CA1095154A - Heterostructure semiconductor devices - Google Patents

Heterostructure semiconductor devices

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Publication number
CA1095154A
CA1095154A CA282,747A CA282747A CA1095154A CA 1095154 A CA1095154 A CA 1095154A CA 282747 A CA282747 A CA 282747A CA 1095154 A CA1095154 A CA 1095154A
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region
semiconductor material
self
type
regions
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French (fr)
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James A. Van Vechten
Jerry M. Woodall
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

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  • Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

ABSTRACT OF THE DISCLOSURE
Self-completing semiconductor materials may be converted to p-conductivity by charged particle irradiation which rearranges the atoms in the crystal lattice and may then be used in a heterostructure semiconductor device to permit the including in the device of materials with a wide range of new properties.

Description

1 BACKGRC~D OF THE :[NVENIION
_ . _
2 The heterostructure semiconductor device is one in which
3 regions of different semiconductor materials are present in the same
4 devioe body. Usually the regions of the different semiconductor materials are of opposlte conductivity type and form a p-n junction at their inter-6 faoe . There are a variety of useful advantages that are obtained from 7 such a structure. me advantages result from added flexibility in proper-8 ties of materials, dimensional precision and processing. As an example 9 of the devioe s that have appeared in the art, the injection laser using a double heterostructure illustrates the interrelated materials, structure 11 and processing advanta~es that are gained. In the double heterostructure 12 injection laser the central region of one semiconductor material and the 13 ~o regians of the other semiconductor material produ oe an electric field 14 at each interfaoe which serves to confine injected carriers to the desired region. At the same time the added flexibility of the different materials 16 permits selec-ting materials having an index of refraction at the inter-17 faoes such as to confine the light to the cavity region. The art has 18 been directed in its development toward many types of devioes using hetero-19 structure but cne serious liri ation ~hic has her tofore existe1 has b en .
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1 the fact that a large elass of comFound type semiconduc-tor materials 2 that have very useful properties has exhibited a phenom~lon kncwn as 3 self-compensation and as a result the conductivity is always one type, 4 usually N.

REFERENCE TO REL~TlED APPLICATION
6 In our copending application Serial No~ 282,753 filed 7 August 10, 1976 the ability to impart -p- conductivity to self-8 compensated compound semiconductor materials is set forth. This 9 ability now opens up to device use an entire class of compound semi-conductor materials with a wide range of physical properties.

11 Slll~ OF 'l'~; INV~TION
12 Heterostructure semiconductor devices are fabrieated by forming 13 a region of a self-compensated cQmpound semieonductor material on a body 14 of semiconductor material and then depending on the device re~uirements imparting -p- conductivity as needed. In accordanee with the invention, 16 heterostructures of two and m~re contiguous regions for various device 17 structures may be fabrieated.
18 The principal objeet of the invention is to set forth hetero 19 struetures, one region of which, is made of self-compensated compound semiconductor material, all useful in fabricating semiconductor deviees.
' 21 DESC~IPlION OF THE DR~WING
22 FIG. 1 is a view of a heterostructure body with two regions 23 one of which is a self-compensated compound semiconductor.
24 FIG. 2 is a view of a self-eompensa-ted eompound semiconductor double heterostruet:ure body.

" ~ '.

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1 FIG. 3 is a sketch of a self-compensated double heterostructure 2 injection laser.

3 DETAIT.~i~) DESCRIPTION
4 The phenomenon of self-com~x~lsation in compound semiconductor materials results in the conductivity being always one type, usually N, 6 so that materials exhibiting this phencmenon heretofore were very res 7 tricted in their device usefulness. While the phenomenon and hcw to 8 overcome it are set forth in detail in our referenced copending application 9 Serial No. 282,753 filed August 10, 1~76 the following is a generalized description.
11 The phenomenon occurs where one el~ment of the material generates 12 enough lattice defects, commonly vacancies to compensate any concentration 13 of impurities of the desired conductivitytype. In practice the phenomenon 14 has been observed to prevent p-type conductivity in large bandgap semi-conductors where anion vacancies are more numerous than cation vacancies 16 If the fermi level in this t~pe of material is located near the valen oe 17 band with a significant energy separation from a higher level which is the 18 donor ionization energy level, then the total energy of the material could 19 be lowered by generating an anion vacancy ionizing same to its donor state and allowing the resulting electron to drop to the fermi level. This 21 process would all~w the fermi level to rise away from the valence band 22 quenching p-type conductivity. mis invention provides structures employing23 "p,type" conductivity in these materials.
24 Referring to FIG. 1 a heterostructure body is shcwn having a region 2 of a conventional semiconductor material and a region 3 of a 26 self-compensated semiconductor material forming a p-n junction 4 wi-th the 27 region 2. Electrodes 5 and 6 are applied to regions 2 and 3, respectively,28 for device appli~ations standard in the art.

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1 The ability to provide both n-type and p-type conductivity to 2 the self-compensa~ing compound semiconductor material region 3 permits 3 a wider relaxatio~l of conductivity type and resistivity of the region 2.
4 As an example of a he erostructure of the invention the region 2 could be made of gallium nitride (GaN) and the region 3 could be made 6 of aluminum nitride (AlN). The conversion to p-type conductivity -ls 7 accomplished by irradiation with charged particles. These particles may 8 be electrons, protons or ions. This may be contrasted with normal ion 9 implantation used to convert conductivity-type wherein tha concentration of implanted impurities overwhelms the concentration of existing impurities;
11 This is accompanied by a large amount of crystal damage which must be 12 anealed out to reveal the effect of the doping level. The lon implantation 13 technique produces wide junctions.
14 In other words the invention rearranges the crystal atoms to produce conductivity whereas ion implantation relies on implanted atoms for 16 control conductivity. The resulting structure has a bandgap in the reg$on 17 2 of approximately 3.39eV and a bandgap in region 3 of approximately 6.2eV.1~ The device may be fabricated`by first providing the regicn 2 of 19 gallium nitride using the technique set forth by H. Maruska and J. Tietjen 20~ in Applied Physics Letters, Vol. 15, No. 10, November 15, 1969 and para-21 phrased as follows: .
22 A straight tube is pro~ided through which the pertinent gaseous 23 speeies flow to provids chloride transport of metallic gallium, and subse-24 quent reaction of these transport products with ammonia to for~ GaN on a substrate surface of single crystal sapphire (A1~03). Since the region 3 26 will be (AlN) a 111 crystallographic orientation is preferably used. The 27 sapphire substrates are mechanically polished to a flat mirror-smooth finish, 28 and then heat-treated in hydrogen at 1200C, prior to their introduction to .:
- . . .

' ' , , ' ' , ' ~0~95iri4L

1 the growth apparatus. Typi~al substrate dim2nsions are about 2 cm in 2 ~ea and about 0.25 mm thick. In the growth procedure, freshly heat-3 treated substrates are inserted into the ~eposition zone of the growth 4 chamber and heated in hydrogen at a rate of ~bout 20C/min. When the final growth temperature is reached, the Nll3 flow is started and, after 6 a 15-min. period to allow the NH3 concentration to reach a steady-state 7 value, the HCl flow is started to provide transport of the Ga and deposition 8 of GaN.
g The flo~ rates of pure HCl and NH3 are about 5 and 400 cm /min, respectively, and an additional 2.5 liters/min of hydrogen i5 used as a 11 carrier gas.
12 The conductivity of region 2 is n-type. Further, GaN other than 13 n-type is not readily produced.
14 The region 3 of self-compensated semiconductor material is next applied. In the example of aluminum nitride (AlN) the region 3 is formed 16 on the above-described region 2 by the techni~ue set forth by R. F. Rutz in 17 Applied Physics Letters, Vol. 28, No. ~, April 1976. The technique is para-18 phrased as follows: -l9 A l-~m-thick layer of AlN is grown on region 2 by rf reactive sputtering at 1000 C. This layer, serves as a nucleating seed for a 21 ~rowth procedure carried out by placing the AlN-coated GaN region 2, 22 AlN face down on a polycrystalline sintered AlN source wafer, in a 23 tungsten crucible heated to _ 1850 C in a 15% H~, 85% N2 forming gas 24 atmosphere. A vertical temperature gradient promotes the transfer of the AlN from the sintered source to the substrate forming epitaxial 26 single-crystal layers.
27 The AlN region 3 is n-type conductivity because of the self-28 compensating phenomenon that is the nature of the AlN material. The region 29 3 is row conv~rted co p-type conducti ity by bo~bardment with protons (d ~

.
.

: - ' - ' ' ~5~
1 or, deoending on the de~ired resistivity, by the c~mbination of the 2 introduction of an acceptor impurity such as beryllium (~e) and 3 ioni~ed beryllium (Be ) bombardment as set forth in the referenced co-4 pending application. The depth of conversion establishes the location of the p-n junction. The resulting heterostruc~ure is useful as an 6 asymet~ic conductlng device or electrical to light conversion and detection 7 device when electrical signals are applied to terminal 5 and 6 or light detection device when light is absorbed by region 1.
9 Referring next to FIG. 2 a view is provided of a double hetero-structure body 10 wherein regions 11 and 12 are ~lade of a ~elf-compensated 11 compound semiconductor material and form p-n junctions 13 and 14, respect-12 ively, with a region 15 of a semiconductor material of opposite conductivity 13 type. The electrodes 16 and 17 are provided for device use. The conductivity 14 assignments of n and p are made merely to facilitate explanation and arenot governed by material requirements because in accordance'with the in-16 vention both n and p self-compensated compound semiconductor regions can17 be fabricated in heterostructures.
18 The st~ucture of FIG. 2 may be used as a high temperature trans-19 istor, an optical modulator, à light emitting device or an injection laser by application of signals to and via the electrodes 16 and 17.
21 l'he heterostructure of FIG. 2 using AlN or regions 11 and 1222 and GaN for region 15, may be fabricated by growing as set forth by Rutz23 cited above, the region 11 of AlN on a 111 crystallographic orientation 24 substrate of Tungsten (W) or aluminum oxide (Al203) a lm thick layer by reactive rf sputtering at lOOO~C. Th'is layer serves as a nucleating seed for 26 a growth procedure carried out by placing the AlN coated substrate face down 27 on a polycrystalline sintered AlN source wafer in a tungsten crucible heated ~8 to - lS50 ~ C in a 15~ H2, 85% N2 forming gas atmosphere. A vertical tempera-, -.

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1 tude c~radient pro~otes transfer of the AlN from the sintered source to the 2 substrate in an epitaxial la~er.
3 The region 15 oE gallium nitride (GaN) is then for~ed on the 4 region 11 as set forth by Maruska et al cited above. Chloride transport is used for metallic gallium with subsequent reaction of the transport products 6 with ammonia to deposit (GaN) on the region 11 serving as the substrateO The 7 GaN material formed is n-type. The flow rates of pure HCl and NH3 are c~bout 8 5 and 400 cm /min, respectively, and an additional 2.5 liters/min of hydrogen 9 is used as a carrier gas. With these flow rates, a substrate temperature of825C, a C-a-zone ternperature of 900c, and a center zone (-that region 11 between the Ga and deposi-tion zones) iemperature of 925C, gro~th rates 12 of about 0.5 ~/min are obtained under steady-state conditions. Typical 13 thicknesses for the deposit for region 15 are in the range of 50-150 ~.
14 Doping is accomplished, during the grc~th process, by introducing the dopant to the grc~th apparatus, either as its hydride or by direct evaporation of 16 the element into a hydrogen-carrier gas.
17 The region 12 is next grc~n using the technique set forth above 18 for region 11.
19 Since both regions 11 and 12 are normally n-type it is ne~t ne oe ssary to remove the body 10 from the substrate and convert to p~type.
21 This is done by either charge particle irradiation or by a combination of 22 acceptor implantation and bombardment as set forth in the referenced co-23 pending application.
24 A double heterostructure is next shc~n fabricated into an in-jection laser device. In this type of device electrical energy is converted 26 to light energy in a region that is designed to simultanecusly keep carrier27 density high and photons confined. In accordance with the inventio~ the 28 flexibility of being able to include the class of self-compensating compound . .

.

1 semiconductor materials in both conduc-tivity -types permi-ts inclusion in 2 the structure of many wider bandgap materials and better index of refrac-3 tion matches than heretofore in -the art In this type of device it is 4 desirable that the cavity wherein the carrier popula-tion inversion is to occur be of a bandgap such that light of the desired frequency is produced 6 and that the bandgap is lawer than the outside regions. For efEiciency, 7 it is desirable that the cavity be small enough for high carrier concentra-8 tion at lc~ current and that the cavity have a higher index of refraction 9 than the outside regions. In accordance with the inven-tion this double heterostructure injection laser need have only one p-n junction.
11 Referring to the injection laser of EIG. 3 -the device consists 12 of a body 20 mounted on a conducting substrate 21. me body 20 is made 13 up of a region 22 of one conductivity type, for example n, of a for example, 14 self-compensated compound semiconductor material. me bcdy 20 also eontains a region 23 of a semiconductor selected for its bandgap, and index of 16 refraetion. Since the conductivity type of this region 23 may be the same 17 as 22, for example n, substantial material selection flexibility has been 18 provided. me body 20 has an outer layer 24 of self-cGmpensated semieon-l9 duetor material of p eonduetivity type forming a p-n junetion 25 with -the region 23. Eleetrodes 26 and 27 are applied to regions 21 and 24, respeet-21 ively, for electrieal signal purposes. A fabry-Perot interferometer is 22 formed by making faees 28 and 29 parallel.
23 Sinee it is desirable that the bandgap be higher in the regions 24 22 and 24 than in the region 23 and that the index of refraction be lower in the regions 22 and 24 than in the region 23, the self-ec~pensated 26 eompound semiconduetor material aluminum nitride (AlN) may be employed, for 27 example in regions 22 and 24, together wi-th for example, the semiconduetor 28 material gallium n:itride (GaN) or gallium 1 4 aluminumxnitride (Gal XAlXN).

s~

The device should preferably have dimensions of regions 22 and 2 24 in the range of 0.1-5 microns. The thickness of the region 23, the 3 cavity should be in the range of 500 to 5000A. The substrate contact 21 4 should be aluminum (Al) and t~.e contact: 27 should have a large wo~k ~unction and be beryllium (Be) or gold (Au). The Fabry-Perot faces Z8 and 29 may be 6 rendered parallel by the s~andard techniques of cleaving or polishing.
7 The region 22 is formed according to the technique set forth 8 by R. F. Rutz cited above and paraphrased as follows:
9 First epitaxially deposit a 1~ thick layer of alu~inum nitride(AlN) on 111 crystallographic orientation single crystal tungsten (W~ or 11 sapphire (A1203) by rf reactivs sputtering at 1000C. This layer serves as 12 a nucleating seed for further growth where the AlN is placed face down in 13 contact with an AlN sintered source wafer in a tungsten crucible heated to 14 _ 1850C in a 15~ H2, 85% N2 forming gas atmosphere. A vertical temperature gradient promotes the trans~er of the AlN and is continued until the range 16 of 1 to 5 microns is achieved. This AlN will be n-type because of vacancy 17 self-compensating on the region 22 as a substrate.
18 The region 23 is formed using~ the material gallium nitride (GaN) 19 as an example, using the technique set forth by Maruska et al cited above and paraphrased as follows:
21 Chloride transport of metallic gallium is reacted at ~he deposi-22 tion site with ammonia (NH3) to form gallium nitride ~GaN) on the region 22 23 substrate. The flow rates of HCl and NH3 are 5 and 400 cc/min, respectively 24 and an additional 2.5 liters/min i~ hydrogen is used as a carrier gas.
~he gallium zone ~emperature is 900C, the region 22, temperature is 825C
26 and the region bet~een the gallium source and the subst~ate is g25C. These 27 conditions produce growth rates of about 0.5 ~Imin and is continued until 28 500-5000A are grown The conductlvity type of the GaN material produced 29 is N. f' '' ' .
~ , The region 24 is next formed using the technique for region 22 2 using the body now made up of regions 22 and 23 as the substrate, Some 3 berylliurn (Be) as a future p-type impurity source may be included in thls 4 step. The region 24 is grown between 0.1 and S microns thick. The region 24 is then converted to p-type conductivity type. A beryllium (Be) coating 6 i~ placed on ~egion 24 and a berylli~lm ion source in standard ion implanta-7 tion techniques is employed to introduce beryllium. The be~yllium (Be ) 8 bombardment takes place at 140 kilowatts. The beryllium (Be) coating can 9 then serve as part of electrode 27. The substrate of aluminum oxide (A1203)or tungsten ~W) is replaced by an electrode 26 of aluminurn. It should be 11 noted ~hat the fabrication is arranged so that high temperature processing12 steps are minimi7ed after the p-type conversion.
13 It should be understood that the above-described arrangements 14 are illustrative of many possible speci~ic embodiments tha~ will be clear to one skilled in the art in the light of the invention.

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Claims (16)

THE EMBODIMENTS OF THE INVENTION IN WHICH AN EXCLUSIVE PROPERTY
OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1.- A semiconductor heterostructure comprising a first region of a first semiconductor material epitaxially contiguous with a second region of a second semiconductor material, said second semiconductor material being of the self-compensating type having both cation vacancies and an excess of anion vacancies, and having at least a portion thereof converted to p-type conductivity by charged particle irradia-tion producing atomic rearrangement.
2.- The heterostructure of claim 1 wherein said first semiconductor material is gallium nitride and said second semi-conductor material is aluminum nitride.
3.- A semiconductor heterostructure comprising first and second regions of a self-compensating compound semiconductor material having both cation vacancies and an excess of anion vacancies, wherein one of said regions is converted to p-type conductivity by charged particle irradiation to produce atomic rearrangement.
4.- The heterostructure of claim 3 wherein the self-compensating compound semiconductor material is aluminum nitride.
5.- A semiconductor heterostructure comprising a first region of n-type conductivity self-compensated semi-conductor material, a second region of n-type conductivity different semiconductor material contiguous with said first region and a third region of self-compensated semiconductor material having both cation vacancies and an excess of anion vacancies converted to p-type conductivity by charged particle irradiation producing atomic rearrangement.
6.- The heterostructure of claim 5 wherein said first and third regions are of aluminum nitride (A1N) and said second region is of gallium nitride (GaN).
7.- In a semiconductor injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions that have a change in index of refraction, the improvement wherein said cavity is of a semiconductor material different from that of said outside regions and wherein at least one of said out-side regions is of self-compensating semiconductor material having both cation vacancies and an excess of anion vacancies converted to p-type conductivity by charged particle irradia-tion to produce atomic rearrangement.
8.- In a semiconductor injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions that have a change of index of refraction, the improvement wherein said cavity is of a different semiconductor material of the same conductivity type as one of said outside regions and wherein another of said outside regions if of self-compensating compound semiconductor material having both cation vacancies and an excess of anion vacancies converted to p-type conduct-ivity by charged particle irradiation producing atomic rearran-gement.
9.- The injection laser of claims 7 or 8 wherein said outside regions are of aluminum nitride (AlN) and said cavity is of gallium nitride (GaN).
10.- The injection laser of claims 7 or 8 wherein said cavity is of gallium aluminum nitride (Ga1-xA1xN).
11.- A process for fabricating a semiconductor heterostructure comprising the steps of forming on a first semiconductor material a region of a second semiconductor material of the self-compensating type having both cation vacancies and an excess of anion vacancies, and converting said second semiconductor material to p-type conductivity by bombarding with charged particles to produce atomic rearran-gement.
12.- The process of claim 11 wherein said second semiconductor material is aluminum nitride.
13.- A process for fabricating a semiconductor in-jection laser wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions, comprising the steps of preparing a double hetero-structure, including:

(a) forming a first outside region of a semiconductor material of the self-compensating type having both cation vacancies and an excess of anion vacancies, (b) forming thereon a small cavity region of a semi-conductor material having lower band gap and higher index of refraction than said outside region, and (c) forming on said cavity region a second outside region of a self-compensating semiconductor material, and converting at least one of said outside regions to p-type conductivity by bombardment with charged particles to produce atomic rearrangement.
14.- The process of claim 13 wherein said step of preparing includes the step of introducing an acceptor impurity into at least one outside region.
15.- The process of claim 13 wherein said step of preparing includes the step of introducing an acceptor impurity into at least one outside region by ion implantation through a coating of an acceptor impurity.
16.- The process of claims 14 and 15 wherein the acceptor impurity is beryllium, the self-compensating semi-conductor material is aluminum nitride and the charged particles are beryllium ions.
CA282,747A 1976-08-10 1977-07-14 Heterostructure semiconductor devices Expired CA1095154A (en)

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JPS55145773A (en) * 1979-04-28 1980-11-13 Canon Inc Recording liquid
JPS55145774A (en) * 1979-05-02 1980-11-13 Seiko Epson Corp Ink jet recording ink
US4380018A (en) * 1980-06-20 1983-04-12 Sanyo Denki Kabushiki Kaisha Ink droplet projecting device and an ink jet printer
JPS6040474B2 (en) * 1980-12-01 1985-09-11 キヤノン株式会社 recording liquid
JPS59228776A (en) * 1983-06-10 1984-12-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor hetero-junction element
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