GB2405745A - Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system - Google Patents

Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system Download PDF

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Publication number
GB2405745A
GB2405745A GB0418787A GB0418787A GB2405745A GB 2405745 A GB2405745 A GB 2405745A GB 0418787 A GB0418787 A GB 0418787A GB 0418787 A GB0418787 A GB 0418787A GB 2405745 A GB2405745 A GB 2405745A
Authority
GB
United Kingdom
Prior art keywords
electron beam
sample
fabrication process
scanning actuator
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0418787A
Other languages
English (en)
Other versions
GB0418787D0 (en
Inventor
Erik Cho Houge
F A Stevie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of GB0418787D0 publication Critical patent/GB0418787D0/en
Publication of GB2405745A publication Critical patent/GB2405745A/en
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electron Sources, Ion Sources (AREA)
  • General Factory Administration (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB0418787A 2002-02-22 2003-02-24 Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system Withdrawn GB2405745A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35922202P 2002-02-22 2002-02-22
PCT/US2003/007264 WO2003073481A2 (en) 2002-02-22 2003-02-24 Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system

Publications (2)

Publication Number Publication Date
GB0418787D0 GB0418787D0 (en) 2004-09-22
GB2405745A true GB2405745A (en) 2005-03-09

Family

ID=27766053

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0418787A Withdrawn GB2405745A (en) 2002-02-22 2003-02-24 Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system
GB0418786A Expired - Fee Related GB2402809B (en) 2002-02-22 2003-02-24 Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0418786A Expired - Fee Related GB2402809B (en) 2002-02-22 2003-02-24 Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device

Country Status (6)

Country Link
US (1) US7972440B2 (enExample)
JP (2) JP4737933B2 (enExample)
KR (3) KR100979071B1 (enExample)
AU (2) AU2003225728A1 (enExample)
GB (2) GB2405745A (enExample)
WO (2) WO2003073448A2 (enExample)

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US20070239305A1 (en) * 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
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JP5595054B2 (ja) * 2010-01-29 2014-09-24 株式会社日立ハイテクサイエンス 電子顕微鏡及び試料分析方法
CN102490120B (zh) * 2011-11-29 2013-10-09 清华大学 用于化学机械抛光机的自适应逆控制系统
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US8963206B2 (en) * 2012-08-27 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for increasing fin density
JP6261178B2 (ja) * 2013-03-27 2018-01-17 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、荷電粒子ビーム装置を用いた試料の加工方法、及び荷電粒子ビーム装置を用いた試料の加工コンピュータプログラム
KR102410666B1 (ko) 2015-01-09 2022-06-20 삼성전자주식회사 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법
US20160380045A1 (en) * 2015-06-25 2016-12-29 Tivra Corporation Crystalline semiconductor growth on amorphous and poly-crystalline substrates
US9846933B2 (en) * 2015-11-16 2017-12-19 General Electric Company Systems and methods for monitoring components
CN106392233B (zh) * 2016-12-06 2018-08-14 兰州大学 一种电镜原位加热装置结合焊料的纳米焊接方法
US20190287762A1 (en) * 2018-01-25 2019-09-19 Fei Company System and method of preparing integrated circuits for backside probing using charged particle beams
IL319057A (en) * 2018-07-13 2025-04-01 Asml Netherlands Bv SEM image enhancement systems and methods
CN117001534A (zh) * 2018-09-24 2023-11-07 应用材料公司 以机器视觉作为对cmp工艺控制算法的输入
IL317072A (en) 2018-12-31 2025-01-01 Asml Netherlands Bv Fully automated SEM sampling system for E-beam image enhancement
CN110712094B (zh) * 2019-09-06 2021-07-23 中国兵器科学研究院宁波分院 降低离子束抛光光学元件表面污染的方法
JP7188373B2 (ja) * 2019-12-11 2022-12-13 トヨタ自動車株式会社 データ解析システム及びデータ解析方法
CN111421390B (zh) * 2020-02-29 2021-10-12 湖南大学 一种制造微纳米台阶阵列结构的离子束抛光加工方法
JP2021138572A (ja) * 2020-03-05 2021-09-16 住友金属鉱山株式会社 情報処理装置、情報処理方法およびプログラム
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WO2022064573A1 (ja) * 2020-09-23 2022-03-31 三菱重工業株式会社 敵対的生成ネットワークを用いた生産条件生成システム、及びその生産条件生成方法並びに生産条件生成プログラム
CN112484922A (zh) * 2020-11-13 2021-03-12 北京北方华创微电子装备有限公司 一种工艺腔室漏率检测方法、半导体工艺设备
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Also Published As

Publication number Publication date
JP4737933B2 (ja) 2011-08-03
KR20030069892A (ko) 2003-08-27
WO2003073481A2 (en) 2003-09-04
GB0418787D0 (en) 2004-09-22
AU2003217630A8 (en) 2003-09-09
GB0418786D0 (en) 2004-09-22
JP2005518614A (ja) 2005-06-23
WO2003073448A3 (en) 2004-07-15
US7972440B2 (en) 2011-07-05
US20060048697A1 (en) 2006-03-09
KR100979658B1 (ko) 2010-09-02
GB2402809A (en) 2004-12-15
WO2003073481A3 (en) 2004-06-03
GB2402809B (en) 2006-09-20
KR20040088517A (ko) 2004-10-16
AU2003225728A1 (en) 2003-09-09
KR20050004786A (ko) 2005-01-12
KR100979071B1 (ko) 2010-08-31
WO2003073448A2 (en) 2003-09-04
AU2003217630A1 (en) 2003-09-09
JP2005518552A (ja) 2005-06-23
AU2003225728A8 (en) 2003-09-09

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