CN100345263C - 具有氮/碳稳定的氧沉淀物成核中心的硅片及其制造方法 - Google Patents

具有氮/碳稳定的氧沉淀物成核中心的硅片及其制造方法 Download PDF

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Publication number
CN100345263C
CN100345263C CNB028256816A CN02825681A CN100345263C CN 100345263 C CN100345263 C CN 100345263C CN B028256816 A CNB028256816 A CN B028256816A CN 02825681 A CN02825681 A CN 02825681A CN 100345263 C CN100345263 C CN 100345263C
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China
Prior art keywords
wafer
front surface
concentration
oxygen
nitrogen
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Expired - Fee Related
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CNB028256816A
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English (en)
Chinese (zh)
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CN1606799A (zh
Inventor
M·S·卢西亚诺
J·L·利伯特
R·J·菲利普斯
M·库尔卡尼
M·巴南
S·J·布伦克霍斯特
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SunEdison Inc
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SunEdison Inc
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Publication of CN1606799A publication Critical patent/CN1606799A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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  • Crystals, And After-Treatments Of Crystals (AREA)
CNB028256816A 2001-12-21 2002-12-23 具有氮/碳稳定的氧沉淀物成核中心的硅片及其制造方法 Expired - Fee Related CN100345263C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34517801P 2001-12-21 2001-12-21
US60/345,178 2001-12-21

Publications (2)

Publication Number Publication Date
CN1606799A CN1606799A (zh) 2005-04-13
CN100345263C true CN100345263C (zh) 2007-10-24

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Family Applications (1)

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CNB028256816A Expired - Fee Related CN100345263C (zh) 2001-12-21 2002-12-23 具有氮/碳稳定的氧沉淀物成核中心的硅片及其制造方法

Country Status (6)

Country Link
EP (1) EP1456875A2 (https=)
JP (2) JP2005515633A (https=)
KR (3) KR100920862B1 (https=)
CN (1) CN100345263C (https=)
TW (1) TWI276161B (https=)
WO (1) WO2003060982A2 (https=)

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CN105316767A (zh) * 2015-06-04 2016-02-10 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用

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CN100461349C (zh) * 2003-10-21 2009-02-11 株式会社上睦可 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2008016652A (ja) * 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
JP5090451B2 (ja) * 2006-07-31 2012-12-05 アプライド マテリアルズ インコーポレイテッド 炭素含有シリコンエピタキシャル層の形成方法
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
JP5332502B2 (ja) * 2008-10-27 2013-11-06 セイコーエプソン株式会社 発振回路及び半導体装置
KR101231412B1 (ko) 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
KR101395359B1 (ko) * 2012-02-27 2014-05-14 주식회사 엘지실트론 단결정 실리콘 잉곳인상방법, 및 그 방법을 위한 시드
JP5793456B2 (ja) 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
CN106884203A (zh) * 2015-12-15 2017-06-23 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151818A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
WO2018008561A1 (ja) 2016-07-06 2018-01-11 株式会社トクヤマ 単結晶シリコン板状体およびその製造方法
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN108660509A (zh) * 2017-03-27 2018-10-16 上海新昇半导体科技有限公司 一种直拉单晶硅方法
US11932535B2 (en) 2018-03-28 2024-03-19 Sumitomo Precision Products Co., Ltd. MEMS device manufacturing method, MEMS device, and shutter apparatus using the same
US10943813B2 (en) 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法

Citations (5)

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WO1998045507A1 (en) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
EP0942078A1 (en) * 1998-03-09 1999-09-15 Shin-Etsu Handotai Company Limited Method for producing silicon single crystal wafer and silicon single crystal wafer
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20010030348A1 (en) * 1998-09-02 2001-10-18 Falster Robert J. Silcon on insulator structrue having a low defect density handler wafer and process for the preparation thereof
US6306733B1 (en) * 1997-02-26 2001-10-23 Memc Electronic Materials, Spa Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor

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US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JPH08290995A (ja) * 1995-04-19 1996-11-05 Sumitomo Metal Ind Ltd シリコン単結晶及びその製造方法
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
JPH10150048A (ja) * 1996-11-15 1998-06-02 Sumitomo Sitix Corp 半導体基板
GB9700566D0 (en) * 1997-01-13 1997-03-05 Avx Ltd Binder removal
JP3614019B2 (ja) * 1998-03-09 2005-01-26 信越半導体株式会社 シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハ
JP4405082B2 (ja) * 1998-09-02 2010-01-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 内部ゲッタリング性の改良された熱アニーリングされたウエハ
DE19925044B4 (de) * 1999-05-28 2005-07-21 Siltronic Ag Halbleiterscheibe mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
EP1195455B1 (en) * 2000-01-25 2011-04-13 Shin-Etsu Handotai Co., Ltd. Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ
DE10024710A1 (de) * 2000-05-18 2001-12-20 Steag Rtp Systems Gmbh Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen
JP2002176058A (ja) * 2000-12-11 2002-06-21 Sumitomo Metal Ind Ltd シリコン半導体基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306733B1 (en) * 1997-02-26 2001-10-23 Memc Electronic Materials, Spa Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
WO1998045507A1 (en) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
EP0942078A1 (en) * 1998-03-09 1999-09-15 Shin-Etsu Handotai Company Limited Method for producing silicon single crystal wafer and silicon single crystal wafer
US20010030348A1 (en) * 1998-09-02 2001-10-18 Falster Robert J. Silcon on insulator structrue having a low defect density handler wafer and process for the preparation thereof
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105316767A (zh) * 2015-06-04 2016-02-10 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用

Also Published As

Publication number Publication date
WO2003060982A3 (en) 2004-03-11
KR20040076872A (ko) 2004-09-03
KR100920862B1 (ko) 2009-10-09
JP2005515633A (ja) 2005-05-26
WO2003060982A2 (en) 2003-07-24
TW200305932A (en) 2003-11-01
TWI276161B (en) 2007-03-11
JP2010161393A (ja) 2010-07-22
KR20070039175A (ko) 2007-04-11
KR100973393B1 (ko) 2010-07-30
KR20090092844A (ko) 2009-09-01
KR100745308B1 (ko) 2007-08-01
CN1606799A (zh) 2005-04-13
EP1456875A2 (en) 2004-09-15

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