AU2003256565A1 - Method and apparatus for producing uniform processing rates - Google Patents

Method and apparatus for producing uniform processing rates

Info

Publication number
AU2003256565A1
AU2003256565A1 AU2003256565A AU2003256565A AU2003256565A1 AU 2003256565 A1 AU2003256565 A1 AU 2003256565A1 AU 2003256565 A AU2003256565 A AU 2003256565A AU 2003256565 A AU2003256565 A AU 2003256565A AU 2003256565 A1 AU2003256565 A1 AU 2003256565A1
Authority
AU
Australia
Prior art keywords
uniform processing
processing rates
producing uniform
producing
rates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003256565A
Other languages
English (en)
Inventor
Andrew D. Bailey Iii
Arthur M. Howald
Andreas Kuthi
Mark Henry Wilcoxson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2003256565A1 publication Critical patent/AU2003256565A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/29—Combinations of different interacting antenna units for giving a desired directional characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
AU2003256565A 2002-07-22 2003-07-17 Method and apparatus for producing uniform processing rates Abandoned AU2003256565A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/200,833 US6842147B2 (en) 2002-07-22 2002-07-22 Method and apparatus for producing uniform processing rates
US10/200,833 2002-07-22
PCT/US2003/022206 WO2004010457A1 (en) 2002-07-22 2003-07-17 Method and apparatus for producing uniform processing rates

Publications (1)

Publication Number Publication Date
AU2003256565A1 true AU2003256565A1 (en) 2004-02-09

Family

ID=30769568

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003256565A Abandoned AU2003256565A1 (en) 2002-07-22 2003-07-17 Method and apparatus for producing uniform processing rates

Country Status (9)

Country Link
US (1) US6842147B2 (enExample)
EP (1) EP1540694B1 (enExample)
JP (2) JP4928077B2 (enExample)
KR (1) KR100974844B1 (enExample)
CN (3) CN102573265B (enExample)
AU (1) AU2003256565A1 (enExample)
IL (1) IL166342A (enExample)
TW (1) TWI327875B (enExample)
WO (1) WO2004010457A1 (enExample)

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JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
JP5506826B2 (ja) * 2009-02-10 2014-05-28 ヘリッセン，サール 大面積プラズマ処理装置
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5723130B2 (ja) 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5639866B2 (ja) * 2010-12-03 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104684235B (zh) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 一种电感线圈组及电感耦合等离子体处理装置
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
US10297457B2 (en) 2015-03-19 2019-05-21 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108271309B (zh) * 2016-12-30 2020-05-01 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置
JP2021527534A (ja) * 2018-06-17 2021-10-14 スコープ マグネティック レゾナンス テクノロジーズ アーゲーＳｋｏｐｅ Ｍａｇｎｅｔｉｃ Ｒｅｓｏｎａｎｃｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 磁気共鳴（ｍｒ）用途のためのシース波バリア
US11078570B2 (en) * 2018-06-29 2021-08-03 Lam Research Corporation Azimuthal critical dimension non-uniformity for double patterning process
GB2590613B (en) * 2019-12-16 2023-06-07 Dyson Technology Ltd Method and apparatus for use in generating plasma
GB2590614B (en) * 2019-12-16 2022-09-28 Dyson Technology Ltd Method and apparatus for use in generating plasma
TW202230440A (zh) * 2020-10-06 2022-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理用線圈
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
CN114845453A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 Icp反应装置和icp发生器
CN114599142A (zh) * 2022-03-07 2022-06-07 盛吉盛(宁波)半导体科技有限公司 等离子体调节装置、方法、生成装置和半导体加工装置
CN115238541B (zh) * 2022-07-06 2025-08-19 南华大学 一种应用于玄龙-50装置的双鞍型天线的设计方法
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
KR102874571B1 (ko) * 2023-11-20 2025-10-22 충남대학교산학협력단 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템

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US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5897712A (en) * 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
US6177646B1 (en) * 1997-03-17 2001-01-23 Matsushita Electric Industrial Co, Ltd. Method and device for plasma treatment
US6237526B1 (en) * 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6310577B1 (en) * 1999-08-24 2001-10-30 Bethel Material Research Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6508198B1 (en) * 2000-05-11 2003-01-21 Applied Materials Inc. Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置

Also Published As

Publication number Publication date
US20040085246A1 (en) 2004-05-06
TWI327875B (en) 2010-07-21
US6842147B2 (en) 2005-01-11
CN102573265A (zh) 2012-07-11
CN101460002A (zh) 2009-06-17
IL166342A0 (en) 2006-01-16
CN1689132B (zh) 2010-06-16
KR20050025975A (ko) 2005-03-14
JP4928077B2 (ja) 2012-05-09
CN1689132A (zh) 2005-10-26
WO2004010457A1 (en) 2004-01-29
IL166342A (en) 2009-08-03
TW200405768A (en) 2004-04-01
KR100974844B1 (ko) 2010-08-11
CN101460002B (zh) 2012-07-04
EP1540694A1 (en) 2005-06-15
JP2005534150A (ja) 2005-11-10
JP2012104496A (ja) 2012-05-31
CN102573265B (zh) 2016-01-20
EP1540694B1 (en) 2015-11-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase