JP2005294815A - 薄膜トランジスタ及び半導体装置 - Google Patents

薄膜トランジスタ及び半導体装置 Download PDF

Info

Publication number
JP2005294815A
JP2005294815A JP2005062667A JP2005062667A JP2005294815A JP 2005294815 A JP2005294815 A JP 2005294815A JP 2005062667 A JP2005062667 A JP 2005062667A JP 2005062667 A JP2005062667 A JP 2005062667A JP 2005294815 A JP2005294815 A JP 2005294815A
Authority
JP
Japan
Prior art keywords
gate electrode
layer
transistor
semiconductor layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005062667A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005294815A5 (enExample
Inventor
Tatsuya Arao
達也 荒尾
Hiroyuki Miyake
博之 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005062667A priority Critical patent/JP2005294815A/ja
Publication of JP2005294815A publication Critical patent/JP2005294815A/ja
Publication of JP2005294815A5 publication Critical patent/JP2005294815A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Shift Register Type Memory (AREA)
  • Thin Film Transistor (AREA)
JP2005062667A 2004-03-12 2005-03-07 薄膜トランジスタ及び半導体装置 Withdrawn JP2005294815A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005062667A JP2005294815A (ja) 2004-03-12 2005-03-07 薄膜トランジスタ及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004071793 2004-03-12
JP2005062667A JP2005294815A (ja) 2004-03-12 2005-03-07 薄膜トランジスタ及び半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012007224A Division JP5542262B2 (ja) 2004-03-12 2012-01-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2005294815A true JP2005294815A (ja) 2005-10-20
JP2005294815A5 JP2005294815A5 (enExample) 2008-04-10

Family

ID=35327351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005062667A Withdrawn JP2005294815A (ja) 2004-03-12 2005-03-07 薄膜トランジスタ及び半導体装置

Country Status (1)

Country Link
JP (1) JP2005294815A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023260A (ja) * 2010-07-16 2012-02-02 Hitachi Displays Ltd 表示装置
JP2013058797A (ja) * 2005-11-15 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置、及びダイオード
KR20140129695A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
JP2016028367A (ja) * 2006-09-29 2016-02-25 株式会社半導体エネルギー研究所 半導体装置
KR20190027408A (ko) * 2017-09-06 2019-03-15 삼성디스플레이 주식회사 박막트랜지스터를 포함하는 표시 장치 및 그 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06317812A (ja) * 1993-04-30 1994-11-15 Fuji Xerox Co Ltd アクティブマトリクス素子及びその製造方法
JP2000216397A (ja) * 1998-11-16 2000-08-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002328643A (ja) * 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 表示装置の駆動回路
JP2003197637A (ja) * 2001-12-27 2003-07-11 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP2003332578A (ja) * 2002-05-09 2003-11-21 Sharp Corp 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置
JP2004064528A (ja) * 2002-07-30 2004-02-26 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06317812A (ja) * 1993-04-30 1994-11-15 Fuji Xerox Co Ltd アクティブマトリクス素子及びその製造方法
JP2000216397A (ja) * 1998-11-16 2000-08-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002328643A (ja) * 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 表示装置の駆動回路
JP2003197637A (ja) * 2001-12-27 2003-07-11 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP2003332578A (ja) * 2002-05-09 2003-11-21 Sharp Corp 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置
JP2004064528A (ja) * 2002-07-30 2004-02-26 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013058797A (ja) * 2005-11-15 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置、及びダイオード
JP2016028367A (ja) * 2006-09-29 2016-02-25 株式会社半導体エネルギー研究所 半導体装置
US9606408B2 (en) 2006-09-29 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10048558B2 (en) 2006-09-29 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10527902B2 (en) 2006-09-29 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11237445B2 (en) 2006-09-29 2022-02-01 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2012023260A (ja) * 2010-07-16 2012-02-02 Hitachi Displays Ltd 表示装置
KR20140129695A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
KR102138280B1 (ko) 2013-04-30 2020-07-28 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
KR20190027408A (ko) * 2017-09-06 2019-03-15 삼성디스플레이 주식회사 박막트랜지스터를 포함하는 표시 장치 및 그 제조 방법
KR102486878B1 (ko) 2017-09-06 2023-01-11 삼성디스플레이 주식회사 박막트랜지스터를 포함하는 표시 장치 및 그 제조 방법

Similar Documents

Publication Publication Date Title
JP5542262B2 (ja) 半導体装置
JP7216862B2 (ja) 発光装置
US11056509B2 (en) Display device having a plurality of thin-film transistors with different semiconductors
KR101256446B1 (ko) 반도체 장치 및 그 제조 방법
JP4519532B2 (ja) 発光装置及び発光装置を用いた電子機器
US12029089B2 (en) Electroluminescent display device
JP2001109405A (ja) Ｅｌ表示装置
KR102177587B1 (ko) 유기전계 발광소자 및 이의 제조 방법
JP4731970B2 (ja) 発光装置及びその作製方法
US7863615B2 (en) Display unit and method of manufacturing the same
JP2005294815A (ja) 薄膜トランジスタ及び半導体装置
EP4016634B1 (en) Display panel and method for fabricating the same

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110607

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110720

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111220

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120117

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120118