JP2005286318A - 窒化ガリウム系半導体素子 - Google Patents
窒化ガリウム系半導体素子 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000010410 layer Substances 0.000 claims abstract description 199
- 239000001257 hydrogen Substances 0.000 claims abstract description 68
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 68
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000012535 impurity Substances 0.000 claims abstract description 47
- 239000002344 surface layer Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- UZVHFVZFNXBMQJ-UHFFFAOYSA-N butalbital Chemical group CC(C)CC1(CC=C)C(=O)NC(=O)NC1=O UZVHFVZFNXBMQJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000001816 cooling Methods 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 17
- 239000011777 magnesium Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 238000001947 vapour-phase growth Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 239000007774 positive electrode material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
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- 238000005275 alloying Methods 0.000 description 1
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- DHIGSAXSUWQAEI-UHFFFAOYSA-N hydrazine azide Chemical compound NNN=[N+]=[N-] DHIGSAXSUWQAEI-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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Abstract
【解決手段】 p型不純物を有しp型の伝導性を示す窒化ガリウム系半導体層(p型層)を備えてなる窒化ガリウム系半導体素子において、p型層は表層部とそれより内部の深底部からなり、深底部は、p型不純物との伝導性を失わない範囲で水素とを共存させた領域となっている、ことを特徴とするp型層を含む窒化ガリウム系半導体素子。
上記深底部におけるp型不純物に対する水素の原子濃度の比率は略1:1が好ましく、また深底部の厚さはp型層の厚さの40〜99.9%が好ましい。更にp型層の表層部における水素の含有量を深底部の含有量未満、好ましくは2/3以下とする。
【選択図】 図1
Description
(1) p型不純物を含有しp型の伝導性を示す窒化ガリウム系化合物半導体層(p型層)を備えてなる窒化ガリウム系半導体素子に於いて、p型層は表層部とそれより内部の深底部からなり、該深底部はp型不純物と水素とを共存させた領域となっている、ことを特徴とするp型層を含む窒化ガリウム系半導体素子。
(2) 上記p型不純物は、添加(ドーピング)、或いはイオン注入により含有されていることを特徴とする、上記(1)に記載の窒化ガリウム系半導体素子。
(3) p型層内の深底部におけるp型不純物に対する水素の原子濃度の比率が略1:1であることを特徴とする、上記(1)乃至(2)に記載の窒化ガリウム系半導体素子。
(5) p型層内の深底部の膜厚を、p型層の全厚に対し、70%以上とした、ことを特徴とする上記(4)に記載の窒化ガリウム系半導体素子。
(6) p型層の表層部における水素の含有量を、深底部の含有量未満としたことを特徴とする上記(1)乃至(5)の何れかに記載の窒化ガリウム系半導体素子。
(8) p型層の表層部における水素の含有量を、深底部の含有量に対し、1/2以下としたことを特徴とする上記(1)乃至(7)の何れかに記載の窒化ガリウム系半導体素子。
(9) p型層の表層部における水素の含有量を、深底部の含有量に対し、1/3以下とした、ことを特徴とする上記(1)乃至(8)の何れかに記載の窒化ガリウム系半導体素子。
p型層を、それとは格子整合しない結晶基板上に積層をするに際しては、シーディングプロセス(Seeding Process:SP)法(特開2003−243302号公報)と呼ばれる格子不整合結晶エピタキシャル成長技術を好都合に利用できる。
p型層の深底部を含む全体の膜厚(全厚)は、一般的には0.5μm以下であり、望ましくは0.2μm以下、更に望ましくは0.1μm以下である。膜厚の下限は1nm程度が好ましい。p型層の全厚は、気相成長時に於ける、成長反応系への第III族構成元素の原料の供給時間を調節すれば、制御できる。p型層の全厚は、例えば、光学顕微鏡、走査型電子顕微鏡(SEM)、透過型電子顕微鏡(TEM)等の観察より知れる。
本発明では、p型不純物を添加してp型不純物を含む層を形成したる後、不活性ガスを主体として構成した雰囲気内に於いて、制御された速度で同層を冷却して、特定量の水素を残存させて領域を形成することができる。冷却を開始する温度が、p型不純物を含む層の形成温度である場合、冷却速度が大きい程、水素を敢えて残存させた領域の厚みは減少する。また、冷却速度が同一である場合、冷却を開始する温度が高温である程、水素を残存させた領域の厚みは減少する。
しかしこれまで、これらの材料の導電型はn型であり、p型のGaNとは接触させてもオーミック接触を形成できなかった。本発明の技術を用いることにより、これらの導電性の透明材料とオーミック接触を実現することができる。
素子の形態としては、透明正極を用いて半導体側から発光を取り出す、いわゆるフェイスアップ(FU)型としても良いし、反射型の正極を用いて基板側から発光を取り出す、いわゆるフリップチップ(FC)型としても良い。
本実施例では、水素を故意に残留させた領域を含むp型GaN系半導体層を用いてGaN系半導体LEDを構成する場合を例にして本発明の内容を具体的に説明する。
(1)MgドープのAl0,07Ga0.93Nクラッド層106の成長が終了した後、成長反応炉内の圧力を2×104パスカル(Pa)とした。
(2)トリメチルガリウムとアンモニアを原料とし、ビスシクロペンタマグネシウム(bis−Cp2Mg)をMgのドーピング源として、1050℃でMgドープGaN層の気相成長を開始した。
(3)トリメチルガリウムとアンモニアとMgのドーピング源を、成長反応炉内へ4分間に亘り継続して供給して、層厚を0.1μmとするMgドープGaN層を成長させた。
(4)トリメチルガリウムとbis−Cp2Mgの成長反応炉内への供給を停止し、MgドープGaN層の成長を停止した。
上記の実施例1とは、成長後の処理法を変えて、Mgドープp型GaNコンタクト層を形成した。本比較例では、実施例1に記載の積層構造体を、実施例1に記載と同一の手順、条件で形成した後、気相成長時に使用したキャリアガスの水素をそのまま流通し続け、350度℃迄、降温した。室温迄、冷却した後、気相成長に用いたとは別の熱処理炉を用いて、窒素雰囲気中で、900℃で1分間、保持し、従来と同様のp型不純物を電気的に活性化するための熱処理を施した。
実施例2では、実施例1に記載したのと同一の積層構造体について、実施例1とは、異なる手法で冷却を施して、LEDを構成する場合を例にして、本発明の内容を説明する。
11 積層構造体
101 結晶基板
102 アンドープGaN層
103 n型GaN層
104 n型AlGaNクラッド層
105 多重量子井戸構造発光層
106 p型AlGaNクラッド層
107 p型GaNコンタクト層
107−1 p型GaNコンタクト層の深底部
107−2 p型GaNコンタクト層の表層部
108 n型オーミック電極
109 p型オーミック電極
Claims (9)
- p型不純物を含有しp型の伝導性を示す窒化ガリウム系化合物半導体層(p型層)を備えてなる窒化ガリウム系半導体素子に於いて、p型層は表層部とそれより内部の深底部からなり、該深底部はp型不純物と水素とを共存させた領域となっている、ことを特徴とする窒化ガリウム系半導体素子。
- 上記p型不純物は、添加(ドーピング)或いはイオン注入により含有されていることを特徴とする、請求項1に記載の窒化ガリウム系半導体素子。
- p型層内の深底部におけるp型不純物に対する水素の原子濃度の比率が略1:1であることを特徴とする、請求項1乃至2に記載の窒化ガリウム系半導体素子。
- p型層内の深底部の膜厚を、p型層の厚さ(全厚)に対して、40%以上で99.9%以下とした、ことを特徴とする請求項1または3に記載の窒化ガリウム系半導体素子。
- p型層内の深底部の膜厚を、p型層の全厚に対し、70%以上とした、ことを特徴とする請求項4に記載の窒化ガリウム系半導体素子。
- p型層の表層部における水素の含有量を、深底部の含有量未満としたことを特徴とする請求項1及至5の何れか1項に記載の窒化ガリウム系半導体素子。
- p型層の表層部における水素の含有量を、深底部の含有量に対し、2/3以下としたことを特徴とする請求項1及至6の何れか1項に記載の窒化ガリウム系半導体素子。
- p型層の表層部における水素の含有量を、深底部の含有量に対し、1/2以下としたことを特徴とする請求項1及至7の何れか1項に記載の窒化ガリウム系半導体素子。
- p型層の表層部における水素の含有量を、深底部の含有量に対し、1/3以下とした、ことを特徴とする請求項1乃至8の何れか1項に記載の窒化ガリウム系半導体素子。
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JP2007173745A (ja) * | 2005-12-26 | 2007-07-05 | Showa Denko Kk | III族窒化物p型半導体の製造方法 |
WO2012056770A1 (ja) * | 2010-10-27 | 2012-05-03 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
US10868124B2 (en) | 2017-12-12 | 2020-12-15 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Group III nitride semiconductor substrate |
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JP4841206B2 (ja) * | 2005-09-06 | 2011-12-21 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US20120088566A1 (en) | 2010-04-27 | 2012-04-12 | Aristocrat Technologies Australia Pty Limited | Method of gaming, a gaming system and a game controller |
JP5872327B2 (ja) * | 2011-03-10 | 2016-03-01 | 株式会社東芝 | 半導体整流素子 |
JP6144630B2 (ja) * | 2012-08-30 | 2017-06-07 | 日本碍子株式会社 | 複合基板の製造方法、13族元素窒化物からなる機能層の製造方法 |
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