KR100955996B1 - 반도체 공정 시의 수정된 전달 함수 증착 배플 및 고밀도 플라즈마 점화 - Google Patents

반도체 공정 시의 수정된 전달 함수 증착 배플 및 고밀도 플라즈마 점화 Download PDF

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KR100955996B1
KR100955996B1 KR1020047013039A KR20047013039A KR100955996B1 KR 100955996 B1 KR100955996 B1 KR 100955996B1 KR 1020047013039 A KR1020047013039 A KR 1020047013039A KR 20047013039 A KR20047013039 A KR 20047013039A KR 100955996 B1 KR100955996 B1 KR 100955996B1
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plasma
baffle
power
slot
watts
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KR20040089656A (ko
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브릭카조세프
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020047013039A 2002-02-22 2003-02-19 반도체 공정 시의 수정된 전달 함수 증착 배플 및 고밀도 플라즈마 점화 Expired - Fee Related KR100955996B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/080,496 US6946054B2 (en) 2002-02-22 2002-02-22 Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US10/080,496 2002-02-22
PCT/US2003/004830 WO2003073460A1 (en) 2002-02-22 2003-02-19 Faraday shields and plasma wafer processing

Publications (2)

Publication Number Publication Date
KR20040089656A KR20040089656A (ko) 2004-10-21
KR100955996B1 true KR100955996B1 (ko) 2010-05-04

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Country Status (7)

Country Link
US (1) US6946054B2 (https=)
JP (1) JP4740541B2 (https=)
KR (1) KR100955996B1 (https=)
CN (1) CN100440419C (https=)
AU (1) AU2003211138A1 (https=)
TW (1) TW589668B (https=)
WO (1) WO2003073460A1 (https=)

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WO2009157483A1 (ja) * 2008-06-26 2009-12-30 ユーテック株式会社 ファラデーケージ及びこれを有する装置
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US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
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JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
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JP6101031B2 (ja) * 2012-09-28 2017-03-22 東京応化工業株式会社 プラズマ処理装置および積層体の製造方法
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US10157733B2 (en) * 2016-01-29 2018-12-18 Applied Materials, Inc. Methods for igniting a plasma in a substrate processing chamber
JP6620078B2 (ja) * 2016-09-05 2019-12-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20180143332A1 (en) 2016-11-18 2018-05-24 Plasma-Therm Llc Ion Filter
KR102273084B1 (ko) * 2018-06-29 2021-07-06 주식회사 엘지화학 파라데이 상자를 이용한 플라즈마 식각 방법
JP7257807B2 (ja) * 2019-02-12 2023-04-14 東京エレクトロン株式会社 スパッタ装置
CN110138104B (zh) * 2019-06-14 2023-11-17 青岛大学 一种用于无线电能传输磁耦合器的复合屏蔽层
US11189464B2 (en) * 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
KR102189337B1 (ko) * 2019-07-17 2020-12-09 주식회사 유진테크 플라즈마 처리 장치
JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置
CN113543446A (zh) * 2020-04-13 2021-10-22 台达电子工业股份有限公司 电源产生器的点火方法
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
CN113193312B (zh) * 2021-04-25 2022-05-03 电子科技大学 圆波导TE0n模式超宽带输出窗结构
CN115404451A (zh) * 2021-05-28 2022-11-29 鑫天虹(厦门)科技有限公司 磁场调整装置、可产生均匀磁场的薄膜沉积设备及其沉积方法
JP7680123B2 (ja) * 2021-06-24 2025-05-20 東京エレクトロン株式会社 成膜装置及び成膜方法
CN114231936A (zh) * 2021-11-09 2022-03-25 中山市博顿光电科技有限公司 防污染装置、电离腔体及射频离子源
CN115295389B (zh) * 2022-08-23 2025-07-15 盛吉盛半导体科技(北京)有限公司 电感耦合等离子体装置及半导体薄膜设备
JP2024067696A (ja) * 2022-11-07 2024-05-17 日新電機株式会社 プラズマ処理装置
CN119685770B (zh) * 2024-11-28 2025-10-10 武汉理工大学 一种双靶共镀磁控溅射掺杂比例控制装置及方法

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WO2001037310A2 (en) * 1999-11-18 2001-05-25 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition

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JP4740541B2 (ja) 2011-08-03
WO2003073460A1 (en) 2003-09-04
CN1647238A (zh) 2005-07-27
US20030159782A1 (en) 2003-08-28
CN100440419C (zh) 2008-12-03
TW589668B (en) 2004-06-01
KR20040089656A (ko) 2004-10-21
TW200307990A (en) 2003-12-16
US6946054B2 (en) 2005-09-20
AU2003211138A1 (en) 2003-09-09
JP2005518480A (ja) 2005-06-23

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