JP2005515633A5 - - Google Patents
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- Publication number
- JP2005515633A5 JP2005515633A5 JP2003560976A JP2003560976A JP2005515633A5 JP 2005515633 A5 JP2005515633 A5 JP 2005515633A5 JP 2003560976 A JP2003560976 A JP 2003560976A JP 2003560976 A JP2003560976 A JP 2003560976A JP 2005515633 A5 JP2005515633 A5 JP 2005515633A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- concentration
- temperature
- front surface
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 32
- 239000001301 oxygen Substances 0.000 claims 32
- 229910052760 oxygen Inorganic materials 0.000 claims 32
- 239000010410 layer Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 26
- 230000006911 nucleation Effects 0.000 claims 23
- 238000001556 precipitation Methods 0.000 claims 22
- 229910052757 nitrogen Inorganic materials 0.000 claims 21
- 239000002019 doping agent Substances 0.000 claims 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 16
- 229910052799 carbon Inorganic materials 0.000 claims 16
- 239000002344 surface layer Substances 0.000 claims 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 10
- 238000001816 cooling Methods 0.000 claims 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 9
- 238000010899 nucleation Methods 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 229910052786 argon Inorganic materials 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 239000001569 carbon dioxide Substances 0.000 claims 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 3
- 230000007423 decrease Effects 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052754 neon Inorganic materials 0.000 claims 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 3
- 239000002244 precipitate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34517801P | 2001-12-21 | 2001-12-21 | |
| PCT/US2002/041269 WO2003060982A2 (en) | 2001-12-21 | 2002-12-23 | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010041629A Division JP2010161393A (ja) | 2001-12-21 | 2010-02-26 | 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005515633A JP2005515633A (ja) | 2005-05-26 |
| JP2005515633A5 true JP2005515633A5 (https=) | 2006-01-05 |
Family
ID=23353888
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003560976A Pending JP2005515633A (ja) | 2001-12-21 | 2002-12-23 | 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 |
| JP2010041629A Withdrawn JP2010161393A (ja) | 2001-12-21 | 2010-02-26 | 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010041629A Withdrawn JP2010161393A (ja) | 2001-12-21 | 2010-02-26 | 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1456875A2 (https=) |
| JP (2) | JP2005515633A (https=) |
| KR (3) | KR100920862B1 (https=) |
| CN (1) | CN100345263C (https=) |
| TW (1) | TWI276161B (https=) |
| WO (1) | WO2003060982A2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461349C (zh) * | 2003-10-21 | 2009-02-11 | 株式会社上睦可 | 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法 |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| JP2008016652A (ja) * | 2006-07-06 | 2008-01-24 | Shin Etsu Handotai Co Ltd | シリコンウェーハの製造方法 |
| JP5090451B2 (ja) * | 2006-07-31 | 2012-12-05 | アプライド マテリアルズ インコーポレイテッド | 炭素含有シリコンエピタキシャル層の形成方法 |
| FR2928775B1 (fr) * | 2008-03-11 | 2011-12-09 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de type semiconducteur sur isolant |
| JP5332502B2 (ja) * | 2008-10-27 | 2013-11-06 | セイコーエプソン株式会社 | 発振回路及び半導体装置 |
| KR101231412B1 (ko) | 2009-12-29 | 2013-02-07 | 실트로닉 아게 | 실리콘 웨이퍼 및 그 제조 방법 |
| KR101395359B1 (ko) * | 2012-02-27 | 2014-05-14 | 주식회사 엘지실트론 | 단결정 실리콘 잉곳인상방법, 및 그 방법을 위한 시드 |
| JP5793456B2 (ja) | 2012-03-23 | 2015-10-14 | 株式会社東芝 | 半導体装置およびその製造方法、基板 |
| CN105316767B (zh) * | 2015-06-04 | 2019-09-24 | 上海超硅半导体有限公司 | 超大规模集成电路用硅片及其制造方法、应用 |
| CN106884203A (zh) * | 2015-12-15 | 2017-06-23 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
| CN107151817A (zh) * | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | 单晶硅的生长方法及其制备的单晶硅锭 |
| CN107151818A (zh) * | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | 单晶硅的生长方法及其制备的单晶硅锭 |
| WO2018008561A1 (ja) | 2016-07-06 | 2018-01-11 | 株式会社トクヤマ | 単結晶シリコン板状体およびその製造方法 |
| CN107604429A (zh) * | 2016-07-12 | 2018-01-19 | 上海新昇半导体科技有限公司 | 直拉生长单晶硅的方法 |
| CN108660509A (zh) * | 2017-03-27 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种直拉单晶硅方法 |
| US11932535B2 (en) | 2018-03-28 | 2024-03-19 | Sumitomo Precision Products Co., Ltd. | MEMS device manufacturing method, MEMS device, and shutter apparatus using the same |
| US10943813B2 (en) | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
| JP7207204B2 (ja) * | 2019-07-02 | 2023-01-18 | 信越半導体株式会社 | 炭素ドープシリコン単結晶ウェーハの製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5024723A (en) | 1990-05-07 | 1991-06-18 | Goesele Ulrich M | Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| JPH08290995A (ja) * | 1995-04-19 | 1996-11-05 | Sumitomo Metal Ind Ltd | シリコン単結晶及びその製造方法 |
| JPH0964319A (ja) * | 1995-08-28 | 1997-03-07 | Toshiba Corp | Ｓｏｉ基板およびその製造方法 |
| JPH10150048A (ja) * | 1996-11-15 | 1998-06-02 | Sumitomo Sitix Corp | 半導体基板 |
| GB9700566D0 (en) * | 1997-01-13 | 1997-03-05 | Avx Ltd | Binder removal |
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| US6190631B1 (en) * | 1997-04-09 | 2001-02-20 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| JP3614019B2 (ja) * | 1998-03-09 | 2005-01-26 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハ |
| TW589415B (en) * | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
| JP4405082B2 (ja) * | 1998-09-02 | 2010-01-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 内部ゲッタリング性の改良された熱アニーリングされたウエハ |
| EP1114454A2 (en) * | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| DE19925044B4 (de) * | 1999-05-28 | 2005-07-21 | Siltronic Ag | Halbleiterscheibe mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben |
| EP1195455B1 (en) * | 2000-01-25 | 2011-04-13 | Shin-Etsu Handotai Co., Ltd. | Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer |
| JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
| DE10024710A1 (de) * | 2000-05-18 | 2001-12-20 | Steag Rtp Systems Gmbh | Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen |
| JP2002176058A (ja) * | 2000-12-11 | 2002-06-21 | Sumitomo Metal Ind Ltd | シリコン半導体基板の製造方法 |
-
2002
- 2002-12-23 JP JP2003560976A patent/JP2005515633A/ja active Pending
- 2002-12-23 CN CNB028256816A patent/CN100345263C/zh not_active Expired - Fee Related
- 2002-12-23 KR KR1020077006698A patent/KR100920862B1/ko not_active Expired - Fee Related
- 2002-12-23 KR KR1020047009764A patent/KR100745308B1/ko not_active Expired - Fee Related
- 2002-12-23 TW TW091137013A patent/TWI276161B/zh not_active IP Right Cessation
- 2002-12-23 WO PCT/US2002/041269 patent/WO2003060982A2/en not_active Ceased
- 2002-12-23 KR KR1020097015328A patent/KR100973393B1/ko not_active Expired - Fee Related
- 2002-12-23 EP EP02799299A patent/EP1456875A2/en not_active Ceased
-
2010
- 2010-02-26 JP JP2010041629A patent/JP2010161393A/ja not_active Withdrawn
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