AU2003211138A1 - Faraday shields and plasma wafer processing - Google Patents

Faraday shields and plasma wafer processing

Info

Publication number
AU2003211138A1
AU2003211138A1 AU2003211138A AU2003211138A AU2003211138A1 AU 2003211138 A1 AU2003211138 A1 AU 2003211138A1 AU 2003211138 A AU2003211138 A AU 2003211138A AU 2003211138 A AU2003211138 A AU 2003211138A AU 2003211138 A1 AU2003211138 A1 AU 2003211138A1
Authority
AU
Australia
Prior art keywords
wafer processing
faraday shields
plasma wafer
plasma
faraday
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003211138A
Other languages
English (en)
Inventor
Josef Brcka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003211138A1 publication Critical patent/AU2003211138A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
AU2003211138A 2002-02-22 2003-02-19 Faraday shields and plasma wafer processing Abandoned AU2003211138A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/080,496 US6946054B2 (en) 2002-02-22 2002-02-22 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US10/080,496 2002-02-22
PCT/US2003/004830 WO2003073460A1 (en) 2002-02-22 2003-02-19 Faraday shields and plasma wafer processing

Publications (1)

Publication Number Publication Date
AU2003211138A1 true AU2003211138A1 (en) 2003-09-09

Family

ID=27752833

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003211138A Abandoned AU2003211138A1 (en) 2002-02-22 2003-02-19 Faraday shields and plasma wafer processing

Country Status (7)

Country Link
US (1) US6946054B2 (https=)
JP (1) JP4740541B2 (https=)
KR (1) KR100955996B1 (https=)
CN (1) CN100440419C (https=)
AU (1) AU2003211138A1 (https=)
TW (1) TW589668B (https=)
WO (1) WO2003073460A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060137821A1 (en) * 2004-12-28 2006-06-29 Lam Research Coporation Window protector for sputter etching of metal layers
FR2842388B1 (fr) * 2002-07-11 2004-09-24 Cit Alcatel Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
JP4775834B2 (ja) * 2002-08-05 2011-09-21 東京エレクトロン株式会社 エッチング方法
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
US7760214B2 (en) 2004-08-17 2010-07-20 Intel Corporation Inserting transitions into a waveform that drives a display
US7313310B2 (en) * 2005-05-25 2007-12-25 Honeywell International Inc. Plasma directing baffle and method of use
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US7591935B2 (en) * 2005-12-14 2009-09-22 Tokyo Electron Limited Enhanced reliability deposition baffle for iPVD
US7959775B2 (en) * 2006-09-29 2011-06-14 Tokyo Electron Limited Thermal stress-failure-resistant dielectric windows in vacuum processing systems
EP2053631A1 (fr) 2007-10-22 2009-04-29 Industrial Plasma Services & Technologies - IPST GmbH Procédé et dispositif pour le traitement par plasma de substrats au défilé
WO2009157483A1 (ja) * 2008-06-26 2009-12-30 ユーテック株式会社 ファラデーケージ及びこれを有する装置
CN102395704B (zh) * 2009-02-13 2014-02-19 盖利姆企业私人有限公司 等离子体沉积
US8736177B2 (en) * 2010-09-30 2014-05-27 Fei Company Compact RF antenna for an inductively coupled plasma ion source
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) * 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
JP2013191593A (ja) * 2012-03-12 2013-09-26 Tokyo Electron Ltd プラズマ処理装置
JP6101031B2 (ja) * 2012-09-28 2017-03-22 東京応化工業株式会社 プラズマ処理装置および積層体の製造方法
SG2013075437A (en) * 2012-10-23 2014-05-29 Lam Res Corp Faraday shield having plasma density decouplingstructure between tcp coil zones
US10935276B2 (en) 2015-10-20 2021-03-02 Steven Michalski Air mixing device
US10157733B2 (en) * 2016-01-29 2018-12-18 Applied Materials, Inc. Methods for igniting a plasma in a substrate processing chamber
JP6620078B2 (ja) * 2016-09-05 2019-12-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20180143332A1 (en) 2016-11-18 2018-05-24 Plasma-Therm Llc Ion Filter
KR102273084B1 (ko) * 2018-06-29 2021-07-06 주식회사 엘지화학 파라데이 상자를 이용한 플라즈마 식각 방법
JP7257807B2 (ja) * 2019-02-12 2023-04-14 東京エレクトロン株式会社 スパッタ装置
CN110138104B (zh) * 2019-06-14 2023-11-17 青岛大学 一种用于无线电能传输磁耦合器的复合屏蔽层
US11189464B2 (en) * 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
KR102189337B1 (ko) * 2019-07-17 2020-12-09 주식회사 유진테크 플라즈마 처리 장치
JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置
CN113543446A (zh) * 2020-04-13 2021-10-22 台达电子工业股份有限公司 电源产生器的点火方法
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
CN113193312B (zh) * 2021-04-25 2022-05-03 电子科技大学 圆波导TE0n模式超宽带输出窗结构
CN115404451A (zh) * 2021-05-28 2022-11-29 鑫天虹(厦门)科技有限公司 磁场调整装置、可产生均匀磁场的薄膜沉积设备及其沉积方法
JP7680123B2 (ja) * 2021-06-24 2025-05-20 東京エレクトロン株式会社 成膜装置及び成膜方法
CN114231936A (zh) * 2021-11-09 2022-03-25 中山市博顿光电科技有限公司 防污染装置、电离腔体及射频离子源
CN115295389B (zh) * 2022-08-23 2025-07-15 盛吉盛半导体科技(北京)有限公司 电感耦合等离子体装置及半导体薄膜设备
JP2024067696A (ja) * 2022-11-07 2024-05-17 日新電機株式会社 プラズマ処理装置
CN119685770B (zh) * 2024-11-28 2025-10-10 武汉理工大学 一种双靶共镀磁控溅射掺杂比例控制装置及方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974059A (en) 1974-10-03 1976-08-10 Yoichi Murayama High vacuum ion plating device
US4431901A (en) 1982-07-02 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Induction plasma tube
JP3381916B2 (ja) 1990-01-04 2003-03-04 マトソン テクノロジー，インコーポレイテッド 低周波誘導型高周波プラズマ反応装置
US5178739A (en) 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5234529A (en) 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5231334A (en) 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US6190512B1 (en) 1993-09-07 2001-02-20 Tokyo Electron Arizona Inc. Soft plasma ignition in plasma processing chambers
US5449433A (en) 1994-02-14 1995-09-12 Micron Semiconductor, Inc. Use of a high density plasma source having an electrostatic shield for anisotropic polysilicon etching over topography
JP3150058B2 (ja) * 1994-12-05 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5763851A (en) 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
JP3739137B2 (ja) 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US6056848A (en) 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6033585A (en) * 1996-12-20 2000-03-07 Lam Research Corporation Method and apparatus for preventing lightup of gas distribution holes
JP3846970B2 (ja) 1997-04-14 2006-11-15 キヤノンアネルバ株式会社 イオン化スパッタリング装置
US5830330A (en) * 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
CN1097491C (zh) 1997-11-14 2003-01-01 东京电子株式会社 一种等离子体处理系统及清洁等离子体处理系统的方法
US5903106A (en) 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield
JP2001526459A (ja) 1997-12-05 2001-12-18 ティーガル コーポレイション 堆積シールドを具備するプラズマ反応炉
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6080287A (en) 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP3530788B2 (ja) * 1998-10-29 2004-05-24 キヤノン株式会社 マイクロ波供給器及びプラズマ処理装置並びに処理方法
US6248251B1 (en) 1999-02-19 2001-06-19 Tokyo Electron Limited Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
US6523493B1 (en) * 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
US6156164A (en) 1999-06-22 2000-12-05 Tokyo Electron Limited Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing
EP1144713B1 (en) * 1999-11-18 2003-09-10 Tokyo Electron Limited High target utilization magnetic arrangement for a truncated conical sputtering target
US6652711B2 (en) * 2001-06-06 2003-11-25 Tokyo Electron Limited Inductively-coupled plasma processing system

Also Published As

Publication number Publication date
JP4740541B2 (ja) 2011-08-03
WO2003073460A1 (en) 2003-09-04
CN1647238A (zh) 2005-07-27
US20030159782A1 (en) 2003-08-28
CN100440419C (zh) 2008-12-03
TW589668B (en) 2004-06-01
KR20040089656A (ko) 2004-10-21
KR100955996B1 (ko) 2010-05-04
TW200307990A (en) 2003-12-16
US6946054B2 (en) 2005-09-20
JP2005518480A (ja) 2005-06-23

Similar Documents

Publication Publication Date Title
AU2003211138A1 (en) Faraday shields and plasma wafer processing
AU2003235924A1 (en) Plasma processing equipment and plasma processing method
AU2003211351A1 (en) Plasma processing device and plasma processing method
AU2002306930A1 (en) Plasma processor and method for operating same
AU2003241714A1 (en) Plasma processing device
AU2003244166A1 (en) Plasma processing method
AU2003272031A1 (en) Improved deposition shield in a plasma processing system,and methods of manufacture of such shield
AU2003243016A1 (en) Plasma processing apparatus and plasma processing method
AU2003284605A1 (en) Plasma processing apparatus and plasma processing method
AU2003284683A1 (en) Plasma processing method and apparatus
AU2003284684A1 (en) Plasma processing apparatus and method
AU2003294492A1 (en) Plasma processing system and method
AU2003269394A1 (en) Improved bellows shield in a plasma processing system,and method of manufacture of such bellows shield
EP1241577A3 (en) Methods and arrangements for improved parity-stripe processing
AU2003236307A1 (en) Plasma etching method and plasma etching device
AU2003284598A1 (en) Plasma processing apparatus and plasma processing method
AU2003252258A1 (en) Plasma processing device and controlling method therefor
AU2003281401A1 (en) Plasma processing equipment
AU2003261790A1 (en) Plasma processing method and plasma processing device
AU2003221340A1 (en) Plasma processing apparatus
AU2003205849A1 (en) Plasma processing apparatus
AU2003252470A1 (en) Plasma processing apparatus
AU2003262240A1 (en) Plasma processing device
AU2003255013A1 (en) Plasma processing device
AU2003221359A1 (en) Plasma processing device and plasma generating method

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase