IL166342A - Method and device for the production of uniform processing rates - Google Patents
Method and device for the production of uniform processing ratesInfo
- Publication number
- IL166342A IL166342A IL166342A IL16634205A IL166342A IL 166342 A IL166342 A IL 166342A IL 166342 A IL166342 A IL 166342A IL 16634205 A IL16634205 A IL 16634205A IL 166342 A IL166342 A IL 166342A
- Authority
- IL
- Israel
- Prior art keywords
- antenna
- passive
- field
- passive antenna
- field distribution
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 123
- 238000000034 method Methods 0.000 title claims description 49
- 238000009826 distribution Methods 0.000 claims description 114
- 230000001939 inductive effect Effects 0.000 claims description 68
- 230000000694 effects Effects 0.000 claims description 28
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 16
- 230000001965 increasing effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 230000005672 electromagnetic field Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000003094 perturbing effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/29—Combinations of different interacting antenna units for giving a desired directional characteristic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/200,833 US6842147B2 (en) | 2002-07-22 | 2002-07-22 | Method and apparatus for producing uniform processing rates |
| PCT/US2003/022206 WO2004010457A1 (en) | 2002-07-22 | 2003-07-17 | Method and apparatus for producing uniform processing rates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL166342A0 IL166342A0 (en) | 2006-01-16 |
| IL166342A true IL166342A (en) | 2009-08-03 |
Family
ID=30769568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL166342A IL166342A (en) | 2002-07-22 | 2005-01-17 | Method and device for the production of uniform processing rates |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6842147B2 (enExample) |
| EP (1) | EP1540694B1 (enExample) |
| JP (2) | JP4928077B2 (enExample) |
| KR (1) | KR100974844B1 (enExample) |
| CN (3) | CN102573265B (enExample) |
| AU (1) | AU2003256565A1 (enExample) |
| IL (1) | IL166342A (enExample) |
| TW (1) | TWI327875B (enExample) |
| WO (1) | WO2004010457A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200253559Y1 (ko) * | 2001-07-30 | 2001-11-22 | 주식회사 플라즈마트 | 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조 |
| JP2003323997A (ja) * | 2002-04-30 | 2003-11-14 | Lam Research Kk | プラズマ安定化方法およびプラズマ装置 |
| KR100486724B1 (ko) * | 2002-10-15 | 2005-05-03 | 삼성전자주식회사 | 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
| US20050205211A1 (en) * | 2004-03-22 | 2005-09-22 | Vikram Singh | Plasma immersion ion implantion apparatus and method |
| KR100968132B1 (ko) * | 2008-02-29 | 2010-07-06 | (주)얼라이드 테크 파인더즈 | 안테나 및 이를 구비한 반도체 장치 |
| US8298949B2 (en) | 2009-01-07 | 2012-10-30 | Lam Research Corporation | Profile and CD uniformity control by plasma oxidation treatment |
| JP5506826B2 (ja) * | 2009-02-10 | 2014-05-28 | ヘリッセン，サール | 大面積プラズマ処理装置 |
| US9337004B2 (en) * | 2009-04-06 | 2016-05-10 | Lam Research Corporation | Grounded confinement ring having large surface area |
| JP5592098B2 (ja) * | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5757710B2 (ja) * | 2009-10-27 | 2015-07-29 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8741097B2 (en) | 2009-10-27 | 2014-06-03 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US9313872B2 (en) * | 2009-10-27 | 2016-04-12 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US8608903B2 (en) * | 2009-10-27 | 2013-12-17 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP5451324B2 (ja) * | 2009-11-10 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5723130B2 (ja) | 2010-09-28 | 2015-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5916044B2 (ja) * | 2010-09-28 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5639866B2 (ja) * | 2010-12-03 | 2014-12-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10271416B2 (en) * | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
| US20130256271A1 (en) * | 2012-04-03 | 2013-10-03 | Theodoros Panagopoulos | Methods and apparatuses for controlling plasma in a plasma processing chamber |
| JP6248562B2 (ja) * | 2013-11-14 | 2017-12-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| CN104684235B (zh) * | 2013-11-28 | 2017-07-07 | 中微半导体设备(上海)有限公司 | 一种电感线圈组及电感耦合等离子体处理装置 |
| CN105719928A (zh) * | 2014-12-03 | 2016-06-29 | 中微半导体设备(上海)有限公司 | Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法 |
| JP6603999B2 (ja) * | 2015-02-13 | 2019-11-13 | 日新電機株式会社 | プラズマ処理装置 |
| US10297457B2 (en) | 2015-03-19 | 2019-05-21 | Mattson Technology, Inc. | Controlling azimuthal uniformity of etch process in plasma processing chamber |
| JP6053881B2 (ja) * | 2015-07-15 | 2016-12-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10128083B2 (en) * | 2016-06-01 | 2018-11-13 | Vebco Instruments Inc. | Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas |
| US9899193B1 (en) * | 2016-11-02 | 2018-02-20 | Varian Semiconductor Equipment Associates, Inc. | RF ion source with dynamic volume control |
| CN108271309B (zh) * | 2016-12-30 | 2020-05-01 | 中微半导体设备(上海)股份有限公司 | 一种电感耦合等离子处理装置 |
| JP2021527534A (ja) * | 2018-06-17 | 2021-10-14 | スコープ マグネティック レゾナンス テクノロジーズ アーゲーＳｋｏｐｅ Ｍａｇｎｅｔｉｃ Ｒｅｓｏｎａｎｃｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | 磁気共鳴（ｍｒ）用途のためのシース波バリア |
| US11078570B2 (en) * | 2018-06-29 | 2021-08-03 | Lam Research Corporation | Azimuthal critical dimension non-uniformity for double patterning process |
| GB2590613B (en) * | 2019-12-16 | 2023-06-07 | Dyson Technology Ltd | Method and apparatus for use in generating plasma |
| GB2590614B (en) * | 2019-12-16 | 2022-09-28 | Dyson Technology Ltd | Method and apparatus for use in generating plasma |
| TW202230440A (zh) * | 2020-10-06 | 2022-08-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理用線圈 |
| JP7515423B2 (ja) * | 2021-01-22 | 2024-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置の異常検知方法及びプラズマ処理装置 |
| CN114845453A (zh) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | Icp反应装置和icp发生器 |
| CN114599142A (zh) * | 2022-03-07 | 2022-06-07 | 盛吉盛(宁波)半导体科技有限公司 | 等离子体调节装置、方法、生成装置和半导体加工装置 |
| CN115238541B (zh) * | 2022-07-06 | 2025-08-19 | 南华大学 | 一种应用于玄龙-50装置的双鞍型天线的设计方法 |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
| KR102874571B1 (ko) * | 2023-11-20 | 2025-10-22 | 충남대학교산학협력단 | 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| US5731565A (en) * | 1995-07-27 | 1998-03-24 | Lam Research Corporation | Segmented coil for generating plasma in plasma processing equipment |
| US5907221A (en) * | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
| US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5897712A (en) * | 1996-07-16 | 1999-04-27 | Applied Materials, Inc. | Plasma uniformity control for an inductive plasma source |
| US6177646B1 (en) * | 1997-03-17 | 2001-01-23 | Matsushita Electric Industrial Co, Ltd. | Method and device for plasma treatment |
| US6237526B1 (en) * | 1999-03-26 | 2001-05-29 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| US6310577B1 (en) * | 1999-08-24 | 2001-10-30 | Bethel Material Research | Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power |
| US6320320B1 (en) * | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
| US6341574B1 (en) * | 1999-11-15 | 2002-01-29 | Lam Research Corporation | Plasma processing systems |
| US6508198B1 (en) * | 2000-05-11 | 2003-01-21 | Applied Materials Inc. | Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer |
| US6414648B1 (en) * | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
| JP2003234338A (ja) * | 2002-02-08 | 2003-08-22 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
-
2002
- 2002-07-22 US US10/200,833 patent/US6842147B2/en not_active Expired - Lifetime
-
2003
- 2003-07-17 CN CN201110437893.2A patent/CN102573265B/zh not_active Expired - Lifetime
- 2003-07-17 KR KR1020057001224A patent/KR100974844B1/ko not_active Expired - Lifetime
- 2003-07-17 JP JP2004523453A patent/JP4928077B2/ja not_active Expired - Lifetime
- 2003-07-17 CN CN200810178065XA patent/CN101460002B/zh not_active Expired - Lifetime
- 2003-07-17 CN CN038225794A patent/CN1689132B/zh not_active Expired - Lifetime
- 2003-07-17 WO PCT/US2003/022206 patent/WO2004010457A1/en not_active Ceased
- 2003-07-17 AU AU2003256565A patent/AU2003256565A1/en not_active Abandoned
- 2003-07-17 EP EP03765610.5A patent/EP1540694B1/en not_active Expired - Lifetime
- 2003-07-22 TW TW092120008A patent/TWI327875B/zh not_active IP Right Cessation
-
2005
- 2005-01-17 IL IL166342A patent/IL166342A/en not_active IP Right Cessation
-
2011
- 2011-12-21 JP JP2011279987A patent/JP2012104496A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20040085246A1 (en) | 2004-05-06 |
| TWI327875B (en) | 2010-07-21 |
| US6842147B2 (en) | 2005-01-11 |
| CN102573265A (zh) | 2012-07-11 |
| CN101460002A (zh) | 2009-06-17 |
| IL166342A0 (en) | 2006-01-16 |
| CN1689132B (zh) | 2010-06-16 |
| KR20050025975A (ko) | 2005-03-14 |
| JP4928077B2 (ja) | 2012-05-09 |
| CN1689132A (zh) | 2005-10-26 |
| WO2004010457A1 (en) | 2004-01-29 |
| TW200405768A (en) | 2004-04-01 |
| KR100974844B1 (ko) | 2010-08-11 |
| CN101460002B (zh) | 2012-07-04 |
| EP1540694A1 (en) | 2005-06-15 |
| JP2005534150A (ja) | 2005-11-10 |
| JP2012104496A (ja) | 2012-05-31 |
| CN102573265B (zh) | 2016-01-20 |
| EP1540694B1 (en) | 2015-11-11 |
| AU2003256565A1 (en) | 2004-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |