JP2005322730A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2005322730A
JP2005322730A JP2004138550A JP2004138550A JP2005322730A JP 2005322730 A JP2005322730 A JP 2005322730A JP 2004138550 A JP2004138550 A JP 2004138550A JP 2004138550 A JP2004138550 A JP 2004138550A JP 2005322730 A JP2005322730 A JP 2005322730A
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JP
Japan
Prior art keywords
semiconductor
gate electrode
region
wiring
element formation
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Pending
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JP2004138550A
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English (en)
Japanese (ja)
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JP2005322730A5 (enExample
Inventor
Kota Funayama
幸太 舟山
Yasuko Yoshida
安子 吉田
Yasuaki Yonemochi
泰明 米持
Kazuhiko Sato
一彦 佐藤
Motomu Miyata
須 宮田
Nobuyuki Matsuo
修志 松尾
Kunihiro Koide
国宏 小出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004138550A priority Critical patent/JP2005322730A/ja
Publication of JP2005322730A publication Critical patent/JP2005322730A/ja
Publication of JP2005322730A5 publication Critical patent/JP2005322730A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004138550A 2004-05-07 2004-05-07 半導体装置及びその製造方法 Pending JP2005322730A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004138550A JP2005322730A (ja) 2004-05-07 2004-05-07 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004138550A JP2005322730A (ja) 2004-05-07 2004-05-07 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005322730A true JP2005322730A (ja) 2005-11-17
JP2005322730A5 JP2005322730A5 (enExample) 2007-06-07

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ID=35469788

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JP2004138550A Pending JP2005322730A (ja) 2004-05-07 2004-05-07 半導体装置及びその製造方法

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JP (1) JP2005322730A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173466A (ja) * 2005-12-21 2007-07-05 Toshiba Corp 半導体装置
JP2007235074A (ja) * 2006-03-03 2007-09-13 Fujitsu Ltd 半導体装置およびその製造方法
JP2009520363A (ja) * 2005-12-14 2009-05-21 フリースケール セミコンダクター インコーポレイテッド ストレッサを有する半導体デバイスおよびその製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251750A (ja) * 1988-03-31 1989-10-06 Toshiba Corp 半導体装置及びその製造方法
JPH0332056A (ja) * 1989-06-29 1991-02-12 Seiko Instr Inc Ｃｍｉｓ半導体装置の製造方法
JPH0371625A (ja) * 1989-08-10 1991-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH065603A (ja) * 1992-06-17 1994-01-14 Sony Corp 半導体装置
JPH0883852A (ja) * 1994-06-08 1996-03-26 Hyundai Electron Ind Co Ltd 半導体素子及びその製造方法
JPH08107153A (ja) * 1994-10-05 1996-04-23 Sony Corp 半導体装置の製造方法
JPH08167661A (ja) * 1994-12-14 1996-06-25 Fujitsu Ltd 半導体メモリ集積回路
JPH1050857A (ja) * 1996-08-02 1998-02-20 Sony Corp 半導体装置の製造方法
JPH1074846A (ja) * 1996-06-26 1998-03-17 Toshiba Corp 半導体装置及びその製造方法
JPH11176949A (ja) * 1997-12-15 1999-07-02 Sony Corp 半導体装置
JP2003179056A (ja) * 2001-12-11 2003-06-27 Fujitsu Ltd 半導体装置及びその製造方法
JP2003332457A (ja) * 1994-09-16 2003-11-21 Toshiba Corp 半導体装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251750A (ja) * 1988-03-31 1989-10-06 Toshiba Corp 半導体装置及びその製造方法
JPH0332056A (ja) * 1989-06-29 1991-02-12 Seiko Instr Inc Ｃｍｉｓ半導体装置の製造方法
JPH0371625A (ja) * 1989-08-10 1991-03-27 Fujitsu Ltd 半導体装置の製造方法
JPH065603A (ja) * 1992-06-17 1994-01-14 Sony Corp 半導体装置
JPH0883852A (ja) * 1994-06-08 1996-03-26 Hyundai Electron Ind Co Ltd 半導体素子及びその製造方法
JP2003332457A (ja) * 1994-09-16 2003-11-21 Toshiba Corp 半導体装置
JPH08107153A (ja) * 1994-10-05 1996-04-23 Sony Corp 半導体装置の製造方法
JPH08167661A (ja) * 1994-12-14 1996-06-25 Fujitsu Ltd 半導体メモリ集積回路
JPH1074846A (ja) * 1996-06-26 1998-03-17 Toshiba Corp 半導体装置及びその製造方法
JPH1050857A (ja) * 1996-08-02 1998-02-20 Sony Corp 半導体装置の製造方法
JPH11176949A (ja) * 1997-12-15 1999-07-02 Sony Corp 半導体装置
JP2003179056A (ja) * 2001-12-11 2003-06-27 Fujitsu Ltd 半導体装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009520363A (ja) * 2005-12-14 2009-05-21 フリースケール セミコンダクター インコーポレイテッド ストレッサを有する半導体デバイスおよびその製造方法
JP2007173466A (ja) * 2005-12-21 2007-07-05 Toshiba Corp 半導体装置
JP2007235074A (ja) * 2006-03-03 2007-09-13 Fujitsu Ltd 半導体装置およびその製造方法
US8749062B2 (en) 2006-03-03 2014-06-10 Fujitsu Semiconductor Limited Semiconductor device and process for producing the same
US9287168B2 (en) 2006-03-03 2016-03-15 Fujitsu Semiconductor Limited Semiconductor device and process for producing the same

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