JP2006013524A5

JP2006013524A5 -

Info

Publication number: JP2006013524A5
Application number: JP2005195985A
Authority: JP
Filing date: 2005-07-05
Publication date: 2010-09-09
Anticipated expiration: 2020-08-24

Claims

A plurality of first wires on the insulating surface;
A plurality of second wirings intersecting with the plurality of first wirings;
A display device having a pixel portion having a third wiring that overlaps with the plurality of first wirings and that overlaps only one of the plurality of second wirings;
One pixel in the pixel portion is
A first insulating film on one of the plurality of first wirings ;
A semiconductor film on the first insulating film;
A second insulating film on the semiconductor film;
A gate electrode electrically connected to one of the plurality of first wirings on the second insulating film;
A third insulating film on the gate electrode;
A storage capacitor region overlapping one of the plurality of first wirings and one of the plurality of second wirings;
One of the plurality of first wirings overlaps a source region, a channel formation region, and a drain region of the semiconductor film .

A plurality of first wires on the insulating surface;
A plurality of second wirings intersecting with the plurality of first wirings;
A display device having a pixel portion having a third wiring that overlaps with the plurality of first wirings and that overlaps only one of the plurality of second wirings;
One pixel in the pixel portion is
A first insulating film on one of the plurality of first wirings ;
A semiconductor film on the first insulating film;
A second insulating film on the semiconductor film;
A gate electrode electrically connected to one of the plurality of first wirings on the second insulating film;
A third insulating film on the gate electrode;
A pixel electrode on the third insulating film;
A storage capacitor region overlapping one of the plurality of first wirings and one of the plurality of second wirings;
One of the plurality of first wirings overlaps a source region, a channel formation region, and a drain region of the semiconductor film .

In claim 1 or claim 2,
The first insulating film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film,
The display device, wherein the third insulating film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film.

In any one of Claims 1 thru | or 3,
The display device, wherein the plurality of first wirings are orthogonal to the third wirings .

In any one of Claims 1 thru | or 4 ,
Wherein the plurality of first wiring display, comprising the perpendicular to the plurality of second wirings.

In any one of Claims 1 thru | or 5 ,
The gate electrode is a conductive film made of poly-Si, W, WSi _X (X = 2.0 to 2.8), Al, Ta, Cr, or Mo doped with an impurity element imparting conductivity type, or A display device comprising a film in which films selected from these conductive films are stacked.

In any one of Claims 1 thru | or 6 ,
The plurality of first wirings are made of poly-Si, W, WSi _x (X = 2.0 to 2.8), Al, Ta, Cr, or Mo doped with an impurity element imparting a conductivity type. A display device comprising a film or a film in which films selected from these conductive films are stacked.

In any one of Claims 1 thru | or 7 ,
The display device, wherein the plurality of second wirings are films mainly composed of Al, W, Ti, or TiN, or films in which films selected from these conductive films are stacked.

A plurality of scan lines on an insulating surface;
A plurality of signal lines intersecting the plurality of scanning lines;
A display device having a pixel portion having a capacitor wiring that overlaps with the plurality of scanning lines and overlaps with only one of the plurality of signal lines,
One pixel in the pixel portion is
A first insulating layer on one of the plurality of scanning lines;
A semiconductor film on the first insulating film;
A second insulating film on the semiconductor film;
A gate electrode electrically connected to one of the plurality of scanning lines on the second insulating film;
A third insulating film on the gate electrode;
One of the plurality of scanning lines and a storage capacitor region overlapping with one of the plurality of signal lines,
One of the plurality of scanning lines overlaps with a source region, a channel formation region, and a drain region of the semiconductor film.

A plurality of scan lines on an insulating surface;
A plurality of signal lines intersecting the plurality of scanning lines;
A display device having a pixel portion having a capacitor wiring that overlaps with the plurality of scanning lines and overlaps with only one of the plurality of signal lines,
One pixel in the pixel portion is
A first insulating layer on one of the plurality of scanning lines;
A semiconductor film on the first insulating film;
A second insulating film on the semiconductor film;
A gate electrode electrically connected to one of the plurality of scanning lines on the second insulating film;
A third insulating film on the gate electrode;
A pixel electrode on the third insulating film;
One of the plurality of scanning lines and a storage capacitor region overlapping with one of the plurality of signal lines,
One of the plurality of scanning lines overlaps with a source region, a channel formation region, and a drain region of the semiconductor film.

In claim 9 or claim 10,
The first insulating film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film,
The display device, wherein the third insulating film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film.

In any one of Claim 9 thru | or Claim 11
The display device, wherein the plurality of scanning lines are orthogonal to the capacitor wiring.

In any one of Claims 9-12,
The display device, wherein the plurality of scanning lines are orthogonal to the plurality of signal lines.

In any one of claims 9 to 13,
The gate electrode includes poly-Si, W, WSi doped with an impurity element imparting conductivity type. _ＸX (X = 2.0 to 2.8), a conductive film made of Al, Ta, Cr, or Mo, or a film obtained by stacking films selected from these conductive films.

In any one of claims 9 to 14,
The scanning line may be poly-Si, W, WSi doped with an impurity element imparting conductivity type. _ＸX (X = 2.0 to 2.8), a conductive film made of Al, Ta, Cr, or Mo, or a film obtained by stacking films selected from these conductive films.

In any one of Claims 9 to 15,
The display device is characterized in that the signal line is a film containing Al, W, Ti, or TiN as a main component, or a film in which films selected from these conductive films are stacked.

In any one of Claims 1 thru | or 16,
The display device, wherein the semiconductor film has an LDD region.

In any one of Claims 1 thru | or 17,
The display device, wherein the channel formation region includes boron.

In any one of Claims 1 thru / or Claim 18,
A display device comprising a drive circuit on the insulating surface, wherein the drive circuit comprises a CMOS circuit.

In claim 19,
The display device, wherein the driving circuit includes a scanning line driving circuit having a shift register, and a signal line driving circuit having a shift register and a sample hold circuit.

A liquid crystal display device using the display device according to any one of claims 1 to 20 .

A projector using the display device according to any one of claims 1 to 20.

23. A player using a personal computer, a video camera, a mobile computer, a goggle type display, or a storage medium, wherein the display unit is configured by the display device according to any one of claims 1 to 22 .