JP2006013034A - Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 - Google Patents
Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 Download PDFInfo
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- JP2006013034A JP2006013034A JP2004186191A JP2004186191A JP2006013034A JP 2006013034 A JP2006013034 A JP 2006013034A JP 2004186191 A JP2004186191 A JP 2004186191A JP 2004186191 A JP2004186191 A JP 2004186191A JP 2006013034 A JP2006013034 A JP 2006013034A
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- Prior art keywords
- light
- layer
- electrode
- group iii
- iii nitride
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- -1 nitride compound Chemical class 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010931 gold Substances 0.000 claims abstract description 19
- 229910052737 gold Inorganic materials 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 9
- 239000010948 rhodium Substances 0.000 claims abstract description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 11
- 238000005275 alloying Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 138
- 239000010408 film Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018949 PtAu Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004186191A JP2006013034A (ja) | 2004-06-24 | 2004-06-24 | Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004186191A JP2006013034A (ja) | 2004-06-24 | 2004-06-24 | Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006013034A true JP2006013034A (ja) | 2006-01-12 |
| JP2006013034A5 JP2006013034A5 (enExample) | 2006-11-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004186191A Withdrawn JP2006013034A (ja) | 2004-06-24 | 2004-06-24 | Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 |
Country Status (1)
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|---|---|
| JP (1) | JP2006013034A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008031339A1 (en) * | 2006-09-07 | 2008-03-20 | Hongkong Applied Science And Technology Research Institute Co., Ltd | Light emitting diode device, and manufacture and use thereof |
| JP2008218440A (ja) * | 2007-02-09 | 2008-09-18 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP2008226866A (ja) * | 2007-02-13 | 2008-09-25 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP2008244425A (ja) * | 2007-02-21 | 2008-10-09 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| WO2010073539A1 (ja) * | 2008-12-25 | 2010-07-01 | 昭和電工株式会社 | 半導体発光素子及び半導体発光素子の製造方法、ランプ |
| CN101814567A (zh) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | 半导体发光器件 |
| CN102017196A (zh) * | 2008-04-21 | 2011-04-13 | Lg伊诺特有限公司 | 半导体发光器件 |
| JP2014022607A (ja) * | 2012-07-19 | 2014-02-03 | Rohm Co Ltd | 発光素子、発光素子ユニットおよび発光素子パッケージ |
| CN118867082A (zh) * | 2024-09-05 | 2024-10-29 | 江西乾照光电有限公司 | 一种led芯片及其制备方法、照明设备 |
-
2004
- 2004-06-24 JP JP2004186191A patent/JP2006013034A/ja not_active Withdrawn
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7800122B2 (en) | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
| WO2008031339A1 (en) * | 2006-09-07 | 2008-03-20 | Hongkong Applied Science And Technology Research Institute Co., Ltd | Light emitting diode device, and manufacture and use thereof |
| JP2008218440A (ja) * | 2007-02-09 | 2008-09-18 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP2008226866A (ja) * | 2007-02-13 | 2008-09-25 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP2008244425A (ja) * | 2007-02-21 | 2008-10-09 | Mitsubishi Chemicals Corp | ＧａＮ系ＬＥＤ素子および発光装置 |
| CN103400917A (zh) * | 2008-04-21 | 2013-11-20 | Lg伊诺特有限公司 | 半导体发光器件 |
| CN102017196A (zh) * | 2008-04-21 | 2011-04-13 | Lg伊诺特有限公司 | 半导体发光器件 |
| EP2270880A4 (en) * | 2008-04-21 | 2011-11-30 | Lg Innotek Co Ltd | LIGHT-EMITTING SEMICONDUCTOR ELEMENT |
| US8120053B2 (en) | 2008-04-21 | 2012-02-21 | Lg Innotek Co., Ltd. | Semiconductor light emitting device |
| US8319244B2 (en) | 2008-04-21 | 2012-11-27 | Lg Innotek Co., Ltd. | Semiconductor light emitting device |
| US8466485B2 (en) | 2008-04-21 | 2013-06-18 | Lg Innotek Co., Ltd. | Semiconductor light emitting device |
| WO2010073539A1 (ja) * | 2008-12-25 | 2010-07-01 | 昭和電工株式会社 | 半導体発光素子及び半導体発光素子の製造方法、ランプ |
| US8969905B2 (en) | 2008-12-25 | 2015-03-03 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp |
| CN101814567A (zh) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | 半导体发光器件 |
| JP2014022607A (ja) * | 2012-07-19 | 2014-02-03 | Rohm Co Ltd | 発光素子、発光素子ユニットおよび発光素子パッケージ |
| CN118867082A (zh) * | 2024-09-05 | 2024-10-29 | 江西乾照光电有限公司 | 一种led芯片及其制备方法、照明设备 |
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