JP2005518614A5 - - Google Patents

Download PDF

Info

Publication number
JP2005518614A5
JP2005518614A5 JP2003572051A JP2003572051A JP2005518614A5 JP 2005518614 A5 JP2005518614 A5 JP 2005518614A5 JP 2003572051 A JP2003572051 A JP 2003572051A JP 2003572051 A JP2003572051 A JP 2003572051A JP 2005518614 A5 JP2005518614 A5 JP 2005518614A5
Authority
JP
Japan
Prior art keywords
workpiece
crystalline
ion beam
sample
crystal structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003572051A
Other languages
English (en)
Japanese (ja)
Other versions
JP4737933B2 (ja
JP2005518614A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/005251 external-priority patent/WO2003073448A2/en
Publication of JP2005518614A publication Critical patent/JP2005518614A/ja
Publication of JP2005518614A5 publication Critical patent/JP2005518614A5/ja
Application granted granted Critical
Publication of JP4737933B2 publication Critical patent/JP4737933B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003572051A 2002-02-22 2003-02-24 加工工程のモニタおよび制御システムおよび制御方法 Expired - Lifetime JP4737933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35922202P 2002-02-22 2002-02-22
US60/359,222 2002-02-22
PCT/US2003/005251 WO2003073448A2 (en) 2002-02-22 2003-02-24 Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device

Publications (3)

Publication Number Publication Date
JP2005518614A JP2005518614A (ja) 2005-06-23
JP2005518614A5 true JP2005518614A5 (enExample) 2006-03-30
JP4737933B2 JP4737933B2 (ja) 2011-08-03

Family

ID=27766053

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003572051A Expired - Lifetime JP4737933B2 (ja) 2002-02-22 2003-02-24 加工工程のモニタおよび制御システムおよび制御方法
JP2003572079A Pending JP2005518552A (ja) 2002-02-22 2003-02-24 二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2003572079A Pending JP2005518552A (ja) 2002-02-22 2003-02-24 二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御

Country Status (6)

Country Link
US (1) US7972440B2 (enExample)
JP (2) JP4737933B2 (enExample)
KR (3) KR100979071B1 (enExample)
AU (2) AU2003225728A1 (enExample)
GB (2) GB2405745A (enExample)
WO (2) WO2003073448A2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100665709B1 (ko) 2001-04-26 2007-01-10 피닉스코리아 주식회사 힌지장치
US7342225B2 (en) * 2002-02-22 2008-03-11 Agere Systems, Inc. Crystallographic metrology and process control
US8615314B1 (en) * 2004-09-02 2013-12-24 Advanced Micro Devices, Inc. Process control using analysis of an upstream process
FR2875053A1 (fr) 2004-09-07 2006-03-10 St Microelectronics Sa Circuit integre comprenant des lignes de cuivre et procede de formation de lignes de cuivre
US7495231B2 (en) * 2005-09-08 2009-02-24 Agilent Technologies, Inc. MALDI sample plate imaging workstation
GB0520829D0 (en) * 2005-10-13 2005-11-23 Univ Cambridge Tech Image processing methods and apparatus
US7964422B1 (en) * 2005-11-01 2011-06-21 Nvidia Corporation Method and system for controlling a semiconductor fabrication process
US20070239305A1 (en) * 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
JP5165878B2 (ja) * 2006-10-20 2013-03-21 東京エレクトロン株式会社 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体
KR100980603B1 (ko) * 2008-01-28 2010-09-07 재단법인서울대학교산학협력재단 순차적 사슬형태의 단일클래스 분류기를 이용한 공정이상검출 방법
DE102008035165A1 (de) * 2008-07-28 2010-02-11 Ellcie Maintenance Gmbh Elektronenmikroskop
DE102008035163B4 (de) * 2008-07-28 2013-12-12 Ellcie Industries Gmbh Elektronenmikroskop
JP5595054B2 (ja) * 2010-01-29 2014-09-24 株式会社日立ハイテクサイエンス 電子顕微鏡及び試料分析方法
CN102490120B (zh) * 2011-11-29 2013-10-09 清华大学 用于化学机械抛光机的自适应逆控制系统
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US8963206B2 (en) * 2012-08-27 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for increasing fin density
JP6261178B2 (ja) * 2013-03-27 2018-01-17 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、荷電粒子ビーム装置を用いた試料の加工方法、及び荷電粒子ビーム装置を用いた試料の加工コンピュータプログラム
KR102410666B1 (ko) 2015-01-09 2022-06-20 삼성전자주식회사 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법
US20160380045A1 (en) * 2015-06-25 2016-12-29 Tivra Corporation Crystalline semiconductor growth on amorphous and poly-crystalline substrates
US9846933B2 (en) * 2015-11-16 2017-12-19 General Electric Company Systems and methods for monitoring components
CN106392233B (zh) * 2016-12-06 2018-08-14 兰州大学 一种电镜原位加热装置结合焊料的纳米焊接方法
US20190287762A1 (en) * 2018-01-25 2019-09-19 Fei Company System and method of preparing integrated circuits for backside probing using charged particle beams
IL319057A (en) * 2018-07-13 2025-04-01 Asml Netherlands Bv SEM image enhancement systems and methods
CN117001534A (zh) * 2018-09-24 2023-11-07 应用材料公司 以机器视觉作为对cmp工艺控制算法的输入
IL317072A (en) 2018-12-31 2025-01-01 Asml Netherlands Bv Fully automated SEM sampling system for E-beam image enhancement
CN110712094B (zh) * 2019-09-06 2021-07-23 中国兵器科学研究院宁波分院 降低离子束抛光光学元件表面污染的方法
JP7188373B2 (ja) * 2019-12-11 2022-12-13 トヨタ自動車株式会社 データ解析システム及びデータ解析方法
CN111421390B (zh) * 2020-02-29 2021-10-12 湖南大学 一种制造微纳米台阶阵列结构的离子束抛光加工方法
JP2021138572A (ja) * 2020-03-05 2021-09-16 住友金属鉱山株式会社 情報処理装置、情報処理方法およびプログラム
EP4172560A4 (en) 2020-06-29 2024-05-29 Applied Materials, Inc. LAYER THICKNESS ESTIMATION FROM MACHINE LEARNING-BASED PROCESSING OF SUBSTRATE IMAGES
WO2022064573A1 (ja) * 2020-09-23 2022-03-31 三菱重工業株式会社 敵対的生成ネットワークを用いた生産条件生成システム、及びその生産条件生成方法並びに生産条件生成プログラム
CN112484922A (zh) * 2020-11-13 2021-03-12 北京北方华创微电子装备有限公司 一种工艺腔室漏率检测方法、半导体工艺设备
EP4292115A4 (en) * 2021-02-15 2025-06-25 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
KR102924593B1 (ko) * 2023-02-03 2026-02-06 권용은 표준 시료를 포함하는 xrd 보정 분석 홀더
WO2025255680A1 (en) * 2024-06-14 2025-12-18 Vuereal Inc. An automated ai-based wet etching for micro leds

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649556A (en) * 1982-09-24 1987-03-10 Northwestern University Method and apparatus for the "on-line", nondestructive measurement and control of grain size in materials
JPH0751478B2 (ja) * 1989-11-24 1995-06-05 新技術事業団 化合物結晶のエピタキシャル成長方法
ES2112853T3 (es) 1990-10-10 1998-04-16 Honeywell Inc Identificacion de sistemas de proceso.
US5293216A (en) * 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
JPH0737821A (ja) * 1993-07-20 1995-02-07 Hitachi Ltd 薄膜製造装置及び半導体装置の製造方法
JP3258821B2 (ja) * 1994-06-02 2002-02-18 三菱電機株式会社 微小異物の位置決め方法、分析方法、これに用いる分析装置およびこれを用いた半導体素子もしくは液晶表示素子の製法
US5466934A (en) * 1995-01-18 1995-11-14 Adams; Brent L. Method and apparatus for identification of crystallographic defects
JP2813147B2 (ja) * 1995-02-14 1998-10-22 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
US5763325A (en) * 1995-07-04 1998-06-09 Fujitsu Limited Fabrication process of a semiconductor device using a slurry containing manganese oxide
US5557104A (en) * 1995-10-24 1996-09-17 Texsem Laboratories, Inc. Method and apparatus for determining crystallographic characteristics in response to confidence factors
JPH10239254A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 粒子散乱分析方法及び装置，並びに半導体装置の製造方法
JP3141845B2 (ja) * 1998-06-19 2001-03-07 住友金属工業株式会社 単結晶の製造方法
US6298470B1 (en) * 1999-04-15 2001-10-02 Micron Technology, Inc. Method for efficient manufacturing of integrated circuits
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6511898B1 (en) * 2000-05-24 2003-01-28 Advanced Micro Devices Inc. Method for controlling deposition parameters based on polysilicon grain size feedback
US6625512B1 (en) * 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
KR20030035637A (ko) * 2001-11-01 2003-05-09 제일모직주식회사 구리배선 연마용 ｃｍｐ 슬러리
US6825467B2 (en) * 2002-06-25 2004-11-30 Agere Systems, Inc. Apparatus for scanning a crystalline sample and associated methods

Similar Documents

Publication Publication Date Title
TWI743626B (zh) 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
JP4737933B2 (ja) 加工工程のモニタおよび制御システムおよび制御方法
JP2016015315A5 (ja) 画像蓄積方法及び走査型顕微鏡
JP2008524634A5 (enExample)
JPWO2020090962A5 (enExample)
DE102007049135A1 (de) Prozessüberwachung und Materialcharakterisierung mittels optischer Emissionsspektroskopie
JP2021064606A5 (enExample)
JP2020535391A (ja) Ｘ線依拠計量用高輝度クリーンｘ線源
JP2007245235A5 (enExample)
JP2609594B2 (ja) 欠陥検査装置
WO2022084364A1 (de) Verfahren und vorrichtung zur additiven herstellung eines werkstücks
US12117401B2 (en) Auto-focussing LIBS system
JP2019129072A (ja) 走査電子顕微鏡および測定方法
JP2000079114A5 (enExample)
CN120468202B (zh) 一种岩石微观力学性质的确定方法、装置及设备
Alexandrov et al. Further progress for a fast scanning of nuclear emulsions with Large Angle Scanning System
JPH11330186A5 (enExample)
Selvaraj et al. Prognostics, health assessment, and modelling of material removal rate by EDM for al 6061 and AISI 304 via cockroach swarm and fruit fly optimization approaches
WO2024142316A1 (ja) 集束イオンビーム装置
US11114276B2 (en) Apparatus, method, and program for processing and observing cross section, and method of measuring shape
JP7695673B2 (ja) 欠陥判定装置
WO2025263212A1 (ja) 位置特定方法、位置特定装置および位置特定プログラム
JP6789657B2 (ja) 棒材の計数装置及び棒材の計数方法
JP4487859B2 (ja) 電子ビーム制御方法およびその装置
Mukhtar et al. Image Simulation and Analysis to Predict the Sensitivity Performance of a Multi-Electron Beam Wafer Defect Inspection Tool