AU2003236307A1 - Plasma etching method and plasma etching device - Google Patents
Plasma etching method and plasma etching deviceInfo
- Publication number
- AU2003236307A1 AU2003236307A1 AU2003236307A AU2003236307A AU2003236307A1 AU 2003236307 A1 AU2003236307 A1 AU 2003236307A1 AU 2003236307 A AU2003236307 A AU 2003236307A AU 2003236307 A AU2003236307 A AU 2003236307A AU 2003236307 A1 AU2003236307 A1 AU 2003236307A1
- Authority
- AU
- Australia
- Prior art keywords
- plasma etching
- etching method
- etching device
- plasma
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000001020 plasma etching Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002105249 | 2002-04-08 | ||
JP2002-105249 | 2002-04-08 | ||
PCT/JP2003/004410 WO2003085716A1 (en) | 2002-04-08 | 2003-04-07 | Plasma etching method and plasma etching device |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2003236307A8 AU2003236307A8 (en) | 2003-10-20 |
AU2003236307A1 true AU2003236307A1 (en) | 2003-10-20 |
Family
ID=28786373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003236307A Abandoned AU2003236307A1 (en) | 2002-04-08 | 2003-04-07 | Plasma etching method and plasma etching device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050039854A1 (en) |
JP (1) | JP4377698B2 (en) |
AU (1) | AU2003236307A1 (en) |
TW (1) | TWI233644B (en) |
WO (1) | WO2003085716A1 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4431402B2 (en) * | 2002-04-08 | 2010-03-17 | 東京エレクトロン株式会社 | Plasma etching method |
JP4412661B2 (en) * | 2004-10-15 | 2010-02-10 | 信越化学工業株式会社 | Plasma processing apparatus and plasma processing method |
US7955515B2 (en) | 2005-07-11 | 2011-06-07 | Sandisk 3D Llc | Method of plasma etching transition metal oxides |
US7977244B2 (en) | 2006-12-18 | 2011-07-12 | United Microelectronics Corp. | Semiconductor manufacturing process |
JP4660498B2 (en) * | 2007-03-27 | 2011-03-30 | 株式会社東芝 | Substrate plasma processing equipment |
JP5224837B2 (en) * | 2008-02-01 | 2013-07-03 | 株式会社東芝 | Substrate plasma processing apparatus and plasma processing method |
RU2523773C2 (en) | 2009-05-13 | 2014-07-20 | СиО2 Медикал Продактс, Инк., | Gas release process for inspection of coated surfaces |
WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
JP2012015292A (en) * | 2010-06-30 | 2012-01-19 | Japan Science & Technology Agency | METHOD OF ETCHING NdFeB |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
JP6095678B2 (en) | 2011-11-11 | 2017-03-15 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | Passivation, pH protection or slippery coatings for pharmaceutical packages, coating processes and equipment |
JP6509734B2 (en) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | Film inspection method |
WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
WO2014085348A2 (en) | 2012-11-30 | 2014-06-05 | Sio2 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
US20160017490A1 (en) | 2013-03-15 | 2016-01-21 | Sio2 Medical Products, Inc. | Coating method |
US9586279B2 (en) | 2013-09-17 | 2017-03-07 | Kangmin Hsia | Method and system of surface polishing |
WO2015148471A1 (en) | 2014-03-28 | 2015-10-01 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
WO2020096885A1 (en) * | 2018-11-05 | 2020-05-14 | Applied Materials, Inc. | Magnetic housing systems |
US11217443B2 (en) | 2018-11-30 | 2022-01-04 | Applied Materials, Inc. | Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5259922A (en) * | 1990-08-14 | 1993-11-09 | Matsushita Electric Industrial Co., Ltd. | Drying etching method |
US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
US5404079A (en) * | 1992-08-13 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Plasma generating apparatus |
US5512130A (en) * | 1994-03-09 | 1996-04-30 | Texas Instruments Incorporated | Method and apparatus of etching a clean trench in a semiconductor material |
JPH08293481A (en) * | 1995-04-24 | 1996-11-05 | Hitachi Ltd | Forming method for pattern and element |
TW312815B (en) * | 1995-12-15 | 1997-08-11 | Hitachi Ltd | |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
US5841237A (en) * | 1997-07-14 | 1998-11-24 | Lockheed Martin Energy Research Corporation | Production of large resonant plasma volumes in microwave electron cyclotron resonance ion sources |
JP2001155899A (en) * | 1999-11-25 | 2001-06-08 | Tadahiro Omi | Plasma processing apparatus and process using the same |
JP3920015B2 (en) * | 2000-09-14 | 2007-05-30 | 東京エレクトロン株式会社 | Si substrate processing method |
-
2003
- 2003-04-07 WO PCT/JP2003/004410 patent/WO2003085716A1/en active Application Filing
- 2003-04-07 TW TW092107909A patent/TWI233644B/en not_active IP Right Cessation
- 2003-04-07 AU AU2003236307A patent/AU2003236307A1/en not_active Abandoned
- 2003-04-07 JP JP2003582802A patent/JP4377698B2/en not_active Expired - Fee Related
-
2004
- 2004-10-07 US US10/959,585 patent/US20050039854A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW200402792A (en) | 2004-02-16 |
AU2003236307A8 (en) | 2003-10-20 |
US20050039854A1 (en) | 2005-02-24 |
JPWO2003085716A1 (en) | 2005-08-18 |
JP4377698B2 (en) | 2009-12-02 |
TWI233644B (en) | 2005-06-01 |
WO2003085716A1 (en) | 2003-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase | ||
TH | Corrigenda |
Free format text: IN VOL 17, NO 47, PAGE(S) 16378 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME TOKYO ELECTRON LIMITED, APPLICATION NO. 2003236307, UNDER INID (71) CORRECT THE NAME TO READ KABUSHIKI KAISHA TOSHIBA; TOKYO ELECTRON LIMITED |