WO2009057385A1 - 電力増幅器、電力増幅器の制御方法 - Google Patents

電力増幅器、電力増幅器の制御方法 Download PDF

Info

Publication number
WO2009057385A1
WO2009057385A1 PCT/JP2008/066095 JP2008066095W WO2009057385A1 WO 2009057385 A1 WO2009057385 A1 WO 2009057385A1 JP 2008066095 W JP2008066095 W JP 2008066095W WO 2009057385 A1 WO2009057385 A1 WO 2009057385A1
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
mos transistor
control method
omega
normalized
Prior art date
Application number
PCT/JP2008/066095
Other languages
English (en)
French (fr)
Inventor
Kenichi Maruhashi
Masahiro Tanomura
Hidenori Shimawaki
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009538976A priority Critical patent/JP5141690B2/ja
Priority to US12/682,175 priority patent/US8326244B2/en
Priority to CN200880113793.0A priority patent/CN101842978B/zh
Publication of WO2009057385A1 publication Critical patent/WO2009057385A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21178—Power transistors are made by coupling a plurality of single transistors in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

　本発明の電力増幅器は、ゲート長が１８０ｎｍ以下であるＭＯＳトランジスタ（１）と、ＭＯＳトランジスタ（１）のドレイン端子に接続された出力側整合回路（５）と、を有する。また、ＭＯＳトランジスタ（１）は、ＤＣ状態で許容できる電圧値で規格化された電圧Ｖｄ＿ｎが０．５～０．９であり、このＶｄ＿ｎがドレイン－ソース間電圧として印加される。また、ドレイン端子から出力整合回路（５）をみた負荷インピーダンスをＭＯＳトランジスタ（１）のゲート幅Ｗ（ｍｍ）で規格化した値がＺＬ（＝ＲＬ＋ｊ・ＸＬ）であり、ＺＬの実部（ＲＬ）は、ＲＬ＞０．６４×Ｖｄ＿ｎ＋０．１９（Ω・ｍｍ）で、かつ、ＲＬ＜０．６４×Ｖｄ＿ｎ＋１．７３（Ω・ｍｍ）である。
PCT/JP2008/066095 2007-10-31 2008-09-05 電力増幅器、電力増幅器の制御方法 WO2009057385A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009538976A JP5141690B2 (ja) 2007-10-31 2008-09-05 電力増幅器、電力増幅器の制御方法
US12/682,175 US8326244B2 (en) 2007-10-31 2008-09-05 Power amplifier, and method of controlling power amplifier
CN200880113793.0A CN101842978B (zh) 2007-10-31 2008-09-05 功率放大器及控制功率放大器的方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-283539 2007-10-31
JP2007283539 2007-10-31
JP2008131772 2008-05-20
JP2008-131772 2008-05-20

Publications (1)

Publication Number Publication Date
WO2009057385A1 true WO2009057385A1 (ja) 2009-05-07

Family

ID=40590786

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066095 WO2009057385A1 (ja) 2007-10-31 2008-09-05 電力増幅器、電力増幅器の制御方法

Country Status (5)

Country Link
US (1) US8326244B2 (ja)
JP (1) JP5141690B2 (ja)
CN (1) CN101842978B (ja)
TW (1) TWI397256B (ja)
WO (1) WO2009057385A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013136649A1 (ja) * 2012-03-16 2013-09-19 パナソニック株式会社 無線通信装置
JP2015149593A (ja) * 2014-02-06 2015-08-20 株式会社東芝 増幅器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2346175B1 (en) * 2010-01-15 2015-03-11 Telefonaktiebolaget L M Ericsson A method and apparatuses for transmitter to multi-carrier power amplifier configuration
JP5720927B2 (ja) * 2010-10-25 2015-05-20 ソニー株式会社 受信装置及び方法、復調装置及び方法、並びにプログラム
JP5896718B2 (ja) * 2011-02-04 2016-03-30 日本電波工業株式会社 圧電発振器
US8779868B2 (en) 2011-03-10 2014-07-15 Harris Corporation Mobile wireless communications device with adjustable impedance matching network and associated methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168721A (ja) * 1988-12-21 1990-06-28 Nec Corp 論理回路
JP2001156554A (ja) * 1999-10-08 2001-06-08 Ma-Com Eurotec インターリーブされたデルタ変調を使用してデジタル情報を送信する装置及び方法
JP2001257544A (ja) * 2000-03-13 2001-09-21 Hitachi Kokusai Electric Inc Ｍｏｓ−ｆｅｔ増幅回路
JP2005518745A (ja) * 2002-02-21 2005-06-23 エリクソン インコーポレイテッド 増幅器のインピーダンスを動的に補償する電流変調器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09330344A (ja) 1996-06-10 1997-12-22 Mitsubishi Electric Corp 半導体装置の設計支援装置および設計支援方法
JP2000174559A (ja) 1998-12-03 2000-06-23 Mitsubishi Electric Corp マイクロ波電力増幅装置
JP2000323709A (ja) 1999-03-09 2000-11-24 Fujitsu Ltd ホットキャリア劣化シミュレーション方法、半導体装置の製造方法、およびコンピュータ可読記録媒体
EP1096670A3 (en) * 1999-10-08 2003-10-29 M/A-Com Eurotec System and method for transmitting digital information using interleaved delta modulation
JP4095753B2 (ja) 2000-03-30 2008-06-04 株式会社ルネサステクノロジ コンピュータ読み取り可能な記憶媒体、および半導体装置の設計方法
JP3932259B2 (ja) * 2001-12-12 2007-06-20 株式会社ルネサステクノロジ 高周波電力増幅回路および無線通信用電子部品
JP2003298364A (ja) 2002-04-03 2003-10-17 Hitachi Ltd 高周波電力増幅器
JP4255703B2 (ja) 2003-01-29 2009-04-15 三菱電機株式会社 カスコード電力増幅器
JP2005259777A (ja) 2004-03-09 2005-09-22 Matsushita Electric Ind Co Ltd 半導体装置の信頼性シミュレーション方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168721A (ja) * 1988-12-21 1990-06-28 Nec Corp 論理回路
JP2001156554A (ja) * 1999-10-08 2001-06-08 Ma-Com Eurotec インターリーブされたデルタ変調を使用してデジタル情報を送信する装置及び方法
JP2001257544A (ja) * 2000-03-13 2001-09-21 Hitachi Kokusai Electric Inc Ｍｏｓ−ｆｅｔ増幅回路
JP2005518745A (ja) * 2002-02-21 2005-06-23 エリクソン インコーポレイテッド 増幅器のインピーダンスを動的に補償する電流変調器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013136649A1 (ja) * 2012-03-16 2013-09-19 パナソニック株式会社 無線通信装置
US9160278B2 (en) 2012-03-16 2015-10-13 Panasonic Corporation Wireless communication device
JP2015149593A (ja) * 2014-02-06 2015-08-20 株式会社東芝 増幅器

Also Published As

Publication number Publication date
CN101842978B (zh) 2014-03-12
US20100225399A1 (en) 2010-09-09
TWI397256B (zh) 2013-05-21
JPWO2009057385A1 (ja) 2011-03-10
TW200937846A (en) 2009-09-01
CN101842978A (zh) 2010-09-22
JP5141690B2 (ja) 2013-02-13
US8326244B2 (en) 2012-12-04

Similar Documents

Publication Publication Date Title
EP1885066A3 (en) Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
WO2009057385A1 (ja) 電力増幅器、電力増幅器の制御方法
TW200943529A (en) Integration of a sense FET into a discrete power MOSFET
WO2011026799A3 (en) Coupling circuit, driver circuit and method for controlling a coupling circuit
WO2007018944A3 (en) Gate electrode structures and methods of manufacture
WO2008116038A3 (en) Cascode circuit employing a depletion-mode, gan-based fet
WO2006116710A3 (en) System and method for driving a power field-effect transistor (fet)
WO2011079194A3 (en) Mosfet with gate pull-down
TW200605482A (en) Precharge circuit for dc/dc boost converter startup
WO2009042419A3 (en) Voltage/current control apparatus and method
EP2071726A3 (en) Load driving device
TW200705789A (en) Step-up switching regulator and its control circuit and electronic apparatus employing it
WO2007076063A3 (en) High mobility power metal-oxide semiconductor field-effect transistors
AU2003230038A1 (en) Reference circuit
TW200731669A (en) Bootstrap inverter circuit
WO2002029949A3 (en) Semiconductor device with protective functions
TW200637122A (en) Improved MOSFET for synchronous rectification
WO2008009827A3 (fr) Circuit d'alimentation d'un moteur pourvu d'un organe assurant une commutation de puissance, une protection contre une inversion de polarites et une limitation du courant d'appel d'un élément capacitif
EP1244202A3 (en) Semiconductor device
ATE313109T1 (de) Stromquellenschaltung
TW200743806A (en) Semiconductor device with pad switch
WO2011077253A8 (en) Start-up supply
TW200841145A (en) A gate driving circuit
EP2136471A3 (en) Logic circuits, inverter devices and methods of operating the same
WO2008015462A3 (en) Power supply circuit

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880113793.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08844042

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12682175

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2009538976

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08844042

Country of ref document: EP

Kind code of ref document: A1