TW589668B - Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing - Google Patents

Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing Download PDF

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Publication number
TW589668B
TW589668B TW092103594A TW92103594A TW589668B TW 589668 B TW589668 B TW 589668B TW 092103594 A TW092103594 A TW 092103594A TW 92103594 A TW92103594 A TW 92103594A TW 589668 B TW589668 B TW 589668B
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TW
Taiwan
Prior art keywords
plasma
slot
patent application
energy
deposition
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Application number
TW092103594A
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English (en)
Chinese (zh)
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TW200307990A (en
Inventor
Jozef Brcka
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200307990A publication Critical patent/TW200307990A/zh
Application granted granted Critical
Publication of TW589668B publication Critical patent/TW589668B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW092103594A 2002-02-22 2003-02-20 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing TW589668B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/080,496 US6946054B2 (en) 2002-02-22 2002-02-22 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing

Publications (2)

Publication Number Publication Date
TW200307990A TW200307990A (en) 2003-12-16
TW589668B true TW589668B (en) 2004-06-01

Family

ID=27752833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092103594A TW589668B (en) 2002-02-22 2003-02-20 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing

Country Status (7)

Country Link
US (1) US6946054B2 (https=)
JP (1) JP4740541B2 (https=)
KR (1) KR100955996B1 (https=)
CN (1) CN100440419C (https=)
AU (1) AU2003211138A1 (https=)
TW (1) TW589668B (https=)
WO (1) WO2003073460A1 (https=)

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JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置
CN113543446A (zh) * 2020-04-13 2021-10-22 台达电子工业股份有限公司 电源产生器的点火方法
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Also Published As

Publication number Publication date
JP4740541B2 (ja) 2011-08-03
WO2003073460A1 (en) 2003-09-04
CN1647238A (zh) 2005-07-27
US20030159782A1 (en) 2003-08-28
CN100440419C (zh) 2008-12-03
KR20040089656A (ko) 2004-10-21
KR100955996B1 (ko) 2010-05-04
TW200307990A (en) 2003-12-16
US6946054B2 (en) 2005-09-20
AU2003211138A1 (en) 2003-09-09
JP2005518480A (ja) 2005-06-23

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