JP2005510871A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2005510871A
JP2005510871A JP2003548292A JP2003548292A JP2005510871A JP 2005510871 A JP2005510871 A JP 2005510871A JP 2003548292 A JP2003548292 A JP 2003548292A JP 2003548292 A JP2003548292 A JP 2003548292A JP 2005510871 A JP2005510871 A JP 2005510871A
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JP
Japan
Prior art keywords
surface layer
amorphous
semiconductor
dopant atoms
radiation
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Pending
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JP2003548292A
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English (en)
Japanese (ja)
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JP2005510871A5 (https=
Inventor
ピーター、アー．ストルク
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2005510871A publication Critical patent/JP2005510871A/ja
Publication of JP2005510871A5 publication Critical patent/JP2005510871A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2003548292A 2001-11-30 2002-11-20 半導体装置の製造方法 Pending JP2005510871A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01204625 2001-11-30
PCT/IB2002/004881 WO2003046967A2 (en) 2001-11-30 2002-11-20 Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation

Publications (2)

Publication Number Publication Date
JP2005510871A true JP2005510871A (ja) 2005-04-21
JP2005510871A5 JP2005510871A5 (https=) 2006-01-12

Family

ID=8181336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003548292A Pending JP2005510871A (ja) 2001-11-30 2002-11-20 半導体装置の製造方法

Country Status (7)

Country Link
US (1) US6982212B2 (https=)
EP (1) EP1459366A2 (https=)
JP (1) JP2005510871A (https=)
KR (1) KR20040054811A (https=)
AU (1) AU2002348835A1 (https=)
TW (1) TWI268576B (https=)
WO (1) WO2003046967A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009529245A (ja) * 2006-03-08 2009-08-13 アプライド マテリアルズ インコーポレイテッド 基板に形成された熱処理構造用の方法および装置
JP2013128030A (ja) * 2011-12-19 2013-06-27 Sanken Electric Co Ltd 半導体装置の製造方法、半導体装置
JP2014060423A (ja) * 2006-03-08 2014-04-03 Applied Materials Inc 基板に形成された熱処理構造用の方法および装置
JP2018032786A (ja) * 2016-08-25 2018-03-01 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
KR20190015262A (ko) * 2016-05-31 2019-02-13 레이저 시스템즈 앤드 솔루션즈 오브 유럽 디이프 접합 전자 소자 및 그의 제조 공정

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3737504B2 (ja) * 2004-03-31 2006-01-18 松下電器産業株式会社 半導体装置の製造方法
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
JP2006066686A (ja) * 2004-08-27 2006-03-09 Matsushita Electric Ind Co Ltd 不純物導入方法および不純物導入装置
US7091097B1 (en) * 2004-09-03 2006-08-15 Advanced Micro Devices, Inc. End-of-range defect minimization in semiconductor device
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
KR100732630B1 (ko) * 2006-02-01 2007-06-27 삼성전자주식회사 불순물 도핑 영역을 포함하는 반도체 소자 및 그 형성 방법
US7759773B2 (en) 2007-02-26 2010-07-20 International Business Machines Corporation Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity
US7679166B2 (en) * 2007-02-26 2010-03-16 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US20090096066A1 (en) * 2007-10-10 2009-04-16 Anderson Brent A Structure and Method for Device-Specific Fill for Improved Anneal Uniformity
US7745909B2 (en) * 2007-02-26 2010-06-29 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US7692275B2 (en) * 2007-02-26 2010-04-06 International Business Machines Corporation Structure and method for device-specific fill for improved anneal uniformity
US8138066B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
MY160016A (en) 2009-03-09 2017-02-15 1366 Tech Inc Methods and apparati for making thin semiconductor bodies from molten material
GB201112610D0 (en) * 2011-07-22 2011-09-07 Rec Wafer Norway As Heating a furnace for the growth of semiconductor material
US9597744B2 (en) * 2013-11-11 2017-03-21 Siemens Energy, Inc. Method for utilizing a braze material with carbon structures
DE102016114264B4 (de) * 2016-08-02 2024-10-24 Infineon Technologies Ag Herstellungsverfahren einschliesslich einer aktivierung von dotierstoffen
CN108807276A (zh) * 2017-05-05 2018-11-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN112885715A (zh) * 2021-01-08 2021-06-01 中国科学院微电子研究所 一种半导体器件的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
JPH01256124A (ja) * 1988-04-05 1989-10-12 Ricoh Co Ltd Ｍｏｓ型半導体装置の製造方法
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US5953615A (en) 1999-01-27 1999-09-14 Advance Micro Devices Pre-amorphization process for source/drain junction
US6777317B2 (en) * 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009529245A (ja) * 2006-03-08 2009-08-13 アプライド マテリアルズ インコーポレイテッド 基板に形成された熱処理構造用の方法および装置
JP2014060423A (ja) * 2006-03-08 2014-04-03 Applied Materials Inc 基板に形成された熱処理構造用の方法および装置
US10141191B2 (en) 2006-03-08 2018-11-27 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
US10840100B2 (en) 2006-03-08 2020-11-17 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
JP2013128030A (ja) * 2011-12-19 2013-06-27 Sanken Electric Co Ltd 半導体装置の製造方法、半導体装置
KR20190015262A (ko) * 2016-05-31 2019-02-13 레이저 시스템즈 앤드 솔루션즈 오브 유럽 디이프 접합 전자 소자 및 그의 제조 공정
JP2019523986A (ja) * 2016-05-31 2019-08-29 レーザー システムズ アンド ソリューションズ オブ ヨーロッパ 深い接合の電子装置及びその製造方法
KR102478873B1 (ko) 2016-05-31 2022-12-19 레이저 시스템즈 앤드 솔루션즈 오브 유럽 디이프 접합 전자 소자 및 그의 제조 공정
JP2018032786A (ja) * 2016-08-25 2018-03-01 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
WO2018037751A1 (ja) * 2016-08-25 2018-03-01 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法

Also Published As

Publication number Publication date
WO2003046967A3 (en) 2003-10-16
WO2003046967A2 (en) 2003-06-05
EP1459366A2 (en) 2004-09-22
TWI268576B (en) 2006-12-11
US20050003638A1 (en) 2005-01-06
TW200409293A (en) 2004-06-01
US6982212B2 (en) 2006-01-03
AU2002348835A1 (en) 2003-06-10
KR20040054811A (ko) 2004-06-25

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