JP2005530346A - 半導体ポリマーフィルムを備えたメモリ素子 - Google Patents
半導体ポリマーフィルムを備えたメモリ素子 Download PDFInfo
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- JP2005530346A JP2005530346A JP2004514136A JP2004514136A JP2005530346A JP 2005530346 A JP2005530346 A JP 2005530346A JP 2004514136 A JP2004514136 A JP 2004514136A JP 2004514136 A JP2004514136 A JP 2004514136A JP 2005530346 A JP2005530346 A JP 2005530346A
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- 230000008646 thermal stress Effects 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
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Abstract
Description
Claims (16)
- 第1の面(121、221、321、421、521)及び第2の面(122、222、322、422、522)を有する第1の半導体ポリマーフィルム(120、220、320、420、520、)を形成する手段であって、前記第1の半導体ポリマーフィルムが有機ドーパント(112、412)を含む、手段と、
前記第1の半導体ポリマー層の前記第1の面に結合している実質的に互いに平行な第1の複数の導電体(130、230、330、430、530)と、
前記第1の半導体ポリマー層の前記第2の面に、前記第1の複数の導電体と実質的に互いに直交するように結合している、実質的に互いに平行な第2の複数の導電体(140、240、340、440、540)と、
を含んで成り、前記有機ドーパントに電荷が局在している、メモリ素子(100、300、400、500、800、900)。 - 第1の面(217、317)及び第2の面(218、318)を有する基材(216、316)であって、前記第2の複数の導電体が前記基材の前記第1の面の上に配置されている、基材(216、316)と、
前記基材の前記第2の面に配置されている、実質的に互いに平行な第3の複数の導電体(250)と、
有機ドーパントを含み且つ第1の面(225)及び第2の面(226)を有し、前記第1の面が前記第3の複数の導電体に結合している、第2の半導体ポリマーフィルム(224)と、
前記第2の半導体ポリマー層の前記第2の面に、前記第3の複数の導電体と実質的に互いに直交するように結合されている、実質的に互いに平行な第4の複数の導電体(260)と、
をさらに含む、請求項1に記載のメモリ素子。 - 有機ドーパントを含み、第1の面(525)及び第2の面(526)を有する第2の半導体ポリマーフィルム(524)であって、前記第2の半導体ポリマーフィルムの第2の面が前記第1の複数の導電体に電気的に接続されている、第2の半導体ポリマーフィルム(524)と、
前記第2の半導体ポリマー層の前記第1の面に、前記第2の複数の導電体と実質的に互いに直交するように結合している、実質的に互いに平行な第3の複数の導電体(560)と、
をさらに含む、請求項1に記載のメモリ素子。 - ポリマーフィルム側及び導電体側を有する絶縁体薄膜(470)をさらに含む請求項1に記載のメモリ素子であって、前記絶縁体薄膜の前記ポリマーフィルム側が前記第1の半導体ポリマーフィルムに結合し、前記絶縁体薄膜の前記導電体側が前記第1の複数の導電体に結合している、メモリ素子。
- 前記第1の半導体ポリマー層が、約0.1重量パーセント〜約50重量パーセントの範囲にて有機ドーパントを含む、請求項1に記載のメモリ素子。
- 前記半導体ポリマーフィルム内で局在した電荷を生成する手段と、
分極電流の過渡応答を測定する手段と、
前記局在した電荷を消去する手段と、
をさらに含む、請求項1に記載のメモリ素子。 - 前記有機ドーパントが、アリールアルカン、アリールアミン、ベンジジン、エナミン、ピラゾリン(pyrzoline)、ヒドラゾン(hydrazone)、オキシジアゾール、トリアゾール、オキサゾール、複合フタロシアニン、ポリシリレン、ポリゲルミレン、フルオレノン、ジフェノキノン、スルホン、アントラキノン、オキサジアゾール、及びこれらの混合物から成る群から選択される、請求項1に記載のメモリ素子。
- メモリ素子を製造する方法であって、 第1の面及び第2の面を有する第1の半導体ポリマーフィルムを作製すること(1094)であって、前記第1の半導体ポリマーフィルムが有機ドーパントを含み、前記第1の半導体ポリマーフィルム内に電荷が局在しており、
前記第1の半導体ポリマー層の前記第1の面に電気的に接続された、実質的に互いに平行な第1の複数の導電体を作製すること(1093)、及び
前記第1の半導体ポリマー層の前記第2の面に前記第1の複数の導電体と実質的に互いに直交するように電気的に接続された、実質的に互いに平行な第2の複数の導電体を作製すること(1098)、
を包含する、方法。 - 第1の面及び第2の面を有する基材を作製すること(1092)であって、前記第2の複数の導電体が前記基材の前記第1の面の上に配置されており、
前記基材の前記第2の面の上に配置された、実質的に互いに平行な第3の複数の導電体を作製すること、
前記基材の前記第2の面に配置され、且つ前記第3の複数の導電体に電気的に接続されている、第1の面及び第2の面を有する第2の半導体ポリマーフィルムを製造することであって、前記第2の半導体ポリマーフィルムが有機ドーパントを含み、及び
前記第2の半導体ポリマー層の前記第2の面に、前記第3の複数の導電体に実質的に互いに直交するよう電気的に接続された、実質的に互いに平行な第4の複数の導電体を作製すること、
をさらに含む、請求項8に記載の方法。 - 第1の面及び第2の面を有する第2の半導体ポリマーフィルムを作製することであって、前記第2の半導体ポリマーフィルムの前記第2の面が前記第1の複数の導電体に電気的に接続されており、前記第2の半導体ポリマーフィルムが有機ドーパントを含んでおり、
前記第2の半導体ポリマーフィルムの前記第1の面に、前記第1の複数の導電体と実質的に互いに直交するよう電気的に接続された、実質的に互いに平行な第3の複数の導電体を作製すること、
をさらに含む、請求項8に記載の方法。 - ポリマーフィルム側及び導電体側を有する絶縁体層を形成することをさらに含む請求項8に記載の方法であって、前記絶縁体層の前記ポリマーフィルム側が前記第1の半導体ポリマーフィルムに結合し、前記絶縁体層の前記導電体側が前記第1の複数の導電体と接触している、方法。
- 請求項9に記載の方法によって製造したメモリ素子。
- メモリ素子を使用する方法であって、
第1の面及び第2の面を有する半導体ポリマーフィルム内部に電荷を注入すること(1146)であって、前記半導体ポリマーフィルムが有機ドーパントを含み、
前記半導体ポリマーフィルム内の前記電荷を測定すること(1147)、及び
前記半導体ポリマーフィルム内の前記電荷を消去すること(1148)、
を含む、方法。 - 電荷を測定することが、さらに、前記半導体ポリマーフィルムの前記第1の面と前記第2の面の間に、所定の時間の所定の大きさの電圧パルスを適用し、分極電流の過渡応答を測定することを含む、請求項13に記載の方法。
- 電荷を注入することが、さらに、前記半導体ポリマーフィルムの前記第1の面と前記第2の面の間に、書き込み時間且つ書き込み強度にて、書き込み極性を有する電圧を適用することを含む、請求項13に記載の方法。
- 電荷を消去することが、さらに、前記半導体ポリマーフィルムの前記第1の面と前記第2の面の間に、消去時間且つ消去強度にて、消去極性を有する電圧を適用することを含む、請求項13に記載の方法。
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US10/171,738 US6828685B2 (en) | 2002-06-14 | 2002-06-14 | Memory device having a semiconducting polymer film |
PCT/US2003/016596 WO2003107426A1 (en) | 2002-06-14 | 2003-05-28 | Memory device having a semiconducting polymer film |
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WO2003107426A1 (en) | 2003-12-24 |
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KR100976661B1 (ko) | 2010-08-24 |
US7612369B2 (en) | 2009-11-03 |
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