KR100920862B1 - 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법 - Google Patents

질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법 Download PDF

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KR100920862B1
KR100920862B1 KR1020077006698A KR20077006698A KR100920862B1 KR 100920862 B1 KR100920862 B1 KR 100920862B1 KR 1020077006698 A KR1020077006698 A KR 1020077006698A KR 20077006698 A KR20077006698 A KR 20077006698A KR 100920862 B1 KR100920862 B1 KR 100920862B1
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wafer
oxygen
concentration
silicon
layer
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KR20070039175A (ko
Inventor
물레' 스타그노 루시아노
제프리 엘. 리버트
리차드 제이. 필립스
밀린드 쿨카르니
모흐센 바난
스테판 제이. 브런크호르스트
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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KR1020077006698A 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법 Expired - Fee Related KR100920862B1 (ko)

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US34517801P 2001-12-21 2001-12-21
US60/345,178 2001-12-21

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KR1020047009764A Division KR100745308B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진이상적인 산소 침전 실리콘 웨이퍼 및 그 제조 방법

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KR1020097015328A Division KR100973393B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼

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KR20070039175A KR20070039175A (ko) 2007-04-11
KR100920862B1 true KR100920862B1 (ko) 2009-10-09

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KR1020077006698A Expired - Fee Related KR100920862B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법
KR1020047009764A Expired - Fee Related KR100745308B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진이상적인 산소 침전 실리콘 웨이퍼 및 그 제조 방법
KR1020097015328A Expired - Fee Related KR100973393B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼

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KR1020047009764A Expired - Fee Related KR100745308B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진이상적인 산소 침전 실리콘 웨이퍼 및 그 제조 방법
KR1020097015328A Expired - Fee Related KR100973393B1 (ko) 2001-12-21 2002-12-23 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼

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EP (1) EP1456875A2 (https=)
JP (2) JP2005515633A (https=)
KR (3) KR100920862B1 (https=)
CN (1) CN100345263C (https=)
TW (1) TWI276161B (https=)
WO (1) WO2003060982A2 (https=)

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CN100461349C (zh) * 2003-10-21 2009-02-11 株式会社上睦可 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2008016652A (ja) * 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
JP5090451B2 (ja) * 2006-07-31 2012-12-05 アプライド マテリアルズ インコーポレイテッド 炭素含有シリコンエピタキシャル層の形成方法
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
JP5332502B2 (ja) * 2008-10-27 2013-11-06 セイコーエプソン株式会社 発振回路及び半導体装置
KR101231412B1 (ko) 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
KR101395359B1 (ko) * 2012-02-27 2014-05-14 주식회사 엘지실트론 단결정 실리콘 잉곳인상방법, 및 그 방법을 위한 시드
JP5793456B2 (ja) 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN106884203A (zh) * 2015-12-15 2017-06-23 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151818A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
WO2018008561A1 (ja) 2016-07-06 2018-01-11 株式会社トクヤマ 単結晶シリコン板状体およびその製造方法
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN108660509A (zh) * 2017-03-27 2018-10-16 上海新昇半导体科技有限公司 一种直拉单晶硅方法
US11932535B2 (en) 2018-03-28 2024-03-19 Sumitomo Precision Products Co., Ltd. MEMS device manufacturing method, MEMS device, and shutter apparatus using the same
US10943813B2 (en) 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法

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KR20010105392A (ko) * 2000-01-25 2001-11-28 와다 다다시 실리콘 웨이퍼 및 실리콘 단결정 제조조건을 결정하는방법 및 실리콘 웨이퍼 제조방법

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TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
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KR20010105392A (ko) * 2000-01-25 2001-11-28 와다 다다시 실리콘 웨이퍼 및 실리콘 단결정 제조조건을 결정하는방법 및 실리콘 웨이퍼 제조방법

Also Published As

Publication number Publication date
WO2003060982A3 (en) 2004-03-11
KR20040076872A (ko) 2004-09-03
JP2005515633A (ja) 2005-05-26
WO2003060982A2 (en) 2003-07-24
TW200305932A (en) 2003-11-01
TWI276161B (en) 2007-03-11
JP2010161393A (ja) 2010-07-22
KR20070039175A (ko) 2007-04-11
KR100973393B1 (ko) 2010-07-30
CN100345263C (zh) 2007-10-24
KR20090092844A (ko) 2009-09-01
KR100745308B1 (ko) 2007-08-01
CN1606799A (zh) 2005-04-13
EP1456875A2 (en) 2004-09-15

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