JP2005515633A - 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 - Google Patents

窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 Download PDF

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JP2005515633A
JP2005515633A JP2003560976A JP2003560976A JP2005515633A JP 2005515633 A JP2005515633 A JP 2005515633A JP 2003560976 A JP2003560976 A JP 2003560976A JP 2003560976 A JP2003560976 A JP 2003560976A JP 2005515633 A JP2005515633 A JP 2005515633A
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wafer
concentration
temperature
nitrogen
front surface
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JP2005515633A5 (https=
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ムレ・スタグノ・ルチアーノ
ジェフリー・エル・リバート
リチャード・ジェイ・フィリップス
ミリンド・クルカーニ
モーセン・バナン
スティーブン・ジェイ・ブランクホースト
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SunEdison Inc
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MEMC Electronic Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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JP2003560976A 2001-12-21 2002-12-23 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 Pending JP2005515633A (ja)

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US34517801P 2001-12-21 2001-12-21
PCT/US2002/041269 WO2003060982A2 (en) 2001-12-21 2002-12-23 Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same

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JP2005515633A5 JP2005515633A5 (https=) 2006-01-05

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JP2010041629A Withdrawn JP2010161393A (ja) 2001-12-21 2010-02-26 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法

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EP (1) EP1456875A2 (https=)
JP (2) JP2005515633A (https=)
KR (3) KR100920862B1 (https=)
CN (1) CN100345263C (https=)
TW (1) TWI276161B (https=)
WO (1) WO2003060982A2 (https=)

Cited By (3)

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WO2008004379A1 (fr) * 2006-07-06 2008-01-10 Shin-Etsu Handotai Co., Ltd. Procédé de fabrication de tranche de silicium
JP2010103423A (ja) * 2008-10-27 2010-05-06 Seiko Epson Corp 発振回路及び半導体装置
WO2019187844A1 (ja) * 2018-03-28 2019-10-03 住友精密工業株式会社 Ｍｅｍｓデバイスの製造方法、ｍｅｍｓデバイス及びそれを用いたシャッタ装置

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CN100461349C (zh) * 2003-10-21 2009-02-11 株式会社上睦可 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP5090451B2 (ja) * 2006-07-31 2012-12-05 アプライド マテリアルズ インコーポレイテッド 炭素含有シリコンエピタキシャル層の形成方法
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
KR101231412B1 (ko) 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
KR101395359B1 (ko) * 2012-02-27 2014-05-14 주식회사 엘지실트론 단결정 실리콘 잉곳인상방법, 및 그 방법을 위한 시드
JP5793456B2 (ja) 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN106884203A (zh) * 2015-12-15 2017-06-23 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151818A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
WO2018008561A1 (ja) 2016-07-06 2018-01-11 株式会社トクヤマ 単結晶シリコン板状体およびその製造方法
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN108660509A (zh) * 2017-03-27 2018-10-16 上海新昇半导体科技有限公司 一种直拉单晶硅方法
US10943813B2 (en) 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法

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JPH08290995A (ja) * 1995-04-19 1996-11-05 Sumitomo Metal Ind Ltd シリコン単結晶及びその製造方法
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
JPH10150048A (ja) * 1996-11-15 1998-06-02 Sumitomo Sitix Corp 半導体基板
JPH11322490A (ja) * 1998-03-09 1999-11-24 Shin Etsu Handotai Co Ltd シリコン単結晶ウエ―ハの製造方法およびシリコン単結晶ウエ―ハ
WO2000013211A2 (en) * 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP2001007116A (ja) * 1999-05-28 2001-01-12 Wacker Siltronic G Fuer Halbleitermaterialien Ag 結晶格子欠陥を有する半導体ディスク及びその製造法
JP2001503009A (ja) * 1997-04-09 2001-03-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 低欠陥密度の理想的酸素析出シリコン
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ
JP2002176058A (ja) * 2000-12-11 2002-06-21 Sumitomo Metal Ind Ltd シリコン半導体基板の製造方法

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US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
GB9700566D0 (en) * 1997-01-13 1997-03-05 Avx Ltd Binder removal
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP4405082B2 (ja) * 1998-09-02 2010-01-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 内部ゲッタリング性の改良された熱アニーリングされたウエハ
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
EP1195455B1 (en) * 2000-01-25 2011-04-13 Shin-Etsu Handotai Co., Ltd. Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
DE10024710A1 (de) * 2000-05-18 2001-12-20 Steag Rtp Systems Gmbh Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen

Patent Citations (9)

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JPH08290995A (ja) * 1995-04-19 1996-11-05 Sumitomo Metal Ind Ltd シリコン単結晶及びその製造方法
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
JPH10150048A (ja) * 1996-11-15 1998-06-02 Sumitomo Sitix Corp 半導体基板
JP2001503009A (ja) * 1997-04-09 2001-03-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 低欠陥密度の理想的酸素析出シリコン
JPH11322490A (ja) * 1998-03-09 1999-11-24 Shin Etsu Handotai Co Ltd シリコン単結晶ウエ―ハの製造方法およびシリコン単結晶ウエ―ハ
WO2000013211A2 (en) * 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP2001007116A (ja) * 1999-05-28 2001-01-12 Wacker Siltronic G Fuer Halbleitermaterialien Ag 結晶格子欠陥を有する半導体ディスク及びその製造法
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ
JP2002176058A (ja) * 2000-12-11 2002-06-21 Sumitomo Metal Ind Ltd シリコン半導体基板の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008004379A1 (fr) * 2006-07-06 2008-01-10 Shin-Etsu Handotai Co., Ltd. Procédé de fabrication de tranche de silicium
JP2008016652A (ja) * 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
JP2010103423A (ja) * 2008-10-27 2010-05-06 Seiko Epson Corp 発振回路及び半導体装置
WO2019187844A1 (ja) * 2018-03-28 2019-10-03 住友精密工業株式会社 Ｍｅｍｓデバイスの製造方法、ｍｅｍｓデバイス及びそれを用いたシャッタ装置
JPWO2019187844A1 (ja) * 2018-03-28 2021-04-01 住友精密工業株式会社 Ｍｅｍｓデバイスの製造方法、ｍｅｍｓデバイス及びそれを用いたシャッタ装置
JP7263319B2 (ja) 2018-03-28 2023-04-24 住友精密工業株式会社 Ｍｅｍｓデバイスの製造方法、ｍｅｍｓデバイス及びそれを用いたシャッタ装置
US11932535B2 (en) 2018-03-28 2024-03-19 Sumitomo Precision Products Co., Ltd. MEMS device manufacturing method, MEMS device, and shutter apparatus using the same

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Publication number Publication date
WO2003060982A3 (en) 2004-03-11
KR20040076872A (ko) 2004-09-03
KR100920862B1 (ko) 2009-10-09
WO2003060982A2 (en) 2003-07-24
TW200305932A (en) 2003-11-01
TWI276161B (en) 2007-03-11
JP2010161393A (ja) 2010-07-22
KR20070039175A (ko) 2007-04-11
KR100973393B1 (ko) 2010-07-30
CN100345263C (zh) 2007-10-24
KR20090092844A (ko) 2009-09-01
KR100745308B1 (ko) 2007-08-01
CN1606799A (zh) 2005-04-13
EP1456875A2 (en) 2004-09-15

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