KR100979071B1 - 이중 배향 다결정성 재료의 화학 기계적 연마 - Google Patents

이중 배향 다결정성 재료의 화학 기계적 연마 Download PDF

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Publication number
KR100979071B1
KR100979071B1 KR1020030011008A KR20030011008A KR100979071B1 KR 100979071 B1 KR100979071 B1 KR 100979071B1 KR 1020030011008 A KR1020030011008 A KR 1020030011008A KR 20030011008 A KR20030011008 A KR 20030011008A KR 100979071 B1 KR100979071 B1 KR 100979071B1
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South Korea
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slurry
polarity
component
water
main carrier
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20030069892A (ko
Inventor
안토넬마이클
안토넬제니퍼에이.
하우즈에릭초
메이나드라이언케이쓰
심슨다렐엘.
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에이저 시스템즈 인크
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Publication of KR20030069892A publication Critical patent/KR20030069892A/ko
Application granted granted Critical
Publication of KR100979071B1 publication Critical patent/KR100979071B1/ko
Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electron Sources, Ion Sources (AREA)
  • General Factory Administration (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020030011008A 2002-02-22 2003-02-21 이중 배향 다결정성 재료의 화학 기계적 연마 Expired - Fee Related KR100979071B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35922202P 2002-02-22 2002-02-22
US60/359,222 2002-02-22
US10/121,370 2002-04-12

Publications (2)

Publication Number Publication Date
KR20030069892A KR20030069892A (ko) 2003-08-27
KR100979071B1 true KR100979071B1 (ko) 2010-08-31

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KR1020030011008A Expired - Fee Related KR100979071B1 (ko) 2002-02-22 2003-02-21 이중 배향 다결정성 재료의 화학 기계적 연마
KR20047013133A Withdrawn KR20040088517A (ko) 2002-02-22 2003-02-24 결정학적 도량형학 및 공정 제어
KR1020047013135A Expired - Lifetime KR100979658B1 (ko) 2002-02-22 2003-02-24 스캐닝 전자 현미경 및 포커싱된 이온 빔 디바이스를 사용하는 반도체 제조 프로세스의 제어

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR20047013133A Withdrawn KR20040088517A (ko) 2002-02-22 2003-02-24 결정학적 도량형학 및 공정 제어
KR1020047013135A Expired - Lifetime KR100979658B1 (ko) 2002-02-22 2003-02-24 스캐닝 전자 현미경 및 포커싱된 이온 빔 디바이스를 사용하는 반도체 제조 프로세스의 제어

Country Status (6)

Country Link
US (1) US7972440B2 (enExample)
JP (2) JP4737933B2 (enExample)
KR (3) KR100979071B1 (enExample)
AU (2) AU2003225728A1 (enExample)
GB (2) GB2405745A (enExample)
WO (2) WO2003073448A2 (enExample)

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US7171247B2 (en) 2001-04-26 2007-01-30 Phoenix Korea Co., Ltd. Hinge device

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US20070239305A1 (en) * 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
JP5165878B2 (ja) * 2006-10-20 2013-03-21 東京エレクトロン株式会社 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体
KR100980603B1 (ko) * 2008-01-28 2010-09-07 재단법인서울대학교산학협력재단 순차적 사슬형태의 단일클래스 분류기를 이용한 공정이상검출 방법
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CN102490120B (zh) * 2011-11-29 2013-10-09 清华大学 用于化学机械抛光机的自适应逆控制系统
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US8963206B2 (en) * 2012-08-27 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for increasing fin density
JP6261178B2 (ja) * 2013-03-27 2018-01-17 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、荷電粒子ビーム装置を用いた試料の加工方法、及び荷電粒子ビーム装置を用いた試料の加工コンピュータプログラム
KR102410666B1 (ko) 2015-01-09 2022-06-20 삼성전자주식회사 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법
US20160380045A1 (en) * 2015-06-25 2016-12-29 Tivra Corporation Crystalline semiconductor growth on amorphous and poly-crystalline substrates
US9846933B2 (en) * 2015-11-16 2017-12-19 General Electric Company Systems and methods for monitoring components
CN106392233B (zh) * 2016-12-06 2018-08-14 兰州大学 一种电镜原位加热装置结合焊料的纳米焊接方法
US20190287762A1 (en) * 2018-01-25 2019-09-19 Fei Company System and method of preparing integrated circuits for backside probing using charged particle beams
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CN117001534A (zh) * 2018-09-24 2023-11-07 应用材料公司 以机器视觉作为对cmp工艺控制算法的输入
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CN110712094B (zh) * 2019-09-06 2021-07-23 中国兵器科学研究院宁波分院 降低离子束抛光光学元件表面污染的方法
JP7188373B2 (ja) * 2019-12-11 2022-12-13 トヨタ自動車株式会社 データ解析システム及びデータ解析方法
CN111421390B (zh) * 2020-02-29 2021-10-12 湖南大学 一种制造微纳米台阶阵列结构的离子束抛光加工方法
JP2021138572A (ja) * 2020-03-05 2021-09-16 住友金属鉱山株式会社 情報処理装置、情報処理方法およびプログラム
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US7171247B2 (en) 2001-04-26 2007-01-30 Phoenix Korea Co., Ltd. Hinge device

Also Published As

Publication number Publication date
JP4737933B2 (ja) 2011-08-03
KR20030069892A (ko) 2003-08-27
WO2003073481A2 (en) 2003-09-04
GB0418787D0 (en) 2004-09-22
AU2003217630A8 (en) 2003-09-09
GB0418786D0 (en) 2004-09-22
JP2005518614A (ja) 2005-06-23
WO2003073448A3 (en) 2004-07-15
US7972440B2 (en) 2011-07-05
US20060048697A1 (en) 2006-03-09
KR100979658B1 (ko) 2010-09-02
GB2402809A (en) 2004-12-15
WO2003073481A3 (en) 2004-06-03
GB2402809B (en) 2006-09-20
KR20040088517A (ko) 2004-10-16
AU2003225728A1 (en) 2003-09-09
KR20050004786A (ko) 2005-01-12
WO2003073448A2 (en) 2003-09-04
AU2003217630A1 (en) 2003-09-09
JP2005518552A (ja) 2005-06-23
AU2003225728A8 (en) 2003-09-09
GB2405745A (en) 2005-03-09

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