CN102573265B - 用于产生均匀的处理速率的方法和设备 - Google Patents

用于产生均匀的处理速率的方法和设备 Download PDF

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Publication number
CN102573265B
CN102573265B CN201110437893.2A CN201110437893A CN102573265B CN 102573265 B CN102573265 B CN 102573265B CN 201110437893 A CN201110437893 A CN 201110437893A CN 102573265 B CN102573265 B CN 102573265B
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China
Prior art keywords
antenna
radio
frequency
passive
passive antenna
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Expired - Lifetime
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CN201110437893.2A
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English (en)
Chinese (zh)
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CN102573265A (zh
Inventor
A·M·霍瓦尔德
A·库蒂
M·H·维尔科克森
A·D·拜利三世
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/29—Combinations of different interacting antenna units for giving a desired directional characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201110437893.2A 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备 Expired - Lifetime CN102573265B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/200,833 US6842147B2 (en) 2002-07-22 2002-07-22 Method and apparatus for producing uniform processing rates
US10/200833 2002-07-22
CN038225794A CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN038225794A Division CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Publications (2)

Publication Number Publication Date
CN102573265A CN102573265A (zh) 2012-07-11
CN102573265B true CN102573265B (zh) 2016-01-20

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Family Applications (3)

Application Number Title Priority Date Filing Date
CN201110437893.2A Expired - Lifetime CN102573265B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN200810178065XA Expired - Lifetime CN101460002B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN038225794A Expired - Lifetime CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN200810178065XA Expired - Lifetime CN101460002B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN038225794A Expired - Lifetime CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Country Status (9)

Country Link
US (1) US6842147B2 (enExample)
EP (1) EP1540694B1 (enExample)
JP (2) JP4928077B2 (enExample)
KR (1) KR100974844B1 (enExample)
CN (3) CN102573265B (enExample)
AU (1) AU2003256565A1 (enExample)
IL (1) IL166342A (enExample)
TW (1) TWI327875B (enExample)
WO (1) WO2004010457A1 (enExample)

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JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
JP5506826B2 (ja) * 2009-02-10 2014-05-28 ヘリッセン，サール 大面積プラズマ処理装置
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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JP5639866B2 (ja) * 2010-12-03 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104684235B (zh) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 一种电感线圈组及电感耦合等离子体处理装置
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
US10297457B2 (en) 2015-03-19 2019-05-21 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108271309B (zh) * 2016-12-30 2020-05-01 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置
JP2021527534A (ja) * 2018-06-17 2021-10-14 スコープ マグネティック レゾナンス テクノロジーズ アーゲーＳｋｏｐｅ Ｍａｇｎｅｔｉｃ Ｒｅｓｏｎａｎｃｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 磁気共鳴（ｍｒ）用途のためのシース波バリア
US11078570B2 (en) * 2018-06-29 2021-08-03 Lam Research Corporation Azimuthal critical dimension non-uniformity for double patterning process
GB2590613B (en) * 2019-12-16 2023-06-07 Dyson Technology Ltd Method and apparatus for use in generating plasma
GB2590614B (en) * 2019-12-16 2022-09-28 Dyson Technology Ltd Method and apparatus for use in generating plasma
TW202230440A (zh) * 2020-10-06 2022-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理用線圈
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
CN114845453A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 Icp反应装置和icp发生器
CN114599142A (zh) * 2022-03-07 2022-06-07 盛吉盛(宁波)半导体科技有限公司 等离子体调节装置、方法、生成装置和半导体加工装置
CN115238541B (zh) * 2022-07-06 2025-08-19 南华大学 一种应用于玄龙-50装置的双鞍型天线的设计方法
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KR102874571B1 (ko) * 2023-11-20 2025-10-22 충남대학교산학협력단 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템

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Also Published As

Publication number Publication date
US20040085246A1 (en) 2004-05-06
TWI327875B (en) 2010-07-21
US6842147B2 (en) 2005-01-11
CN102573265A (zh) 2012-07-11
CN101460002A (zh) 2009-06-17
IL166342A0 (en) 2006-01-16
CN1689132B (zh) 2010-06-16
KR20050025975A (ko) 2005-03-14
JP4928077B2 (ja) 2012-05-09
CN1689132A (zh) 2005-10-26
WO2004010457A1 (en) 2004-01-29
IL166342A (en) 2009-08-03
TW200405768A (en) 2004-04-01
KR100974844B1 (ko) 2010-08-11
CN101460002B (zh) 2012-07-04
EP1540694A1 (en) 2005-06-15
JP2005534150A (ja) 2005-11-10
JP2012104496A (ja) 2012-05-31
EP1540694B1 (en) 2015-11-11
AU2003256565A1 (en) 2004-02-09

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