AU2003236307A1 - Plasma etching method and plasma etching device - Google Patents

Plasma etching method and plasma etching device

Info

Publication number
AU2003236307A1
AU2003236307A1 AU2003236307A AU2003236307A AU2003236307A1 AU 2003236307 A1 AU2003236307 A1 AU 2003236307A1 AU 2003236307 A AU2003236307 A AU 2003236307A AU 2003236307 A AU2003236307 A AU 2003236307A AU 2003236307 A1 AU2003236307 A1 AU 2003236307A1
Authority
AU
Australia
Prior art keywords
plasma etching
etching method
etching device
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003236307A
Other versions
AU2003236307A8 (en
Inventor
Hisataka Hayashi
Masanobu Honda
Shoichiro Matsuyama
Kazuya Nagaseki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003236307A8 publication Critical patent/AU2003236307A8/en
Publication of AU2003236307A1 publication Critical patent/AU2003236307A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
AU2003236307A 2002-04-08 2003-04-07 Plasma etching method and plasma etching device Abandoned AU2003236307A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002105249 2002-04-08
JP2002-105249 2002-04-08
PCT/JP2003/004410 WO2003085716A1 (en) 2002-04-08 2003-04-07 Plasma etching method and plasma etching device

Publications (2)

Publication Number Publication Date
AU2003236307A8 AU2003236307A8 (en) 2003-10-20
AU2003236307A1 true AU2003236307A1 (en) 2003-10-20

Family

ID=28786373

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003236307A Abandoned AU2003236307A1 (en) 2002-04-08 2003-04-07 Plasma etching method and plasma etching device

Country Status (5)

Country Link
US (1) US20050039854A1 (en)
JP (1) JP4377698B2 (en)
AU (1) AU2003236307A1 (en)
TW (1) TWI233644B (en)
WO (1) WO2003085716A1 (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4431402B2 (en) * 2002-04-08 2010-03-17 東京エレクトロン株式会社 Plasma etching method
JP4412661B2 (en) * 2004-10-15 2010-02-10 信越化学工業株式会社 Plasma processing apparatus and plasma processing method
US7955515B2 (en) 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
US7977244B2 (en) 2006-12-18 2011-07-12 United Microelectronics Corp. Semiconductor manufacturing process
JP4660498B2 (en) * 2007-03-27 2011-03-30 株式会社東芝 Substrate plasma processing equipment
JP5224837B2 (en) * 2008-02-01 2013-07-03 株式会社東芝 Substrate plasma processing apparatus and plasma processing method
RU2523773C2 (en) 2009-05-13 2014-07-20 СиО2 Медикал Продактс, Инк., Gas release process for inspection of coated surfaces
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
JP2012015292A (en) * 2010-06-30 2012-01-19 Japan Science & Technology Agency METHOD OF ETCHING NdFeB
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
JP6095678B2 (en) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド Passivation, pH protection or slippery coatings for pharmaceutical packages, coating processes and equipment
JP6509734B2 (en) 2012-11-01 2019-05-08 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド Film inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014085348A2 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
EP2961858B1 (en) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Coated syringe.
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
US9586279B2 (en) 2013-09-17 2017-03-07 Kangmin Hsia Method and system of surface polishing
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US11077233B2 (en) 2015-08-18 2021-08-03 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
WO2020096885A1 (en) * 2018-11-05 2020-05-14 Applied Materials, Inc. Magnetic housing systems
US11217443B2 (en) 2018-11-30 2022-01-04 Applied Materials, Inc. Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259922A (en) * 1990-08-14 1993-11-09 Matsushita Electric Industrial Co., Ltd. Drying etching method
US5444207A (en) * 1992-03-26 1995-08-22 Kabushiki Kaisha Toshiba Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
US5404079A (en) * 1992-08-13 1995-04-04 Matsushita Electric Industrial Co., Ltd. Plasma generating apparatus
US5512130A (en) * 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
JPH08293481A (en) * 1995-04-24 1996-11-05 Hitachi Ltd Forming method for pattern and element
TW312815B (en) * 1995-12-15 1997-08-11 Hitachi Ltd
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5841237A (en) * 1997-07-14 1998-11-24 Lockheed Martin Energy Research Corporation Production of large resonant plasma volumes in microwave electron cyclotron resonance ion sources
JP2001155899A (en) * 1999-11-25 2001-06-08 Tadahiro Omi Plasma processing apparatus and process using the same
JP3920015B2 (en) * 2000-09-14 2007-05-30 東京エレクトロン株式会社 Si substrate processing method

Also Published As

Publication number Publication date
TW200402792A (en) 2004-02-16
AU2003236307A8 (en) 2003-10-20
US20050039854A1 (en) 2005-02-24
JPWO2003085716A1 (en) 2005-08-18
JP4377698B2 (en) 2009-12-02
TWI233644B (en) 2005-06-01
WO2003085716A1 (en) 2003-10-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase
TH Corrigenda

Free format text: IN VOL 17, NO 47, PAGE(S) 16378 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME TOKYO ELECTRON LIMITED, APPLICATION NO. 2003236307, UNDER INID (71) CORRECT THE NAME TO READ KABUSHIKI KAISHA TOSHIBA; TOKYO ELECTRON LIMITED