JP2005517784A - オルガノシロキサン - Google Patents

オルガノシロキサン Download PDF

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Publication number
JP2005517784A
JP2005517784A JP2003569713A JP2003569713A JP2005517784A JP 2005517784 A JP2005517784 A JP 2005517784A JP 2003569713 A JP2003569713 A JP 2003569713A JP 2003569713 A JP2003569713 A JP 2003569713A JP 2005517784 A JP2005517784 A JP 2005517784A
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JP
Japan
Prior art keywords
percent
spin
film
formula
organosiloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003569713A
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English (en)
Japanese (ja)
Other versions
JP2005517784A5 (https=
Inventor
ベドウェル，ウィリアム・ビー
ムクヘルジー，シアマ・ピー
モロ，ロレンザ
シエ，ソンギュアン
ネッドバル，ジャン
イワモト，ナンシー
ラング，ロジャー・ワイ
ハッカー，ナイジェル・ピー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/078,919 external-priority patent/US7011889B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2005517784A publication Critical patent/JP2005517784A/ja
Publication of JP2005517784A5 publication Critical patent/JP2005517784A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2003569713A 2002-02-19 2003-02-19 オルガノシロキサン Pending JP2005517784A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/078,919 US7011889B2 (en) 1998-03-20 2002-02-19 Organosiloxanes
US10/161,561 US6962727B2 (en) 1998-03-20 2002-06-03 Organosiloxanes
PCT/US2003/005171 WO2003070809A2 (en) 2002-02-19 2003-02-19 Organosiloxanes and their use in dielectric films of semiconductors

Publications (2)

Publication Number Publication Date
JP2005517784A true JP2005517784A (ja) 2005-06-16
JP2005517784A5 JP2005517784A5 (https=) 2006-04-06

Family

ID=27759927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003569713A Pending JP2005517784A (ja) 2002-02-19 2003-02-19 オルガノシロキサン

Country Status (4)

Country Link
US (1) US6962727B2 (https=)
JP (1) JP2005517784A (https=)
AU (1) AU2003219826A1 (https=)
WO (1) WO2003070809A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006526672A (ja) * 2003-04-11 2006-11-24 シレクス オサケユキチュア 低ｋ誘電体形成用有機シルセスキオキサン重合体
JP2010519375A (ja) * 2007-02-22 2010-06-03 シレクス オサケユキチュア 集積回路用高シリコン含量シロキサンポリマー
JP2011510133A (ja) * 2008-01-15 2011-03-31 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
JP2013145883A (ja) * 2012-01-13 2013-07-25 Lg Innotek Co Ltd 発光素子パッケージ
WO2026079244A1 (ja) * 2024-10-08 2026-04-16 東亞合成株式会社 シロキサン系化合物、コーティング層付構造体、蒸着膜形成用組成物、蒸着膜、硬化物及びコーティング層付構造体の製造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713234B2 (en) * 1999-02-18 2004-03-30 Micron Technology, Inc. Fabrication of semiconductor devices using anti-reflective coatings
AU2814000A (en) * 1999-02-26 2000-09-14 Trikon Holdings Limited A method of processing a polymer layer
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
JP2003502449A (ja) 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
US7115531B2 (en) * 2000-08-21 2006-10-03 Dow Global Technologies Inc. Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
WO2004101651A1 (en) * 2003-05-08 2004-11-25 Honeywell International Inc. Minimization of coating defects for compositions comprising silicon-based compounds and methods of producing and processing
JP4702055B2 (ja) * 2003-07-29 2011-06-15 東亞合成株式会社 珪素含有高分子化合物及びその製造方法
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4542927B2 (ja) * 2005-03-17 2010-09-15 富士フイルム株式会社 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス
US7329716B2 (en) * 2005-04-18 2008-02-12 Yazaki Corporation Siloxane oligomers by phase transfer catalysis
KR20070095736A (ko) * 2006-03-22 2007-10-01 제일모직주식회사 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
US8450148B2 (en) * 2006-12-14 2013-05-28 Infineon Technologies, Ag Molding compound adhesion for map-molded flip-chip
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8111797B2 (en) * 2007-05-08 2012-02-07 Tdc Acquisition Holdings, Inc. Enhanced system and method for detecting the leading edge of a waveform
CN102318044A (zh) * 2008-05-08 2012-01-11 巴斯夫欧洲公司 包含碳化硅层的层型结构、其制备方法及其用途
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6270514B2 (ja) * 2014-02-03 2018-01-31 スリーエム イノベイティブ プロパティズ カンパニー ボンド磁石用バインダー、ボンド磁石用組成物、ボンド磁石及びその製造方法
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10325863B2 (en) * 2017-02-28 2019-06-18 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same

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FR1561922A (https=) * 1966-08-16 1969-04-04
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
US4808687A (en) * 1988-01-04 1989-02-28 Dow Corning Corporation Novel organopolysiloxanes derived from bis-silyl substituted heterocyclic compounds
JP2718231B2 (ja) * 1990-01-10 1998-02-25 三菱電機株式会社 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法
JPH05190684A (ja) * 1992-01-16 1993-07-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5494750A (en) * 1993-05-10 1996-02-27 Shin-Etsu Chemical Co., Ltd. Heat-curable silicone elastomer composition
US5589162A (en) * 1994-04-28 1996-12-31 Kao Corporation Hair setting agent composition
DE19531568A1 (de) * 1995-08-28 1997-03-06 Bayer Ag Flüssige Organopolysiloxan-Harze, ein Verfahren zu deren Herstellung, niedrigviskose Polydiorganosiloxan-Zusammensetzungen, enthaltend flüssige Organopolysiloxan-Harze und deren Verwendung
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006526672A (ja) * 2003-04-11 2006-11-24 シレクス オサケユキチュア 低ｋ誘電体形成用有機シルセスキオキサン重合体
JP2010519375A (ja) * 2007-02-22 2010-06-03 シレクス オサケユキチュア 集積回路用高シリコン含量シロキサンポリマー
JP2011510133A (ja) * 2008-01-15 2011-03-31 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
JP2013145883A (ja) * 2012-01-13 2013-07-25 Lg Innotek Co Ltd 発光素子パッケージ
WO2026079244A1 (ja) * 2024-10-08 2026-04-16 東亞合成株式会社 シロキサン系化合物、コーティング層付構造体、蒸着膜形成用組成物、蒸着膜、硬化物及びコーティング層付構造体の製造方法

Also Published As

Publication number Publication date
AU2003219826A1 (en) 2003-09-09
US6962727B2 (en) 2005-11-08
WO2003070809A3 (en) 2004-04-15
AU2003219826A8 (en) 2003-09-09
US20030031789A1 (en) 2003-02-13
WO2003070809B1 (en) 2004-07-08
WO2003070809A2 (en) 2003-08-28

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