JP2005515636A5 - - Google Patents

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Publication number
JP2005515636A5
JP2005515636A5 JP2003560987A JP2003560987A JP2005515636A5 JP 2005515636 A5 JP2005515636 A5 JP 2005515636A5 JP 2003560987 A JP2003560987 A JP 2003560987A JP 2003560987 A JP2003560987 A JP 2003560987A JP 2005515636 A5 JP2005515636 A5 JP 2005515636A5
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JP
Japan
Prior art keywords
transistor
controller
voltage
source
output transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003560987A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005515636A (ja
JP4555572B2 (ja
Filing date
Publication date
Priority claimed from US10/050,469 external-priority patent/US6731157B2/en
Application filed filed Critical
Publication of JP2005515636A publication Critical patent/JP2005515636A/ja
Publication of JP2005515636A5 publication Critical patent/JP2005515636A5/ja
Application granted granted Critical
Publication of JP4555572B2 publication Critical patent/JP4555572B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003560987A 2002-01-15 2003-01-15 ｎチャンネル・トランジスタおよびｐチャンネル・トランジスタ用の、正のボディ・バイアスでの適応閾値電圧制御 Expired - Fee Related JP4555572B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/050,469 US6731157B2 (en) 2002-01-15 2002-01-15 Adaptive threshold voltage control with positive body bias for N and P-channel transistors
PCT/US2003/001212 WO2003060996A2 (en) 2002-01-15 2003-01-15 Adaptive threshold voltage control with positive body bias for n and p-channel transistors

Publications (3)

Publication Number Publication Date
JP2005515636A JP2005515636A (ja) 2005-05-26
JP2005515636A5 true JP2005515636A5 (enExample) 2006-03-02
JP4555572B2 JP4555572B2 (ja) 2010-10-06

Family

ID=21965418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003560987A Expired - Fee Related JP4555572B2 (ja) 2002-01-15 2003-01-15 ｎチャンネル・トランジスタおよびｐチャンネル・トランジスタ用の、正のボディ・バイアスでの適応閾値電圧制御

Country Status (8)

Country Link
US (1) US6731157B2 (enExample)
EP (1) EP1468447B1 (enExample)
JP (1) JP4555572B2 (enExample)
CN (1) CN100470765C (enExample)
AU (1) AU2003235599B2 (enExample)
CA (1) CA2473734A1 (enExample)
DE (1) DE60336207D1 (enExample)
WO (1) WO2003060996A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180322B1 (en) 2002-04-16 2007-02-20 Transmeta Corporation Closed loop feedback control of integrated circuits
US7205758B1 (en) * 2004-02-02 2007-04-17 Transmeta Corporation Systems and methods for adjusting threshold voltage
US7949864B1 (en) 2002-12-31 2011-05-24 Vjekoslav Svilan Balanced adaptive body bias control
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7859062B1 (en) 2004-02-02 2010-12-28 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7816742B1 (en) 2004-09-30 2010-10-19 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7509504B1 (en) * 2004-09-30 2009-03-24 Transmeta Corporation Systems and methods for control of integrated circuits comprising body biasing systems
US7994846B2 (en) * 2009-05-14 2011-08-09 International Business Machines Corporation Method and mechanism to reduce current variation in a current reference branch circuit
DE102009036623B4 (de) * 2009-08-07 2011-05-12 Siemens Aktiengesellschaft Triggerschaltung und Gleichrichter, insbesondere für ein einen piezoelektrischen Mikrogenerator aufweisendes, energieautarkes Mikrosystem
US7825693B1 (en) 2009-08-31 2010-11-02 International Business Machines Corporation Reduced duty cycle distortion using controlled body device
US10833582B1 (en) 2020-03-02 2020-11-10 Semiconductor Components Industries, Llc Methods and systems of power management for an integrated circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228360A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体集積回路
US5216385A (en) * 1991-12-31 1993-06-01 Intel Corporation Resistorless trim amplifier using MOS devices for feedback elements
US5329184A (en) * 1992-11-05 1994-07-12 National Semiconductor Corporation Method and apparatus for feedback control of I/O characteristics of digital interface circuits
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
US5394934A (en) 1994-04-15 1995-03-07 American Standard Inc. Indoor air quality sensor and method
US5539351A (en) * 1994-11-03 1996-07-23 Gilsdorf; Ben Circuit and method for reducing a gate volage of a transmission gate within a charge pump circuit
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
EP1081573B1 (en) 1999-08-31 2003-04-09 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
JP3475237B2 (ja) * 2000-07-24 2003-12-08 東京大学長 電力制御装置及び方法並びに電力制御プログラムを記録した記録媒体
JP3537431B2 (ja) * 2003-03-10 2004-06-14 株式会社東芝 半導体装置

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