JP2005518480A5 - - Google Patents

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Publication number
JP2005518480A5
JP2005518480A5 JP2003572060A JP2003572060A JP2005518480A5 JP 2005518480 A5 JP2005518480 A5 JP 2005518480A5 JP 2003572060 A JP2003572060 A JP 2003572060A JP 2003572060 A JP2003572060 A JP 2003572060A JP 2005518480 A5 JP2005518480 A5 JP 2005518480A5
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JP
Japan
Prior art keywords
plasma
baffle
power
plasma processing
slot
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JP2003572060A
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English (en)
Japanese (ja)
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JP4740541B2 (ja
JP2005518480A (ja
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Priority claimed from US10/080,496 external-priority patent/US6946054B2/en
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Publication of JP2005518480A publication Critical patent/JP2005518480A/ja
Publication of JP2005518480A5 publication Critical patent/JP2005518480A5/ja
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Publication of JP4740541B2 publication Critical patent/JP4740541B2/ja
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JP2003572060A 2002-02-22 2003-02-19 ファラデーシールドならびにウェハのプラズマ処理 Expired - Fee Related JP4740541B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/080,496 US6946054B2 (en) 2002-02-22 2002-02-22 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US10/080,496 2002-02-22
PCT/US2003/004830 WO2003073460A1 (en) 2002-02-22 2003-02-19 Faraday shields and plasma wafer processing

Publications (3)

Publication Number Publication Date
JP2005518480A JP2005518480A (ja) 2005-06-23
JP2005518480A5 true JP2005518480A5 (https=) 2006-09-14
JP4740541B2 JP4740541B2 (ja) 2011-08-03

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Family Applications (1)

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JP2003572060A Expired - Fee Related JP4740541B2 (ja) 2002-02-22 2003-02-19 ファラデーシールドならびにウェハのプラズマ処理

Country Status (7)

Country Link
US (1) US6946054B2 (https=)
JP (1) JP4740541B2 (https=)
KR (1) KR100955996B1 (https=)
CN (1) CN100440419C (https=)
AU (1) AU2003211138A1 (https=)
TW (1) TW589668B (https=)
WO (1) WO2003073460A1 (https=)

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JP7257807B2 (ja) * 2019-02-12 2023-04-14 東京エレクトロン株式会社 スパッタ装置
CN110138104B (zh) * 2019-06-14 2023-11-17 青岛大学 一种用于无线电能传输磁耦合器的复合屏蔽层
US11189464B2 (en) * 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
KR102189337B1 (ko) * 2019-07-17 2020-12-09 주식회사 유진테크 플라즈마 처리 장치
JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置
CN113543446A (zh) * 2020-04-13 2021-10-22 台达电子工业股份有限公司 电源产生器的点火方法
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
CN113193312B (zh) * 2021-04-25 2022-05-03 电子科技大学 圆波导TE0n模式超宽带输出窗结构
CN115404451A (zh) * 2021-05-28 2022-11-29 鑫天虹(厦门)科技有限公司 磁场调整装置、可产生均匀磁场的薄膜沉积设备及其沉积方法
JP7680123B2 (ja) * 2021-06-24 2025-05-20 東京エレクトロン株式会社 成膜装置及び成膜方法
CN114231936A (zh) * 2021-11-09 2022-03-25 中山市博顿光电科技有限公司 防污染装置、电离腔体及射频离子源
CN115295389B (zh) * 2022-08-23 2025-07-15 盛吉盛半导体科技(北京)有限公司 电感耦合等离子体装置及半导体薄膜设备
JP2024067696A (ja) * 2022-11-07 2024-05-17 日新電機株式会社 プラズマ処理装置
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