JP2005534150A5 - - Google Patents

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Publication number
JP2005534150A5
JP2005534150A5 JP2004523453A JP2004523453A JP2005534150A5 JP 2005534150 A5 JP2005534150 A5 JP 2005534150A5 JP 2004523453 A JP2004523453 A JP 2004523453A JP 2004523453 A JP2004523453 A JP 2004523453A JP 2005534150 A5 JP2005534150 A5 JP 2005534150A5
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JP
Japan
Prior art keywords
antenna
passive
field
antenna device
passive antenna
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JP2004523453A
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English (en)
Japanese (ja)
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JP4928077B2 (ja
JP2005534150A (ja
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Priority claimed from US10/200,833 external-priority patent/US6842147B2/en
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Publication of JP2005534150A publication Critical patent/JP2005534150A/ja
Publication of JP2005534150A5 publication Critical patent/JP2005534150A5/ja
Application granted granted Critical
Publication of JP4928077B2 publication Critical patent/JP4928077B2/ja
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JP2004523453A 2002-07-22 2003-07-17 プラズマ処理の均一性を改善する方法、プラズマ処理装置ならびにこれに用いるアンテナ装置 Expired - Lifetime JP4928077B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/200,833 US6842147B2 (en) 2002-07-22 2002-07-22 Method and apparatus for producing uniform processing rates
US10/200,833 2002-07-22
PCT/US2003/022206 WO2004010457A1 (en) 2002-07-22 2003-07-17 Method and apparatus for producing uniform processing rates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011279987A Division JP2012104496A (ja) 2002-07-22 2011-12-21 均一な処理レートを作る方法および装置

Publications (3)

Publication Number Publication Date
JP2005534150A JP2005534150A (ja) 2005-11-10
JP2005534150A5 true JP2005534150A5 (enExample) 2006-08-31
JP4928077B2 JP4928077B2 (ja) 2012-05-09

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ID=30769568

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004523453A Expired - Lifetime JP4928077B2 (ja) 2002-07-22 2003-07-17 プラズマ処理の均一性を改善する方法、プラズマ処理装置ならびにこれに用いるアンテナ装置
JP2011279987A Withdrawn JP2012104496A (ja) 2002-07-22 2011-12-21 均一な処理レートを作る方法および装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011279987A Withdrawn JP2012104496A (ja) 2002-07-22 2011-12-21 均一な処理レートを作る方法および装置

Country Status (9)

Country Link
US (1) US6842147B2 (enExample)
EP (1) EP1540694B1 (enExample)
JP (2) JP4928077B2 (enExample)
KR (1) KR100974844B1 (enExample)
CN (3) CN102573265B (enExample)
AU (1) AU2003256565A1 (enExample)
IL (1) IL166342A (enExample)
TW (1) TWI327875B (enExample)
WO (1) WO2004010457A1 (enExample)

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JP5639866B2 (ja) * 2010-12-03 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104684235B (zh) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 一种电感线圈组及电感耦合等离子体处理装置
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
US10297457B2 (en) 2015-03-19 2019-05-21 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108271309B (zh) * 2016-12-30 2020-05-01 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置
JP2021527534A (ja) * 2018-06-17 2021-10-14 スコープ マグネティック レゾナンス テクノロジーズ アーゲーＳｋｏｐｅ Ｍａｇｎｅｔｉｃ Ｒｅｓｏｎａｎｃｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 磁気共鳴（ｍｒ）用途のためのシース波バリア
US11078570B2 (en) * 2018-06-29 2021-08-03 Lam Research Corporation Azimuthal critical dimension non-uniformity for double patterning process
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TW202230440A (zh) * 2020-10-06 2022-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理用線圈
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
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CN115238541B (zh) * 2022-07-06 2025-08-19 南华大学 一种应用于玄龙-50装置的双鞍型天线的设计方法
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KR102874571B1 (ko) * 2023-11-20 2025-10-22 충남대학교산학협력단 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템

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