FR2898910B1 - Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin - Google Patents

Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin

Info

Publication number
FR2898910B1
FR2898910B1 FR0602539A FR0602539A FR2898910B1 FR 2898910 B1 FR2898910 B1 FR 2898910B1 FR 0602539 A FR0602539 A FR 0602539A FR 0602539 A FR0602539 A FR 0602539A FR 2898910 B1 FR2898910 B1 FR 2898910B1
Authority
FR
France
Prior art keywords
thin film
application process
molecular materials
film application
novel thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0602539A
Other languages
English (en)
Other versions
FR2898910A1 (fr
Inventor
Azzedine Bousseksou
Gabor Molnar
Saioa Cobo
Lionel Salmon
Cabezos Jose Antonio Real
Christophe Jean Francois Vieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0602539A priority Critical patent/FR2898910B1/fr
Priority to PCT/FR2007/000297 priority patent/WO2007107644A1/fr
Priority to US12/294,090 priority patent/US8247038B2/en
Publication of FR2898910A1 publication Critical patent/FR2898910A1/fr
Application granted granted Critical
Publication of FR2898910B1 publication Critical patent/FR2898910B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/005—Thin magnetic films, e.g. of one-domain structure organic or organo-metallic films, e.g. monomolecular films obtained by Langmuir-Blodgett technique, graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
FR0602539A 2006-03-23 2006-03-23 Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin Active FR2898910B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0602539A FR2898910B1 (fr) 2006-03-23 2006-03-23 Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin
PCT/FR2007/000297 WO2007107644A1 (fr) 2006-03-23 2007-02-19 Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin
US12/294,090 US8247038B2 (en) 2006-03-23 2007-02-19 Process for the application of spin transition molecular materials in thin layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0602539A FR2898910B1 (fr) 2006-03-23 2006-03-23 Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin

Publications (2)

Publication Number Publication Date
FR2898910A1 FR2898910A1 (fr) 2007-09-28
FR2898910B1 true FR2898910B1 (fr) 2008-06-20

Family

ID=37617463

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0602539A Active FR2898910B1 (fr) 2006-03-23 2006-03-23 Nouveau procede d'application en couche mince de materiaux moleculaires a transition de spin

Country Status (3)

Country Link
US (1) US8247038B2 (fr)
FR (1) FR2898910B1 (fr)
WO (1) WO2007107644A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2829293B1 (fr) 2001-08-31 2003-11-14 Centre Nat Rech Scient Memoire moleculaire et son procede de fabrication
FR2937561B1 (fr) * 2008-10-23 2010-12-31 Centre Nat Rech Scient Procede de delimitation d'une aire de sport ou de jeu au moyen d'un materiau a transition de spin thermochrome
FR2952371B1 (fr) 2009-11-12 2012-08-10 Centre Nat Rech Scient Materiaux a transition de spin thermochromes dopes par un ou plusieurs agents fluorescents
US10224576B2 (en) * 2014-09-25 2019-03-05 Tdk Corporation Gas detection material, gas detection tape and lithium ion secondary battery
AT517850B1 (de) * 2016-02-15 2017-05-15 Technische Universität Wien Verfahren zum Beschichten von Metalloberflächen
JP6645307B2 (ja) * 2016-03-28 2020-02-14 Tdk株式会社 ガス検知器およびガス検知器を備えた電気化学素子
CN110176254B (zh) * 2019-04-19 2020-12-29 北京大学（天津滨海）新一代信息技术研究院 一种基于分子自旋态的磁场调控存储器件及数据存储方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US7078113B2 (en) * 2001-08-29 2006-07-18 The University Of Southern California Organic light emitting devices having carrier transporting layers comprising metal complexes
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JPWO2004073079A1 (ja) * 2003-02-14 2006-06-01 富士電機ホールディングス株式会社 スイッチング素子
CA2587051A1 (fr) * 2004-10-28 2006-05-11 The Regents Of The University Of California Film mince organique-complexe pour applications de memoire remanente

Also Published As

Publication number Publication date
US8247038B2 (en) 2012-08-21
US20090291328A1 (en) 2009-11-26
FR2898910A1 (fr) 2007-09-28
WO2007107644A1 (fr) 2007-09-27

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