原子濃度の合計の1/10以下になるように選択されている請求項6または7に記載の半導体装置の製造方法。
- 前記工程c及び工程fで用いられるめっき液は、前記導電プラグ中の前記原子濃度の合計が1×1019cm−3よりも低く、前記配線中の前記原子濃度の合計が1×1019cm−3よりも高くなるように選択されている請求項6〜8のいずれかに記載の半導体装置の製造方法。
- 前記工程c及び工程fで用いられるめっき液は、前記導電プラグ中の銅の純度と前記配線中の銅の純度とが異なるように選択されている請求項6に記載の半導体装置の製造方法。
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JP2004207251A JP4178295B2 (ja) | 2004-07-14 | 2004-07-14 | 銅からなる配線を有する半導体装置及びその製造方法 |
US10/995,082 US7205667B2 (en) | 2004-07-14 | 2004-11-23 | Semiconductor device having copper wiring |
TW094119613A TWI302347B (en) | 2004-07-14 | 2005-06-14 | Semiconductor device having copper wiring and its manufacture method |
KR1020050051727A KR100662071B1 (ko) | 2004-07-14 | 2005-06-16 | 구리로 이루어지는 배선을 갖는 반도체 장치 및 그 제조방법 |
CNB2005100822399A CN100420008C (zh) | 2004-07-14 | 2005-07-01 | 具有铜布线的半导体器件及其制造方法 |
EP05254190.1A EP1617469B1 (en) | 2004-07-14 | 2005-07-04 | Semiconductor device having copper wiring and its manufacturing method |
US11/714,886 US7871924B2 (en) | 2004-07-14 | 2007-03-07 | Semiconductor device having copper wiring |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007220744A (ja) * | 2006-02-14 | 2007-08-30 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US7803642B2 (en) | 2007-03-05 | 2010-09-28 | Fujitsu Semiconductor Limited | Evaluation method of semiconductor device |
US7955970B2 (en) | 2007-01-09 | 2011-06-07 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
Families Citing this family (13)
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US7345343B2 (en) * | 2005-08-02 | 2008-03-18 | Texas Instruments Incorporated | Integrated circuit having a top side wafer contact and a method of manufacture therefor |
JP4589835B2 (ja) * | 2005-07-13 | 2010-12-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
JP4485466B2 (ja) * | 2005-12-27 | 2010-06-23 | 株式会社神戸製鋼所 | 半導体装置の配線用金属薄膜及び半導体装置用配線 |
US20070257323A1 (en) * | 2006-05-05 | 2007-11-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked contact structure and method of fabricating the same |
US8030733B1 (en) | 2007-05-22 | 2011-10-04 | National Semiconductor Corporation | Copper-compatible fuse target |
US7964934B1 (en) | 2007-05-22 | 2011-06-21 | National Semiconductor Corporation | Fuse target and method of forming the fuse target in a copper process flow |
JP5180598B2 (ja) * | 2008-01-21 | 2013-04-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5310721B2 (ja) * | 2008-06-18 | 2013-10-09 | 富士通株式会社 | 半導体装置とその製造方法 |
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KR100385042B1 (ko) * | 1998-12-03 | 2003-06-18 | 인터내셔널 비지네스 머신즈 코포레이션 | 내 일렉트로 마이그레이션의 구조물을 도핑으로 형성하는 방법 |
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JP2004039916A (ja) | 2002-07-04 | 2004-02-05 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US6841458B2 (en) * | 2002-09-12 | 2005-01-11 | Intel Corporation | Dopant interface formation |
US20040155349A1 (en) * | 2003-01-07 | 2004-08-12 | Naofumi Nakamura | Semiconductor device and method of fabricating the same |
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- 2004-11-23 US US10/995,082 patent/US7205667B2/en active Active
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007220744A (ja) * | 2006-02-14 | 2007-08-30 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP4676350B2 (ja) * | 2006-02-14 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7955970B2 (en) | 2007-01-09 | 2011-06-07 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
US7803642B2 (en) | 2007-03-05 | 2010-09-28 | Fujitsu Semiconductor Limited | Evaluation method of semiconductor device |
JP5333207B2 (ja) * | 2007-03-05 | 2013-11-06 | 富士通セミコンダクター株式会社 | 拡散係数の算定方法 |
Also Published As
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CN1722428A (zh) | 2006-01-18 |
JP4178295B2 (ja) | 2008-11-12 |
US20070161242A1 (en) | 2007-07-12 |
KR100662071B1 (ko) | 2006-12-27 |
TW200605202A (en) | 2006-02-01 |
CN100420008C (zh) | 2008-09-17 |
KR20060046461A (ko) | 2006-05-17 |
US7205667B2 (en) | 2007-04-17 |
EP1617469B1 (en) | 2019-04-17 |
US20060012046A1 (en) | 2006-01-19 |
EP1617469A2 (en) | 2006-01-18 |
TWI302347B (en) | 2008-10-21 |
EP1617469A3 (en) | 2011-03-16 |
US7871924B2 (en) | 2011-01-18 |
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